Carrier Injection Research Articles

Forward bias annealing of proton radiation damage in NiO/Ga2O3 rectifiers

17 MeV proton irradiation at fluences from 3–7 × 1013 cm−2 of vertical geometry NiO/β-Ga2O3 heterojunction rectifiers produced carrier removal rates in the range 120–150 cm−1 in the drift region. The forward current density decreased by up to 2 orders of magnitude for the highest fluence, while the reverse leakage current increased by a factor of ∼20. Low-temperature annealing methods are of interest for mitigating radiation damage in such devices where thermal annealing is not feasible at the temperatures needed to remove defects. While thermal annealing has previously been shown to produce a limited recovery of the damage under these conditions, athermal annealing by minority carrier injection from NiO into the Ga2O3 has not previously been attempted. Forward bias annealing produced an increase in forward current and a partial recovery of the proton-induced damage. Since the minority carrier diffusion length is 150–200 nm in proton irradiated Ga2O3, recombination-enhanced annealing of point defects cannot be the mechanism for this recovery, and we suggest that electron wind force annealing occurs.

Evaluating Fluorinated-Aniline Units with Functionalized Spiro[Fluorene-9,9'-Xanthene] as Hole-Transporting Materials in Perovskite Solar Cells and Light-Emitting Diodes.

In the field of perovskite optoelectronics, developing hole-transporting materials (HTMs) on the spiro[fluorene-9,9'-xanthene] (SFX) platform is one of the current research focuses. The SFX inherits the merits of spirobifluorene in terms of the configuration and property, but it is more easily derivatized and regulated by virtue of its binary structure. In this work, we design and synthesize four isomeric SFX-based HTMs, namely m-SFX-mF, p-SFX-mF, m-SFX-oF, and p-SFX-oF, through varying the positions of fluorination on the peripheral aniline units and their substitutions on the SFX core, and the optoelectronic performance of the resulting HTMs is evaluated in both perovskite solar cells (PSCs) and light-emitting diodes (PeLEDs) by the vacuum thermal evaporating hole-transporting layers (HTLs). The HTM p-SFX-oF exhibits an improved power conversion efficiency of 15.21% in an inverted PSC using CH3NH3PbI3 as an absorber, benefiting from the deep HOMO level and good HTL/perovskite interface contact. Meanwhile, the HTM m-SFX-mF provides a maximum external quantum efficiency of 3.15% in CsPb(Br/Cl)3-based PeLEDs, which is attributed to its perched HOMO level and shrunken band-gap for facilitating charge carrier injection and then exciton combination. Through elucidating the synergistic position effect of fluorination on aniline units and their substitutions on the SFX core, this work lays the foundation for developing low-cost and efficient HTMs in the future.

Dual operation modes of the Ge Schottky barrier metal–oxide–semiconductor field-effect transistor

A germanium p-channel Schottky barrier metal–oxide–semiconductor field-effect transistor (SB-MOSFET) with germanium–platinum Schottky contacts is demonstrated experimentally. The fabrication process has a low thermal budget of 450° C and requires neither intentional doping nor ion implantation. At a temperature of 4 K, the p-channel SB-MOSFET turns on at a gate voltage of −1.6 V and shows a peak mobility of 500 cm2/V s at a carrier density of 3 × 1012 cm–2. Under high drain–source bias voltages, the device operates in an unconventional mode where the current is limited by the source contact. Injection of carriers from the source contact to the germanium channel is controlled by the gate bias, which modulates the Schottky barrier capacitively. The transconductance in this mode deviates from and is significantly higher than the value expected for a conventional MOSFET with the same geometry, mobility, and capacitance. Based on four-point current–voltage measurements, we present a theoretical band diagram of the device and give a physical picture for the observed high currents and transconductances.

P‐164: Highly Efficient Quantum Dot Light‐emitting Diodes Enhanced via Ultraviolet Postprocessing

Recently, low efficiency and stability due to unbalanced carrier injection remain urgent problems in inorganic quantum dot light†emitting diodes (QLEDs). To address these issues, the device was irradiated with ultraviolet light in this study, which improved the interface contact. This resulted in the smaller electron potential barrier, increased hole injection and more balanced carrier injection in the device. Ultimately, the device efficiency was improved, and the operating lifetime of the device was increased by ~91†fold.

Controlling the frequencies of photons emitted by a single quantum dot in a one-dimensional photonic crystal

Subject of study. A single InAs quantum dot in a one-dimensional photonic crystal based on GaAs is examined. Aim of study. The aim of this study is to develop a method for controlling photon emission frequencies from a single quantum dot within a one-dimensional photonic crystal based on changes in the electromagnetic mass of an electron in the photonic crystal medium. Method. The proposed approach leverages the effect of changing the electromagnetic mass of an electron in the photonic crystal medium, manifesting as corrections to electron energy levels depending on the optical density of the medium. To control this density, the injection of free charge carriers and the quadratic electro-optic Kerr effect are proposed. Main results. The feasibility of in situ control of photon emission frequencies from a quantum dot was demonstrated using quantum transitions between the p- and s-states of a hydrogen-like InAs quantum dot situated in the air voids of a one-dimensional GaAs photonic crystal. This control is achieved through the effect of changing the electromagnetic mass of an electron, as well as tuning the refractive index of the photonic crystal via free charge carrier injection and the electro-optic Kerr effect. Calculations indicate that the photon energy control range available in experiments is limited to several tens of microelectronvolts, restricting practical applicability, and the observed displacement effect is smaller than experimentally recorded values. However, the energy level displacement, influenced by the quantum electrodynamic effect under investigation, exhibits a quadratic dependence on the refractive index of the material forming the photonic crystal. Consequently, the method is expected to scale significantly with increasing optical density. Such photonic crystals could be constructed using metamaterials with a high refractive index. Practical significance. The findings of this study, centered on developing a method for controlling photon emission frequencies from a single quantum dot in a one-dimensional photonic crystal, lay the groundwork for photon-emitter interfaces. These interfaces will incorporate key quantum functionalities, including photonic qubits, single-photon light sources, and nonlinear quantum photon-photon gates.

28‐5: Late‐News Paper: Investigation on Enhanced Performance of All†solution Inverted Quantum Dot Light Emitting Diode via Changing a Solvent

In inverted quantum‐dot light‐emitting‐diodes (QD‐LED), it is important to use orthogonal solvent for hole‐transport layer(HTL). In addition, modulating work function of each layer is good way to enhance carrier injection barrier. In this research, we confirmed the viability of usage of a solvent, named gamma‐valerolactone (GVL) for forming hole transport layer (HTL). By using the solvent, current density, luminance, roll‐off characteristics were enhanced, and highest occupied molecular orbital (HOMO) level was changed, which can enhance the hole injection.

P‐194: New CGL Structure for Improving Leakage of Stacked OLED Devices

In this paper, a novel CGL structure is designed and studied to improve the lateral leakage in stacked OLED devices. Experiments confirmed that the position of transverse leakage mainly occurred in the CGL layer, and the new CGL structure was realized by optimizing the n‐CGL material. Compared with the reference CGL structure device, the voltage of the new structure device decreased by 0.05v, and the current efficiency increased by 5%. The average value of the color gamuts was improved by 5%, demonstrating the effectiveness and stability of the new CGL structure. The mechanism of the new CGL structure was verified by EOD. The carrier transmission performance of the new CGL structure was worse, but the carrier injection performance was improved, so as to improve the lateral leakage problem under the premise of ensuring the role of CGL.

Impact of the number of well-barrier pair in the MQWs on the carrier distribution and confinement for the AlGaN-based far-UVC LEDs

AlGaN-based far-UVC LEDs are urgently in demand recently. However, as the wavelength decreases below 250 nm, the EQE experiences a significant decrease due to the increasing difficulty of realizing high-efficiency doping and high crystal quality with increasing Al content, resulting in severe carrier non-uniform distribution in the MQWs and limiting the radiative recombination. Here, we investigate the effect of the number of well-barrier pair in the MQWs on the performance of AlGaN-based far-UVC LEDs regarding carrier distribution and confinement. The results indicate that an insufficient number of well-barrier pair in the MQWs will lead to excessive carrier injection and insufficient carrier confinement, and an excessive number of well-barrier pairs will make it difficult for carriers to diffuse to the distal quantum wells. It is found that the MQWs with six pairs of well-barrier may be more suitable for far-UVC LEDs. This study provides a feasible direction to optimize far-UVC LEDs.

Nanosecond Structural Dynamics during Electrical Melting of Charge Density Waves in 1T-TaS_{2}.

Electrical control of charge density waves has been of immense interest, as the strong underlying electron-lattice interactions potentially open new, efficient pathways for manipulating their ordering and, consequently, their electronic properties. However, the transition mechanisms are often unclear as electric field, current, carrier injection, heat, and strain can all contribute and play varying roles across length scales and timescales. Here, we provide insight on how electrical stimulation melts the room temperature charge density wave order in 1T-TaS_{2} by visualizing the atomic and mesoscopic structural dynamics from quasi-static to nanosecond pulsed melting. Using a newly developed ultrafast electron microscope setup with electrical stimulation, we reveal the order and strain dynamics during voltage pulses as short as 20ns. The order parameter dynamics across a range of pulse amplitudes and durations support a thermally driven mechanism even for fields as high as 19 kV cm^{-1}. In addition, time-resolved imaging reveals a heterogeneous, mesoscopic strain response across the flake, including MHz-scale acoustic resonances that emerge during sufficiently short pulsed excitation which may modulate the order. These results suggest that metallic charge density wave phases like studied here may be more robust to electronic switching pathways than insulating ones, motivating further investigations at higher fields and currents in this and other related systems.

Drag force shear manipulating ligand distribution at perovskite buried interface enables efficiently suppressed EQE roll-off of perovskite light-emitting diodes

Effectively manipulating the ligand distribution at the perovskite buried interface is critical for achieving high-performance nanocrystal-based perovskite light-emitting diodes (PeLEDs). However, it is challenging to realize it due to the non-exposed feature of the buried interface. Here, the drag force shear (DFS) is utilized to successfully regulate the ligand distribution at the perovskite buried interface which can effectively suppress the EQE roll-off of devices. By manipulating the ligand distribution at the perovskite buried interface, it is revealed that a more ligand preservation could result in an improved defect passivation leading to higher EQE, while the carrier injection barrier is increased simultaneously making devices suffer from severe EQE roll-off and decreased luminance, and vice versa. With the help of optimizing the ligand distribution by manipulating the DFS, the balance between carrier injection and interfacial defect passivation is successfully achieved. Resultantly, an enhanced EQE of 17.24 % with substantially suppressed EQE roll-off is reached, culminating in a remarkable luminance of 61,900 cd/m2. This work presents an efficient approach to control ligand distribution at the perovskite buried interface and offers valuable insights for realizing high luminance and low EQE roll-off of PeLEDs.

Modeling of MoS2/Si heterostructure to study charge transfer dynamics

Here, we synthesized a MoS2/Si heterojunction device using a scalable approach involving DC sputtering coupled with sulfurization. The observed current–voltage characteristics unequivocally indicate a rectifying behavior at MoS2/Si heterointerface. To quantitatively assess the carrier dynamics, a comprehensive analysis utilizing thermionic emission and Landauer transport formalism model was employed. The spatial variation in current across the MoS2/Si devices suggests a potential influence of MoS2’s in-plane series resistance. Furthermore, the electrical behavior of the device is found to be temperature-dependent, with higher temperatures resulting in enhanced conductivity attributed to an increase in thermally generated charge carriers. As temperature rises, the Landauer current model observes an increased ratio of density of states to carrier injection rate, along with other temperature-dependent terms. Meanwhile, the thermionic current model maintains a fixed effective value for its material-dependent term, the Richardson constant, irrespective of temperature changes. Therefore, a comparative analysis between thermionic emission and Landauer transport formalism reveals that the conventional thermionic emission model better aligns with experimentally observed leakage current in reverse bias, showcasing a minimal barrier height at the heterojunction. This comprehensive investigation provides valuable insights into the charge transfer mechanisms at the MoS2/Si interface, opening avenues for its potential innovative applications in electronic devices.

Surface Treatment with Tailored π-Conjugated Fluorene Derivatives Significantly Enhances the Performance of Perovskite Light-Emitting Diodes.

Surface defect passivation and carrier injection regulation have emerged as effective strategies for enhancing the performance of perovskite light-emitting diodes (Pero-LEDs). It usually requires two functional molecules to realize defect passivation and carrier injection regulation separately. In other words, developing one single molecule possessing these capabilities remains challenging. Herein, we utilized π-conjugated fluorene derivatives as surface treatment materials, 9,9-Spirobi[fluorene] (SBF), 9,9-Spirobifluoren-2-yl-diphenylphosphine oxide (SPPO1), and 2,7-bis(diphenylphosphoryl)-9,9'-spirobifluorene (SPPO13), to investigate the influence of their chemical structure on device optoelectronic performance, especially for defect passivation and carrier injection regulation. Consequently, the passivation capability of double-bonded SPPO13 surpassed single-bonded SPPO1 and nonbonded SBF, which all showed excellent electron transport properties, enhancing electron injection. The maximum external quantum efficiencies (EQE) for Pero-LEDs treated with SBF, SPPO1, and SPPO13 were 8.13, 17.48, and 22.10%, respectively, exceeding that of the derivative-free device (6.55%). Notably, SPPO13-treated devices exhibited exceptional reproducibility, yielding an average EQE of 20.00 ± 1.10% based on 30 devices. This result emphasizes the potential of tailored fluorene derivatives for enhancing the device performance of Pero-LEDs.

Comparative analysis of heavy ions and alpha particles impact on gate-all-around TFETs and gate-all-around MOSFETs

The single-event-transient (SET) effect due to heavy ions and alpha particles irradiation on n-type gate-all-around tunnel field effect transistor (GAA TFET) and n-type gate-all-around MOSFET (GAA MOSFET) has been carried out. Due to differences in carrier injection mechanisms, the generated electron-hole pairs (EHPs) due to high-energy particles (HEPs) act differently on the device. In addition, the impact of HEPs (i.e., heavy ions and alpha particles) on several locations along the channel are analyzed followed by the analysis of different energies of heavy ions and alpha particles irradiation on the device. Further, the impact of varying striking angles of HEPs on the device is also analyzed to get a close match as practically exposed device characteristic. Finally, the bipolar gain of the device has been analyzed which shows GAA TFET device has more immunity toward heavy ions strike and weak immunity toward alpha particle strikes when compared to the GAA MOSFET counterpart.

Energy storage performances of polymer-based composite dielectrics containing an in-situ-grown boron nitride layer

Polymer-based energy storage materials are widely utilized in the fields of electrical and electronics due to their high-power density and excellent charge-discharge efficiency. In this study, polyetherimide (PEI) composite films with outstanding energy storage properties were prepared by growing an inorganic barrier layer of boron nitride (BN) on the surface of PEI films through the in situ chemical vapor deposition (PECVD) method. The effects of BN deposition time on the dielectric properties, leakage current density, and energy storage properties of the composite films were investigated. The results reveal that the BN inorganic barrier layer, prepared by the PECVD method, demonstrates excellent interfacial compatibility with the PEI polymer matrix and forms a densely deposited layer. The BN inorganic barrier layer effectively suppresses carrier injection at the electrode, reduces the current density inside the PEI composite film, and improves the breakdown strength of the composite film. The composite film exhibits optimal performance when BN is deposited for 20 min. At an electric field strength of 660 MV/m, the energy storage density of the composite film reaches 6.08 J/cm3, which is 1.53 J/cm3 higher than that of pure PEI, while maintaining a charge-discharge efficiency of 90.43%. The findings of this study provide valuable theoretical support for the design of polymer-based energy storage materials.

Temperature-dependent electroluminescence of red high-In-content MQWs of dual-wavelength micro-LED

Temperature-dependent electroluminescence (TDEL) measurements have been employed to investigate the carrier transport and recombination processes of InGaN red micro-LED based on dual-wavelength InGaN/GaN MQWs structure. EL peak energy and carrier transport of the red micro-LED both show temperature dependence, due to temperature-induced changes in defect activation. In addition, the current density at which the blue peak of the low-In-content appears in the EL spectrum varies with temperature. As the temperature increases, the blue peak of the low In component tends to appear at higher current densities, which may be attributed to the increase in thermally activated defects hindering the injection of holes into the low-In-content MQWs further away from p-GaN. Furthermore, the IQEs of the high-In-content MQWs are estimated from the TDEL method and then reveal the temperature-dependent efficiency droop. The IQE decreases as temperature increases, particularly above 50 K, where it drops sharply due to temperature-dependent nonradiative recombination. And the two different variation trends in IQE of MQWs with high and low In content reveal a competitive mechanism in carrier distribution, implying that more escaping holes from high-In-content MQWs will further reduce red emission efficiency but enhance carrier injection and blue emission in low-In-content MQWs.

Bias‐Switchable Dual‐Mode Organic Photodiodes Enabled by Manipulation of Interface Layers

AbstractBias‐switchable dual‐mode organic photodiodes (OPDs) that integrate photovoltaic and photomultiplication modes are recently developed and shown prospects in complex light‐intensity applications. Yet, the device physics that focuses on carrier dynamics is still a challenge and needs to be further explored. Herein, dual‐mode OPDs are developed through interface layer manipulation, that is, introducing cathode interface layers (typically, ZnxO:D149) with deep energy levels and abundant bulk defects and an anode interface layer of thermally‐evaporated ZnO (e‐ZnO) with a wide bandgap. Under reverse bias, ZnxO:D149 forms a barrier wall to effectively block external holes and maintain the photovoltaic mode of the OPDs. Under forward bias, the capturing effect of ZnxO:D149 and blocking effect of e‐ZnO help to reduce the dark current; when under illumination, defect traps capture photo‐generated holes, eliminating the barrier traps and promoting unobstructed injection of external carriers to achieve photomultiplication effect. The typical device delivers high specific detectivity (>1012 Jones) and fast response (<40 µs), and exhibits disparate external quantum efficiency in two operating modes, showing promise for simultaneously detecting faint and strong light. This general strategy for preparing dual‐mode OPDs is compatible with CMOS processing technology and meets the miniaturization and integration requirements of next‐generation detection systems.

Highly enhanced Quantum dot light-emitting diode performance by controlling energy resonance in inorganic insertion layers

Quantum-dot light-emitting diodes (QLED) have become a research trend in the field of new displays due to their low cost, wide color gamut, narrow bandwidth, and characteristics that enable production through the solution-gel method. However, the electrical performance of QLED is consistently constrained by energy losses and imbalanced charge carrier injection. This motivates our focus on exciton recombination and energy losses within the quantum-dot layer to enhance the electrical efficiency of QLED. In this work, we introduce a method using a CdZnS quantum dot (B-QD) interlayer to modulate energy transfer and charge carrier transport in QLED devices employing CdSe quantum dot (G-QD) as the emissive layer. By strategically incorporating a B-QD layer between the G-QD and HTL/ETL, we facilitate energy transfer due to the overlap between the excitation wavelength of B-QD and the absorption wavelength of G-QDs. This leads to enhanced energy injection in QLED devices, resulting in a high current efficiency of 39.54 Cd/A and a peak brightness of 522,272 cd/m2 for efficient QLED. The corresponding external quantum efficiency (EQE) is greatly improved from 5.62 % to 9.4 %. Our work provides a straightforward and effective approach to modulate exciton recombination and energy injection and further can be applicable to other photo-electronics devices.

Transition‐Metal‐Doped TiO2 Nanorods with High‐Visible‐Light Response via a Simple Hydrothermal Method

Transition‐metal‐ion doping is an effective method to shorten bandgap and enhance visible‐light absorption of TiO2, but there are still some serious challenges for most doping technologies, such as nonuniform doping, severe lattice damages, metal atoms agglomeration, and inactivated impurities. Herein, a simple and universal hydrothermal method is developed to realize the effective transition‐metal ions doping of TiO2 (including Fe, Co, Mn, Cu, V, and Cr). The photoelectrochemical water splitting performances of Cr‐doped TiO2 nanorods with multifarious Cr ion valence states (Cr3+ or Cr6+ ions), various Cr‐ion concentrations, with or without oxygen vacancy activation are emphatically and systematically studied. Experiments and theoretical calculations demonstrate that the remarkably enhanced carrier separation and injection efficiencies are the key factors to improve the visible‐light photoactivity, benefiting from the homogeneous distribution of impurity atoms and the incorporation of oxygen vacancies. The Cr3+‐ion‐doped TiO2 nanorod arrays with oxygen vacancy activation (Cr3+/Ov–TiO2) displays an impressive incident photon‐to‐electron conversion efficiency of 5.4% at 450 nm visible light, far superior to the pure TiO2 of 0.03%. Furthermore, no obvious photocurrent decay is observed in the Cr3+/Ov–TiO2 photoanode after 12 h continuous light illumination.

Long-range order enabled stability in quantum dot light-emitting diodes.

Light-emitting diodes (LEDs) based on perovskite quantum dots (QDs) have produced external quantum efficiencies (EQEs) of more than 25% with narrowband emission1,2, but these LEDs have limited operating lifetimes. We posit that poor long-range ordering in perovskite QD films-variations in dot size, surface ligand density and dot-to-dot stacking-inhibits carrier injection, resulting in inferior operating stability because of the large bias required to produce emission in these LEDs. Here we report a chemical treatment to improve the long-range order of perovskite QD films: the diffraction intensity from the repeating QD units increases three-fold compared with that of controls. We achieve this using a synergistic dual-ligand approach: an iodide-rich agent (aniline hydroiodide) for anion exchange and a chemically reactive agent (bromotrimethylsilane) that produces a strong acid that in situ dissolves smaller QDs to regulate size and more effectively removes less conductive ligands to enable compact, uniform and defect-free films. These films exhibit high conductivity (4 × 10-4 S m-1), which is 2.5-fold higher than that of the control, and represents the highest conductivity recorded so far among perovskite QDs. The high conductivity ensures efficient charge transportation, enabling red perovskite QD-LEDs that generate a luminance of 1,000 cd m-2 at a record-low voltage of 2.8 V. The EQE at this luminance is more than 20%. Furthermore, the stability of the operating device is 100 times better than previous red perovskite LEDs at EQEs of more than 20%.

Toward Gigahertz Photodetection with Transition Metal Dichalcogenides.

ConspectusTransition metal dichalcogenides (TMDCs) exhibit favorable properties for optical communication in the gigahertz (GHz) regime, such as large mobilities, high extinction coefficients, cheap fabrication, and silicon compatibility. While impressive improvements in their sensitivity have been realized over the past decade, the bandwidths of these devices have been mostly limited to a few megahertz. We argue that this shortcoming originates in the relatively large RC constants of TMDC-based photodetectors, which suffer from high surface defect densities, inefficient charge carrier injection at the electrode/TMDC interface, and long charging times. However, we show in a series of papers that rather simple adjustments in the device architecture afford TMDC-based photodetectors with bandwidths of several hundreds of megahertz. We rationalize the success of these adjustments in terms of the specific physical-chemical properties of TMDCs, namely their anisotropic in-plane/out-of-plane carrier behavior, large optical absorption, and chalcogenide-dependent surface chemistry. Just one surprisingly simple yet effective pathway to fast TMDC photodetection is the reduction of the photoresistance by using light-focusing optics, which enables bandwidths of 0.23 GHz with an energy consumption of only 27 fJ/bit.By reflecting on the ultrafast intrinsic photoresponse times of a few picoseconds in TMDC heterostructures, we motivate the application of more demanding chemical strategies to exploit such ultrafast intrinsic properties for true GHz operation in real devices. A key aspect in this regard is the management of surface defects, which we discuss in terms of its dependence on the layer thickness, its tunability by molecular adlayers, and the prospects of replacing thermally evaporated metal contacts by laser-printed electrodes fabricated with inks of metalloid clusters. We highlight the benefits of combining TMDCs with graphene to heterostructures that exhibit the ultrafast photoresponse and large spectral range of Dirac materials with the low dark currents and high responsivities of semiconductors. We introduce the bulk photovoltaic effect in TMDC-based materials with broken inversion symmetry as well as a combination of TMDCs with plasmonic nanostructures as means for increasing the bandwidth and responsivity simultaneously. Finally, we describe the prospects of embedding TMDC photodetectors into optical cavities with the objective of tuning the lifetime of the photoexcited state and increasing the carrier mobility in the photoactive layer.The findings and concepts detailed in this Account demonstrate that GHz photodetection with TMDCs is feasible, and we hope that these bright prospects for their application as next-generation optoelectronic materials motivate more chemists and material scientists to actively pursue the development of the more complicated material combinations outlined here.