Several systems of metallic metal-oxide nanowires (NWs), including pureRuO2 and as-implantedand annealed Ru0.98Cu0.02O2 and Ru0.93Cu0.07O2 NWs, have been employed in two-probe electrical characterizations by using a transmissionelectron microscope–scanning tunneling microscope technique with a gold tip. Thermal,mechanical, and electron beam exposing treatments are consecutively applied to reduce theelectrical contact resistance, generated from the interface between the NW and the gold tip,so as to evaluate the intrinsic NW resistance. It is found that the residual contactresistance cannot be entirely removed. For each system of metallic metal-oxide NWs,several tens of NWs are applied to electrical characterizations and the total resistancesunveil a linear dependence on the ratio of the length to the area of the NWs. As aresult, the average resistivity and the contact resistance of the metallic metal-oxideNWs could be evaluated at room temperatures. The average resistivities of pureRuO2 NWs agree well with the results obtained from standard two- and four-probeelectrical-transport measurements. In addition, the as-implanted Cu–RuO2 NWs reveal disordered crystalline structures in high-resolution TEMimages and give higher resistivities in comparison with that of pureRuO2 NWs. The residual contact resistances of all kinds of metallic metal-oxide NWs unveil,more surprisingly, an approximation value of several kilohms, even though the averageresistivities of these NWs change by more than one order of magnitude. It is argued thatthe ductile gold tip makes one or more soft contacts on the stiff metal-oxide NWs withnanometer roughness and the nanocontacts on the NWs contribute to the electrical contactresistance.