Investigation Of Vanadium Research Articles

Vanadium and tantalum doping of tin dioxide: a theoretical study.

The increasing demand of efficient optoelectronic devices such as photovoltaics has created a great research interest in methods to manipulate the electronic and optical properties of all the layers of the device. Tin dioxide (SnO2), due to his charge transport capability, high stability and easy fabrication is the main electron transport layer in modern photovoltaics which have achieved a record efficiency. While the wide band gap of SnO2 makes it an effective electron transport layer, its potential for other energy applications such as photocatalysis is limited. To further improve is conductivity and reduce its bandgap, doping or co-doping with various elements has been proposed. In the present density functional theory (DFT) study, we focus on the investigation of vanadium (V) and tantalum (Ta) doped SnO2 both in the bulk and the surface. Here we focus on interstitial and substitutional doping aiming to leverage these modifications to enhance the density of states for energy application. These changes also have the potential to influence the optical properties of the material, such as absorption, and make SnO2 more versatile for photovoltaic and photocatalytic applications. The calculations show the formation of gap states near the band edges which are beneficial for the electron transition and in the case of Ta doping the lowest bandgap value is achieved. Interestingly, in the case of Ta interstitial, deep trap states are formed which depending of the application could be advantageous. Regarding the optical properties, we found that V doping significantly increases the refractive index of SnO2 while the absorption is generally improved in all the cases. Lastly, we investigate the electronic properties of the (110) surface of SnO2, and we discuss possible other applications due to surface doping. The present work highlights the importance of V and Ta doping for energy applications and sensor applications.

Investigation of vanadium(III) and vanadium(IV) compounds supported by the linear diaminebis(phenolate) ligands: correlation between structures and magnetic properties.

A family of oxidovanadium(iv) compounds containing linear diaminebis(phenolate (salans) L1-5 ligands (L1 = [MeNCH2CH2NMe(CH2-4-CMe2CH2CMe3-C6H3O)2]2-; L2 = [MeNCH2CH2NMe(CH2-4-CH3-C6H3O)2]2-; L3 = [MeNCH2CH2NMe(CH2-4-Cl-C6H3O)2]2-; L4 = {MeNCH2CH2NMe[CH2-4,6-(CH3)2-C6H2O]2}2-; and L5 = {MeNCH2CH2NMe[CH2-4,6-(Br)2-C6H2O]2}2-) and non-oxidovanadium(iii) with L2,4 and acac ligands has been prepared and characterized by chemical and physical techniques. Reactions of [VO(acac)2] with ligand precursors H2L2,4 in toluene or hexane afforded vanadium(iii) compounds [V(L-κ4ONNO)(acac)] (1, L2; 2, L4), while the use of acetonitrile or ethanol led to the formation of dimeric oxidovanadium(iv) [(VO)2(μ-L-κ4ONNO)2] (3, L1; 4, L2; 5, L3) and monomeric [VO(L-κ4ONNO)] (6, L4, 7, L5) compounds. As shown by X-ray crystallography, compounds 1 and 2 are monomeric, in which the chelating ligands afford octahedral cis-α geometry at the vanadium center. In the dimeric structures of 3-5, the six-coordinate vanadium centers are bridged via two oxygen atoms of the L1-3 ligands while the L4,5 ligands generate square pyramidal structures of the monomeric 6 and 7 compounds. HFEPR studies allowed the determination of the spin Hamiltonian parameters of the S = 1 spin state of the monomeric V(iii) and dimeric V(iv), and S = ½ in monomeric V(iv) compounds. Magnetic measurements of 3-5 indicated weak ferromagnetic metal-metal exchange interactions. A reaction course for the deoxygenation and reduction of vanadyl-salan compounds is proposed.

Investigation of vanadium and nitride alloys thin layers deposited by PVD

In this work we present the technique of magnetron vapor deposition and the effect of several deposition parameters on the structural and morphological properties of prepared thin films. It was noted that the deposition time has an effect on the crystallinity, mechanical properties such as residual stress, roughness surface and the layer composition from target products. Studies were carried out on layers of vanadium (V) and the nitride vanadium (VN).

The effect of oxygen on the dislocation structures in Vanadium

A predominance of straight screw dislocations is observed in b.c.c. metals deformed at large effective stresses, i.e. low temperatures. This observation has been used as evidence that the double kink mechanism is the rate controlling mechanism of dislocation motion. If interstitial atoms were the short range barriers to dislocation motion, then a significant density of edge dislocation should be observed in samples deformed at large effective stresses. An investigation of vanadium containing various levels of oxygen (15–1000 wt.-p.p.m.) was undertaken. The samples were deformed at small and large effective stresses in both tension and compression. One of the most significant observations was the predominance of screw dislocations in samples deformed at large effective stresses, independent of oxygen concentration. Therefore, the interstitial oxygen atoms cannot act directly as short range barriers to dislocation motion.

Spectrophotometric Investigation of Vanadium(II), Vanadium(III), and Vanadium(IV) in Various Media.

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTSpectrophotometric Investigation of Vanadium(II), Vanadium(III), and Vanadium(IV) in Various Media.E. L. Martin and K. E. BentleyCite this: Anal. Chem. 1962, 34, 3, 354–358Publication Date (Print):March 1, 1962Publication History Published online1 May 2002Published inissue 1 March 1962https://doi.org/10.1021/ac60183a016RIGHTS & PERMISSIONSArticle Views488Altmetric-Citations15LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InReddit PDF (667 KB) Get e-Alerts Get e-Alerts