High PNP Research Articles

Exploring the potential mechanism of Radix Bupleuri in the treatment of sepsis: a study based on network pharmacology and molecular docking

AimTo explore, using network pharmacology and RNA-seq technologies, potential active targets and mechanisms underpinning Radix Bupleuri’s effectiveness during sepsis treatment.MethodsFollowing the Sepsis-3.0 criteria, the research cohort, comprising 23 sepsis patients and 10 healthy participants, was obtained from public databases. Peripheral blood samples were collected and subjected to RNA-seq analysis. Active ingredients and potential targets of Radix Bupleuri were identified using the Bioinformatics Analysis Tool for Molecular mechANism of Traditional Chinese Medicine 2.0 (BATMAN-TCM 2.0) database and TCMSP database. Subsequently, protein-protein interaction (PPI) network construction, Gene Ontology (GO) analysis, and Kyoto Encyclopedia of Genes and Genomes (KEGG) pathway enrichment analysis were conducted to explore cross-targets between disease and drugs. Survival analysis of key targets was performed using the GSE65682 dataset, and single-cell RNA-seq was employed for cellular localization analysis of key genes. Finally, molecular docking and Molecular dynamics simulation of the core target was conducted.ResultsDifferential expression analysis revealed 4253 genes associated with sepsis. Seventy-six active components and 1030 potential targets of Radix Bupleuri were identified. PPI, GO, and pathway enrichment analyses indicated involvement in the regulation of transmembrane transport, monatomic ion transport, and MAPK signaling. Survival curve analysis identified PIK3CD, ARRB2, SUCLG1, and SPI1 as key targets associated with lower mortality in the high expression group, while higher mortality was observed in the high PNP and FURIN expression groups. Single-cell RNA sequencing unveiled the cellular localization of PIK3CD, PNP, SPI1, and FURIN within macrophages, while ARRB2 and SUCLG1 exhibited localization in both macrophages and T-cells. Subsequent molecular docking and Molecular dynamics simulation indicated a potential binding interaction for Carvone-PIK3CD, Encecalin-ARRB2, Lauric Acid-SUCLG1, Pulegone-FURIN, Nootkatone-SPI1, and Saikogenin F-PNP.ConclusionRadix Bupleuri could modulate immune function by affecting PIK3CD, ARRB2, SUCLG1, FURIN, SPI1, and PNP, thereby potentially improving the prognosis of sepsis.

Design of PNP SiGe HBTs Towards 200 GHz fmax

Engineering SiGe HBTs with very high fT and fmax poses a significant challenge in the industry. Most technology iterations focus primarily on the improvement of the NPN performance for RF amplifiers, and a fast PNP device is often never offered. It is even more difficult to make high performance SiGe PNP transistors with comparable performance due to fundamental material and electrical limitations. However, the availability of a complementary device can enable several circuit applications including matched driver circuits and push-pull amplifiers. This paper applies lateral and vertical optimizations in a SiGe PNP, explores the performance scaling available and demonstrates a measured peak fT /fmax performance of 130/180 GHz at a BVCBO of 5.1 V.

Driver for 5-phase stepper motor pentagon connection with dedicated ICs

Stepper motors are very well suited for positioning applications since they can achieve very good positional accuracy without complicated feedback loops associated with servo systems. In this paper, an intelligent five-phase stepper motor driver of business card size proposed. Constant current chopping technique was applied for the purposes of high torque, high velocity and high efficiency. The driver was designed to drive a middle-sized hybrid stepper motor with wire current rating from 0.7 to 1.4A. An up-to-dated translator of five-phase stepping motor was used to drive the gates of N- channel MOSFET (Low side N-channel MOSFET Array) and level shift for NPN Darlington transistor (High side PNP Darlington transistor). The resolution in full/half mode is 0.72/0.36 degrees/step. Moreover, an automatic power down circuit was used to limit the power consuming as the motor stops. Additionally, a self-testing program embedded in an 80C31-CPU (PCL838) can self-test whether the driver is normal or not. This embedded program including linear acceleration and deceleration routines also can serve as a positioning controller. The dimension of this driver is approximate 90x70x40 millimeters, which is smaller than a business card. Experimental results demonstrate that the responses of the driver can reach 60 kilo pulses per second.

Rapid removal of ultra-high-concentration p-nitrophenol in aqueous solution by microwave-enhanced Fe/Cu bimetallic particle (MW-Fe/Cu) system

ABSTRACTUltra-high-concentration PNP-contained wastewaters are produced sometimes due to the wide application of this nitrophenolic compound in the chemical industry. However, there is a lack of appropriate technologies to rapidly pretreat the ultra-high-concentration wastewater. Therefore, a new microwave-enhanced Fe/Cu bimetallic particles (MW-Fe/Cu) system was developed to rapidly remove ultra-high-concentration PNP. First, the priority of the determinative parameters was obtained by orthogonal experiment. Based on this result, the effects of initial pH, microwave power, Fe/Cu dosage and initial PNP concentration on PNP removal were optimized thoroughly. Under the optimal conditions (i.e. initial pH = 1.0, MW power = 385 W, Fe/Cu dosage = 30 g/L and initial PNP concentration = 4000 mg/L), four control treatment systems (i.e. MW-Fe0, heating-Fe/Cu, MW alone and Fe/Cu alone system) were set up to compare with the MW-Fe/Cu system. The results suggest that high PNP removal (more than 99% with 2.5 min, k1/k2 = 1.18/6.91 min−1) and COD removal (26.6% with 5 min treatment) could be obtained by the MW-Fe/Cu system, which were much superior to those obtained using the MW-Fe0 (k1/k2 = 0.62/2.21 min−1) and the heating-Fe/Cu system (k1/k2 = 0.53/1.52 min−1). Finally, the determination of the intermediates of PNP degradation by HPLC indicated that the MW assistance process did not change the degradation pathway of PNP. This concludes that the new MW-Fe/Cu system was the promising technology for pretreatment of wastewater containing ultra-high-concentration toxic and refractory pollutants at a fairly short treatment time.

Microbial community dynamics in aerated biological fluidized bed (ABFB) with continuously increased p-nitrophenol loads

Biodegradability of PNP has been reported widely in recent years, but the community composition of PNP-degrading microorganisms was still unclear today. In this paper, the biodegradation process with continuously PNP loading from 0 to 6.50 kg m−3 d−1 in 58 days in an aerobic biological fluidized bed (ABFB) reactor has been investigated. The results show that COD and PNP removal stabilized at 95% and 99% during the operation period with a maximum PNP concentration of 1250 mg/L. The high concentration of PNP in substrate led to a significant increase in extracellular polymeric substances (EPS) component of biomass and obvious morphological changes of microbial colonies during the degradation process. In addition, high-throughput sequencing was employed to reveal the highly diverse bacterial and fungal populations in the reactor. At the same time, genera Sphingobium, Penicillum and Debaryomyces belonging to phyla Proteobacteria and Ascomycota were identified to be the dominant species in high concentration PNP degradation process. This work investigated the tolerable degree of aerobic microbes to PNP toxicity as well as the characteristics of microbial communities at different PNP concentration levels. It might add some new insights into bacterial and fungal communities in high p-nitrophenol concentration degradation processes.

PNP Transistor Design and Simulation in SiGe BiCMOS with Low Cost and High Performance

The study and design of a low cost and high performance vertical PNP transistor at BiCMOS process platform is presented. The effect of different device designs on baseline process has been compared in terms of their electrics characteristics simulation result. The performance of PNP has been improved further through process optimization with the aid of process simulation. The fabricated PNP transistor silicon data shows consistent performance with simulation. Finally the performance of PNP device has met the target including current gain above 38, breakdown voltage (BV CEO) over 7 volts and cut-off frequency (f T) 10GHz. Its performance addresses the requirement for high speed circuit design.

0.25 micrometre smart power technology optimised for wireless and consumer applications

In this paper simultaneous optimization of 4.5-5.5V N and PMOS devices, 20-30V NLDMOS and NPN and PNP bipolar devices in a 0.25 /spl mu/m Smart Power Technology for portable wireless and consumer applications is discussed. With the addition of two designated wells, ultra-low resistance N and PMOS devices with good analog characteristics, best in class 30V NLDMOS as well as integrated high performance NPN and PNP bipolar devices is demonstrated.

The Influence of Dopant Type on Polysilicon Grain Growth and Solid Phase Epitaxial Regrowth

Abstract A recent process technology to manufacture bipolar junction transistors utilizes polysilicon emitters. Polysilicon is deposited, appropriately doped to form both NPN and PNP transistors, and exposed to temperatures that result in grain growth. Since polysilicon is in contact with Si( 100) at the emitter, base, and collector (Fig. 1), solid phase epitaxial regrowth might also occur. Production runs with this structure occasionally produce transistors with low current gain. High and low gain NPN and PNP transistors were characterized by transmission electron microscopy. Vertical sections through NPN/PNP transistor arrays were made by the wedge technique, low-angle ion milled to electron-transparency, and viewed at 200 KV. The grain size of the polysilicon on oxide was recorded and estimated. The extent of epitaxial regrowth was quantified for each of the Si (100) contact areas. Convergent Beam Electron Diffraction (CBED) was used to confirm the orientation of the presumed regrown polysilicon.

Hot-carrier effects in polysilicon emitter vertical PNP and NPN transistors

Hot-carrier effects due to reverse bias junctions of high performance vertical PNP bipolar transistors have been observed. Polysilicon emitter/base PNP devices both with and without deep trench isolation are examined. Comparisons are also made between high speed NPN and PNP transistors. The impact of a variety of stress conditions, BVebo, BVeco, BVceo and BVcbo has been studied.

Conformational analysis of X 3PNP(O)X 2 and (X 3PNPX 3) + for X = H, F, Cl, CH 3 by the pcilo method

Conformational energy maps have been calculated, using the PCILO method, for X 3PNP(O)X 2 and (X 3PNPX 3) + for X = H, F, Cl, CH 3 as a function of the PNP angle. In H 3PNP(O)H 2 the global energy minimum corresponds to the eclipsed conformation of the H 3P and P(O)H 2 fragments for all PNP angles, while in Cl 3PNP(O)Cl 2, the global minimum always has Cl 3P and P(O)C1 2 staggered: the global minimum in F 3PNP(O)F 2 corresponds to eclipsed F 3P and P(O)F 2 fragments at low PNP angles and staggered fragments at high PNP angles: in (CH 3)) 3PNPO(CH 3) 2 the global minimum conformation is very sensitive to ∠ PNP. Subordinate energy minima occur for all X 3PNP(O)X 2, species: in particular, there are two local conformational minima for Cl 3PNP(O)Cl 2 at the optimum value of ∠ PNP, and the relative energies of the three stable conformations are in good agreement with those derivable from the 31P NMR spectrum of this compound. In (X 3PNPX 3) + the global minimum, usually the sole minimum on the conformational energy surface, is always close to the eclipsed conformation: free rotation of the X 3P groups relative to one another is approached in each (X 3PNPX 3) + ion as ∠PNP approaches 180°. The conformations of the transition states for the equilibria between energy minima are reported with their relative energies, for X 3PNP(O)X 2 (X = H, F. Cl, CH 3) and for (Cl 3PNPCl 3) +