Inverse Saturable Absorption Research Articles

Inverse Saturable Absorption Mechanism in Mode-Locked Fiber Lasers with a Nonlinear Amplifying Loop Mirror

From the perspective of the differential phase delay experienced by the two counterpropagating optical fields, the self-starting of the mode-locked fiber laser with a non-linear amplifying loop mirror (NALM) is theoretically studied. Although it is generally believed that NALM shows a saturable absorption effect on both continuous wave (CW) light and pulses, we find a counter-intuitive fact that cross-phase modulation (XPM) leads to opposite signs of differential non-linear phase shifts (NPSs) in these two cases, resulting in inverse saturable absorption (ISA) during the pulse formation process. The ISA is not helpful for the self-starting of laser mode-locking and can be alleviated by introducing a non-reciprocal phase shifter into the fiber loop. These results are helpful for optimizing the design of NALM and lowering the self-starting threshold of the high-repetition-rate mode-locked fiber laser.

Improved SESAMs for femtosecond pulse generation approaching the kW average power regime.

We present semiconductor saturable absorber mirrors (SESAMs) that can potentially support femtosecond pulses from ultrafast thin disk lasers (TDLs) with high average power approaching the kW-power level and high pulse energy in the range of 100 µJ to 1 mJ at megahertz pulse repetition rates. For high-power operation, the SESAM parameters will ultimately limit the shortest pulse duration from a soliton mode-locked laser before mode locking instabilities such as multiple pulsing instabilities and continuous wave (cw) breakthrough start to occur. Currently shorter pulses are prevented due to the inverse saturable absorption that becomes stronger with shorter pulses and results in a shift of the "rollover" of the nonlinear SESAM reflectivity towards lower fluences. Here we discuss a novel SESAM design that addresses these issues and can be grown by metal-organic vapor phase epitaxy (MOVPE), an attractive epitaxial growth technology for manufacturing.

SESAMs for High-Power Oscillators: Design Guidelines and Damage Thresholds

We present for the first time to the best of our knowledge a systematic study of lifetime and damage of semiconductor saturable absorber mirrors (SESAMs) designed for operation in high-power oscillators. We characterize and compare nonlinear reflectivity and inverse saturable absorption (ISA) parameters as well as damage threshold and lifetime of different representative SESAMs under test using a nonlinear reflectivity measurement setup at unprecedented high fluence levels. We investigate the catastrophic damage that occurs at very high fluences by demonstrating a dependence of the damage threshold on the ISA parameter F2 and the maximum reflectivity fluence F0. We can clearly demonstrate that the damage fluence Fd scales proportionally to √F2 for all SESAMs. In the case of SESAMs with the same absorber where the product Fsat .ΔR is constant, the damage fluence Fd scales proportionally to F0. Therefore, damage occurs due to heating of the lattice by the energy absorbed due to the ISA process and is not related to the quantum well (QW) absorbers. Furthermore, we present guidelines on how to design samples with high saturation fluences, reduced induced absorption, and high damage thresholds. Using multiple QWs and a suitable di-electric topsection, we achieved SESAMs with saturation fluences >;200 μj/cm2, nonsaturable losses <;0.1%, and reduced ISA. Our best sample could not be damaged at a maximum available fluence of 0.21 J/cm2 and a peak intensity of 370 GW/cm2. These SESAMs will be suitable for future high-power femtosecond oscillators in the kilowatt average output power regime, which is very interesting for attosecond science and industrial material processing applications.

Diode-pumped Nd:BaY 2F 8 picosecond laser

Picosecond pulse generation at 1050 nm by a diode-pumped Nd:BaY 2F 8 (Nd:BaYF) active crystal has been investigated under low-power pumping (440 mW absorbed). The sample was oriented along the optical axes and cut at Brewster angle for y-axis laser polarization to minimize birefringence effects. Stable passive mode-locking operation has been achieved by inverse saturable absorption with 80-mW output power and 3.7-ps pulses.

Passive stabilization of a passively mode-locked Nd:GdVO4 laser by inverse saturable absorption

A diode-pumped Nd:GdVO4 laser mode-locked by a semiconductor saturable absorber and output coupler (SESAOC) is passively stabilized to suppress Q-switched mode-locking. A phase mismatched BIBO second-harmonic generation (SHG) crystal is used for passive stabilization. The continuous wave mode-locking (CWML) threshold is reduced and the pulse width is compressed. The pulse width is 6.5ps as measured at the repetition rate of 128MHz.

Analysis and suppression of Q-switching instabilities in mode-locked lasers-a control systems approach

We investigate the origin of Q-switching instabilities in a mode-locked laser from a control systems viewpoint. The laser is represented as a linear control system, and we consider active laser stabilization either by gain or by loss control as well as passive stabilization via inverse saturable absorption. Gain control stabilization compensates for low-pass filtering in the gain relaxation branch of the system, while control of intracavity losses directly counteracts the destabilizing effect of the saturable absorber. For both stabilization approaches, design rules are derived for controller gain and bandwidth, and their applicability to different laser systems is investigated. Our discussion is concluded with a control systems analysis of passive laser stabilization via inverse saturable absorption. The control systems representation makes the established methods of control theory available to active and passive laser stabilization.

Realization of inverse saturable absorption by intracavity third-harmonic generation for efficient nonlinear mirror mode-locking

A technique of suppressing passive Q-switching by inverse saturable absorption in a cw nonlinear mirror mode-locked laser is presented. The nonlinear mirror saturable absorber consists of a second-harmonic generation crystal and a dichroic mirror while the inverse saturable loss is realized by intracavity third-harmonic generation. The inverse saturation reduces significantly the critical intracavity pulse energy for stable, self-starting, self-sustained, and power scalable cw mode-locking. Two LiB3O5 crystals are employed to realize the technique in a diode array pumped Nd:YVO4 oscillator providing a peak power of 918W, pulse width of 29ps, and repetition rate of 170MHz.

New regime of inverse saturable absorption for self-stabilizing passively mode-locked lasers

The reflectivity of a semiconductor saturable absorber mirror (SESAM) is generally expected to increase with increasing pulse energy. However, for higher pulse energies the reflectivity can decrease again; we call this a ‘roll-over’ of the nonlinear reflectivity curve caused by inverse saturable absorption. We show for several SESAMs that the measured roll-over is consistent with two-photon absorption only for short (femtosecond) pulses, while a stronger (yet unidentified) kind of nonlinear absorption is dominant for longer (picosecond) pulses. These inverse saturable absorption effects have important technological consequences, e.g. for the Q-switching dynamics of passively mode-locked lasers. A simple equation using only measurable SESAM parameters and including inverse saturable absorption is derived for the Q-switched mode-locking threshold. We present various data and discuss the sometimes detrimental effects of this roll-over for femtosecond high repetition rate lasers, as well as the potentially very useful consequences for passively mode-locked multi-GHz lasers. We also discuss strategies to enhance or reduce this induced absorption by using different SESAM designs or semiconductor materials.

Suppression of Q-switched mode locking and break-up into multiple pulses by inverse saturable absorption

Suppression of Q-switching during mode locking is extremely important for the successful development of continuous-wave mode-locked solid-state and fiber lasers. In this paper we show that the use of inverse saturable absorption, such as two-photon absorption and free carrier absorption, can suppress Q-switching instabilities and expand the continuous-wave operating regime in solid-state and fiber lasers. Conversely, an excess of inverse saturable absorption may lead to pulse-energy limiting and induce a break-up into multiple pulses. To analyze the advantages and limitations of adding this nonlinearity, we derive and discuss the mode-locking stability criteria in the presence of inverse saturable absorption. Useful asymptotic formulas for the absorber design employing inverse saturable absorption are also derived.

Raman spectroscopic study of excited states and photo-polymerisation of C60 from solution

The Raman scattering signal of C60 in solution was monitored as a function of the excitation intensity at 514.5 nm. Whereas at low intensities the A2g pentagonal pinch mode was positioned at 1469 cm−1, at intensities where an inverse saturable absorption is observable, it was positioned at 1466 cm−1. This mode positioning is ascribed to the molecular triplet state. When measured at the cuvette interface, the ground-state Raman mode, at 1469 cm−1 in solution was seen to degrade quickly under illumination to a lower Raman frequency of 1458 cm−1 where an insoluble deposit formed, which has been identified as a photochemical product of C60 analogous to the solid-state C60 polymer formed by a 2+2 cyclo-addition across π bonds of neighbouring molecules. The process is seen to be reversible under high-intensity illumination, via an intermediate state with mode positioning at 1463 cm−1. This state is associated with a high-intensity excited state previously reported in the solid state of C60.

Excited-state absorption studies of Cr/sup 4+/ ions in several garnet host crystals

An experimental study of saturable absorption and excited-state absorption (ESA) in several inorganic saturable absorbers, Cr/sup 4+/:YAG, Cr/sup 4+/:GGG, and Cr/sup 4+/:YSGG, is presented. We provide the theoretical background of absorption characteristics in saturable absorbers that exhibit ESA, with some new results: approximate analytical solutions are proposed for the optical transmission in the case of a slow absorber, and for various light intensity conditions of spatially or temporally Gaussian beams in fast and slow absorbers. Experimentally, partial bleaching of the first excited state itself could be observed in Cr/sup 4+/:YAG at /spl lambda/=1064 nm, yielding the higher excited-state lifetime as /spl tau/*=(0.55/spl plusmn/0.1) ns. The regular transmission bleaching curve was measured in Cr/sup 4+/:GGG, for the first time in this material, yielding /spl sigma//sub ga/=(58/spl plusmn/5)/spl times/10/sup -1/ cm/sup 2/, and /spl sigma/e/sub s/=(13/spl plusmn/2)/spl times/10/sup -19/ cm/sup 2/ at /spl lambda/=1064 nm, ESA spectra were measured for the three materials between /spl sim/700 and 900 nm. All three exhibit crossing between saturable absorption at longer wavelengths and inverse saturable absorption at shorter wavelengths.

Synthesis of Hybrid Inorganic-Organic Sol-Gel Coatings for Optics

ABSTRACTThe synthesis of transparent hybrid organic-inorganic coatings obtained from condensation between alkoxysilane containing grafted dyes (azo dyes or phthalocyanines) and metal alkoxides precursors has been performed. The Red 17 azo dye, known for its high second order polarisability, was bonded to the silicon oxide network following two procedures: a silylation reaction between Red 17 and triethoxysilane; a coupling reaction between Red 17 and 3-isocyanatopropyltriethoxysilane. Silicon phthalocyanines (known for their third order polarisability and inverse saturable absorption properties) were incorporated into the silicon oxide network by a silylation reaction. Phthalocyanine doped transparent hybrid organic-inorganic coatings were obtained from condensation between diethoxymethylsilane and zirconium propoxide precursors.