III-V Compound Research Articles

Tellurium Doped p-n Device Fabrication by Thermal Diffusion on GaSb-VDS-Substrate

The III-V compound semiconductors exhibit the advantage of wide bandgap and high electron mobility, making them appropriate for optoelectronics and microelectronics sector. Vertical directional solidification (VDS) is a technique developed to grow the high quality III-V semiconducting bulk crystals. One of the Sb based III-V materials, Gallium Antimonide (GaSb) was grown by VDS. This direct band gap semiconductor was realized as a ρ-type substrate and thermally diffused in vacuum by Tellurium(Te) ions as n-type dopant to fabricate ρ-n junction. Fabrication of successful ρ-n junction was confirmed by its electrical behaviour. It was later subjected to furnace annealing in vacuum at 200°C and 400°C for dopant to compensate deep in crystal geometry. Rectification characteristics of this junction were distinctly sharp for either biasing. It is revealed that rectification was approaching to optimum ideality factor (1-2) after vacuum furnace annealing at higher temperature. This device exhibits an applicability for NIR sensing close to 1.7µm.

Current-induced spin polarization and spin Hall effect in III-V compounds two-dimensional materials

Current-induced spin polarization and spin Hall effect in III-V compounds two-dimensional materials

The impact of cooling rate on the structure and properties of VGF-InP single crystals

InP is a III-V compound semiconductor with a zinc-blende crystal structure, widely used in optical communications, high-frequency millimeter-wave devices, optoelectronic integrated circuits, and solar cells. During the growth of VGF-InP single crystals, defects such as twinning, dislocations, and polycrystals are prone to occur. Experimental research on the cooling rate, an important control condition during the growth process, was conducted. By analyzing a large amount of discrete cooling data from the premium InP production and using spherical fitting algorithms for numerical analysis, the optimal cooling curve was obtained. Forward and reverse experimental verification results show that by adjusting the cooling rate at each growth stage, the recurrence of twinning and dislocations was successfully improved. Increasing the cooling rate during the shouldering process helps suppress intrinsic twinning but tends to increase dislocation density during the equal diameter stage process, leading to dislocation proliferation. Therefore, while increasing the cooling rate during shouldering, it is necessary to appropriately reduce the cooling rate during the equal diameter stage process to effectively suppress dislocation proliferation. By precisely controlling the temperature gradient and cooling rate inside the furnace, the thermal field conditions during the crystal growth process can be optimized, significantly improving the quality of InP single crystals.

Indirect-to-direct bandgap transition in GaP semiconductors through quantum shell formation on ZnS nanocrystals

Although GaP, a III-V compound semiconductor, has been extensively utilized in the optoelectronic industry for decades as a traditional material, the inherent indirect bandgap nature of GaP limits its efficiency. Here, we demonstrate an indirect-to-direct bandgap transition of GaP through the formation of quantum shells on the surface of ZnS nanocrystals. The ZnS/GaP quantum shell with a reverse-type I heterojunction, consisting of a monolayer-thin GaP shell grown atop a ZnS core, exhibits a record-high photoluminescence quantum yield of 45.4% in the violet emission range (wavelength = 409 nm), validating its direct bandgap nature. Density functional theory calculations further reveal that ZnS nanocrystals, as the growth platform for GaP quantum shells, play a crucial role in the direct bandgap formation through hybridization of electronic states with GaP. These findings suggest potential for achieving direct bandgaps in compounds that are constrained by their inherent indirect energy gaps, offering a strategy for tailoring energy structures to significantly improve efficiencies in optoelectronics and photovoltaics.

InP/LiNbO3 Covalent Heterointerface Construction via an Asymmetric Plasma Activation Strategy for Hybrid Integrated Quantum Systems.

Lithium niobate (LiNbO3) is emerging as an appealing candidate for integrated optical applications with enhanced complexity, owing to its inherent abundant optoelectronic properties. To compensate for the inability of LiNbO3 to generate indistinguishable single photons, the evanescent coupling heterointerface constructed between III-V compound semiconductors (e.g., InP) and LiNbO3 through plasma activation provides a feasible solution for balancing the integration efficiency and interfacial stability while achieving sub-50 nm alignment accuracy between devices, thus offering ultracompact on-chip light sources for classical optoelectronics and quantum optics. However, a challenge remains in the formation of the InP/LiNbO3 platform due to the huge mismatch in the coefficient of thermal expansion. Here, we demonstrate the InP/LiNbO3 covalent heterointerface using an asymmetric plasma activation strategy. Different plasmas are used for the activation of InP and LiNbO3 specifically, balancing the enhancement of surface functional group density with the avoidance of defect generation effectively. More importantly, combined with surface comprehensive characterizations and interface performance, we determine that the introduction of ammonia solution enables the surface hydroxyl groups to be "effective" as LiNbO3 surface relaxation increases the chance of -OH groups' contact. Therefore, a robust covalent bond network is established across the InP/LiNbO3 interface at 80 °C with an enhanced bonding strength of 9.7 MPa. Moreover, a hybrid quantum photonic chip based on the InP/LiNbO3 platform is designed to compute the coupling efficiency and the impact of misalignment on it, demonstrating the potential of extending the platform to hybrid integrated quantum systems.

Effect of cap layer and post growth on-site hydride passivation on the surface and interface quality of InAsP/InP hetero and QW structures

The performance of devices made from III-V compound semiconductors relies heavily on their surface and interface properties. The InAsP/InP material system is recently gaining interest due to its suitability for the next generation of long-haul classical and quantum communication applications. Researchers are studying how surface and interface properties affect the efficiency of the device and concludes that the epitaxial growth conditions responsible for creating surface and interface states require further improvement. To address this, we have studied the effect of the top (cap) layer and post-growth on-site hydride passivation on the properties of InAsP/InP hetero-structures grown using metal-organic vapor phase epitaxy technique. The flow rate and flux ratios of the hydrides significantly affect the surface reaction rates and gas-phase diffusion coefficients, which in turn impact the As↔P exchange mechanisms. Our findings suggest that post-growth on-site arsine passivation encourages the As↔P substitutions at the vicinity of the desorption sites of phosphorus, leading to the arsenic-rich surface of InAsP with the diffused hetero-interfaces. The activation energy for such As↔P exchange reaction mechanism is evaluated as ∼ (1.4 ± 0.3) eV. On the other hand, it has been observed that the thin cap layer of InP protects the surface of the InAsP epilayer and thereby preserving the sharp interface. Further, surface photovoltage and photoluminescence spectroscopy is employed to examine the role of the diffused and sharp interface of InAsP/InP hetero-structures in charge carrier transport, their redistribution and recombination process. Our analysis of the energy transitions occurring in the surface photovoltage and photoluminescence spectrum reveal that the energy band alignment and the subsequent charge carrier redistribution processes is influenced by the surface and interface states. These changes in the surface photovoltage phase spectra of InAsP/InP system also support the role of surface and interface states in the generation and separation of the charge carriers. The study provides insights into the effects of As↔P exchange on surface and interfacial quality, highlighting the implications for optoelectronic device development using InAsP/InP material system.

Direct Calculations of the Dielectric and Optical Parameters of Some Compound Semiconductors: A Study Using the Lorentz Oscillator and Wemple-DiDomenico Models

The Lorentz single oscillator model is widely utilized to describe the electron-phonon interaction in solids. The use of this model to calculate the dielectric function and optical parameters of compound semiconductors represents a novel approach in materials science which may lead to develop new materials with tailored optical properties and consequently can offer vast applications in areas such as quantum computing and quantum information processing. This work presents direct calculations of the complex dielectric function and some optical parameters, such as refractive index, extinction coefficient, and reflectivity for some selected III-V and II-VI compound semiconductors using Lorentz oscillator model. The dielectric and optical dispersion parameters among the infrared and visible electromagnetic spectra follows the so-called Transmission-Absorption-Reflection-Transmission (TART) trend. The TART curve provides information about how a material interacts with light at different wavelengths, which is crucial for understanding and optimizing various optoelectronic devices. Moreover, dielectric loss functions such as loss tangent, surface energy loss function and volume energy loss function are investigated. The refractive index dispersion is analyzed using Wemple–DiDomenico single effective oscillator model and Sellmeier equation. The energy of the effective single oscillator (Eo) and the dispersion energy (Ed) are estimated.

Indium Phosphide Single Crystal Furnace Cooling Crystallization Temperature Control Model Research.

Indium phosphide (InP) single crystals, as key III-V compound semiconductor materials, play an irreplaceable role in various fields, such as optical communication and microwave millimeter-wave communication. Vertical gradient freeze (VGF) has become one of the main methods for industrial production of InP single crystals due to its advantages in temperature gradient control. However, defects such as twins and dislocations are easily generated during the production of InP single crystals by the VGF method. Through an in-depth study of the thermal field during the growth of InP single crystals, it is found that the cooling rate of the thermal field during single crystal growth is crucial and is closely related to the generation of twins, dislocations, and polycrystallization defects. Therefore, constructing a cooling model based on temperature control and the quality of InP single crystals has a positive driving effect on improving the yield of single crystal products. In this paper, by establishing a thermal field model of an InP single crystal furnace produced by the VGF method, the characteristics of temperature variation are analyzed in depth. Subsequently, numerical analysis of discrete cooling data during the cooling crystallization process is conducted, considering the quality of the InP single crystal growth. Combined with the spline regression algorithm, the optimal cooling model is fitted. Through positive and reverse experiment verification, the model shows significant effects in controlling internal stress in the crystal and reducing defect generation. Based on this model, we have successfully achieved effective suppression of defects, such as twins and dislocations, thereby significantly improving the quality of InP single crystals. This research not only provides a solid theoretical basis for the production of InP single crystals but also provides strong support for experimental applications.

Optimizing TCAD Model and Temperature-Dependent Analysis of Pt/AlN Schottky Barrier Diodes for High-Power and High-Temperature Applications

This research presents a comprehensive investigation and optimization of the Pt/AlN Schottky Barrier diode (SBD) using technology computer-aided design (TCAD) modeling. The study explores the electrical characteristics of AlN SBDs with various metal contacts, including Aluminum (Al), Silver (Ag), Tungsten (W), Gold (Au), Nickel (Ni), and Platinum (Pt). Through the comparative analyses of different metal/AlN Schottky contacts, the Pt/AlN structure emerges as the most promising due to its superior barrier height and lower leakage current. At [Formula: see text]K, the diode demonstrates a barrier height of 2.72[Formula: see text]V, a nearly ideal leakage current of 0.046[Formula: see text]pA, and a breakdown voltage of 363[Formula: see text]V. The research extends to examining the temperature-dependent electrical behavior of Pt/AlN Schottky diodes, particularly for high-power and high-temperature applications. Analysis carried out across temperatures ranging from [Formula: see text]K to [Formula: see text]K reveals a trend of increasing ON resistance and consistently lower leakage current with rising temperature. Importantly, the study indicates that the impact of temperature on the barrier height and breakdown voltage of the diode is negligible, thus rendering it suitable for high-temperature operation. Leveraging the unique properties of AlN as an ultra-wide bandgap material within the III-V compound semiconductor family, this research provides valuable insights into the potential applications of Pt/AlN Schottky contact. The study highlights that the Pt/AlN Schottky contact is effective not only for high-power, high-temperature SBDs but also as superior metal/semiconductor gate contacts for field-effect transistors (FETs). Their suitability is attributed to their ability to handle high voltages, minimize reverse leakage current, and demonstrate improved thermal stability.

Synthesis and Tuning of Electronic, Optical, and Photoelectrochemical Properties of Copper Metavanadate Alloys via Alkaline Earth Metal Substitution

Unlike the well-studied and technologically advanced Group III-V and Group II-VI compound semiconductor alloys, alloys of ternary metal oxide semiconductors have only recently begun to receive widespread attention. Here, we describe the effect of alkaline earth metal substitution on the optical, electronic, and photoelectrochemical (PEC) properties of copper metavanadate (CuV2O6). As a host, the Cu-V-O compound family presents a versatile framework to develop such composition-property correlations. Alloy compositions of A0.1Cu0.9V2O6 (A = Mg, Ca) photoanodes were synthesized via a time and energy-efficient solution combustion synthesis (SCS) method. The effect of introducing alkaline earth metals (Mg, Ca) on the crystal structure, microstructure, electronic, and optical properties of copper metavanadates was investigated by powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), diffuse reflectance spectroscopy (DRS), transmission electron microscopy (TEM), and Raman spectroscopy. The PXRD, TEM, and Raman spectroscopy data demonstrated the polycrystalline powder samples to be mutually soluble, solid solutions of copper and alkaline earth metal metavanadates and not simple mixtures of these compounds. The DRS data showed a systematic decrease in the optical bandgap with Cu incorporation. These trends were corroborated by electronic band structure calculations. Finally, the PEC properties exhibited a strong dependence on the alloy composition, pointing to possible applicability in solar water splitting, heterogeneous photocatalysis, phosphor lighting/displays, and photovoltaic devices.

Switching it up: New mechanisms revealed in wurtzite-type ferroelectrics.

Wurtzite-type ferroelectrics have drawn increasing attention due to the promise of better performance and integration than traditional oxide ferroelectrics with semiconductors such as Si, SiC, and III-V compounds. However, wurtzite-type ferroelectrics generally require enormous electric fields, approaching breakdown, to reverse their polarization. The underlying switching mechanism(s), especially for multinary compounds and alloys, remains elusive. Here, we examine the switching behaviors in Al1-xScxN alloys and wurtzite-type multinary candidate compounds we recently computationally identified. We find that switching in these tetrahedrally coordinated materials proceeds via a variety of nonpolar intermediate structures and that switching barriers are dominated by the more-electronegative cations. For Al1-xScxN alloys, we find that the switching pathway changes from a collective mechanism to a lower-barrier mechanism enabled by inversion of individual tetrahedra with increased Sc composition. Our findings provide insights for future engineering and realization of wurtzite-type materials and open a door to understanding domain motion.

Metasurface absorber based single junction thin film solar cell exceeding 30% efficiency.

In this article, we report, as per our knowledge, for the first time, a thin film single junction solar cell with a metasurface absorber layer directly incorporated. We have used an interconnected dual inverted split ring resonator pattern in the InAsP absorber layer. The structure eliminated patterns of conventional metals, such as silver, aluminum, and gold, from the active layer, a common drawback in conventional solar absorbers, hindering their direct integration into solar cells. Optical simulation results show a peak ideal short circuit current density of 76.23mA/cm2 for the meta-absorber structure under solar illumination. This current is the highest among previously reported absorbers based on Group IV materials and III-V compounds, overcoming the low solar absorption of such metasurfaces. The final proposed solar cell structure combines this meta-absorber layer with traditional efficiency enhancement methods namely anti-reflecting coating, textured back reflector, and transparent top electrode. This novel single junction structure shows a solar absorption efficiency of 97.86% and a power conversion efficiency of 30.87%, the highest for III-V solar cells. Our device proves the ability of metasurface absorber layers to produce high-efficiency solar cells and is expected to pave the way for integrating novel meta-devices into state-of-the-art photovoltaic devices, aiding the global transition towards clean energy sources.

Design and Analyze the Effect of Hetero Material and Dielectric on TFET with Dual Work Function Engineering

Background: As the size of the field effect transistors is reduced down to nanometers, the performance of the devices is affected by various short-channel effects. To overcome these effects, various novel devices are used. Tunnel Field Effect Transistors (TFET) are novel devices in which the drain current needs to be improved. Gate engineering and III-V compound materials are proposed to improve the ON current and reduce the leakage current along with its ambipolar behaviour. Methods: The proposed device structure is designed with a heterojunction hetero dielectric dual material gate Tunnel Field Effect Transistor incorporating various combinations of III-V compound materials such as AlGaAsSb/InGaAs, InGaAs/Ge, InGaAs/InP and SiGe/Si. As in III-V composite materials like AlGaAsSb/InGaAs, the narrower bandgap at the source channel interface helps to improve the electric field across the junction. At the same time, the wider bandgap at the channel drain junction leads to unidirectional current flow, resulting in ambipolar reduction. 2D TCAD simulation is used to obtain the electrical parameters for Hetero junction TFETs and the comparison analysis of different Hetero device structures. Results: The device's electrical parameters, such as energy band diagram, current density, electric field, drain current, gate capacitance and transconductance, have been simulated and analyzed. Besides, the dual material used in the gate, such as Metal1 (M1) and Metal2 (M2), along with HfO2/SiO2 stacked dielectric, helps improve the gate controllability over the channel and the leakage current reduction. Conclusion: An ION=10-1A/μm, IOFF = 10-12A/μm at drive voltage 0.5V is obtained for InGaAs/InP layer at the source channel hetero junction TFET, and ION=10-2A/μm, IOFF =10-14A/μm at drive voltage 0.5V is obtained for SiGe/Si layer at the source channel hetero junction TFET. Therefore, the InGaAs/InP and SiGe/Si layer TFET are more suitable for ultra-low power integrated circuits.

Nonequilibrium thermal resistance of interfaces between III-V compounds

Nonequilibrium thermal resistance of interfaces between III-V compounds

Ballistic transport in sub-10 nm monolayer InAs transistors for high-performance applications.

As an outstanding two-dimensional (2D) semiconductor among III-V compounds, InAs has attracted significant attention due to its much higher electron mobility than silicon and potential for enhanced opportunities in the field of electronic and optical devices. Recently, 2D semiconducting InAs with a thickness of 4.8 nm has been successfully prepared. Here, we systematically investigated the ballistic transport characteristics of sub-10 nm monolayer InAs (InAsH2) metal-oxide-semiconductor field-effect transistors (MOSFETs) by using ab initio quantum transport simulation, which includes on-state current, subthreshold swing, intrinsic delay time, and power consumption. The results suggest that the monolayer (ML) InAsH2 MOSFETs exhibit excellent performance with a beneficial doping concentration and underlap, which can meet the high-performance requirements of the International Technology Roadmap for Semiconductors (ITRS) for the 2013 version until the length of the gate is decreased to 4.0 nm. Moreover, we studied the influence of high-k dielectric effects. We found that both the on-state current and subthreshold swing with a 5.0 nm-gate-length are apparently improved. This work indicates that ML InAsH2 is a suitable nominee for the upcoming generation of channel materials.

Metal-assisted chemical etching beyond Si: applications to III-V compounds and wide-bandgap semiconductors.

Metal-assisted chemical etching (MacEtch) has emerged as a versatile technique for fabricating a variety of semiconductor nanostructures. Since early investigations in 2000, research in this field has provided a deeper understanding of the underlying mechanisms of catalytic etching processes and enabled high control over etching conditions for diverse applications. In this Review, we present an overview of recent developments in the application of MacEtch to nanomanufacturing and processing of III-V based semiconductor materials and other materials beyond Si. We highlight the key findings and developments in MacEtch as applied to GaAs, GaN, InP, GaP, InGaAs, AlGaAs, InGaN, InGaP, SiC, β-Ga2O3, and Ge material systems. We further review a series of active and passive devices enabled by MacEtch, including light-emitting diodes (LEDs), field-effect transistors (FETs), optical gratings, sensors, capacitors, photodiodes, and solar cells. By reviewing demonstrated control of morphology, optimization of etch conditions, and catalyst-material combinations, we aim to distill the current understanding of beyond-Si MacEtch mechanisms and to provide a bank of reference recipes to stimulate progress in the field.

Effect of electron irradiation on perovskite films and devices for novel space solar cells

Perovskite solar cells (PSCs) are considered as one of the strong contenders for next-generation space solar cells due to their advantages of high efficiency, low cost, high specific power, and remarkable irradiation resistance compared with those of silicon-based and III-V compound solar cells. At present, one focuses on the irradiation effects of perovskite solar cells, but there are a few studies on the irradiation damage mechanism of the core perovskite film. To advance the spatial application of perovskite solar cells, this study conducts a comprehensive examination of the performance fluctuations exhibited by mixed-cation perovskite films and solar cells under electron irradiation. Initially, the Monte Carlo method is employed to simulate and predict the effect of electron irradiation on perovskite solar cells. Subsequently, in conjunction with the microstructure characterization and the comparison of optical/electrical performance of perovskite films before and after irradiation, the irradiation damage mechanism of film is elucidated and the electron irradiation reliability of perovskite solar cells is evaluated. The research demonstrates that mixed-cation perovskite film and solar cells exhibit outstanding resistance to electron irradiation. Even when exposed to 100 keV electron irradiation with a cumulative fluence of 5×10<sup>15</sup> e·cm<sup>–2</sup>, the PSCs maintain an average power conversion efficiency of 17.29%, retaining approximately 85% of their initial efficiency. This study provides sound theoretical and experimental evidence for designing the irradiation-resistant reinforcement of new-generation space solar cells, contributing to the improvement of their operational performance and reliability in space applications.

A study on the Si1-xGex gradual buffer layer of III-V/Si multi-junction solar cells based on first-principles calculations.

III-V/Si multi-junction solar cells have been widely studied in recent years due to their excellent theoretical efficiency (∼42%). In order to solve the problem of lattice mismatch between Si and III-V compounds of III-V/Si solar cells, different hexagonal Si1-xGex buffer layer models on the surface of hexagonal diamond Si(001) were built, and the structural, electronic and optical properties of the proposed models were calculated based on first principles calculations. The results showed that all models of the designed buffer layer could effectively reduce the lattice mismatch, and the buffer layer hex-Si1-xGex (x = 0, 0.75, and 1) is the ideal model and has achieved the best lattice-matching improvement with high defect formation energy, as well as direct band gap properties and a larger light adsorption coefficient. These theoretical models, with their analyzed properties, could offer a promising pathway toward realizing high efficiency and low cost III-V/Si multi-junction solar cells.

Topological corner states in a silicon nitride photonic crystal membrane with a large bandgap.

The theory of band topology has inspired the discovery of various topologically protected states in the regime of photonics. It has led to the development of topological photonic devices with robust property and versatile functionalities, like unidirectional waveguides, compact power splitters, high-Q resonators, and robust lasers. These devices mainly rely on the on-chip photonic crystal (PhC) in Si or III-V compound materials with a fairly large bandgap. However, the topological designs have rarely been applied to the ultra-low-loss silicon nitride (SiN) platform which is widely used in silicon photonics for important devices and integrated photonic circuits. It is mainly hindered by the relatively low refractive index. In this work, we revealed that a rhombic PhC can open a large bandgap in the SiN slab, and thus support robust topological corner states stemming from the quantization of the dipole moments. Meanwhile, we propose the inclination angle of rhombic lattice, as a new degree of freedom, to manipulate the characteristics of topological states. Our work shows a possibility to further expand the topological protection and design flexibility to SiN photonic devices.

Effect of Adhesion Layer at the Pt/TiO2 Interface on the Degradation Pathways of TiO2-Protected III-V Water-Splitting Photocathodes

Photoelectrochemical (PEC) water splitting has been identified as a promising route towards the production of green hydrogen as a solar fuel to meet the global energy demands [1]. Highly efficient photoelectrodes made of III-V compounds are promising candidates to reach the goal of >15% solar-to-hydrogen efficiency [2]. However, the main bottle neck of these materials is their poor stability in direct contact with acidic electrolytes, which is needed to ensure efficient mass transport and an efficient hydrogen evolution reaction (HER). Atomic layer deposited (ALD) titanium dioxide (TiO2) is commonly utilized as a protective layer to shield the absorber from the electrolyte [3]. To reduce HER overpotentials, the TiO2 film needs to be modified with a catalyst layer. In a demonstration of a TiO2 protected III-V PEC device, Cheng et al. proposed that the detachment of the catalyst layer induced the degradation of the protective TiO2 film in a pH 0 electrolyte which eventually led to the corrosion of the photoabsorber [4].In this work, GaInP/GaAs/Ge photocathodes for water reduction were protected with ALD TiO2 layers deposited from tetrakis(dimethylamido)titanium (TDMAT) and water precursors with varying thicknesses. A 2 nm catalytic Pt layer was deposited via electron beam evaporation (EBE) to reduce the overpotential of the HER. The conformal coverage of the absorber with TiO2 was confirmed with atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). None of the TiO2 films were able to stabilize the illuminated III-V electrodes for 60 min at 0 V versus the counter electrode (CE) in a pH 0 electrolyte (1 M H2SO4). Characterization of the electrochemical potential at the electrode’s front side revealed an unstable regime for the TiO2 protection layer. ICP-MS of the electrolytes, SEM/EDX and electrochemical analyses revealed the detachment of the catalytic Pt layer that led to the dissolution of the TiO2 and the III-V degradation (Figure 1A). The adhesion of Pt on TiO2 was improved by depositing a 2 nm Ti layer via EBE at the Pt/TiO2 interface (Figure 1B). The adhesion layer acts as a wetting layer for Pt, reducing the nucleation energy barrier and increasing the number of nucleation sites compared to Pt/TiO2. The enhanced wetting is due to the formation of Ti−Pt chemical bonds [5] and the overpotential @ 10 mA/cm2 to perform HER was 60 mV, similar to that of a pristine EBE Pt layer. The Ti layer greatly improves the stability of TiO2/III-V photoelectrodes, confirming the results of Cheng et al. and illustrating the importance of a stable catalyst layer.Figure 1. A) SEM micrograph of degradation of Ge/GaAs/GaInP/TiO2/Pt photocathode after 60 min. of photocurrent measurements at 0 V vs. CE in 1 M H2SO4. B) Accelerated stability test in dark for 2 nm Pt/15 nm TiO2 on FTO with (red curve) and without (black curve) a 2 nm Ti adhesion layer in between the Pt and TiO2 layers.