Similarly to laser-induced backside wet etching (LIBWE) with nanosecond ultraviolet (ns UV) laser pulses, the irradiation of the solid/liquid interface of fused silica with sub-picosecond (sub-ps) UV and femtosecond near infrared (fs NIR) laser pulses results in etching of the fused silica surface and deposition of decomposition products from liquid. Furthermore, the etch threshold is reduced compared with both direct ablation with an fs laser in air and backside etching with UV ns pulses. Using 0.5 M pyrene/toluene as absorbing liquid, the thresholds were determined to be 70 mJ cm−2 (sub-ps UV) and 330 mJ cm−2 (fs NIR). Furthermore, an almost linear increase in the etch rate with increasing laser fluence was found. The roughness of surfaces backside etched with ultra-short pulses is higher in comparison with ns pulses but lower than that obtained using direct fs laser ablation. Hence a combination of processes involved in fs laser ablation and ns backside etching can be expected. The processes at the ultra-short pulse laser irradiated solid/liquid interface are discussed, considering the effects of ultra-fast heating, multi-photon absorption processes, as well as defect generation in the materials.
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