This work provides comprehensive modeling for the bond length and angle distributions in random and spontaneously ordered ternary III-V alloys using empirical interaction potentials. The compounds InxGa1−xAs, GaAs1−xSbx, and InxGa1−xP were used as model systems due to their technological importance and the fact that ordered structures were observed experimentally in these materials. For random alloys, we reproduce the bimodal bond length distribution, which allows linear fits with slopes between 0.087 Å and 0.1059 Å for all bond types. The calculated values for dilute compositions slightly deviate from these functions, causing stronger deformations. In the case of CuPt-ordered structures, the bond length distribution is shown to collapse to four sharp peaks with an area ratio of 1:3:3:1, which originate from a different atom to atom distance within the different (111) planes and perpendicular to these. An essential consequence of this atomic arrangement is the different spacings for the different stacked binaries along the (111) direction, which also leads to strain values up to −0.819% for In0.5Ga0.5P and −1.827% for GaAs0.5Sb0.5. Furthermore, the broad bond angle distributions of random alloys collapse into two peaks for CuPt-like structures. On the other hand, CuAu-type ordering is shown to lead to a sharp bimodal bond length distribution but with five different groups of bond angles, which can be identified with the different atomic configurations in ternary zincblende crystals.