AbstractFeaturing exceptional photoelectronic properties and scalability, hot‐pressing processed all‐inorganic (i. e., CsPbBr3) perovskite wafers have emerged as promising candidates for direct X‐ray imaging. Nonetheless, severe ion migration in CsPbBr3 wafers results in a large and drifting dark current, thereby compromising the bias‐resistant stability of the X‐ray detector. Herein, a solvent‐free interfacial defect passivation strategy is proposed by introducing a passivator molecule, 2‐bromonaphthalene, to passivate interfacial defects and suppress ion migration in CsPbBr3 wafers. Implementing this strategy effectively inhibits ion migration in CsPbBr3 wafers, as evidenced by an enhanced ion migration activation energy of 0.56 eV and a negligible dark‐current drift of 4.01 × 10−8 µA cm−1 s−1 V−1, representing a 100 fold reduction in dark current drift compared to untreated CsPbBr3 wafers under a high electric field of 100 V mm−1, indicating a high bias‐resistant stability. Consequently, the CsPbBr3 wafer X‐ray detector achieves an impressively high sensitivity of 11090 µC Gyair−1 cm−2, a low detection limit of 9.41 nGyair s−1 under a 100 V mm−1 electric field, and high‐contrast X‐ray imaging capabilities, with performance comparable to that of CsPbBr3 single‐crystal‐based X‐ray detector, highlighting the potential of interfacial defect passivation strategy for high‐performance X‐ray detectors.
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