An in situ low-angle x-ray diffraction technique is used to investigate interdiffusion phenomena in various metal-metal and metal-amorphous Si nanometer-scale compositionally modulated multilayers ~ML’s !. The temperature-dependent interdiffusivities are obtained by accurately monitoring the decay of the first-order modulation peak as a function of annealing time. Activation enthalpies and preexponential factors for the interdiffusion in the Fe-Ti, Ag-Bi, Fe-Mo, Mo-Si, Ni-Si, Nb-Si, and Ag-Si ML’s are determined. Activation enthalpies and preexponential factors for the interdiffusion in the ML’s are very small compared with that in amorphous alloys and crystalline solids. The relation between the atomic-size difference and interdiffusion in the ML’s are investigated. The observed interdiffusion characteristics are compared with that in amorphous alloys and crystalline a-Zr, a-Ti, and Si. The experimental results suggest that a collective atomic-jumping mechanism govern the interdiffusion in the ML’s, the collective proposal involving 8‐15 atoms moving between extended nonequilibrium defects by thermal activation. The role of the interdiffusion in the solid-state reaction in the ML’s is also discussed. @S0163-1829~99!01516-7# Multilayers ~ML’s ! are of technologically useful physical properties and potential application in microelectronic device. 1‐3 ML’s can also provide a model system for scientists to investigate fundamental phenomena such as interface properties, stabilization of nonequilibrium structure and strains, and coupling interactions in magnetism and transport behavior. Therefore, the interdiffusion study in the compositionally modulated ML’s are interesting subjects. 3‐7 From a scientific point of view the diffusion mechanism in ML’s is still poorly understood, and a knowledge of the interdiffusion data and mechanism is highly desired for understanding the physical properties and phenomena in the ML’s. From a technological viewpoint, the knowledge of the interdiffusion is an important prerequisite for application of the ML’s. The discovery of solid-state interfacial reaction ~SSIR! in the thin films has further added to the importance of interdiffusion investigations in these materials. However, despite many years of effort, the interdiffusivity in the ML’s has remained poorly quantified. 7 This is because of the measurement difficulties associated with low diffusivity ~less than 10 223 m 2 /s) in the ML’s at low-annealing temperature. The difficulties are even higher in the amorphous ML’s because the measurements must be done at a sufficiently low temperature to avoid crystallization in amorphous ML’s. The difficulties inherent to diffusion experiments in amorphous ML’s can also be due to the metastability, which implies small mean-squared displacements. Rutherford backscatter
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