Integrated Circuit Technology Research Articles

Shaping society: The evolution and impact of silicon and steel technologies—Building the future: A comparative analysis of silicon and steel technologies

Abstract In the ever-changing technical world, this article compares the societal implications of two technological behemoths: silicon technology and steel technology. Silicon technology, best recognized for its role in integrated circuits and electronics, ushered in the digital age, revolutionizing the way people communicate, calculate, and conduct business. Steel technology, on the other hand, has formed the foundation of contemporary infrastructure and industries due to its strength and versatility. This research thoroughly investigates their economic, environmental, and social implications, providing light on their distinct and common contributions to society. It also looks into the astonishing history of silicon integrated circuit technology, tracking its route from Moore’s Law-driven aggressive growth to the current emphasis on energy efficiency and power consumption reduction. The paper’s investigation is critical in understanding the delicate interplay between innovation and social advancement, and it provides insights into technology’s transformational capacity. As we stand at the crossroads of these two technical domains, this research emphasizes the historical relevance of silicon and steel technologies, as well as their ability to shape our technological future. It enables readers to study the dynamic interplay between silicon and steel via a comparative perspective, exposing their revolutionary contributions and the intricate web of societal advancement they have woven throughout history.

A voltage-mode fully cascadable biquad with three CFOAs and grounded capacitors

In this paper, a new voltage-mode second-order multifunction filter with three current feedback operational amplifiers is developed. This circuit generates low-pass filter, band-pass filter (BPF), inverting-type BPF, notch filter, and all-pass filter (APF) responses with all gains. It has high input and low output impedances for all the filter responses. It also has the advantage of grounded two capacitors, which is essential for integrated circuit technology. It has orthogonally controllable features for all the filter responses except the APF one. However, one passive element matching condition is needed to obtain an APF response. Many simulations are carried out via the SPICE program, where 0.13 µm technology parameters are utilized. Furthermore, a few experiments are performed using the AD844s to see the performance of the developed filter in practice.

Photonic integrated interrogators for wearable fiber-optic sensing

Wearable technology, thanks to its substantial economic and social impact, has garnered widespread public attention. For a long time, the commercialization of wearable fiber-optic sensing has been limited by the cost and size of bulky optics-based optical interrogators, which serve to measure and analyze optical signals. This limitation can be addressed by introducing photonic integrated circuit (PIC) technology to develop optical interrogators, which can be referred to as photonic integrated interrogators. A gap exists between these two domains: fiber-optic sensing researchers lack familiarity with PICs, and conversely, PIC researchers may not be well-versed in fiber-optic sensing. The objective of this review is to bridge and minimize this knowledge gap. A brief summary of different sensing principles is provided. The recent progress and advantages of photonic integrated interrogators and their applications in wearable fiber-optic sensing systems are summarized herein. An overview of different strategies for photonic integrated interrogators including polarimetric, spectroscopic, and hybrid-measurement ones, is presented. We also introduce how light sources and photodetectors can be integrated with photonic integrated interrogators to achieve more compact, lower-cost devices. Moreover, the challenges of photonic integrated interrogators used in wearable fiber-optic sensing systems are briefly discussed and highlighted.

Simulation of 2D ReS2/WSe2 based complementary field-effect transistors towards 1 nm technology node

Advanced Integrated Circuit technology demands high-performance channel materials and innovative device architectures to sustain the scaling of field-effect transistors. In this study, we simulate the electrical performance of rhenium disulfide and tungsten diselenide nanosheet FETs (NSFETs) with gate lengths ranging from 12 nm to 8 nm using Technology Computer-Aided Design method. The simulated high performance including 393 μA/μm on-state current and over 105 on/off ratio can meet the criteria for integrated circuit applications in the 1 nm technology node. Complementary FET (CFET) simulations are conducted through the vertical stacking of ReS2 and WSe2 NSFETs, exhibiting a small parasitic capacitance of 1.0 fF/μm, and notable noise margin (>235 mV) at different process corners. The construction and performance simulation of Static Random-Access Memory (SRAM) is realized through CFET interconnection, involving the calculation of read current and read/write noise margin. This research offers a forward-looking analysis of performance metrics for future 2D materials-based NSFETs, CFETs, and SRAMs.

Lester Eastman and the Monolithic Microwave Integrated Circuit Technology [Speaker’s Corner

Lester Eastman and the Monolithic Microwave Integrated Circuit Technology [Speaker’s Corner

Cleaning mechanisms during post chemical mechanical polishing (CMP) using particle removal of surfactants via a citric acid-based solution

With the development of circuit integration technology, the requirements for defects in copper interconnects have become more stringent. The residual SiO2 particles on the copper surface can seriously affect circuit performance and require more efficient and thorough removal. This article investigates the effects of a novel cleaning solution composed of citric acid (CA), alkyl polysaccharide glycosides (APG1214), and dodecylbenzene sulfonic acid (LABSA), aimed at improving the removal efficiency of SiO2 and maintaining the integrity of copper surface. The optimal concentrations of APG1214 and LABSA were determined through contact angle and surface tension analysis. It was found that when APG1214 (2000 ppm) and LABSA (1000 ppm) were combined in a 3:2 vol ratio in CA solution (0.6 wt%), the highest particle removal efficiency (99.5 %) could be achieved while minimizing surface roughness. The results of scanning electron microscopy (SEM) and atomic force microscopy (AFM) confirmed these findings. Combining quantum chemical calculations, new insights into the mechanism of action of different components in clean solutions have been proposed: 1. Similar to CA, LABSA and APG1214 demonstrate a strong affinity for copper, synergistically facilitating the cleavage of Cu-Si bonds. 2. Alternating adsorption of LABSA and APG1214 on free silica particles prevents their re-adsorption onto copper surfaces. 3. Furthermore, their orderly adsorption on copper mitigates the corrosive chelation effect of CA, providing a protective mechanism. These findings are pivotal for the development of advanced, multifunctional cleaning solutions.

Advancements in Filter Technology: Evolution and Applications

This paper explores the historical trajectory and contemporary applications of signal processing filters. From the early days of analog filters to the current digital era, the paper traces their evolution, emphasizing key developments in active RC filters, monolithic integrated op amps, and the transition to switched-capacitor and continuous-time filters. Fundamentals of analog and digital filters are outlined, distinguishing their processing of continuous-time and discrete-time signals. The classification of filters, including low-pass, high-pass, band-pass, and band-stop, is discussed with insights into their specific applications. The paper delves into crucial applications in audio processing, video processing, communication systems, power management, and sensor signal processing, showcasing filters' pivotal role in enhancing signal quality across diverse fields. Addressing emerging technologies, the paper highlights adaptive and deep learning filters, projecting the future trends in filter technology. It anticipates developments in analog integrated filters, emphasizing the growing significance of integrated circuits technology. This comprehensive review aims to deepen readers' understanding and inspire continued innovation in signal processing.

Online nonparametric process monitoring for IoT systems using edge computing

Facilitated by modern sensing and integrated circuit technology, Internet of Things (IoT) systems now have the ability to intelligently and automatically collect data, perform computational tasks on an edge, and efficiently make decisions locally or remotely. However, existing multivariate statistical process control methods commonly assume that sensors directly transmit the raw measurements to the central server, and thus the edge computing capability of IoT systems is not effectively harnessed. To fill this literature gap, we propose a monitoring scheme tailored for IoT systems by leveraging their edge computational power. In particular, inspired by the inherent hierarchical structure of the IoT system, we construct the monitoring statistics hierarchically. At each edge device, we first construct a nonparametric stream-level statistic for each data stream and aggregate them to derive the device-level statistics. To eliminate the inconsistency in device-level statistics across different edge devices, the device-level statistics are transformed into time-related statistics, which are then sent to the central server. At the central server, a system-level monitoring statistic is constructed, and the most informative edge devices that should transmit statistics are intelligently determined. Theoretical analyses are carried out to justify the effectiveness of the data transmission strategy. Both simulations and a case study, which is based on an IoT system we built, are conducted to evaluate the performance and validate the superiority of the proposed monitoring scheme.

Wide Voltage Swing Potentiostat with Dynamic Analog Ground to Expand Electrochemical Potential Windows in Integrated Microsystems.

Electrochemical measurements are vital to a wide range of applications such as air quality monitoring, biological testing, food industry, and more. Integrated circuits have been used to implement miniaturized and low-power electrochemical potentiostats that are suitable for wearable devices. However, employing modern integrated circuit technologies with low supply voltage precludes the utilization of electrochemical reactions that require a higher potential window. In this paper, we present a novel circuit architecture that utilizes dynamic voltage at the working electrode of an electrochemical cell to effectively enhance the supported voltage range compared to traditional designs, increasing the cell voltage range by 46% and 88% for positive and negative cell voltages, respectively. In return, this facilitates a wider range of bias voltages in an electrochemical cell, and, therefore, opens integrated microsystems to a broader class of electrochemical reactions. The circuit was implemented in 180 nm technology and consumes 2.047 mW of power. It supports a bias potential range of 1.1 V to -2.12 V and cell potential range of 2.41 V to -3.11 V that is nearly double the range in conventional designs.

Impact of integrated circuit technology on products

Impact of integrated circuit technology on products

Integrated GaN Prism Array Self‐Powered Photodetector on Si for Ultraviolet Imaging and Communication

AbstractTo realize the advantageous combination of microelectronic integrated circuit technology and photonic technology, the development of high‐speed, low‐power, and chip‐integrated photodetection devices is extremely critical. Here, a large‐scale on‐chip integration photodetector array on a Si wafer consisting of 21×21 GaN p‐n homojunction pixels is prepared. The GaN homojunction subunit has significant photovoltaic performance at a bias voltage of 0 V, including high responsivity of 229.5 mA W−1, outstanding specific detectivity of 2.46×1013 Jones (360 nm, 45.7 µW cm−2), and fast response speed of 240/290 µs. Especially, external quantum efficiency can reach 94% in the faint UV illumination at 0 V bias. The excellent photoresponse is confirmed by finite element analysis, which is resulted from an oversized built‐in potential at the p‐n homojunction interface. For exploring potential practical applicability of the device, the full range of active pixels is statistically analyzed. It is confirmed that the small relative deviation of the GaN array is extremely favorable for obtaining high‐resolution imaging capability. Moreover, the prepared device can be used as an optical data receiver for UV optical communication. With compatibility and integrability to Si‐based optoelectronics platforms, the devices are appealing for sensing, imaging and communications.

NV color center fluorescence signal measurement based on FPGA architecture

Nitrogen-vacancy (NV) quantum defects in diamond are sensitive detectors of magnetic fields. Then, the existing sensing technologies based on diamond NV centers rely on bulky and expensive instruments, which must be replaced by a more compact design. Here we combine NV quantum sensing technology with integrated circuit technology to create a compact and easy-to-operate platform. Using the existing integrated circuit technology, we integrate the lock-in amplifier, microwave generator and TTL modulator together. with this platform, we can obtain a magnetic sensitivity of 5.72μT/Hz 1/2.

Exploring the significance and applications of Field Programmable Gate Arrays in modern integrated circuits

In recent years, the rapid advancement of electronic technology and large-scale integrated circuit technology has led to increased integration of integrated circuits and expanding system scales on integrated motherboards. This evolution presents new challenges and demands in system design. Field Programmable Gate Arrays (FPGAs), a vital VLSI technology, have found extensive applications in communication, image processing, computers, and other domains, becoming a pivotal component of contemporary electronic systems. This paper aims to enhance the understanding of FPGAs by first delving into their theoretical foundations, followed by an overview of their general structural elements and a historical perspective on FPGA development. Additionally, this analyse and summarize relevant literature in the third section, focusing on the three primary application areas of FPGAs, elucidating their research processes and findings. Finally, the fourth section offers insights into the future directions of FPGA development, grounded in the current context. By acquainting readers with FPGAs essential attributes and its multifaceted applications, this paper underscores the pivotal role of FPGAs in the landscape of modern integrated circuits.

Carbon nanotube integrated circuit technology: purification, assembly and integration

Abstract As the manufacturing process of silicon-based integrated circuits (ICs) approaches its physical limit, the quantum effect of silicon-based field-effect transistors (FETs) has become increasingly evident. And the burgeoning carbon-based semiconductor technology has become one of the most disruptive technologies in the post-Moore era. As one-dimensional nanomaterials, carbon nanotubes (CNTs) are far superior to silicon at the same technology nodes of FETs because of their excellent electrical transport and scaling properties, rendering them the most competitive material in the next-generation ICs technology. However, certain challenges impede the industrialization of CNTs, particularly in terms of material preparation, which significantly hinders the development of CNT-based ICs. Focusing on CNT-based ICs technology, this review summarizes its main technical status, development trends, existing challenges, and future development directions.

Low-power, agile electro-optic frequency comb spectrometer for integrated sensors.

Sensing platforms based upon photonic integrated circuits have shown considerable promise; however, they require corresponding advancements in integrated optical readout technologies. Here, we present an on-chip spectrometer that leverages an integrated thin-film lithium niobate modulator to produce a frequency-agile electro-optic frequency comb for interrogating chip-scale temperature and acceleration sensors. The chirped comb process allows for ultralow radiofrequency drive voltages, which are as much as seven orders of magnitude less than the lowest found in the literature and are generated using a chip-scale, microcontroller-driven direct digital synthesizer. The on-chip comb spectrometer is able to simultaneously interrogate both an on-chip temperature sensor and an off-chip, microfabricated optomechanical accelerometer with cutting-edge sensitivities of ≈5µK⋅Hz−1/2 and ≈130µm⋅s−2⋅Hz−1/2, respectively. This platform is compatible with a broad range of existing photonic integrated circuit technologies, where its combination of frequency agility and ultralow radiofrequency power requirements are expected to have applications in fields such as quantum science and optical computing.

Microscopy of terahertz spoof surface plasmons propagating on planar metamaterial waveguides

Surface plasmon polaritons (SPPs) are electromagnetic waves that have attracted significant interest owing to their subwavelength confinement and the strong field enhancement that they provide. Yet in the terahertz (THz) frequency region of the spectrum, which is well below the plasma frequency of metals, these surface waves are characterized by extremely weak confinement that has severely limited their exploitation for information processing and sensing. One means to circumvent this limitation is through subwavelength structuring of a metallic surface, which can thereby be engineered to support the propagation of spoof surface plasmon polaritons (SSPPs) that closely mimic the properties of SPPs. In this work, we report the design and experimental characterization of an ultra-thin metamaterial planar waveguide that supports SSPPs at THz frequencies. Finite-element method simulations are shown to predict the excitation of SSPPs on the surface of our devices under free-space illumination at 3.45 THz. We investigate these structures experimentally using THz scattering-type scanning near-field microscopy (THz-s-SNOM) to map directly the out-of-plane electric field associated with the propagation of SSPPs on the surface of the waveguides. Our work paves the way for the future development of plasmonic integrated circuit technologies and components operating in the THz frequency band.

Performance Evaluation of the uMI Panorama PET/CT System in Accordance with the National Electrical Manufacturers Association NU 2-2018 Standard.

The uMI Panorama is a novel PET/CT system using silicon photomultiplier and application-specific integrated circuit technologies and providing exceptional spatial and time-of-flight (TOF) resolutions. The objective of this study was to assess the physical performance of the uMI Panorama in accordance with the National Electrical Manufacturers Association (NEMA) NU 2-2018 standard. Methods: Spatial resolution, sensitivity, count rate performance, accuracy, image quality, and TOF resolution were evaluated in accordance with the guidelines outlined in the NEMA NU 2-2018 standard. Energy resolution was determined using the same dataset acquired for the count rate performance evaluation. Images from a Hoffman brain phantom, a mini-Derenzo phantom, and 3 patient studies were evaluated to demonstrate system performance. Results: The transaxial spatial resolution at full width at half maximum was measured as 2.88 mm with a 1-cm offset from the center axial field of view. The sensitivity at the center axial field of view was 20.1 kcps/MBq. At an activity concentration of 73.0 kBq/mL, the peak noise-equivalent count rate (NECR) reached 576 kcps with a scatter fraction of approximately 33.2%. For activity concentrations at or below the peak NECR, the maximum relative count rate error among all slices remained consistently below 3%. When assessed using the NEMA image quality phantom, overall image contrast recovery ranged from 63.2% to 88.4%, whereas background variability ranged from 4.2% to 1.1%. TOF resolution was 189 ps at 5.3 kBq/mL and was consistently lower than 200 ps for activity concentrations at or below the peak NECR. The patient studies demonstrated that scans at 2 min/bed produced images characterized by low noise and high contrast. Clear delineation of nuclei, spinal cords, and other substructures of the brain was observed in the brain PET images. Conclusion: uMI Panorama, the world's first commercial PET system with sub-200-ps TOF resolution, demonstrated fine spatial and fast TOF resolutions, robust count rate performance, and high quantification accuracy across a wide range of activity levels. This advanced technology offers enhanced diagnostic capability for detecting small and low-contrast lesions while showing promising potential under high-count-rate imaging scenarios.

Quantum Computing and Machine Learning on an Integrated Photonics Platform

Integrated photonic chips leverage the recent developments in integrated circuit technology, along with the control and manipulation of light signals, to realize the integration of multiple optical components onto a single chip. By exploiting the power of light, integrated photonic chips offer numerous advantages over traditional optical and electronic systems, including miniaturization, high-speed data processing and improved energy efficiency. In this review, we survey the current status of quantum computation, optical neural networks and the realization of some algorithms on integrated optical chips.

Analyzing correlation with BER: Constellation diagrams across various modulation modes and FDM/OFDM

Over the last two decades, owing to rapid advancements in digital signal processing and integrated circuit technology, Frequency Division Multiplexing (FDM) and Orthogonal Frequency Division Multiplexing (OFDM) have emerged as pivotal technologies for wireless multimedia communication. Research reveals that coupling OFDM with diverse modulation modes aids in mitigating the Bit Error Rate (BER) during transmission. Nonetheless, a comprehensive elucidation remains absent regarding the interplay between constellation diagrams and BER, as well as the correlation between FDM and BER. Thus, the primary focus of this research is to dissect the correlation between BER and constellation diagrams for distinct modulation methodologies, while also scrutinizing the impact of FDM on BER. The research methodology adopted herein entails two main steps: First, gathering papers pertinent to constellation diagrams, BER, FDM, and OFDM technology. Second, leveraging survey and literature analysis methodologies for thorough examination. The findings highlight that diverse constellation diagram designs yield disparate BER outcomes post demodulation. Foremost among the influential factors on FDM and OFDM technology BER are distinct Inter-Carrier Interference (ICI) patterns and the quantity of subcarriers stemming from signal wave side lobes. To address the BER challenge, a prospective avenue involves refining the selection of constellation diagram styles for demodulation, leveraging an understanding of constellation diagram traits. Furthermore, future research endeavors should delve deeply into co-channel interference and adjacent channel interference to contribute effectively towards BER reduction and augmenting channel reliability.

A 5G beam-steering microstrip array antenna using both-sided microwave integrated circuit technology

In this paper a beam steering 2×2 microstrip array antenna is proposed and simulated for the 5G sub-6 GHz frequency band. The array antenna is designed at the resonant frequency of 3.5 GHz. The antenna has four patches excited by two microstrip lines. Microstrip lines on top of teflon substrate of 0.8 mm height and slot line in the ground plane makes a hybrid junction. The design uses both sided microwave integrated circuit (MIC) to feed signal to the patch elements. This designed array antenna has the beam steering capability of maximum -17º to +17º while keeping the side lobe gain below 10 dB. The simulation results show that the array antenna is designed through good input impedance matching. The antenna has a return loss of -43 dB at center frequency 3.5 GHz. The results also show that the array antenna has a high gain of 12.57 dBi and directivity of 25.11 dB. The maximum gain of this antenna is 24.1 dB at -17º and +17º. The proposed work is simulated on keysight technologies advanced designed system (ADS).