MoSe2/WSe2 heterostructure is gaining significant research interest due to its unique electrical and optical properties, making them suitable for various advanced applications. This work focuses on inter-layer charge transfer effects on MBE-grown MoSe2 and WSe2 heterostructures. Bilayer (BL)-MoSe2/BL-WSe2 and BL-WSe2/BL-MoSe2 have been grown over a c-plane sapphire substrate using molecular beam epitaxy (MBE). Different characterization techniques including Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and reflection high-energy electron diffraction (RHEED) confirm the phase, composition, surface morphology, and crystalline quality of the films, respectively. The band diagram using Ultraviolet-visible (UV-Vis) spectroscopy, XPS core level spectra, XPS valence band spectra and surface work function shows that individual MoSe2 and WSe2 BLs grown over c-plane sapphire are n-type and p-type semiconductors, respectively. This study shows that when the individual BLs form MoSe2/WSe2 and WSe2/MoSe2 heterostructures, a unidirectional electron transfer occurs from the WSe2 to MoSe2, which is independent of WSe2 and MoSe2 stacking order. As a result, the Fermi level position changes for both the materials in their heterostructures, which makes MoSe2 more n-type semiconductor and WSe2 more p-type semiconductor. MoSe2/WSe2 and WSe2/MoSe2 heterostructures show a type II band alignment with a conduction band offset of 0.57 eV and a valance band offset of 0.51 eV These findings contribute to a deeper understanding of the interfacial charge transfer effects and design of MoSe2 and WSe2 heterostructures for potential device applications.
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