Self-assembled monolayers (SAMs) and self-forming barriers (SFBs) are highly effective barriers of copper (Cu) interconnect systems. However, the barrier capability of SAMs and SFBs to contact metallization of cobalt (Co), a new important interconnect material, is yet to be explored. Here, contact layers of NiSi are grown by a two-step silicidation process on Si. Then, an all-wet SAM-seeding and electroless-plating process is used to coat (in sequence) an amine SAM and a MnO-added (only 0.1%) Co film onto NiSi/Si, using a specifically formulated N2H4-CoSO4-MnSO4 bath. The thermal stability of the Co(MnO)/SAM/NiSi/Si is evaluated, using (unalloyed) Co/SAM/NiSi/Si as a control. The 1.3 nm-thin SAM cannot protect the Co/SAM/NiSi/Si from catastrophic failure upon annealing, associated with serious Co/Si interfacial diffusion and the formation of faceted CoSi crystallites and a layered Co2Si/CoSi2 nanostructures at specific locations. By contrast, the Co(MnO)/SAM/NiSi/Si maintains an intact stack after annealing. Collaborative research results generated from (scanning) transmission electron microscopy, nanoscratch testing and surface-energy measurements suggest that the thermal stability enhancement of the whole Co(MnO)/SAM/NiSi/Si contact stack is related to the interfacial segregation of the added MnO as sub-5-nm dispersive crystalline particles, giving multiple functionalities as a SFB, Co-grain strengthening agent, and wetting/adhesion promoter.
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