Compound InSb Research Articles

Synthesis of stoichiometric InSb thin films by a simple molecular-beam technique

In-Sb alloy films, deposited by a two-source molecular-beam technique at substrate temperatures from 500 to 700 K in ultrahigh vacuum, have been examined by Auger electron spectroscopy. The compositional analysis shows that incident atoms of In and Sb react promptly to stabilize as the compound InSb. The stoichiometry of the deposits is disturbed when the surface is saturated with the residual free atoms. The stoichiometric InSb films can be deposited under the beam-intensity condition that JIn<JSb<JIn+n,n (T) =1.6×1029 exp(−2.3×104/T) atoms/cm2 s, where n corresponds to the critical beam intensity for the condensation of antimony.

The InSb on a piezoelectric Rayleigh wave amplifier

Results taken from monolithic acoustic surface-wave amplifiers which employ the interaction between carriers drifting in a semiconductor film and electric fields accompanying a Rayleigh wave propagating on a piezoelectric substrate are described. The experimental devices were fabricated in vacuum by flash evaporation of a InSb compound onto heated substrates of LiNbO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> or Bi <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</inf> GeO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">20</inf> . Theoretical and experimental amplifier results are presented for several different pulsed operating monolithic devices. The results include measurements of electronic and terminal gain, saturation power, and noise figure as a function of bias voltage, and gain and phase dispersion as a function of frequency. Results are also given for a two film device which uses field effect to alter the conductivity of the amplifier film. Results from continuously operating samples fabricated by etching the semiconductor to a strip 25 µm in width are summarized.

Lattice dynamics of II–VI, III–V compounds

The lattice vibrations of II–VI compound ZnSe and III–V compound InSb have been calculated in the frame work of Banerjee-Varshni's second neighbour ionic [SNI] model utilizing critical-point phonons as an input to determine the required seven parameters and the experimentally determined three elastic constants C 11, C 12, C 44 as restraints on the values of the parameters. A reinvestigation of the experimental elastic constants particularly C 11 and C 44 for ZnSe has been suggested. Results are presented for the dispersion curves along high symmetry directions. A reasonable agreement with the recently measured inelastic nutron scattering data is observed.

Optical properties of amorphous III–V compounds. I. Experiment

AbstractFrom reflectivity measurements ε1 and ε2, the real and imaginary part of the dielectric constant, of the amorphous III‐V compounds InSb, InAs, InP, GaSb, GaAs, and GaP are determined in the fundamental absorption region up to 12 eV. Compared with the corresponding curves of the crystals, the spectra of the disordered materials are smeared out and shifted to lower energy. This shift leads to an increase of ε1(0). In the energy region of the E2‐peaks a selective decrease of ε2 is observed. The results for ε2 are briefly discussed in terms of structural properties, and a modified Penn model is applied to the spectral dependence of ε2.

Zur Theorie der Auger-Prozesse in III — V-Halbleitern

Abstract This paper presents a calculation of the lifetimes of excess electrons in the III -V compounds InSb, InAs and GaSb, assuming the Auger effect between bands. Following the theory of Beattie and Landsberg matrix elements are calculated by using approximate wave functions instead of Bloch functions. The ninefold integration of the transition probability can be reduced to a four-fold one which then is numerically calculated with the aid of a computer. The results are compared with the lifetimes of radiative transitions. It is shown that the Auger processes are dominant in small gap semiconductors, but not in semiconductors with larger gaps (more than about 0.5 eV).

Etude du mode de diffusion des electrons dans GaSb ET GaSbInSb

The values of 〈 T 2〉 / 〈 T〉 2 which we obtained for electrons in GaSb, and GaSbInSb compounds with low InSb concentration, enable us to propose a low of dependence of τ with energy taking into account the second energy minimum in the conduction band.

Magnetoresistance of InSb at a Microwave Frequency

The paper describes the measurement of magnetoresistance in the semiconducting compound InSb at a frequency of 10 Gc/sec. The microwave value of |dR/μdH|H0 is the same order of magnitude as the dc value.

Oscillators by Means of Magnetoresistance Effect

This paper describes the application of the magnetoresistance effect to oscillators using the high mobility semiconducting compound InSb as the active element. The first stable oscillator consisted of an InSb Corbino disk in a ferrite pot core reduced to a temperature of -40°C. The frequency was 210 cps and the open-circuited ac voltage was 540 mv, peak to peak. In order to construct a stable oscillator at room temperature, the shape of the semiconductor specimen was modified to a rectangular form composed of narrow strips of InSb joined together with metallic indium. This specimen has a comparatively higher internal resistance and a more pronounced magnetoresistance effect at low magnetic flux densities. A second oscillator using this specimen as an active element in an E-form ferrite core was tested and found to operate stably at a temperature of 25°C, in a frequency range from a few cps up to 300 cps. The maximum output power available was 2.5 mw, at 70 cps. There is no heating-up time required by the oscillator and the oscillation can start immediately under certain initial conditions. The elimination of the equipment to provide the low temperature, i.e., below 0° C for the oscillator has shown that the magnetoresistance effect can be made good use of in electronic devices without requiring a complicated circuit arrangement.

Significance of Crystallographic Polarity in the Fabrication of Junctions in InSb

The effect of {111} polarity in the fabrication of alloyed p-n junctions in InSb was investigated. The fabrication procedure also considers other polarity dependent effects found in III–V compounds. the results of this investigation suggest use of the {1̄1̄1̄} surface over the {111} for obtaining planar, lower reverse current, higher and sharper breakdown junctions. The implication of this study, using the exemplary III–V compound InSb, is that in the use of III–V compounds for the fabrication of p-n junction devices, one must regard a concept, polarity, heretofore not embraced in the manufacture of devices made of Ge and Si.

Band Structure and Transport Properties of Some 3–5 Compounds

The experimental information relevant to the band structure of the compounds InSb, InAs, GaSb, GaAs, GaP, AlSb and some of their alloys is synthesized and interpreted in terms of a consistent theoretical picture which exploits the close relationship linking the band structures of the group 4 and 3–5 semiconductors. It is shown that the momentum matrix element determining the conduction band masses in those compounds whose edge is of symmetry type Γ1, is nearly constant. Simple theoretical expressions, agreeing well with experiment, are derived for the corresponding effective masses and valence band spin-orbit splittings, following Kane's theory for InSb. The dominant scattering mechanisms determining the transport properties are reviewed briefly. Arguments are presented which show deformation potential scattering to be unimportant relative to polar optical mode scattering. A heuristic treatment indicates that the relaxation time approximation can be applied reasonably to polar scattering for temperatures T&amp;gt;ℏωl/K, where ωl is the longitudinal optical frequency. Multiband transport effects are discussed with special reference to the Nernst effect in GaAs and the electron mobility in GaSb. An explanation of the high-temperature behavior of the Nernst coefficient in GaAs in terms of polar and intervalley scattering is proposed. The mobility in GaSb remains unexplained.

A Reliable Method for the Production of High Purity Indium Antimonide†

ABSTRACT Principles described previously have been applied to the production of the semiconducting compound InSb, conveniently and reliably, with uncompensated donor densities of about 1014/cm2. Details of the apparatus and method are given, and the factors limiting the purity to this level are considered.

On the thermodynamic properties of the III–V compounds InSb, GaSb, and InAs

The heats of formation of the III–V compounds InSb, GaSb, and InAs at 0°C were measured by tin solution calorimetry. The heats of fusion of InSb and GaSb were measured by quantitative thermal analysis. From these measurements and published phase diagrams the excess free energies of the liquid phases in the systems In-Sb and Ga-Sb and the free energies of formation of InSb and GaSb were calculated by a method due to Wagner.

Self-diffusion in indium antimonide and gallium antimonide

Self-diffusion measurements have been made in the semi-conducting interrnetallic compounds InSb and GaSb. The material was single crystal or slightly polycrystalline. A tracer technique was used, in which layer's were removed from the crystal progressively and the residual activity in the crystal was counted after each section was taken. A hold-up on the surface of most of the radioactive tracer and the small magnitude of the diffusion coefficients limits the precision of the measurements and the temperature range over which they can be made with reasonable annealing times (a range of 40°C was used for both compounds). The data yield different diffusion coefficients for the group III atoms and the group V atoms in both compounds. The following values of D 0 and Q are obtained: D 9 (cm 2/sec) Q (kcal/mole) InSb In 0.05 41.8 Sb 0.05 44.6 GaSb Ga 3.2 × 10 3 72.6 Sb 3.4 × 10 4 79.4 The results allow the elimination of the following as possible mechanisms of self-diffusion in InSb and GaSb: 1. (a) direct interchange with nearest neighbors, 2. (b) a ring mechanism with equal numbers of group III and group V atoms in the ring, 3. (c) a vacancy mechanism with movements to vacancies in nearestneighbor positions only, 4. (d) interstitial diffusion in which the diffusing atoms always remain in interstitial positions or displace other atoms into an interstitial position if they re-enter the lattice. A reasonable mechanism for self-diffusion which accounts for the data in a consistent manner is vacancy diffusion in each of the face-centered cubic sublattices formed by the two constituents of InSb and GaSb. The product of grain-boundary width and grain-boundary diffusion coefficient in InSb was found to be 3.8 × 10 −16 cm 3 sec at 502°C. Diffusion of antimony in isolated dislocations in GaSb has been observed at temperatures near 700°C, with a product of diffusion coefficient and square of the dislocation radius between 10 −21 and 10 −22 cm 4/sec.

A Note on the Semiconducting Compound InSb

A Note on the Semiconducting Compound InSb