Novel conversion annealing pretreatment for improved deposition of diamond coatings onto WC-Co cemented carbide

In this study, diamond coatings were deposited through the hot filament chemical vapor deposition method on cemented carbide under different methane concentrations, ranging from 1% to 5%, to analyze the performance of the diamond coatings under different loads and lubrication conditions . Friction and wear tests were carried out using ball-disk friction and wear tester under different loads and lubrication conditions. Scanning electron microscopy, high-resolution Raman spectrometry, optical microscopy, and a surface profiler were used to observe the surface morphology and quality of the coatings after the wear test. The results revealed that the coating prepared under 3% methane concentration was more stable during the friction test than that prepared under other methane concentrations. In addition, the coating prepared under 5% methane concentration had poor adhesion and experienced failure under excessive load. Furthermore, lubricating the friction surface with water effectively reduced the formation of abrasive wear and the friction coefficient, and thus the sample reached the stable stage faster. In addition, the wear rate of the coating under wet condition was approximately 4–5 times less than that under dry friction conditions.

Superior tolerance of nanocrystalline diamond films to Heavy-ion Irradiation: Maintenance of solid lubrication properties

Diamond is a promising alternative capsule material for direct-drive inertial confinement fusion. Previous investigations suggest that the stiffness and higher density of diamond can mitigate laser imprinting, which is an initial perturbation on the ablation surface caused by non-uniform laser irradiation. We conduct diamond capsule fabrication using the hot filament chemical vapor deposition (HF-CVD) technique. This technique is the most suitable diamond deposition method in terms of mass production, since the deposition area can be easily extended just by increasing the number of hot filaments. This paper presents the first direct-drive implosion experiment concerning diamond capsules fabricated using the HF-CVD technique. The compression of thin diamond capsules, with an inner capsule diameter of 482 μm and a shell thickness of 1.6 μm, is successfully achieved, and the implosion trajectory of diamond capsules, with the same diameter and thickness, is consistent with 1D radiation hydrodynamic simulation calculations. However, for diamond capsules with an inner diameter of 482 μm and a shell thickness of 2.4 μm, asymmetry of the implosion trajectory and unexpected x-ray emission are observed. This is attributed to the remaining silicon (Si) mold inside the capsule left over from the fabrication process, revealing that the etching method of Si in diamond capsules should be improved.

Enhanced nucleation and large-scale growth of CVD diamond via surface-modification of silicon-incorporated diamond-like carbon thin films

The polycrystalline diamonds were synthesized on n-type single crystalline Si wafer by Hot Filament CVD method. The structural properties of the obtained diamond films were checked by X-ray diffraction and Raman spectroscopy. The conductivity of n-Si/p-diamond, sandwiched between two electrodes, was measured in the temperature range of 90–300 K in a closed cycle cryostat under vacuum. In the temperature range of (200–300 K), the experimental data of the conductivity were used to obtain the activation energies E which comes out to be in the range of 60–228 meV. In the low temperature region i.e., below 200 K, the conductivity increases very slowly with temperature, which indicates that the conduction occurs via Mott variable range hopping in the localized states near Fermi level. The densities of localized states in diamond films were calculated using Mott’s model and were found to be in the range of to depending on the diamond’s surface hydrogenation level. The Mott’s model allowed estimating primal parameters like average hopping range and hopping energy. It has been shown that the surface hydrogenation may play a crucial role in tuning transport properties.

Study of deposition diamond to fill pores on cobalt removal surface adopting HFCVD method

In this work, the structural, optical, morphological, and sensing features of tungsten oxide (WO3) thin film deposited on a silicon substrate via hot-filament chemical vapor deposition (HFCVD) are described. The experimental characterization tools, such as X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), ultraviolet-visible (UV-Vis), and Fourier transform infra-red (FTIR) spectroscopies, etc., were used to determine the properties of WO3 NPys thin films. The grown WO3 thin film illustrated closely packed porous pyramidal nanostructures (NPys) of improved grain size properties. The diffraction analysis revealed (100) and (200) of WO3 phases, suggesting the classic monoclinic crystal WO3 structure. HFCVD grown WO3 NPys thin film was employed as electro-active electrode for detecting ethylenediamine in 10 mL of 0.1 M phosphate buffer solution (PBS) by varying the ethylenediamine concentrations from 10 μM to 200 μM at room temperature. With a detection of limit (LOD) of ~9.56 μM, and a quick reaction time (10 s), the constructed chemical sensor achieved a high sensitivity of ~161.33 μA μM−1 cm−2. The durability test displayed an excellent stability of electrochemical sensor by maintaining over 90% sensitivity after 4 weeks of operation. This work provides a strategy for a facile preparation of WO3 NPys thin film electrode for sensor applications.

Oxidation behavior of trivalent chromium ions on boron-doped diamond electrodes

Microstructured films of undoped zinc oxide (ZnO) and ZnO doped with nickel (ZnO:Ni) were grown by hot filament chemical vapor deposition (HFCVD) technique on Si (100) substrates at 500 °C. Pellets of ZnO and ZnO:NiO as oxidant agenst were used. A shift to the right around 0.17 degree of the X-Ray Diffraction pattern of the ZnO:Ni film was observed with respect to undoped ZnO films. Morphologically by Scanning Electron Microscopy was noticed a Core-Shell type growth in ZnO undoped and a nanostructured type (Nano-wire) in ZnO doped with Ni. Photoluminescence measurements showed an increase in the intensity of the green emission band of ZnO:Ni. It was attributed to defects of oxygen vacancies (VO), zinc vacancies (VZn), zinc interstitials (Zni), oxygen interstitials (Oi), and oxygen vacancies complex (VO complex) in the structure of the film. The incorporation of Ni atoms in the ZnO structure stresses the crystal lattice, leaving behind a large number of surface defects that increase the emission of PL.

Microstructured films of undoped zinc oxide (ZnO) and ZnO doped with nickel (ZnO:Ni) were grown by hot filament chemical vapor deposition (HFCVD) technique on Si (100) substrates at 500 °C. Pellets of ZnO and ZnO:NiO as oxidant agenst were used. A shift to the right around 0.17 degree of the X-Ray Diffraction pattern of the ZnO:Ni film was observed with respect to undoped ZnO films. Morphologically by Scanning Electron Microscopy was noticed a Core-Shell type growth in ZnO undoped and a nanostructured type (Nano-wire) in ZnO doped with Ni. Photoluminescence measurements showed an increase in the intensity of the green emission band of ZnO:Ni. It was attributed to defects of oxygen vacancies (VO), zinc vacancies (VZn), zinc interstitials (Zni), oxygen interstitials (Oi), and oxygen vacancies complex (VO complex) in the structure of the film. The incorporation of Ni atoms in the ZnO structure stresses the crystal lattice, leaving behind a large number of surface defects that increase the emission of PL.

This study investigated the effect of boron-doped and undoped diamond coatings on the cutting performance of cobalt cemented tungsten carbide (WC-Co) drills when drilling CFRP. Three types of diamond coating, as boron-doped microcrystalline (B-MCD), boron-doped nanocrystalline (B-NCD), and undoped nanocrystalline (NCD), were deposited on specially designed for drilling of CFRP one-shot drills by the hot filament chemical vapor deposition (HFCVD) method. The coating characteristics, such as surface morphology, roughness, carbon structure, and interfacial adhesion, were investigated. Then cutting tests were carried out, and the tool’s flank wear, thrust force, and torque were evaluated. For comparison of cutting performance, non-coated WC-Co drills were used in the tests as well. Furthermore, drilled holes were inspected in terms of peel-up and push-out delamination. According to the results, the B-MCD coated drill presented advantages in tool life, and quality of drilled holes over the NCD and B-NCD coated drills. Also, the results confirmed the adhesion enhanced effect of diamond coating to WC-Co substrate through boron doping of the layer.

By using a methane and hydrogen process gas mixture in an appropriate hot-filament CVD process without further dopant, high electrical conductivity of over 100 S/cm has been achieved in nanocrystalline diamond films deposited on silicon single-crystalline substrates. Furthermore, it was found that an oxygen reactive-ion etching process (O-RIE) can improve the diamond film surface’s electron affinity, thus reducing the specific contact resistance. The reduction of the specific contact resistance by a factor of up to 16 was realized by the oxygen ion etching process, down to .We provide a qualitative explanation for the mechanism behind the contact resistance reduction in terms of the electron affinity of the diamond surface. With the aid of XPS, AFM, and surface wetting measurements, we confirmed that a higher surface electron affinity is responsible for the lower specific contact resistance of the oxygen-terminated nanocrystalline diamond films.

A hot filament chemical vapor deposition (HFCVD) method was adopted to deposit diamond films at deposition pressures ranging from 2-6 kPa. The effects of deposition pressure on the deposition rate, phase structure, and microstructure of diamond films were investigated. The surface morphology, grain size, micro-structure, and growth rate of the diamond films were analyzed using scanning electron microscopy, X-ray diffraction (XRD), and Raman spectrometry. The experimental results showed that granules on the surface exhibited increasingly compact structure with increasing deposition pressure. The diamond films deposited at various pressures have good compactness, and the particles on the film surfaces are arranged in an ordered manner. All films exhibited orientation along the (111) plane, which was the significant characteristic XRD peak of each diamond film. The (111) peak intensity was the strongest for the film prepared at 2 kPa deposition pressure. Overall, the deposition rate and grain size decreased with increasing deposition pressure, provided other deposition conditions remained unchanged. However, the densification of the microstructure and the nucleation density increased with increasing deposition pressure. Secondary nucleation became more pronounced as deposition pressure increased, and grain size decreased as nucleation density increased.

To improve the growth rate of diamond films, we grew single-crystalline (100) diamond films by hot-filament chemical vapor deposition (HFCVD), and investigated their growth mechanism. The methane/hydrogen concentration (CH4/H2) dependence of the growth rate was evaluated at a filament temperature of 3000 °C. The growth rate reached 17.9 μm/h at CH4/H2 = 5% and saturated at higher CH4/H2. We then investigated the filament-temperature dependence of the CH4 reaction rate at CH4/H2 = 5% (at which the methane supply is sufficient). The growth rate decreased with inverse filament temperature, indicating that the growth rate is governed by reactions on the filament surface. From the Arrhenius plot, the activation energy of diamond growth was estimated as 440 kJ/mol, close to that of CH4 → CH3⁎ + H⁎ decomposition. This result indicates that decomposition of CH4 and the formation of CH3 by the filament surface affect the growth rate of HFCVD-grown diamond.

Laser cladding of vanadium carbide interlayer for CVD diamond growth on steel substrate

Investigation for conductance behavior of single walled carbon nanotubes decorated with UNCD and graphitic spherules using STM/STS

A novel growth model for depositing ultrananocrystalline diamond films in CH4/H2 chemistry

Chemical vapor deposition diamond dental burs for high speed air turbine handpieces

Single-crystal diamonds in the form of micrometer-scale pyramids were produced using a combination of hot-filament (HF) chemical vapor deposition (CVD) and thermal oxidation processes. The diamond pyramids were compared here with similar ones that were manufactured using plasma-enhanced (PE) CVD. The similarities revealed in the morphology, Raman, and photoluminescent characteristics of the needles obtained using the hot-filament and plasma-enhanced CVD are discussed in connection with the diamond film growth mechanism. This work demonstrated that the HF CVD method has convincing potential for the fabrication of single-crystal diamond needles in the form of regularly shaped pyramids on a large surface area, even on non-conducting substrates. The experimental results demonstrated the ability for the mass production of the single-crystal needle-like diamonds, which is important for their practical application.