InP MIS Structures Research Articles

Determining the Hydrogen Concentration from the Photovoltage of Pd–Oxide–InP MIS Structures

The photovoltage of a metal–insulator–semiconductor structure (Pd–anodic oxide–InP) is studied in relation to the hydrogen concentration in the range 0.1–100 vol % in a nitrogen–hydrogen gas mixture. It is shown that, under simultaneous exposure of the structure to light and hydrogen, the photovoltage decay rate and the hydrogen concentration are exponentially related to each other: NH = aexp(bS). Here, NH is the hydrogen concentration (vol %) in the nitrogen–hydrogen mixture. S = dU/dt|t = 0 is the rate at which the signal U changes in the initial portion of the photovoltage decay, beginning from the instant at which the structure is brought into contact with the gas mixture. a and b are constants dependent on the thicknesses of the palladium layer and anodic oxide film on InP.

Simple method for accurate determination of the mean interface state density of MIS (metal/BN/InP) structures

A simple method for the determination of the mean interface density D itm of MIS structures is proposed. The method is based on modified bias–thermal stress measurements and combines capacitance–voltage measurements with doping profile determination. The method is illustrated on InP MIS structures with boron nitride (BN) as an insulator. The deposition of the BN films was performed at low temperature using a microwave plasma-enhanced CVD system. The method is validated by comparison to deep level transient spectroscopy results obtained on the same test samples.

Deep levels in Au-PO xN yH z-( n)InP MIS structures

Deep level transient spectroscopy (DLTS) and capacitance-voltage ( C- V) measurements have been used to detect and characterize deep centers and interface states in n-type InP MIS structures (with PO x N y H z insulating layer) in the temperature range of 130–330 K. Three electron traps P1, P2, P3 originating from the device fabrication process have been detected and characterized. The type of these defects (bulk or interface type) and their structure have been investigated. It is supposed that these centers are complex defects involving native and/or induced defects and unintentional impurities. It has been observed that in the formation of defects in particular the role of oxygen and phosphorus is important.

Discrete current fluctuations in InP MIS structures due to defects created by breakdown degradation in InP native oxide

Discrete current fluctuations before and after breakdown have been observed in InP MIS tunnel diodes with 30–50Å thick InP native oxide. It is proposed that breakdown produces additional oxide defects in localized regions and that the current flow through these sites is modulated by the action of defects.

Charge-discharge dynamics of disorder induced gap state continuum at compound semiconductor-insulator interfaces

Based on the recently proposed disorder-induced gap state (DIGS) model for interface states, the charge-discharge dynamics of interface state continuum at insulator-semiconductor (I-S) interfaces are theoretically analyzed and compared with the experiments on InP and InGaAs MIS structures. The concept occupation boundary used in the analysis clarifies the physics involved and simplifies the simulation of complex processes. By assuming a particular type of DIGS distribution in energy and in space, the observed complex hysteresis behavior of dispersion of MIS capacitance in MIS C-V curves as well as the current drift behavior of MISFET's are completely reproduced on computer, offering a unified understanding of a wide variety of phenomena associated with I-S interfaces.

InP MIS structures with diamondlike amorphous carbon films deposited by ion-beam sputtering and from plasma : Jae E. Oh, Joel D. Lamb, Paul G. Snyder, John A. Woollam and David Liu. Solid-St. Electron.29(9), 933 (1986)

InP MIS structures with diamondlike amorphous carbon films deposited by ion-beam sputtering and from plasma : Jae E. Oh, Joel D. Lamb, Paul G. Snyder, John A. Woollam and David Liu. Solid-St. Electron.29(9), 933 (1986)

InP MIS structures with diamondlike amorphous carbon films deposited by ion-beam sputtering and from plasma

The interfacial electronic properties of diamondlike carbon on both n-InP and p-InP have been studied. These measurements include conductance and capacitance versus frequency or bias voltage for metal-insulator-semiconductor structures. Carbon was deposited by both ion-beam sputtering, and from an rf plasma. We find that interface electronic state densities range from 10 11 to 10 13 states/eV cm 2, depending on sample and preparation procedures. Normalized conductance versus frequency data show an unusual behavior, namely, two loss peaks having greatly differing voltage dependencies. We speculate on the physical origins of the two peaks.

Radiation tolerance of NMOS technology on indium phosphide

Preliminary unbiased total-dose gamma irradiation results on InP MIS structures are reported. Using discrete FET and MIS diode samples as well as CCD and ring-oscillator (RO) integrated circuits, it is concluded that, under the present test conditions, no changes in the performance of these devices can be attributed to the gamma flux to doses as high as 108rad.

Perspectives on III–V compound MIS structures

An overview and assessment is provided of some aspects of the physics and technology of InP, GaAs, InAs, and InSb MIS structures with homomorphic and heteromorphic dielectric layers. Experimental measurements made on such InP and InSb MIS structures are interpreted in the context of the experimental and theoretical framework developed for the Si–SiOx MOS system. GaAs and InAs MIS structure exhibit anomalies attributed principally to pinning of the Fermi level by extrinsic surface states near midgap for GaAs and within the conduction band for InAs. Microwave power gain can be obtained from InP and GaAs MIS field effect transistors irrespective of the density of fast surface states present in them; the surface states cannot respond to the μ-wave signals applied to the MISFET gates.