Purpose of research. Study of morphological and phase changes in the structure of tantalum nitride nanofilms formed by magnetron reactive sputtering on a silicon substrate.Methods. Magnetron sputtering on a silicon substrate was performed using the MVU TM-Magna T setup with the sputtering time parameter changing from 300 to 900 sec, and also with constant power parameters of 500 W and working gas pressure of Ar 0,5 Pa. The morphological and phase changes in the structure of tantalum nitride nanofilms were studied using atomic force microscopy and X-ray phase analysis. The fractal dimension was determined using the cube counting method. X-ray diffractometric analysis in the in situ measurement mode with discrete heating (in 100 °C increments) in air up to 1000 °C using the PAAR HTK-16 high-temperature attachment.Results. Using atomic force microscopy methods, it was found that the granulometric distribution of nanoclusters in the studied TaN nanofilms was Gaussian and an increase in the lateral size of particles was observed with an increase in the deposition time. The nanofilm with a deposition time of 300 s had minimal roughness. The statistical fractal dimension was calculated, the value of which corresponded to their three-dimensionality. According to the X-ray phase analysis data, the sizes of the coherence region, texturing, microdeformations and interplanar deformation distortions were determined, and a mixed Stranski-Krastanov mechanism of nanofilm formation was established.Conclusion. The surface roughness of nitride nanofilms formed at a constant power (500 W) depends significantly on the magnetron sputtering time and N2 concentration. In all studied nanofilm structures, the dominant growth mechanism was the mixed Stranski–Krastanov mechanism.
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