Intracavity Contacts Research Articles

Investigation of the noise characteristics of vertical-cavity surface-emitting laser with a rhomboidal oxide current aperture for use in a Cs-based compact atomic magnetometer

The possibility of using vertical-emitting lasers with intracavity contacts (IC-VCSEL) and a rhomboidal oxide current aperture for creating a non-zero magnetic field optically pumped atomic magnetometers (OPM) with a 133Cs vapor cell for magnetoencephalographic (MEG) systems were demonstrated. Relative intensity noise (RIN) and polarization resolved RIN of the IC-VCSEL in the 895 nm range with different mirror losses (linewidth) in the frequency range from 1 Hz to 100 kHz were experimentally investigated. Lasers with low mirror loss (narrow linewidth) have polarization resolved RIN comparable to amplitude noise. For IC-VCSEL with an output optical power of 0.8 mW and a linewidth of 55 MHz, the noise level measured is 148 dB/Hz in 1 Hz bandwidth at 40 kHz frequency. The ultimate sensitivity of OPM based on two-beam MZ-scheme with studied VCSELs was estimated as ~ 11 fT/sqrt(Hz)sqrt. Keywords: vertical-cavity surface-emitting laser (VCSEL), magnetoencephalographic (MEG) systems, optically pumped atomic magnetometers (OPAM), relative intensity noise (RIN), polarization-resolved RIN.

Intensity noise characteristics of intracavity contacted VCSELs with rhomboidal oxide current aperture for the magnetometric sensor with Cs133 vapor cell used in magnetoencephalography

We demonstrate noise characterization of novel 894.4 nm vertical-cavity surface emitting lasers with intracavity contacts and a rhomboidal oxide current aperture (IC-VCSELs), dedicated to 133Cs D1 line compact optically pumped atomic magnetometers (OPM). The laser relative intensity noise, measured to be -139 dB/Hz at 10 kHz frequency in 1 Hz bandwidth for a laser optical power of 0.8 mW, is decreased with optical power growth. The IC-VCSELs polarization-resolved relative intensity noise is 143 dB/Hz at 10 kHz frequency in 1 Hz bandwidth for 0.8 mW. The emission linewidth of the VCSEL is about 55 MHz. The IC-VCSEL parameters are determined, such as emission linewidth ~ 50-60 MHz, optical power ~ 0.5-1.0 mW, at which the polarization-resolved RIN becomes close to the RIN, which makes it possible to use these lasers in various OPM Mz and Mx schemes. The ultimate sensitivity of OPM was estimated by the ratio of the magnetic resonance to the signal to noise level. It is shown that a OPM based on the IC-VCSELs, assuming magnetic resonance FWHM ~ 1 kHz, can achieve a shot noise-limited sensitivity around 20 fT in 1 Hz bandwidth without any polarization improvements by polarizer or polarization beam splitter cube (PBC). Developed IC-VCSELs is acceptable for use in compact OPM for magnetoencephalography.

Design of electrically driven single-photon source based on intra-cavity contacted microcavity with oxide-confined optical apertures emitting at 1.3 μm

We propose a hybrid microcavity design of a 1.3 μm range electrically driven single-photon source (SPS) consisting of two high-contrast dielectric distributed Bragg reflectors which surround a 3λ-thick semiconductor cavity with two intra-cavity contact layers and four 40-nm-thick oxide-confined apertures. According to 3D finite-difference time-domain modelling, the overall photon-extraction efficiency of ~74% and the Purcell factor of ~13 can be obtained by properly adjusting the position of oxide-confined apertures relative to the electric field of the fundamental optical mode. The studied SPS design also demonstrates a coupling efficiency of up to 13% within numerical aperture 0.12 in contrast to ~5% reached for a conventional semiconductor micropillar.

The Design of an Electrically-Driven Single Photon Source of the 1.3-μm Spectral Range Based on a Vertical Microcavity with Intracavity Contacts

The Design of an Electrically-Driven Single Photon Source of the 1.3-μm Spectral Range Based on a Vertical Microcavity with Intracavity Contacts

Конструкция источника одиночных фотонов спектрального диапазона 1.3 μm с инжекционной накачкой на основе вертикального микрорезонатора с внутрирезонаторными контактами

Electrically-pumped optical microcavity single photon sources based on single quantum dots are investigated by numerical modelling techniques. Design of electrically driven 1.3 μm-range single photon source with intra-cavity contacts and multiply oxide aperture layers is proposed. About two times improvement in photon coupling efficiency into the single-mode fiber is demonstrated as compared with single photon source based on cylindrical micropillar.

Исследование шумовых характеристик вертикально-излучающих лазеров с ромбовидной токовой апертурой для применения в компактном квантовом цезиевом магнитометре

The possibility of using vertical-emitting lasers with intracavity contacts (IC-VCSEL) and a rhomboidal oxide current aperture for creating a non-zero magnetic field optically pumped atomic magnetometers (OPM) with a 133Cs vapor cell for magnetoencephalographic (MEG) systems were demonstrated. Relative intensity noise (RIN) and polarization resolved RIN of the IC-VCSEL in the 895 nm range with different mirror losses (linewidth) in the frequency range from 1 Hz to 100 kHz were experimentally investigated. Lasers with low mirror loss (narrow linewidth) have polarization resolved RIN comparable to amplitude noise. For IC-VCSEL with an output optical power of 0.8 mW and a linewidth of 55 MHz, the noise level measured is 148 dB/Hz in 1 Hz bandwidth at 40 kHz frequency. The ultimate sensitivity of OPM based on two-beam MX scheme with studied VCSELs was estimated as ~ 11 fT/√Hz.

Optically pumped non-zero field magnetometric sensor for the magnetoencephalographic systems using intra-cavity contacted VCSELs with rhomboidal oxide current aperture

We demonstrate the possibility of using vertical-cavity surface emitting lasers with intracavity contacts and a rhomboidal oxide current aperture for creating compact optically pumped 133Cs atomic magnetometer operating in non-zero magnetic fields, which is promising to use in magnetoencephalographic systems. The magnetic resonance parameters were studied in a two-beam MX optically pumped magnetic field sensor scheme based on the effect of the magnetic resonance line narrowing at high laser pumping and high concentrations of alkali-metal atoms. The ultimate sensitivity of OPM was estimated by the ratio of the magnetic resonance steepness to the probe light shot noise level. It is shown that a magnetic sensor based on the vertical-cavity surface emitting lasers and a compact (0.125 cm3 volume) Cs vapor cell can achieve a shot noise-limited sensitivity better than 15 fT in 1 Hz bandwidth. Developed intracavity contacted VCSELs suitable for use in compact atomic magnetometers for magnetoencephalographic systems.

The fabrication technology of VCSELs emitting in the 1.55 μm waveband

The paper presents the results on fabrication technique of a 1,55 μm wafer-fused vertical-cavity surface-emitting lasers (VCSELs) based on the InAlGaAsP/InP optical cavity and AlGaAs/GaAs distributed Bragg reflectors (DBRs) grown by solid-source molecular beam epitaxy. The optical cavity InAlGaAsP/InP containes an active region based on multiple InGaAs quantum wells, n++/p++-In (Al)GaAs buried tunnel junction (BTJ), InGaAsP intracavity contact layers and n-InP spreading layers. The top and bottom AlGaAs/GaAs DBRs were grown on GaAs substrate, while the optical cavity InAlGaAsP/InP was grown on InP substrate. The main fabrication proceseses of 1,55 μm VCSELs such as: BTJ fabrication, dry etching of first mesa on top DBR, wet etching of second VCSEL mesa, forming of the ohmic contacts and passivation of the VCSEL structure were described in details.

Theoretical Analysis of Tunnel-Injected Sub-300 nm AlGaN Laser Diodes

Electrically-pumped AlGaN-based edge-emitting laser diodes with a buried tunnel junction (TJ) for sub-300 nm emission are designed in this paper. Hole injection is one of the major concerns for the design of ultraviolet (UV) lasers based on this material system. The use of a low-resistive TJ as an intracavity contact within the devices will offer an opportunity to replace highly resistive p-type AlGaN-based cladding and contact layers by their n-doped counterparts. This advanced polarization-engineered interband TJs will lead to improved hole injection and a significantly reduced threshold voltage. The thermal properties of the tunnel-injected devices are thoroughly studied theoretically. For the demonstration of continuous-wave operating lasers, possible improvements in terms of better thermal management of the device are also discussed. Our improved design allows CW-operating AlGaN lasers with a threshold current density of <; 8 kA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and maximum optical output power of > 220 mW, yielding a wall-plug efficiency of > 2.8%.

Design of AlGaN-based lasers with a buried tunnel junction for sub-300 nm emission

This paper discusses the design of electrically-pumped AlGaN-based in-plane lasers emitting at ∼290 nm. Our laser design utilizes strained Al0.5Ga0.5N quantum wells, and a novel polarization engineered AlGaN/InGaN/AlGaN-based tunnel junction. The low ­resistive tunnel junction is used as an intracavity contact in the device in place of the resistive p-type contact; which leads to improved hole injection and a reduced threshold voltage. Hence, room-temperature continuous-wave laser operation could be enabled. Strategies to improve the performance of the tunnel junction contact through the incorporation of low concentrations of boron in the highly-doped AlGaN tunnel junction layers as a means to increase the polarization sheet charge are also discussed.

Vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal current aperture for compact atomic clocks

Single-mode vertical-cavity surface-emitting lasers (VCSELs) with intracavity contacts, composite distributed Bragg reflectors, and a rhomboidal selectively-oxidised current aperture are studied. It is shown that the use of a rhomboidal current aperture allows the light output polarisation to be fixed without using a special surface relief and leads to efficient narrowing of the emission line with retaining a high slope efficiency. The developed VCSELs have a high output power (exceeding 1 mW), a threshold current below 1 mA, an effective modulation frequency exceeding 5 GHz, and a linewidth smaller than 60 MHz at increased (65 – 75 °C) temperatures and are promising for application in compact Cs vapour cell atomic clocks.

Intracavity metal contacts for organic microlasers

Abstract

GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

We report the first demonstration of III–nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal–organic chemical vapor deposition (MOCVD). For the TJs, n++-GaN was grown on in-situ activated p++-GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of ∼15 mA (10 kA/cm2), a threshold voltage of 7.8 V, a maximum output power of 319 µW, and a differential efficiency of 0.28%.

Continuous-wave operation of m-plane GaN-based vertical-cavity surface-emitting lasers with a tunnel junction intracavity contact

We have achieved continuous-wave (CW) operation of an optically polarized m-plane GaN-based vertical-cavity surface-emitting laser (VCSEL) with an ion implanted current aperture, a tunnel junction intracavity contact, and a dual dielectric distributed Bragg reflector design. The reported VCSEL has 2 quantum wells, with a 14 nm quantum well width, 1 nm barriers, a 5 nm electron-blocking layer, and a 23λ total cavity thickness. The thermal performance was improved by increasing the cavity length and using Au-In solid-liquid interdiffusion bonding, which led to lasing under CW operation for over 20 min. Lasing wavelengths under pulsed operation were observed at 406 nm, 412 nm, and 419 nm. Only the latter two modes appeared under CW operation due to the redshifted gain at higher temperatures. The peak output powers for a 6 μm aperture VCSEL under CW and pulsed operation were 140 μW and 700 μW, respectively. The fundamental transverse mode was observed without the presence of filamentary lasing. The thermal impedance was estimated to be ∼1400 °C/W for a 6 μm aperture 23λ VCSEL.

Влияние конструкции резонатора на ширину линии одномодовых вертикально-излучающих лазеров ближнего ИК-диапазона

AbstractThe studies of the emission linewidth for single-mode near-IR vertical-cavity surface-emitting lasers with an active region based on InGaAs/AlGaAs quantum wells and different optical microcavity design. For low mirror loss, lasers with a 1λ cavity and carrier injection through distributed Bragg reflectors demonstrate a linewidth of 70 MHz and its growth to 110 MHz with increasing mirror loss (corresponding differential of efficiency ∼0.65 W/A). The design of the optical cavity with carrier injection through intracavity contacts and low-Q composition Bragg lattices reduces the linewidth to 40 MHz in spite of high mirror loss (corresponding differential efficiency of ∼0.6 W/A).

The Influence of Cavity Design on the Linewidth of Near-IR Single-Mode Vertical-Cavity Surface-Emitting Lasers

The studies of the emission linewidth for single-mode near-IR vertical-cavity surface-emitting lasers with an active region based on InGaAs/AlGaAs quantum wells and different optical microcavity design. For low mirror loss, lasers with a 1λ cavity and carrier injection through distributed Bragg reflectors demonstrate a linewidth of 70 MHz and its growth to 110 MHz with increasing mirror loss (corresponding differential of efficiency ∼0.65 W/A). The design of the optical cavity with carrier injection through intracavity contacts and low-Q composition Bragg lattices reduces the linewidth to 40 MHz in spite of high mirror loss (corresponding differential efficiency of ∼0.6 W/A).

Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture

The polarization characteristics of 850-nm vertical-cavity surface-emitting lasers (VCSELs) with intracavity contacts and a rhomboidal oxide current aperture are studied. It is found that radiation polarization is always directed along the minor diagonal of the rhomboidal aperture (along the [\(\overline 1 \) 10] direction) for all single-mode VCSELs. The numerical simulation of carrier transport does not reveal the significant anisotropy of carrier injection to the active region. Furthermore, an analysis of the spatial distribution of the fundamental mode for two orthogonal polarizations within an effective waveguide model shows close transverse optical-confinement factors. Optical loss anisotropy in the asymmetric microcavity and/or gain anisotropy in the strained active region are the most likely mechanisms responsible for fixing the polarization.

A study of distributed dielectric bragg reflectors for vertically emitting lasers of the near-IR range

Studies aimed at optimization of the design of a dielectric distributed Bragg reflector (DBR) produced by the reactive magnetron sputtering method for applications in near-IR vertical-cavity surface-emitting lasers with intracavity contacts (ICC-VCSELs) are carried out. It is shown that the reflectivity of the dielectric DBRs based on SiO2/TiO2 decreases due to the polycrystalline structure of the TiO2 layers, which causes diffusive scattering of light. In contrast, amorphous Ta2O5 layers is characterized by a low surface roughness and low fluctuation in the refractive index. Single-mode ICC-VCSELs in the 980-nm spectral range with dielectric DBR based on SiO2/Ta2O5 with a threshold current less than 0.27 mA, electric resistance of less than 200 Ω, and differential efficiency of more than 0.8 W/A are demonstrated.

GaSb-based vertical-cavity surface-emitting lasers with an emission wavelength at 3 μm.

GaSb-based electrically pumped vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction emitting at 3 μm are demonstrated. To achieve this, a low optical loss VCSEL concept with an undoped epitaxial distributed Bragg reflector and intracavity contact is presented. The devices operate up to 5°C continuous wave and up to 50°C in pulsed mode. Single-mode operation with a side-mode suppression ratio of 30 dB and electro-thermal tuning range of 19.7 nm is achieved.

Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts

We carried out a series of simulations analyzing the dependence of mirror reflectance, threshold current density, and differential efficiency on the scattering loss caused by the roughness of tin-doped indium oxide (ITO) intracavity contacts for 405 nm flip-chip III-nitride vertical-cavity surface-emitting lasers (VCSELs). From these results, we determined that the ITO root-mean-square (RMS) roughness should be &amp;lt;1 nm to minimize scattering losses in VCSELs. Motivated by this requirement, we investigated the surface morphology and optoelectronic properties of electron-beam (e-beam) evaporated ITO films, as a function of substrate temperature and oxygen flow and pressure. The transparency and conductivity were seen to increase with increasing temperature. Decreasing the oxygen flow and pressure resulted in an increase in the transparency and resistivity. Neither the temperature, nor oxygen flow and pressure series on single-layer ITO films resulted in highly transparent and conductive films with &amp;lt;1 nm RMS roughness. To achieve &amp;lt;1 nm RMS roughness with good optoelectronic properties, a multi-layer ITO film was developed, utilizing a two-step temperature scheme. The optimized multi-layer ITO films had an RMS roughness of &amp;lt;1 nm, along with a high transparency (∼90% at 405 nm) and low resistivity (∼2 × 10−4 Ω-cm). This multi-layer ITO e-beam deposition technique is expected to prevent p-GaN plasma damage, typically observed in sputtered ITO films on p-GaN, while simultaneously reducing the threshold current density and increasing the differential efficiency of III-nitride VCSELs.