Interband Electronic Transitions Research Articles

The effects of spin–orbit coupling on optical properties of electronic Lieb lattice in the presence of magnetic field

In this paper, the optical conductivity of a two-dimensional Lieb lattice that is a line-centered square lattice is investigated in the presence of magnetic field and spin–orbit coupling. Specially, we address the frequency dependence of optical conductivity due to spin–orbit interaction. Using Green’s function approach, the behavior of optical conductivity has been obtained in the context of Kane–Mele model Hamiltonian. In the presence of magnetic field at low spin–orbit coupling strength, optical conductivity includes only Drude weight at zero frequency limit while interband transitions of electrons have no contribution to optical conductivity for each gap parameter below normalized value 0.6. However the increase of spin–orbit coupling strength causes to appear finite frequency peak in optical conductivity. Moreover our results show that optical conductivity increases with temperature for each value of spin–orbit coupling and magnetic field. Also we have studied the effects of magnetic field, electron doping and spin–orbit coupling on temperature dependence of optical conductivity of Lieb monolayer.

Interband Electron Transitions Energy in Multiple HgCdTe Quantum Wells at Room Temperature

The studies of the interband electron transition energy in multiple Hg1-xCdxTe/Hg1-yCdyTe quantum wells (MQWs) at room temperature were carried out. The MQWs were grown on the (013) GaAs substrate by molecular beam epitaxy, with the layer composition and thickness being measured by the in-situ ellipsometric parameters measurement at the nanometer level. The Hg1-xCdxTe barrier composition and width were x = 0.69 and 30 nm, respectively. The Hg1-yCdyTe well composition was y = 0.06–0.10, and the width varied in the range of 2.7–13 nm. The experimental data of the interband electron transition energy were determined by the absorption spectral analysis. The calculation of the interband electron transition energy was carried out on the basis of the four-band Kane model. A good agreement between the experimental and calculated data was obtained. It was shown that MQWs may be used as a photosensitive material for creating infrared optoelectronic devices operating in different modes in the range of 3–10 μm at room temperature.

High-performance broadband photodetector based on plasmonic semiconductor-semiconductor p-n Cu1.8S/AZO interface

Plasmonic semiconductor nanocrystals (NCs) provide intriguing optical properties which offer opportunities to extend the photo-response corresponding to photons with energies less than the semiconductor energy band gap. However, the performance of photodetectors based on individual plasmonic semiconductors is restricted due to very short-living photo-carriers, followed by carrier recombination (∼ 100 ps). Herein, a plasmonic semiconductor-semiconductor p-n interface (Cu1.8S/AZO NCs) was constructed representing 2-fold optical characteristics containing an inter-band electronic transition from the valence to conduction band in response to ultraviolet-visible (UV–vis) excitation and plasmon-induced interfacial charge-transfer transition (PICTT) in response to near infrared (NIR) excitation. We demonstrated that AZO NCs, are appropriate candidates to generate chemical interface damping (CID) of plasmons in Cu1.8S NCs as an acceptor, which is required for PICTT pathway. The device displayed outstanding broadband UV–vis–NIR photoresponsivity (R) and response-time (Trise/Tfall) as high as R = 51.48 A/W, Trise/Tfall= 130/100 ms in 390 nm, R = 37.2 A/W, Trise/Tfall= 50/60 ms in 535 nm, R = 45.6 A/W, Trise/Tfall= 400/10 ms in 750 nm and R = 38.7 A/W and Trise/Tfall= 60/50 ms in 950 nm. This study demonstrates the promising potential of plasmonic semiconductor-semiconductor p-n hybrid systems as high-performance broadband photodetectors (PDs).

Launching Plasmons in a Two-Dimensional Material Traversed by a Fast Charged Particle.

We use a dielectric-response formalism to compute the induced charge density and the induced potential in a conductive two-dimensional (2D) material, traversed by a charged particle that moves on a perpendicular trajectory with constant velocity. By analyzing the electric force on the material via the Maxwell stress tensor, we showed that the polarization of the material can be decomposed into a conservative part related to the dynamic image force, and a dissipative part describing the energy and momentum transfer to the material, which is ultimately responsible for launching the plasma oscillation waves in the material. After showing that the launching dynamics is fully determined by the Loss function of the material, we used a conductivity model suitable for the terahertz to the midinfrared frequency range, which includes both the intraband and interband electron transitions in the material, to compute the real-space and time animations of the propagating plasma waves in the plane of the material. Finally, we used a stationary phase analysis to show that the plasmon wave crests go into an overdamped regime at large propagation distances, which are comparable to the distances where retardation effects are expected to emerge due to hybridization of the plasmon dispersion with the light line at long wavelengths.

Modeling of the interband transitions in the optical conductivity of doped two-dimensional materials in the terahertz to the infrared frequency range: the case studies of graphene and phosphorene

We use Kramers-Kronig analysis and ab initio calculations to develop a simple analytical method for including the effects of high-energy interband electron transitions in the density polarization function of doped graphene and doped phosphorene in the optical limit. The resulting formulas are suitable for applications in the terahertz to the mid-infrared range of frequencies, where the interband electron transitions are shown to give rise to static screening with a suitably chosen in-plane polarizability. In the case of phosphorene, each component of its static polarizability tensor can be computed from a sum-rule–like formula using the ab initio data for the real part of the corresponding component of the full optical interband conductivity tensor of that material.

Au@C/Pt core@shell/satellite supra-nanostructures: plasmonic antenna-reactor hybrid nanocatalysts.

Integration of plasmonic nanoantennas with catalytically active reactors in deliberately designed hybrid supra-nanostructures creates a dual-functional materials platform, based upon which precise modulation of catalytic reaction kinetics becomes accomplishable through optical excitations of plasmon resonances. Here, we have developed a multistep synthetic approach that enables us to assemble colloidal Au@C/Pt core@shell/satellite supra-nanostructures, in which the Au core functions as a light-harvesting plasmonic nanoantenna, the Pt satellites act as catalytically active reactors, and the C shell serves as a nanoscale dielectric spacer separating the reactors from the antenna, respectively. By adjusting several synthetic parameters, the size of the Au core, the thickness of the C shell, and the surface coverage of Pt satellites can all be tuned independently. Choosing Pt-catalyzed cascade oxidation of 3,3',5,5'-tetramethylbenzidine in an aerobic aqueous environment as a model reaction, we have systematically studied the detailed kinetic features of the catalytic reactions both in the dark and under visible light illumination over a broad range of reaction conditions, which sheds light on the interplay between plasmonic and catalytic effects in these antenna-reactor nanohybrids. The plasmonic antenna effect can be effectively harnessed to kinetically modulate multiple crucial steps during the cascade reactions, benefiting from plasmon-enhanced interband electronic transitions in the Pt satellites and plasmon-enhanced intramolecular electronic excitations in chromogenic intermediate species. In addition to the plasmonic antenna effect, photothermal transduction derived from plasmonic excitations can also provide significant contributions to the kinetic enhancements under visible light illumination. The knowledge gained from this work serves as important guiding principles for rational design and structural optimization of plasmonic antenna-reactor hybrid nanomaterials, endowing us with enhanced capabilities to kinetically modulate targeted catalytic/photocatalytic molecule-transforming processes through light illumination.

Cole-Cole analysis and optoelectronic properties, using VEELS, of KNNS ferroelectric ceramics

In this work, Cole-Cole analysis and optoelectronic properties were carried out on K 0.1 Na 0.9 Nb 0.97 Sb 0.03 O 3 (KNNS) ferroelectric ceramics with tetragonal phase. Moreover, some evidence of the 180° domains, relating the electronic interband transitions (J cv ) and the Cole-Cole plot obtained from the complex dielectric function constants. Both obtained by Kramers-Krӧnig analysis. The experimental method enabled monitoring the materials properties of the material between inter-bands transitions and plasmons. Concerning the optical reflection coefficient observed from KNNS, the observed values of reflection coefficients were about 15% for an energy loss of 0 eV and a peak value at about 32% at 5 eV, followed by a second peak equivalent to 18% at 11 eV. The number of effective electrons (n eff ) participating in the inter-band transitions of the KNNS material is relevant up to 40 eV. These results suggest that KNNS could be a material to enable terahertz waveguide, enabling a new generation of high-speed communications devices. • Cole-Cole analysis and optoelectronic properties were carried out on KNNS (K0.1Na0.9Nb0.97Sb0.03O3) • Ferroelectrics 180° domains is identified by HRTEM. • Electronic Interband transitions J cv and the Cole-Cole plot obtained from the dielectric function. • The number of effective electrons (neff) in the inter-band transitions of the material is up to 40 eV. • These results suggest that KNNS could be a material for terahertz waveguiding.

Systematic investigation of the mechanical, electronic structure and optical properties of halide double perovskite Cs2BSbBr6 (B = Li, Na, K, Rb) with first-principles method

Halide double perovskite Cs2BMX6 possesses excellent photoelectronic properties. The material properties would have been markedly influenced by the variant electronic structures if the chemical elements of B, M and X had been changed. In this paper, we have a systematic investigation on the mechanical, electronic structure and optical properties of Cs2BSbBr6 (B[Formula: see text][Formula: see text][Formula: see text]Li, Na, K, Rb) using first-principles method. The results show that Cs2LiSbBr6 and Cs2NaSbBr6 are indirect band gap semiconductors, while Cs2KSbBr6 and Cs2RbSbBr6 are direct band gap semiconductors. The band gap values of Cs2BSbBr6 (B = Li, Na, K, Rb) are 2.81, 2.96, 3.37 and 3.36[Formula: see text]eV, respectively. It is worth noting that the band gap value of Cs2BSbBr6 increases with the increased atomic number of B (Li–Na–K–Rb) atoms. Due to the inter-band transition of electrons, the strong absorption spectrum occurs in the visible region. These physical and electronic properties of Cs2BSbBr6 provide references for the potential applications.

Effect of C3v symmetry breaking on the noncentrosymmetric quantum spin Hall insulating phase and optical characteristics of monolayer PbBiI

Due to the rise of applications in several optoelectronic and spintronic platforms, theoretically engineering the propagation of light in low-dimensional systems dealing with both charge and spin degrees of freedom has recently triggered considerable interest. By breaking the ${C}_{3v}$ symmetry through external exchange fields, we engineer the propagation of an incident circularly polarized light in a noncentrosymmetric quantum spin Hall insulator, monolayer PbBiI, that is active in the near-infrared region of the electromagnetic spectrum. The Kubo formalism is ideal for optical properties. We endeavor to thoroughly demonstrate that a critical-breaking regime of three types of fields leads to various anisotropic electronic phases and optical interband transitions. We find various near-to-far infrared shifts for the optical activity of the system when the ${C}_{3v}$ symmetry breaking fields are turned on. This is proven in the ensuing two ways: The spectrum of optical conductivity components and the intensities of scattered/absorbed light. We further find the criteria under which the system is transparent. Finally, depending on the exchange fields, we engineer the eccentricities for the reflected and transmitted lights in monolayer PbBiI to see how the polarization of incident circular light becomes linear and elliptical. The applicability of results in industry and medicine is also briefly discussed.

Effect of Structural Morphology and Material Factors on Radiative Properties of Hybrid Perovskite/Nanoporous GaN Hierarchical Composite Structure

The encapsulation of hybrid perovskite in nanoporous GaN is a promising strategy to reduce perovskite degradation and improve photoelectric performance. Exploitation of the intrinsic light-matter interaction in such a composite structure greatly benefits improving device optimization. Herein, we report the perovskite synthesis, structural design, and radiative properties of perovskite/nanoporous GaN hierarchical composites using spectroscopic ellipsometry (SE) experiments as well as electromagnetic simulations. First-principles calculations reveal the relationship between electronic interband transitions and the dielectric function of perovskite measured by SE. We use the finite-difference time-domain (FDTD) and finite-element method (FEM) simulations to analyze the spectral radiation properties for the hierarchical composite structure in terms of both morphology dependence and material factors. The optical absorption peaks in the near-infrared–visible region are collectively determined by the nanopore size, layer thickness, and incident angle of light. Also, the optical absorption distribution patterns are related to variables of the halogen, metal elements, and temperature. This work is integrated with the development of perovskite-based applications for solar functional batteries, light-emitting diodes (LED), and optoelectronic detectors.

Stopping and image forces acting on a charged particle moving near a graphene- Al2O3 -graphene heterostructure

We study the impact of plasmon-phonon hybridization on the stopping and image forces acting on a charged particle moving parallel to a graphene-${\mathrm{Al}}_{2}{\mathrm{O}}_{3}$-graphene sandwichlike composite system by considering a broad domain in the parameter space. The effective dielectric function of the system is obtained using two descriptions of the electronic response of doped graphene: an ab initio method based on the time-dependent density functional theory calculations and an analytical expression based on the massless Dirac fermion (MDF) approximation for graphene $\ensuremath{\pi}$ bands. It is found that the main discrepancies between the two methods come from the high-energy interband electron transitions, which are included in the ab initio method but not in the MDF method. Special attention is paid to the regime of low-particle speeds, where the MDF method compares well with the ab initio method, but the modeling is sensitive to the effects of finite temperature and the treatment of phenomenological damping. It is observed at low particle speeds that both forces exhibit an interesting interplay between the hybrid modes of the phononic type and the continuum of the intraband electron-hole excitations in graphene. Furthermore, the effects of the lowest-energy antisymmetric modes, which exhibit acoustic dispersions at long wavelengths in a system with equally doped graphene layers, are exposed in calculations of the stopping force on a co-moving pair of incident particles with opposite charges that are symmetrically positioned around the target system.

First-Principles Study of the Optical Properties of Zinc Antimonide Using the mBJ Approximation

This computational study focused on the optical properties of zinc antimonide ZnSb. It relates to the complex dielectric function ε (ω), the refractive index n (ω), the extinction function k (ω), the optical conductivity σ (ω), the reflectivity R(ω), the absorption coefficient α (ω) and the energy loss spectrum L(ω). These properties are calculated and discussed for a growing energy of the incident electromagnetic radiation ranging from 0 to 14 eV, comprising infrared, visible and ultraviolet regions. All these properties are obtained using the Full Potential Linearized Augmented Plane Wave (FP-LAPW), by solving Kohn-Sham equations. This method based on Density Functional Theory (DFT), implemented in Wien2k simulation package. This compound is already used in photo-optical applications, it is for this reason that we interested in the calculation of its optical properties according to the energy of the incident photons, in order to open up for it other use ways. Since the zinc antimonide ZnSb is a semiconductor, its optical properties are investigated using Generalized Gradient Approximation plus modified Becke–Johnson as the exchange correlation (GGA-mBJ). Our calculations are performed by considering only the interband transition of electrons between the occupied states in valence band and unoccupied conduction band states along high symmetry points in Brillouin zone. In addition, the relations of the optical properties to these transitions are discussed in detail. We have also verified the Penn’s model by showing the inverse relationship between the static real part of dielectric function ε1(0) and the optical band gap Eg. The results obtained are compared with other results existing in the literature.

Ab-initio study of Nb-based complex materials: A new class of materials for optoelectronic applications

We have studied electronic, optical and spintronic properties of Nb based complex materials NaNdANbO6F (A= Ti, Zr, Co, Ni) by using density functional theory (DFT) calculations. State-of-the-art generalized gradient approximation is used by adding Hubbard correction (GGA+U) to treat exchange-correlation potential of the electronic system. From the energy band structures, we observed that NaNdTiNbO6F (3.7 eV) and NaNdZrNbO6F (4.0 eV) are direct and indirect band gap materials, respectively. However, NaNdCoNbO6F and NaNdNiNbO6F are halfmetallic compounds having energy band gaps in spin (↑) (spin (↓)) channel of 2.2 (1.75) and 2.5 (3.6) eV, respectively. Effective contributions of different compounds and electronic states are analyzed by studying total and partial density of states. These compounds are potential candidates to be utilized in spintronic devices as they have significant values of magnetic moments, shown in Table 1. We have used an energy range of 0–14 eV to calculate and explain important optical characteristics of NaNdANbO6F (A= Ti, Zr, Co, Ni). These material falls in the category of optically active materials as their values of n(ω) lie between 1.0 and 2.0. These compounds are also potential candidates for the anti-reflective coating applications as they reflect maximum of 45 % of incident photons in upper UV region. Finally, optical parameters are also used to explain contributions of inter-band electronic transitions in these compounds. This study might be considered as first quantitative theoretical study of magnetic, electronic and optical behavior in the tetragonal phases of these Nb based complex materials.

Anisotropic and tunable optical conductivity of a two-dimensional semi-Dirac system in the presence of elliptically polarized radiation

We investigate the effect of ellipticity ratio of the polarized radiation field on optoelectronic properties of a two-dimensional (2D) semi-Dirac (SD) system. The optical conductivity is calculated within the energy balance equation approach derived from the semiclassical Boltzmann equation. We find that there exists the anisotropic optical absorption induced via both the intra- and interband electronic transition channels in the perpendicular $xx$ and $yy$ directions. Furthermore, we examine the effects of the ellipticity ratio, the temperature, the carrier density, and the band-gap parameter on the optical conductivity of the 2D SD system placed in transverse and vertical directions, respectively. It is shown that the ellipticity ratio, temperature, carrier density, and band-gap parameter can play the important roles in tuning the strength, peak position, and shape of the optical conductivity spectrum. The results obtained from this study indicate that the 2D SD system can be a promising anisotropic and tunable optical and optoelectronic material for applications in innovative 2D optical and optoelectronic devices, which are active in the infrared and terahertz bandwidths.

Generating ultraviolet perfect vortex beams using a high-efficiency broadband dielectric metasurface.

Due to the topological charge-independent doughnut spatial structure as well as the association of orbital angular momentums, perfect vortex beams promise significant advances in fiber communication, optical manipulation and quantum optics. Inspired by the development of planar photonics, several plasmonic and dielectric metasurfaces have been constructed to generate perfect vortex beams, instead of conventional bulky configuration. However, owing to the intrinsic Ohmic losses and interband electron transitions in materials, these metasurface-based vortex beam generators only work at optical frequencies up to the visible range. Herein, using silicon nitride nanopillars as high-efficiency half-wave plates, broadband and high-performance metasurfaces are designed and demonstrated numerically to directly produce perfect vortex beams in the ultraviolet region, by combining the phase profiles of spiral phase plate, axicon and Fourier transformation lens based on geometric phase. The conversion efficiency of the metasurface is up to 86.6% at the design wavelength. Moreover, the influence of several control parameters on perfect vortex beam structures is discussed. We believe that this ultraviolet dielectric generator of perfect vortex beams will find many significant applications, such as high-resolution spectroscopy, optical tweezer and on-chip communication.

The anisotropic broadband surface plasmon polariton and hot carrier properties of borophene monolayer

Abstract Borophene monolayer with its intrinsic metallic and anisotropic band structures exhibits extraordinary electronic, optical, and transport properties. Especially, the high density of Dirac electrons enables promising applications for building low-loss broadband SPP devices. However, a systematic characterization of the surface plasmon polariton (SPP) properties and hot carriers generated from the inevitable SPP decay in borophene has not been reported so far. Most importantly, the mechanism for SPP losses remains obscurely quantified. In this work, from a fully first-principles perspective, we explicitly evaluate the main loss effects of SPP in borophene, including the Drude resistance, phonon-assisted intraband and direct interband electronic transitions. With this knowledge, we further calculate the frequency- and polarization-dependent SPP response of borophene, and evaluate some typical application-dependent figure of merits of SPP. On the other hand, we evaluate the generation and transport properties of plasmon-driven hot carriers in borophene, involving energy- and momentum-dependent carrier lifetimes and mean free paths, which provide deeper insight toward the transport of hot carriers at the nanoscale. These results indicate that borophene has promising applications in next-generation low-loss optoelectronic devices and photocatalytic reactors.

First-principles study of strain effect on magnetic and optical properties in (Ga, Mo)Sb

In recent decades, as a kind of critical material in spintronics field, the diluted magnetic semiconductor with high temperature and intrinsic ferromagnetism has attracted extensive attention. In order to explore the approach to enhancing Curie temperature (<i>T</i><sub>C</sub>), the LDA+<i>U</i> method of the first-principles calculation is adopted to study the effect of strain on electronic structure, magnetic and optical properties in Mo doped GaSb system. The results indicate that the structure of GaSb is stable with strain in a range of –6%—2.5%. Plasticity and toughness of GaSb increase under compressive strains, which is conducive to the improvement of the mechanical properties. The strain affects the electronic structure of Mo<sub>Ga</sub> greatly. In a range from –3% to –1.2%, Mo<sub>Ga</sub> is in the low spin state (LSS) with a 1<inline-formula><tex-math id="M3">\begin{document}${\mu _{{\rm{B}}}}$\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="9-20212316_M3.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="9-20212316_M3.png"/></alternatives></inline-formula>local magnetic moment, while in a range of –1.1%—2%, Mo<sub>Ga</sub> is in high spin state (HSS) with a 3<inline-formula><tex-math id="M4">\begin{document}${\mu _{{\rm{B}}}}$\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="9-20212316_M4.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="9-20212316_M4.png"/></alternatives></inline-formula>moment. The magnetic interactions between Mo<sub>Ga</sub> and Mo<sub>Ga</sub> are all ferromagnetic for LSS and so is the case for HSS, although they are different in coupling intensity and mechanism. In particular, appropriate compressive strains can improve the strength of ferromagnetic coupling effectively and are favorable for the preparation of the GaSb-based diluted magnetic semiconductors with high Curie temperatures and inherent ferromagnetism. Moreover, we find that Mo can greatly improve the polarization capability of GaSb and play a vital role in forming and separating the electron-hole pairs, and thus further improving the photoelectric conversion capability for long wave photons. The energy required to absorb photons for inter-band transition of electrons decreases because of the impurity levels induced by Mo, which leads the absorption edge to be red-shifted. The optical properties of (Ga,Mo)Sb in infrared region are further enhanced by the tensile strain.

Plasmonic responses with topological transition in semimetallic monolayer WTe2

Recently, semimetallic tungsten ditelluride (WTe2) has been proposed as a natural material that supports hyperbolic plasmonic responses. In this paper, we have theoretically discovered that such hyperbolicity, which is due to strongly anisotropic in-plane interband transition of electrons, exists even in the monolayer and can become elliptic under proper doping. Using density functional theory, the permittivities include both the interband and intraband parts have been calculated, which are then used to derive the in-plane conductivities. Based on two-dimensional conductivity, the dispersion relations of the plasmonic modes in the extended monolayer have been analytically solved. It is surprising that monolayer WTe2 supports both elliptic as well as hyperbolic plasmonic responses in the infrared. Edge-confined modes in the extended monolayer in the elliptic regime and waveguiding modes in nanoribbons in the hyperbolic regime have been numerically investigated. After being doped with electrons, the Fermi level is shifted; it is found that moderate electron doping can change the topology of the plasmonic responses from a hyperbolic to an elliptic one within some frequency range. The effects of band broadening are also discussed and the permittivities are calculated using optimal basis functions to further verify our main conclusions. Then, the states corresponding to large interband transition peaks are marked and the wavefunctions are used to explain the strong in-plane dipole. In the end, the permittivities of bulk WTe2 have been investigated. Our investigations indicate that monolayer WTe2 is a promising platform for plasmonic applications.

Indirect momentum excitation of graphene using high transversal modes of light in hyperbolic media.

Electrons in indirect semiconductors can optically transit between the valance and conduction band edges only when the momentum conservation is satisfied with help of a third quasi-particle, such as a phonon. In this report, we theoretically demonstrate that indirect interband transition of graphene electrons can be optically enabled only by light with highly enhanced transversal modes, which can be generated by scattering of point dipole radiation with periodic metal slits fabricated in a natural hyperbolic material. The light-matter interaction for graphene electrons is reformulated by using indirect transition matrix elements, and interband polarizations of graphene are obtained by solving quantum kinetic equations of motion in the semi-classical regime. The interband optical current density of graphene as a function of the polarization angle of the incident field shows clear hexagonal response to the high transversal modes of light, which results from the low dependence on dephasing rate and dominance of the indirect polarizations over the direct interband contributions.

Unusual plasmonic responses in phosphorene with topological transition: the interplay of strain and doping

In this paper, plasmonic responses of phosphorene in the presence of strain and doping have been systematically investigated. Based on density functional theory, permittivities include both the intraband and interband transitions of electrons have been calculated. Due to the modification of the band structure, significantly higher Drude plasma frequency has been observed along the zigzag direction, other than the armchair direction as in the usual case. The resulting unusual plasmonic responses change their anisotropy, both in the elliptic as well as the hyperbolic regimes. Based on our calculations, positive strain as large as 5% along the zigzag direction can even lead to so-called reversed hyperbolic plasmonic responses. The k-surfaces of the plasmonic modes in extended monolayer have been analytically solved, and it is found that actively switching the topology (between elliptic and hyperbolic regimes) of the plasmonic responses by changing the Fermi level is possible in phosphorene at certain frequencies. In the end, a simple model has been proposed to describe such plasmonic responses in the infrared and the parameters of the model have been listed in tables which can be used directly in calculating the permittivities. Our studies may extend the scope of existing investigations of phosphorene plasmons and lead to band engineering as a way to control plasmons in two-dimensional materials.