Insulated Gate Bipolar Translator Research Articles

A Unified Open-Circuit-Fault Diagnosis Method for Three-Level Neutral-Point-Clamped Power Converters

Fast and accurate fault diagnosis is important to enhance the reliability of power converters. Since both open-circuit faults in insulated gate bipolar translator (IGBTs) and diodes deteriorate power quality, diagnosis methods only focusing on IGBT failures are easily disturbed by diode failures. In this work, we propose a unified effective residual-based open-circuit fault diagnosis method for <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">all</i> semiconductor devices including IGBTs, clamping diodes, and freewheeling diodes in three-level neutral-point-clamped power converters. The voltage and current residuals are calculated from the mismatches between the actual current path and the estimated one, requiring <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">solely</i> the already existing current measurement of the system. By analyzing the variation of the voltage and current residuals in all open-circuit failure cases, the proposed diagnosis method can locate the faulty switch within several sampling periods, i.e., less than 1 ms. Finally, the proposed diagnosis method is incorporated in the model predictive current control framework. <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Both</i> experimental <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">and</i> hardware-in-the-loop results confirm the effectiveness and robustness of the proposed diagnosis method at various operation scenarios.

Optimised temperature fluctuation control strategy for lifetime improvement in aircraft electrical power distribution system

As a power electronic converter with bidirectional energy transmission, the Dual Active Bridge (DAB) has a broad application prospect in the electrical power distribution system of hybrid-electric flight. For the DAB application in the electrical power distribution system, high efficiency and high reliability are envisaged due to the mission-critical nature of the application. A new pulse width modulation optimization control strategy is proposed, which is based on the feedback temperature fluctuations of the GaN (Gallium Nitride) power transistors, to improve the lifetime of the whole circuit. The complete topology and simulations of the DAB converter are carried out in PLECS. Detailed simulation results manifest the precise lifetime of the GaN power transistors and verify the accuracy of the new optimization control strategy. Meanwhile, Insulated Gate Bipolar Translator is set as a control group to compare the lifetime of conventional silicon-based power devices with the GaN power transistor. Hardware In Loop platform test is built to further validate the proposed method.

A 380 V/50 kVar SiC-SVG Achieving a Power Density of 1.652 kVar/L With the Optimization of Heatsink and Output Filter Volume

With the rapid development of new energy vehicles, 5G facilities, electric aircraft, and new energy power generation, the high-power-density inverters are developed rapidly. A comprehensive optimization method combining heatsink and inductance filter was proposed in this article. Based on accurate thermal modeling and magnetic modeling, the method proposed chose an optimized switching frequency to minimize the volume of the inverters by compromising the design of the heatsink and inductor volume. Among them, a model of multichip forced air-cooling heatsink was proposed to reduce the size of the heatsink, and the comprehensive thermal resistance error of the proposed model is within 2%. The structure of the grid-connected filter and the inductor model is analyzed showing that the single inductor L-filter has a smaller size and more stability than the LCL-filter at a high switching frequency. The comprehensive optimization method proposed was implemented by 380-V/50-kVar SiC-static var generator (SVG) with the 50-kHz switching frequency, and its topology is a two-level inverter with a single inductor filter. This SiC-SVG reached a volume of 30.2 L (including all components required for mainstream products), which is 50% lower than insulated gate bipolar translator (IGBT)-SVGs. Its efficiency is 98.5% at full load, which is 1.5% higher than IGBT-SVGs. The experiments and temperature rising tests at full load proved the feasibility of the comprehensive optimization method.

Single-Phase Voltage Source Multi-Level Inverter Hysteresis SVPWM Reconfigurable Fault-Tolerant Control Method

A hysteresis space vector pulse width modulation (SVPWM) reconfigurable fault-tolerant method for single-phase voltage source multi-level inverter with current tracking is proposed. Firstly, the influence of single switch open circuit fault and double switches open circuit fault on the voltage vector of the inverter is analyzed, and on this basis, the equivalent replacement of the voltage vector is obtained by using the topology reconstruction of the inverter, and the redundant voltage vectors with overlapping positions are preferred for equivalent replacement. If there are no coincident non-fault vectors, the other non-fault vectors with the closest position and effect are selected. The fault-tolerant method does not need the switching operation between the main power switching device and spare power switching device of the inverter, and can directly control the on–off process of the inverter reconfiguration unit through the driving signal of insulated gate bipolar translator (IGBT), which is simple and stable. Under the conditions of single switch open circuit and most double switches open circuit, the output current of the inverter can accurately track the reference current.

On the Junction Temperature Extraction Approach With a Hybrid Model of Voltage-Rise Time and Voltage-Rise Loss

Temperature sensitive electrical parameter (TSEP) approaches are widely employed in the junction temperature ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$T_{j}$ </tex-math></inline-formula> ) detection and prediction of power devices, especially the switching parameter. In this article, the voltage-rise time and its loss during the turn-off process are used as the TSEP index for the detection of junction temperature because of the coupling relationship with the maximum junction temperature. In addition, the effect of junction temperature on the current-fall time and its loss is compared. The theoretical analysis is verified by SABER simulation and H-bridge inverter circuit platform. It is established that the model based on voltage-rise time ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$t_{\mathrm {rv}}$ </tex-math></inline-formula> ) and voltage-rise loss ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$E_{\mathrm {rv}}$ </tex-math></inline-formula> ) is a viable model with good linearity, fixed sensitivity, and offers nondestructive insulated gate bipolar translator (IGBT) junction temperature extraction.

Research on the Gate Oxide Layer Aging Trend of Power Electronic Device

The introduction of fully electric vehicles (FEVs) into the mainstream has raised concerns about the reliability of their electronic components such as Insulated Gate Bipolar Translator (IGBT). At present, only the transient thermal resistance curve in the datasheet and the initial thermal model of the experimental test are used to evaluate the life of the IGBT module, while it is well known that IGBT parameters are affected by its degree of aging. Thus, the development of research for the aging process of IGBT is of key importance. The aging process of IGBT is proposed to be a gradual aging process, verified by the accelerated aging experiment. Firstly, the mechanism between the relevant aging parameters and the degree of IGBT aging is studied in this paper. Secondly, the switching parameters in different degrees of aging are measured and compared by accelerated experiments. Finally, the stepwise linear regression algorithm is used to screen parameters and the Mann-Kendall test method is used to analyze the IGBT aging process curve. The results show that the aging process of IGBT is gradual, and the aging process model of IGBT is finally established. On this basis, the remaining using life of IGBT can be accurately measured.

Fault-Tolerant Inverter Operation Based on Si/SiC Hybrid Switches

The silicon (Si)/silicon carbide (SiC) hybrid switch comprising a Si insulated gate bipolar translator (IGBT) and a SiC metal-oxide-semiconductor field effect transistor (MOSFET) in parallel offers not only excellent performance and cost tradeoff but also inherent switch-level redundancy for potential power converter fault-tolerant operation. It is possible to operate the power converter even when either the SiC MOSFET or the Si IGBT experiences an open-circuit fault. This article first analyzes various switch failure scenarios and then proposes a novel fault-tolerant control strategy for a single-phase inverter based on the Si/SiC hybrid switches to mitigate a single-point switch failure and maintain inverter operation. Experimental results validate the effectiveness of the proposed fault-tolerant control strategy.

A Power Electronic Traction Transformer Configuration With Low-Voltage IGBTs for Onboard Traction Application

Solid-State transformer for onboard traction application is also addressed as power electronic traction transformer (PETT), which is used to replace the line frequency traction transformer and four-quadrant converter to further improve efficiency, save installation space, and reduce weight of the onboard equipment. However, based on the conventional PETT configuration with the modular series–parallel structure, it is hard to guarantee the high efficiency and high power density at the same time due to the limitations caused by the switching characteristics of the semiconductor devices, transformer design, and high-voltage insulation design. To deal with the mentioned problem, a PETT configuration and the parameters’ design method for onboard traction application are proposed in this paper to replace the conventional dc/dc stage with the low-voltage insulated gate bipolar translator (IGBTs). By using the proposed configuration, the high-voltage IGBTs can be replaced by the low-voltage IGBTs, which can help reduce switching loss. Meanwhile, zero-current switching or zero-voltage switching for all the IGBTs can be guaranteed, and the number of the medium-frequency transformers (MFTs) will not increase. Therefore, a multiple optimization of PETT, including switching losses, the number of MFTs and switches, and costs, can be finally achieved. Finally, an experimental prototype is built to verify the performance of the proposed PETT configuration.

Suppression effectiveness research on multi-level EMI filter in thermal electromagnetic interactive filed of explosion-proof three-level NPC converter

As a system, the explosion-proof three-level NPC (Neutral-Point-Clamped) converter has the characteristics of nonlinear, high complexity, and multiple thermal electromagnetic fields, among which multiple magnetic fields interfere with each other and affect the system stability. In order to solve this problem, the conducted electromagnetic interference principle was analyzed in the converter filed firstly in this paper, and transmission paths were illustrated as well. Secondly, on the basis of IGBT (Insulated Gate Bipolar Translator) transient state analysis, the EMI (Electro-Magnetic Interference) mechanism analysis of three-level converter power devices was completed for EMI filter design. Finally, a novel multi-level EMI filter was designed to weaken mutual interference of small magnetic field group in the system and to solve the EMI suppression problem of inner cavity interaction of explosion-proof three-level NPC converter. The research target is to optimize the filter and enhance the system ability of resistance to thermal and electromagnetic interference. The suppression effectiveness of multi-level EMI filter was proved by the experiment conducted on a 1 MW (Million Watt) explosion-proof three-level NPC converter platform.

Entry-Prohibited Effect of kHz Pulsed Magnetic Field Upon Interaction Between SPIO Nanoparticles and Mesenchymal Stem Cells

The interaction between superparamagnetic iron oxide (SPIO) nanoparticles and mesenchymal stem cells (MSCs) in the presence of pulsed magnetic field (PMF) has become an important area of research in recent years. A parameter-adjustable pulsed magnetic field was developed based on the principle of insulated gate bipolar translator transistor-controlled discharge of large capacitances. The internalizations of SPIO nanoparticles by MSCs were investigated under the treatment of PMF in both intermittent stimulation mode and continuous stimulation mode. The intensities and frequencies of pulsed magnetic field can be adjustable in the range of 1.9-4.6mT and 3-5 kHz, respectively. This PMF was safe to the MSCs. However, the uptake of SPIO nanoparticles by MSCs was significantly prohibited under the treatment of kHz-ranged PMF while the 10Hz PMF enhanced the cellular uptake of nanoparticles. This phenomenon was relative with the magnetic effect of the PMF with different frequency. The PMF can be used to effectively regulate the cellular uptake of SPIO nanoparticles and the mechanism lies in the magnetic effect. The interaction between SPIO nanoparticles and the MSCs is a fundamental and important issue for nanomedicine and stem cell research. Our results demonstrate that the external magnetic field can be used to regulate their interaction. We believe that this safe, facile, and flexible method will greatly promote the development and clinical translation of regenerative medicine and nanomedicine.

Fault Detection and Location of IGBT Short-Circuit Failure in Modular Multilevel Converters

A single fault detection and location for Modular Multilevel Converter (MMC) is of great significance, as numbers of sub-modules (SMs) in MMC are connected in series. In this paper, a novel fault detection and location method is proposed for MMC in terms of the Insulated Gate Bipolar Translator (IGBT) short-circuit failure in SM. The characteristics of IGBT short-circuit failures are analyzed, based on which a Differential Comparison Low-Voltage Detection Method (DCLVDM) is proposed to detect the short-circuit fault. Lastly, the faulty IGBT is located based on the capacitor voltage of the faulty SM by Continuous Wavelet Transform (CWT). Simulations have been done in the simulation software PSCAD/EMTDC and the results confirm the validity and reliability of the proposed method.

A micro-CL system and its applications.

The computed laminography (CL) method is preferable to computed tomography for the non-destructive testing of plate-like objects. A micro-CL system is developed for three-dimensional imaging of plate-like objects. The details of the micro-CL system are described, including the system architecture, scanning modes, and reconstruction algorithm. The experiment results of plate-like fossils, insulated gate bipolar translator module, ball grid array packaging, and printed circuit board are also presented to demonstrate micro-CL's ability for 3D imaging of flat specimens and universal applicability in various fields.

Partial Stray Inductance Modeling and Measuring of Asymmetrical Parallel Branches on the Bus-Bar of Electric Vehicles

In order to increase the power rating of electric vehicles, insulated gate bipolar translator (IGBT) modules with multiple power terminals are usually adopted. The transient current sharing of the same polarity power terminals is related to the stray inductance in the branches of the bus-bar. Based on the laminated bus-bar of a three-phase inverter in the electric vehicles that consists of asymmetrical parallel branches, this paper investigates the transient current imbalance sharing caused by the asymmetrical stray inductance in the parallel branches of the bus-bar from the view of energy storing and releasing of stray inductance for the first time. Besides, the partial self-inductance and mutual-inductance model of the parallel branches is set up. Finally, a high-precision partial stray inductance measurement method is proposed, and the accuracy of the partial stray inductance model for asymmetrical parallel branches is verified by experimental tests.

Current similarity based open-circuit fault diagnosis for induction motor drives with discrete wavelet transform

Three-phase voltage-source inverters fed induction motor with space-vector controlled scheme are widely used in industrial applications. The suffered failures will degrade the system performance with output torque ripple and harmonic currents. In this paper, a novel diagnosis method is proposed to detect and locate the insulated gate bipolar translator open-circuit fault. Discrete wavelet transform is used as a pre-treatment technique for three-phase output currents, the approximate coefficients are applied to obtain energy vectors. Euclidean distance between every two of the energy vectors are calculated for measuring the current similarity to diagnose fault. When IGBTs occur open-circuit fault, the values of Euclidean distance will be smaller than that under normal conditions, then faults can be detected. Faults can also be located according to extracted features. Simulation and experimental results show high efficiency and merits of the proposed method.

Protection of the MMCs of HVDC Transmission Systems against DC Short-Circuit Faults

This paper deals with the blocking of DC-fault current during DC cable short-circuit conditions in HVDC (High-Voltage DC) transmission systems utilizing Modular Multilevel Converters (MMCs), where a new SubModule (SM) topology circuit for the MMC is proposed. In this SM circuit, an additional Insulated-Gate Bipolar Translator (IGBT) is required to be connected at the output terminal of a conventional SM with a half-bridge structure, hereafter referred to as HBSM, where the anti-parallel diodes of additional IGBTs are used to block current from the grid to the DC-link side. Compared with the existing MMCs based on full-bridge (FB) SMs, the hybrid topologies of HBSM and FBSM, and the clamp-double SMs, the proposed topology offers a lower cost and lower power loss while the fault current blocking capability in the DC short-circuit conditions is still provided. The effectiveness of the proposed topology has been validated by simulation results obtained from a 300-kV 300-MW HVDC transmission system and experimental results from a down-scaled HVDC system in the laboratory.

Study on Network Remote Controlling Huge-Power Chopping Cascade Speed Regulation System Based on State-Space Averaging Model

This paper deals with the modeling of DC-DC boost chopping circuit in a huge-power chopping cascade speed regulation system while the motor power level is over 1 megawatt. The model involves the Insulated Gate Bipolar Translator(IGBT) & Free-Wheel Diode(FWD) based on a state-space averaging method. It solves the problems of thedesigning of a control system in the chopping cascade speed regulation system when the controlling motor has a huge power. The system can be remote controlled through the industrial field network, and it has a good interface of human-computer interaction.The experiments show that the dual closed-loop control system is reliable and stable, it also has the better steady-state and dynamic characteristics and higher power factor compared with traditional cascade speed regulation systems. Based on this dual closed-loop control system, several devices with remarkable energy-saving effect have been running very well in the industrial sites.