Image Lag Research Articles

Improvement of X-ray response of CZT films by post-annealing

CdZnTe (CZT) epitaxial films are promising for X-ray flat panel detectors due to their ability for large area fabrication, high absorption efficiency, and excellent detective quantum efficiency (DQE). However, challenges like image lag, ghosting, and reduced DQE due to long response times and high dark currents persist. This study introduces a novel post-in-situ annealing technique to enhance CZT film sensitivity and transient response. Results show that a brief 20 s annealing treatment increased surface Zn content, raising detector resistivity from 3.5 × 109 Ω·cm to 3.3 × 1010 Ω·cm while reducing leakage current at high voltages. This treatment also significantly reduced surface defects, improving CZT film detectors’ X-ray response time. Moreover, the electrons mobility-lifetime product (μτ)e improved from 2.30 × 10−5 cm2/V to 2.17 × 10−4 cm2/V, indicating enhanced charge carrier dynamics crucial for high-speed X-ray detection. Notably, the X-ray response sensitivity achieved a commendable 126 μC G−1· cm−2 a bias of 30 V. In conclusion, in-situ annealing represents a remarkable step forward in the development of CZT technology for X-ray flat panel imaging, addressing critical issues and potentially broadening its applications in medical and industrial imaging systems.

Effect of frame rate on image quality in cardiology evaluated using an indirect conversion dynamic flat-panel detector.

To verify the effect of the frame rate on image quality in cardiology, we used an indirect conversion dynamic flat-panel detector (FPD). We quantified the input-output characteristics, and determined the modulation transfer function (MTF) and normalized noise power spectrum (NNPS) of the equipment used in cardiology at 7.5, 10, 15, and 30 frames per second (fps). We also calculated the noise power spectrum for still images and videos at all frame rates and obtained the image lag correction factor r. The input-output characteristics and the MTF agreed even when the frame rate was varied. The NNPS tended to decrease uniformly as a function of frequency at increasing frame rates. The factor r decreased as a function of the frame rate, and its minimum value was 30 fps. Our results suggest that high-frame-rate imaging in cardiology using indirect conversion dynamic FPDs is affected by image lag.

A method of 2D and 3D display of radar terminal base on programmable pipeline

AbstractIn contrast to the ideal 3D display for meteorological radar, there is no 3D mode in the military engineering field. How to realise the 2D and 3D display for general radar terminal efficiently using the local graphics processing unit (GPU), which is impossible to realise with the traditional method of field programmable gate array now, has became an important research direction. In this paper, based on the radar echo equation, elevation was used to describe the three‐dimensional echo. After the three‐dimensional echo data model was built, the shader method with framebuffer objects was employed to display the data, while the data was capped by peripheral component interconnect express using direct memory access. It was designed to display the Plan Position Indicator and the attenuation of radar images with the 2D and 3D shaders. A series of numerical simulations were conducted to avoid image tear or lag. Compared to the methods of graphics device interface and the blend of images, the programmable pipeline of GPU performs well and is suitable for the display of radar terminal.

Ionising radiation effects in a soft X-ray CMOS image sensor

CIS221-X is a prototype monolithic CMOS image sensor, optimised for soft X-ray astronomy and developed for the proposed ESA THESEUS mission. A significant advantage of CMOS technology is its resistance to radiation damage. To assess this resistance, four backside-illuminated CIS221-X detectors have been irradiated up to a total ionising dose of 113 krad at the ESA ESTEC 60Co facility. Using unirradiated readout electronics, the performance of each sensor has been measured before and after irradiation. The gain, readout noise and dark current are shown to increase, while the image lag remains unchanged. These measurements are compared to that of similar CMOS image sensors and a possible physical explanation is provided for each result.

A quantitative CBCT pipeline based on 2D antiscatter grid and grid-based scatter sampling for image-guided radiation therapy.

Quantitative accuracy is critical for expanding the role of cone beam CT (CBCT) imaging from target localization to quantitative treatment monitoring and plan adaptations in radiation therapy. Despite advances in CBCT image quality improvement methods, quantitative accuracy gap between CBCT and multi-detector CT (MDCT) remains. In this work, a physics-driven approach was investigated that combined robust scatter rejection, raw data correction and iterative image reconstruction to further improve CBCT image quality and quantitative accuracy, referred to as quantitative CBCT (qCBCT). QCBCT approach includes tungsten 2D antiscatter grid hardware, residual scatter correction with grid-based scatter sampling, image lag, and beam hardening correction for offset detector geometry linac-mounted CBCT. Images were reconstructed with iterative image reconstruction to reduce image noise. qCBCT was evaluated using a variety of phantoms to investigate the effect of object size and its composition on image quality, and image quality was benchmarked against clinical CBCT and gold standard MDCT images used for treatment planning. QCBCT provided statistically significant improvement in CT number accuracy and reduced image artifacts when compared to clinical CBCT images. When compared to gold standard MDCT, mean HU errors in qCBCT and clinical CBCT were 17±9 and 38±29 HU, respectively. Magnitude of phantom size dependent HU variations were comparable between MDCT and qCBCT images. With iterative reconstruction, contrast-to-noise ratio improved by 25% when compared to clinical CBCT protocols. Combination of novel scatter suppression techniques and other data correction methods in qCBCT provided CT number accuracy comparable to gold standard MDCT used for treatment planning. This approach may potentially improve CBCT's promise in fulfilling the tasks that demand high quantitative accuracy, such as online dose calculations and treatment response assessment, in image guided radiation therapy.

Mathematical model of potential distribution in a pinned photodiode of an indirect time offlightCMOS image sensor.

This paper focuses on the rapid charge transfer of lock-in pixels in time of flight 3D image sensors. Through the principal analysis, a mathematical model of potential distribution in a pinned photodiode (PPD) in different comb shapes is established. Based on this model, the influence of different comb shapes on the accelerating electric field in PPD is analyzed. The semiconductor device simulation tool SPECTRA is applied to verify the effectiveness of the model, and the simulation results are analyzed and discussed. When the width of comb tooth is in narrow and medium range, the potential changes more obviously with the increase of comb tooth angle α, whereas the potential becomes stable even if the comb tooth angle α increases sharply with the wide comb tooth width. The proposed mathematical model contributes to instructing the design of pixel transferring electrons rapidly and resolving image lag.

Investigating the image lag of a scientific CMOS sensor in X-ray detection

In recent years, scientific CMOS (sCMOS) sensors have been vigorously developed and have outperformed CCDs in several aspects: higher readout frame rate, higher radiation tolerance, and higher working temperature. For silicon image sensors, image lag will occur when the charges of an event are not fully transferred inside pixels. It can degrade the image quality for optical imaging, and deteriorate the energy resolution for X-ray spectroscopy. In this work, the image lag of a sCMOS sensor is studied. To measure the image lag under low-light illumination, we constructed a new method to extract the image lag from X-ray photons. The image lag of a customized X-ray sCMOS sensor GSENSE1516BSI is measured, and its influence on X-ray performance is evaluated. The result shows that the image lag of this sensor exists only in the immediately subsequent frame and is always less than 0.05% for different incident photon energies and under different experimental conditions. The residual charge is smaller than 0.5e− with the highest incident photon charge around 8ke−. Compared to the readout noise level around 3e−, the image lag of this sensor is too small to have a significant impact on the imaging quality and the energy resolution. The image lag shows a positive correlation with the incident photon energy and a negative correlation with the temperature. However, it has no dependence on the gain setting and the integration time. These relations can be explained qualitatively by the non-ideal potential structure inside the pixels. This method can also be applied to the study of image lag for other kinds of imaging sensors.

Minimization of image lag in polycrystalline mercuric iodide converters through incorporation of Frisch grid structures for digital breast tomosynthesis

Objective. Polycrystalline mercuric iodide photoconductive converters fabricated using particle-in-binder techniques (PIB HgI2) provide significantly more detected charge per x-ray interaction than from a-Se and CsI:Tl converters commonly used with active matrix flat-panel imagers (AMFPIs). This enhanced sensitivity makes PIB HgI2 an interesting candidate for applications involving low x-ray exposures—since the relatively high levels of additive electronic noise exhibited by AMFPIs incorporating a-Se and CsI:Tl reduce detective quantum efficiency (DQE) performance under such conditions. A theoretical study is reported on an approach for addressing a major challenge impeding practical use of PIB HgI2 converters—the high lag exhibited by the material (over 10%) which would lead to undesirable image artifacts in applications involving acquisition of consecutive images such as digital breast tomosynthesis. Approach. Charge transport modeling accounting for the trapping and release of holes (thought to be the primary contributor to lag) was used to examine signal properties, including lag, of pillar-supported Frisch grids embedded in the photoconductor for 100 μm pitch AMFPI pixels. Performance was examined as a function of electrode voltage, grid pitch (center-to-center distance between neighboring grid wires) and the ratio of grid wire width to grid pitch. Main results. Optimum grid designs maximizing suppression of signal generated by hole transport, without significantly affecting the total signal due to electron and hole transport, were identified and MTF was determined. For the most favorable designs, additional modeling was used to determine DQE. The results indicate that, through judicious choice of grid design and operational conditions, first frame lag can be significantly reduced to below 1%—less than the low levels exhibited by a-Se. DQE performance is shown to be largely maintained as exposure decreases—which should help to maintain good image quality. Significance. Substantial reduction of lag in PIB HgI2 converters via incorporation of Frisch grids has been demonstrated through modeling.

Influence of Pixel Design on Charge Transfer in Pinned Photodiode CMOS Image Sensors

The influence of pixel design on charge transfer, mainly on potential barrier and potential pocket, is investigated in this paper. By simplifying the interface region between the pinned photodiode (PPD) and the transfer gate (TG), an intuitive and simple method for analyzing the potential barrier and pocket is presented. Through TCAD simulations, the validity of the analysis method is verified, and the influence of some key dimension and process parameters in PPD pixel design on the potential barrier and pocket is clarified. The whole study help improve the understanding of the charge transfer limitation mechanism, and can achieve high charge transfer efficiency and low image lag noise in the PPD pixel design of CMOS image sensors (CISs).

The effect of photodiode shape on pinning potential for charge transfer in CMOS image sensors

The effect of the pinned photodiode (PPD) shape on charge transfer has been investigated in this paper. By equating the change in pinning potential distribution due to PPD shape to the decrease in depth of the depletion region in the vertical direction, an analytical model of the PPD shape effect on the pinning potential is proposed. The model for a triangular-like PPD is validated by TCAD simulations and is in very good agreement with the simulation results. Based on the model results, a tower-shaped PPD shape that can obtain constant lateral electric field is given. Simulation results show that the tower-shaped PPD have good pinning potential variation linearity and much better charge transfer performance than rectangular and triangular PPDs. The model and analysis results in this paper provide theoretical support and design ideas for the shape design and optimization of PPD-based pixels to improve the charge transfer speed and reduce the image lag.

Unusual worm-like radiopacities in the radiographs of patients with cervical spondylosis

This report describes three patients with cervical spondylosis whose diagnostic radiographs showed worm-like, irregularly curved radiopaque lines and strings in the head and neck region during routine chiropractic examinations. Such artifacts are frequently misinterpreted as parasitic infection, electrostatic discharges, detector image lag, fracture, or ligature wires. All three patients with worm-like radiopacities disclosed their 15-20 years of history of acupuncture treatment to relieve neck pain. The present cases of unexpected and coincidental findings may suggest a possible acupuncture-caused radiographic artifacts in the neck and jaw bones. In particular, the patient had previous gold thread treatments possibly associated with the observed radiographic artifacts. These cases may emphasize the importance of having a thorough understanding of patient history regarding unexpected radiographic artifacts.

Optimization of Photodiode Design Through Analysis of Full-Well Capacity and Image Lag in 0.5 μm CMOS Image Sensors With Vertical Transfer Gates

Recently, the main issue for developing the latest small pixels is maintaining the full-well capacity (FWC) while minimizing image lag as the pixel pitch is scaled down within the sub-micron scale. In this letter, the FWC and image lag characteristics are optimized by varying the photodiode (PD) doping profiles in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.5~\mu \text{m}$ </tex-math></inline-formula> CMOS image sensors with vertical transfer gates (VTGs) for the first time. Measurements and simulated results of various pitch generations are correlated to propose the most desirable PD doping conditions for <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.5~\mu \text{m}$ </tex-math></inline-formula> pixels which have not been developed yet. As a result, the ceiling position of the top PD doping significantly affects the image lag characteristics resulting in the lowest image lag when increasing the ceiling by 30% from the initial position. In conclusion, a fruitful guideline for photodiode design in 3D active pixel sensors is provided for optimization of FWC and image lag in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.5~\mu \text{m}$ </tex-math></inline-formula> pixel pitches. Also, this methodology associating potential curve analysis can be of potential use for development in ultra-small pixel pitches in the near future.

Analytical Modeling of Potential Barrier for Charge Transfer in Pinned Photodiode CMOS Image Sensors

A potential barrier is one of the most common lag sources for charge transfer in pinned photodiode (PPD) CMOS image sensors (CISs). In this article, an analytical model of the potential barrier is proposed for the PPD combined with the transfer gate (TG). Through detailed electrostatic analysis of the PPD and TG, the potential barrier is analytically expressed as a function of the doping concentrations, TG voltage, spatial dimensions, and other physical parameters. The proposed model is validated by technology computer-aided design (TCAD) simulations, and the results show that the model data are in good agreement with the TCAD simulations in terms of the magnitude and location of the potential barrier. The model can be used for the design, simulation, and optimization of PPD-based pixels in CISs to improve the charge transfer efficiency (CTE) and reduce the image lag noise.

A low-power high-quality CMOS image sensor using 1.5 V 4T pinned photodiode and dual-CDS column-parallel single-slope ADC

This paper presents a low-power high-quality CMOS image sensor (CIS) using 1.5 V 4T pinned photodiode (4T-PPD) and dual correlated double sampling (dual-CDS) column-parallel single-slope ADC. A five-finger shaped pixel layer is proposed to solve image lag caused by low-voltage 4T-PPD. Dual-CDS is used to reduce random noise and the nonuniformity between columns. Dual-mode counting method is proposed to improve circuit robustness. A prototype sensor was fabricated using a 0.11 µm CMOS process. Measurement results show that the lag of the five-finger shaped pixel is reduced by 80% compared with the conventional rectangular pixel, the chip power consumption is only 36 mW, the dynamic range is 67.3 dB, the random noise is only 1.55 e– rms, and the figure-of-merit is only 1.98 e–·nJ, thus realizing low-power and high-quality imaging.

Detailed Characterization of Short-Wave Infrared Colloidal Quantum Dot Image Sensors

Thin-film-based image sensors feature a thin-film photodiode (PD) monolithically integrated on CMOS readout circuitry. They are getting significant attention as an imaging platform for wavelengths beyond the reach of Si PDs, i.e., for photon energies lower than 1.12 eV. Among the promising candidates for converting low-energy photons to electric charge carriers, lead sulfide (PbS) colloidal quantum dot (CQD) photodetectors are particularly well suited. However, despite the dynamic research activities in the development of these thin-film-based image sensors, no in-depth study has been published on their imaging characteristics. In this work, we present an elaborate analysis of the performance of our short-wave infrared (SWIR) sensitive PbS CQD imagers, which achieve external quantum efficiency (EQE) up to 40% at the wavelength of 1450 nm. Image lag is characterized and compared with the temporal photoresponsivity of the PD. We show that blooming is suppressed because of the restricted pixel-to-pixel movement of the photo-generated charge carriers within the bottom transport layer (BTL) of the PD stack. Finally, we perform statistical analysis of the activation energy for CQD by dark current spectroscopy (DCS), which is an implementation of a well-known methodology in Si-based imagers for defect engineering to a new class of imagers.

Technical assessment of 2D and 3D imaging performance of an IGZO-based flat-panel X-ray detector.

Indirect detection flat-panel detectors (FPDs) consisting of hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) are a prevalent technology for digital x-ray imaging. However, their performance is challenged in applications requiring low exposure levels, high spatial resolution, and high frame rate. Emerging FPD designs using metal oxide TFTs may offer potential performance improvements compared to FPDs based on a-Si:H TFTs. This work investigates the imaging performance of a new indium gallium zinc oxide (IGZO) TFT-based detector in 2D fluoroscopy and 3D cone-beam CT (CBCT). The new FPD consists of a sensor array combining IGZO TFTs with a-Si:H photodiodes and a 0.7-mm thick CsI:Tl scintillator. The FPD was implemented on an x-ray imaging bench with system geometry emulating intraoperative CBCT. A conventional FPD with a-Si:H TFTs and a 0.6-mm thick CsI:Tl scintillator was similarly implemented as a basis of comparison. 2D imaging performance was characterized in terms of electronic noise, sensitivity, linearity, lag, spatial resolution (modulation transfer function, MTF), image noise (noise-power spectrum, NPS), and detective quantum efficiency (DQE) with entrance air kerma (EAK) ranging from 0.3 to 1.2 μGy. 3D imaging performance was evaluated in terms of the 3D MTF and noise-equivalent quanta (NEQ), soft-tissue contrast-to-noise ratio (CNR), and image quality evident in anthropomorphic phantoms for a range of anatomical sites and dose, with weighted air kerma, , ranging from 0.8 to 4.9 mGy. The 2D imaging performance of the IGZO-based FPD exhibited up to ∼1.7× lower electronic noise than the a-Si:H FPD at matched pixel pitch. Furthermore, the IGZO FPD exhibited ∼27% increase in mid-frequency DQE (1mm-1 ) at matched pixel size and dose (EAK ≈ 1.0 μGy) and ∼11% increase after adjusting for differences in scintillator thickness. 2D spatial resolution was limited by the scintillator for each FPD. The IGZO-based FPD demonstrated improved 3D NEQ at all spatial frequencies in both head (≥25% increase for all dose levels) and body (≥10% increase for ≤2 mGy) imaging scenarios. These characteristics translated to improved low-contrast visualization in anthropomorphic phantoms, demonstrating ≥10% improvement in CNR and extension of the low-dose range for which the detector is input-quantum limited. The IGZO-based FPD demonstrated improvements in electronic noise, image lag, and NEQ that translated to measurable improvements in 2D and 3D imaging performance compared to a conventional FPD based on a-Si:H TFTs. The improvements are most beneficial for 2D or 3D imaging scenarios involving low-dose and/or high-frame rate.

Theoretical investigation of the signal performance of HgI2 x-ray converters incorporating a Frisch grid structure at mammographic energies

Active matrix, flat-panel imagers (AMFPIs) suffer from decreased detective quantum efficiency under conditions of low dose per image frame (such as for digital breast tomosynthesis, fluoroscopy and cone-beam CT) due to low signal compared to the additive electronic noise. One way to address this challenge is to introduce a high-gain x-ray converter called particle-in-binder mercuric iodide (PIB HgI2) which exhibits 3–10 times higher x-ray sensitivity compared to that of a-Se and CsI:Tl converters employed in commercial AMFPI systems. However, a remaining challenge for practical implementation of PIB HgI2 is the high level of image lag, which is believed to largely originate from the trapping of holes. Towards addressing this challenge, this paper reports a theoretical investigation of the use of a Frisch grid structure embedded in the converter to suppress hole signal—which would be expected to reduce image lag. The grid acts as a third electrode sandwiched between a continuous top electrode and pixelated bottom electrodes having a 100 μm pitch. Signal properties of such a detector are investigated as a function of VDR (the ratio of the voltage difference between the electrodes in the region below the grid to that above the grid), grid pitch (the center-to-center distance between two neighboring grid wires) and R GRID (the ratio of grid wire width to grid pitch) for mammographic x-ray energies. The results show that smaller grid pitch suppresses hole signal to a higher degree (up to ∼96%) while a larger gap between grid wires and higher VDR provide minimally impeded electron transport. Examination of the tradeoff between maximizing electron signal and minimizing hole signal indicates that a grid design having a grid pitch of 20 μm with R GRID of 50% and 65% provides hole signal suppression of ∼93% and ∼95% for VDR of 1 and 3, respectively.

Analysis of Charge Transfer Potential Barrier in Pinned Photodiode of CMOS Image Sensors

The full well capacity (FWC) and the pinned photodiode (PPD) capacitance of four-transistor pixel in a CMOS image sensor are reported to be dependent on the potential barrier offered by transfer gate (TG). The asymmetrical TG channel potential increases the effective potential barrier, thereby increasing the FWC and decreasing the feedforward charges. At the PPD-TG interface, a potential pocket can exist, the influence of which is minimized to lower the image lag. In the presence of a potential pocket, two charge transfer potential barriers (CTPBs) are present in the charge transfer path. The combined effect of the two potential barriers is higher than the single barrier reported in the literature. The CTPB depends on the number of integrated PPD charges and influences the FWC and PPD capacitance. The improved PPD capacitance model matches well with the measurement results when the influence of potential pocket on CTPB is considered.

Development of a 3D Printed Dynamic Phantom for Assessing Image Lag in Fluoroscopy

Evaluating the visibility of stationary and moving objects is a requirement in Flat Panel Detector (FPD) systems, especially with fluoroscopy. One undesired phenomenon with dynamic fluoroscopic images is the potential artifact caused by image lag in the detector. Image lag is a delay known to degrade image quality. Therefore, it is an important factor in dynamic fluoroscopy. However, it is not routinely checked. Commercial phantoms by NEMA and LEEDS offer the use of rotatable objects to assess lag.

Characterization of Gas Electron Multiplier‐based detector for external beam radiation therapy dosimetry

Electronic portal imaging devices (EPIDs) are commonly installed on modern linear accelerators (LINACs) and are convenient for imaging and, potentially, dosimetry. However, owing to their construction with metal and scintillating layers of high atomic number, they exhibit nonwater-equivalent response and oversensitivity to low-energy photons. Therefore, EPIDs are not ideal for dosimetry purposes. Additionally, nonlinearities due to the combined use of scintillators and photodiodes have been reported. Here, an EPID which employs a variable gain Gas Electron Multiplier (GEM) and direct detection of electrons is introduced. To investigate its dosimetric performance, measurements characterizing the novel EPID are performed and compared with measurements from ionization chambers and conventional EPIDs. Linearity, dose rate dependence, field size dependence, off-axis response, and transmission response were measured for all available energy settings (6, 10, 6MV Flattening Filter Free (FFF) and 10MVFFF) using three different detector gain settings. Additionally, an evaluation of the ghosting and image lag of the panel was completed. Reference ionization chamber measurements were performed for the off-axis and transmission response and existing data for conventional EPIDs and ionization chambers from equivalent measurements were used for comparison of the field size dependence. Elsewhere, values from the linac monitoring chambers were used. In the range from 10 to 1000 Monitor Units (MU), the detector was linear within 1% for all combinations of gain settings and energies. The dose rate dependence was also within 1% for all energies and for two out of three gain settings. Regarding field size dependency, the ratio of ionization chamber and panel values was 0.94 and 0.98 for the conventional EPID and GEMini respectively, at 20×20cm2 and 10MV. For 6MV, 6MVFFF, and 10MVFFF these ratios were 0.97, 0.98, and 0.99 for the GEMini, and 0.95, 0.97, and 0.97 for the conventional EPID. Similar performance between the GEMini and conventional EPID is observed for field sizes smaller than 10×10cm2 . The transmission response was within 5% for all energies for thicknesses up to 30cm, compared to 10-20% for a conventional EPID. The off-axis response for shifts up to 16cm was within 1% and 3% for 6MV and 10MV, with and without phantom. The rise and fall of the signal from the detector correspond well to monitor chamber measurements indicating little ghosting and image lag, regardless of gain setting. The GEM EPID exhibits dose rate dependence and linearity within 1%, and negligible ghosting and image lag. In this regard, it performs particularly well using 50 and 250V of gain, and either could be chosen. For higher sensitivity, 250V is the recommended base gain setting, although other applications may warrant different gains. For most tests performed in this study, the GEM EPID demonstrates a more water-equivalent response than conventional EPIDs making GEMs a viable technology for dosimetry in radiation therapy.