InGaAsP Alloys Research Articles

Schottky-barrier height of Au/p-InGaAsP alloys lattice-matched to InP

The barrier heights of Au/p-InGaAsP alloys lattice-matched to InP substrates are measured by the photoelectric technique. The composition dependence of the barrier height varies smoothly from 0.77 eV for p-InP to 0.50 eV for p-InGaAs. The data are consistent with a barrier height dependence on the As/P anion ratio only.