Higher Conduction Band Research Articles

Enhanced piezocatalytic RhB degradation with ZnSnO3 Nanocube-modified Bi4Ti3O12 composite catalyst by harnessing ultrasonic energy

With the increasing demand for effective methods to address environmental pollution, piezocatalysis has emerged as a promising approach for pollutant degradation under mechanical energy. However, the development of highly efficient piezocatalytic materials remains a challenge. This study aimed to increase the piezocatalytic activity of bismuth titanate (Bi4Ti3O12) by modifying it with zinc stannate (ZnSnO3) nanocubes. The composite catalysts were synthesized using a straightforward deposition and calcination process. The calcination process ensured the tight adhesion of ZnSnO3 nanocubes to the Bi4Ti3O12 surface, while facilitating strong interactions between ZnSnO3 and Bi4Ti3O12, which enhanced electron transfer and heterojunction structure formation. Band structure analysis indicated that Bi4Ti3O12 has higher conduction band and valence band potentials than ZnSnO3, forming a type-II heterojunction. Bi4Ti3O12 possesses a higher Fermi level than ZnSnO3, resulting in interfacial electron drift and formation of a built-in electric field, which further promotes the directional transfer and separation efficiency of charge carriers within the composite catalyst. This hypothesis was confirmed by surface photovoltage spectroscopy, piezoelectric current response, and electrochemical analysis. Consequently, the ZnSnO3/Bi4Ti3O12 composite exhibited significantly improved piezocatalytic performance in RhB degradation, achieving a degradation efficiency of 80 % within 90 min under ultrasonic vibration. The degradation rate of the optimal sample was 8.2 times that of Bi4Ti3O12 and 6.3 times that of ZnSnO3. Additionally, experiments to detect reactive species were conducted to elucidate the mechanism behind the piezocatalytic RhB degradation. Holes and hydroxyl radicals were the main reactive species. This study may offer new insights into the design of efficient piezocatalytic materials.

Constructing high efficient carrier channels in double ternary compounds MoSSe/CdSSe heterojunction for photoelectrochemistry and electrocatalytic hydrogen production

Here is a demonstration of constructing MoSSe/CdSSe heterojunction catalyst from bimetallic selenium sulfides. CdSSe has a high conduction band position of −0.65 eV, resulting in a strong reduction potential of photogenerated electrons. However, the high resistance of CdSSe affects the transport of charge carriers. In addition, experiments have confirmed that the presence of S and Se in MoSSe and CdSSe enhances their chemical activity and facilitates bonding. A better connection can be formed between MoSSe and CdSSe, resulting in high carrier transport efficiency. In the X-ray photoelectron spectroscopy results, the Mo and Se signals showed a large shift nearly 1 eV which confirms the strong binding between MoSSe and CdSSe. In the photoelectrochemical tests, the MoSSe/CdSSe heterojunction demonstrated a photocurrent density of 3.097 mA/cm2 at 0 V (RHE) which is 2.7 and 2.9 times that of MoSSe (1.227 mA/cm2) and CdSSe (1.127 mA/cm2) respectively with a low resistance of 161 Ω. Moreover, the MoSSe/CdSSe also has good electrocatalytic hydrogen evolution performance with an overvoltage of 180 mV and Tafel slope of 69 mV/dec. Fluorescence and photocurrent response tests confirmed its higher carrier separation efficiency. This work demonstrates the application of ternary metal selenium sulfide heterojunctions in catalytic energy materials.

High performance E-mode NiO/β-Ga2O3 HJ-FET with high conduction band offset and thin recessed channel

In this paper, an enhancement-mode (E-mode) NiO/β-Ga2O3 heterojunction field-effect transistor (HJ-FET) with high conduction band offset (ΔEC) and thin recessed channel is proposed and studied by Sentaurus TCAD. Different from the existing HJ-FET with low ΔEC alignment, the High ΔEC HJ-FET can achieve a much lower on-resistance (Ron) due to the strong electron confinement effect. More importantly, the disadvantage in the threshold voltage (Vth) is compensated by reducing the thickness of the recessed channel, maintaining an almost unchanged Ron with the help of the special surface conduction channel. Compared with the corresponding Low ΔEC HJ-FET, at the same Vth (∼ 0.82 V), the Ron is decreased from 135 Ω/mm to 90.7 Ω/mm and the maximum drain current is increased from 14.9 mA/mm to 83.1 mA/mm. By adding a top p-NiO layer for further optimization, a greatly improved power figure of merit (P-FOM) of 2.29 GW/cm2 is achieved among the E-mode HJ-FETs. These results show that the proposed High ΔEC HJ-FET with thin recessed channel is probably a better choice to achieve the high-performance E-mode lateral HJ-FET.

Optimizing photocatalytic hydrogen evolution performance by rationally constructing S-scheme heterojunction to modulate the D-band center

The research in the field of photocatalysis has progressed, with the development of heterojunctions being recognized as an effective method to improve carrier separation efficiency in light-induced processes. In this particular study, CuCo2S4 particles were attached to a new cubic CdS surface to create an S-scheme heterojunction, thus successfully addressing this issue. Specifically, owing to the higher conduction band and Fermi level of CuCo2S4 compared to CdS, they serve as the foundation and driving force for the formation of an S-scheme heterojunction. Through in-situ X-ray photoelectron spectroscopy and electron paramagnetic resonance analysis, the direction of charge transfer in the composite photocatalyst under light exposure was determined, confirming the charge transfer mechanism of the S-scheme heterojunction. By effectively constructing the S-scheme heterojunction, the d-band center of the composite photocatalyst was adjusted, reducing the energy needed for electron filling in the anti-bonding energy band, promoting the transfer of photogenerated carriers, and ultimately enhancing the photocatalytic hydrogen production. performance. After optimization, the hydrogen evolution activity of the composite photocatalyst CdS-C/CuCo2S4-3 reached 5818.9 μmol g−1h−1, which is 2.6 times higher than that of cubic CdS (2272.3 μmol g−1h−1) and 327.4 times higher than that of CuCo2S4 (17.8 μmol g−1h−1), showcasing exceptional photocatalytic activity. Electron paramagnetic resonance and in situ X-ray photoelectron spectroscopy have established a theoretical basis for designing and constructing S-scheme heterojunctions, offering a viable method for adjusting the D-band center to enhance the performance of photocatalytic hydrogen evolution.

Engineering Facet‐Dependent Interface Charge Transfer in Liquid Metal‐Embraced BiVO4 Photoelectrodes for Efficient Photoelectrochemical Water Splitting

AbstractCrystal facet‐dependent photogenerated charge transfer at the semiconductor/current collector interface of photoelectrodes is equally important compared to that at the semiconductor/liquid interface for efficient photoelectrochemical (PEC) water splitting, which, however, is difficult to explore due to the rigid solid/solid interface in conventional photoelectrodes. Here, the facet‐dependent charge transfer at both semiconductor/liquid and semiconductor/collector interfaces in liquid metal‐embraced photoelectrodes is systematically investigated using faceted BiVO4 micro‐particles with different ratios of {110} and {010} facets as model materials. The results from the photo(electro)chemical and photophysical characterizations reveal that {010} facets outperform {110} facets at the semiconductor/liquid interface in triggering water oxidation due to the lower valence band maximum (VBM) of {010} facets, while {110} facets are more efficient at the semiconductor/metal interface for the collection of photogenerated electrons due to their higher conduction band minimum (CBM). Consequently, the photoelectrodes of liquid metal‐embraced BiVO4 particles exposing 53% {110} facets yield the best PEC performance for water splitting due to the well‐balanced photogenerated charge transfer at the interfaces of semiconductor/metal and semiconductor/liquid.

Solar-light-driven photocatalytic degradation and detoxification of ciprofloxacin using sodium niobate nanocubes decorated g-C3N4 with built-in electric field

Simultaneous degradation and detoxification during pharmaceutical and personal care product removal are important for water treatment. In this study, sodium niobate nanocubes decorated with graphitic carbon nitride (NbNC/g-C3N4) were fabricated to achieve the efficient photocatalytic degradation and detoxification of ciprofloxacin (CIP) under simulated solar light. NaNbO3 nanocubes were in-situ transformed from Na2Nb2O6•H2O via thermal dehydration at the interface of g-C3N4. The optimized NbNC/g-C3N4-1 was a type-I heterojunction, which showed a high conduction band (CB) level of −1.68 eV, leading to the efficient transfer of photogenerated electrons to O2 to produce primary reactive species, •O2−. Density functional theory (DFT) calculations of the density of states indicated that C 2p and Nb 3d contributed to the CB, and 0.37 e– transferred from NaNbO3 to g-C3N4 in NbNC/g-C3N4 based on the Mulliken population analysis of the built-in electric field intensity. NbNC/g-C3N4-1 had 3.3- and 2.3-fold of CIP degradation rate constants (k1 = 0.173 min−1) compared with those of pristine g-C3N4 and NaNbO3, respectively. In addition, N24, N19, and C5 in CIP with a high Fukui index were reactive sites for electrophilic attack by •O2−, resulting in the defluorination and ring-opening of the piperazine moiety of the dominant degradation pathways. Intermediate/product identification, integrated with computational toxicity evaluation, further indicated a substantial detoxification effect during CIP degradation in the photocatalysis system.

Boosting Solar Water Splitting Performance of Cu3BiS3‐Based Photocathode via Ag Doping Strategy

AbstractA photovoltaic wittichenite semiconductor of Cu3BiS3, due to its optimal bandgap, high light absorption coefficient, and various advantages of low cost and environmental‐friendliness, has been considered a competitive candidate for solar absorber materials of photocathode for photoelectrochemical water splitting. However, the presence of various deleterious defects in the Cu3BiS3 lattice and its high conduction band minimum are detrimental factors that restrict further enhancements in the conversion efficiency of Cu3BiS3‐based photocathode. Herein, a one‐step solution‐based Ag element doping strategy is proposed to improve the crystalline quality of Cu3BiS3 films, which includes enlarging the grain size and reducing the intergranular gaps. Additionally, the Ag‐doped Cu3BiS3 layer can form a more favorable band alignment with the buffer layer. Ultimately, the fabricated composite Cu3BiS3‐based photocathode doped with 3% Ag delivers a remarkable photocurrent density of 13.6 mA cm−2 under 0 VRHE, an applied bias photon‐to‐current efficiency of 2.85%, and long‐term stability exceeding 12 h. Furthermore, with the assistance of a BiVO4 photoanode, the tandem cell also achieves an unbiased solar‐to‐hydrogen efficiency of 2.64%, with no significant decline observed within 20 h.

Z-Scheme heterojunction Cu2(OH)3F/Bi2WO6 with improved photocatalytic activity for uranium removal from wastewater under air atmosphere

The proper treatment of uranium-contaminated nuclear wastewater is important for uranium resource recovery and environmental protection. Photocatalytic strategies have emerged as promising approaches for improving uranium removal efficiency. In this study, a Z-scheme heterojunction Cu2(OH)3F/Bi2WO6 (CFO/BWO) was synthesized by directly depositing CFO onto a BWO semiconductor for highly efficient photocatalytic removal of uranium from wastewater. The CFO semiconductor contains abundant O–H bonds and a high conduction band position, which can couple with BWO to form a heterojunction via interactions between the O and W atoms. Owing to the high electronegativity of CFO, electrons easily transfer from BWO to CFO, resulting in enhanced electron-hole separation and promoted electron transmission. Importantly, introducing CFO narrowed the bandgap of CFO/BWO compared to that of BWO, providing an appropriate band position, which is more conducive to the photocatalytic immobilization of uranium. Moreover, the mechanism of CFO/BWO heterojunction for photocatalytic immobilization of uranium revealed the formation of a stable crystalline phase of (UO2)O2·2H2O during the photocatalytic process. As a result, CFO/BWO could remove 91 % of uranium from simulated wastewater under an air atmosphere. The findings of this study provide a promising strategy by regulating the band position of heterojunctions for photocatalytic immobilization of uranium.

Photo-crosslinking and layer-by-layer processed organic photodetectors with remarkably suppressed dark current

The effective reduction of dark (or noise) current presents a significant hurdle in enhancing the detectivity of organic photodetectors (OPDs). To address this challenge, a photo-crosslinkable donor polymer, PM6-Br50, is synthesized by introducing bromoalkyl side-chains onto the PM6 structure. This modification enables the formation of a pseudo planar heterojunction (p-PHJ) structure of crosslinked donor/acceptor through a layer-by-layer (LbL) sequential process without the necessity for an semi-orthogonal solvent. This innovation effectively overcomes solvent-related limitations in the LbL process. Additionally, we replace the semi-metallic hole-transport layer (HTL), PEDOT:PSS, with a semiconducting conjugated polyelectrolyte (TPAFS-TMA) with a high conduction band. The p-PHJ configuration, featuring pure donor/anode and pure acceptor/cathode contacts, enhances the charge injection barrier for electrons (holes) from the anode (cathode) in the dark under reverse bias, effectively minimizing dark current. Furthermore, the TPAFS-TMA HTL serves to impede electron injection from the anode. Through the synergistic combination of these two strategies, a significantly reduced dark current density (4.03 × 10−10 A cm−2) is measured by four orders of magnitude, compared to the bulk heterojunction OPDs with PEDOT:PSS. Furthermore, we measure remarkably high shot noise-based and total noise current-based specific detectivities of 4.27 × 1013 and 6.97 × 1012 cm Hz1/2 W−1 (with linear dynamic range of 73.7 dB), respectively.

Doping‐Induced Performance Improvement in ReS2 Field Effect Transistors: Exploring a Heterostructure with In2O3 Quantum Dots

AbstractRhenium disulfide (ReS2) is a type of transition metal dichalcogenides (TMDs) that has potential electronic and photoelectrical applications. However, limited research has been conducted on improving its electrical properties and understanding the effect of doping on ReS2‐based devices. In this study, the enhanced electrical and photoelectrical performance of a 2D/0D heterostructure constructed by decorating the In2O3 quantum dots (QDs) on a multilayer ReS2 field‐effect transistor (FET) is reported. The In2O3 QDs are characterized by using a transmission electron microscope, optical absorption, and photoluminescence spectroscopy. The n‐doping effects with improved mobility are clearly observed, which is attributed to the electron transfer induced by the relatively high conduction band level of In2O3 QDs. Owing to the channel migration of ReS2 and traps at the ReS2/In2O3 QDs interface, additional performance improvements are observed, including reduced contact resistance, improved subthreshold swing, and increased photoresponsivity; however, the photoresponse speed is decreased. In summary, the findings suggest a novel mixed‐dimensional heterostructure for enhancing the performance of ReS2 transistors and provide insights into doping‐induced channel migration for 2D materials.

Flame Spray Pyrolysis Synthesis of Vo-Rich Nano-SrTiO3-x.

Engineering of oxygen vacancies (Vo) in nanomaterials allows diligent control of their physicochemical properties. SrTiO3 possesses the typical ABO3 structure and has attracted considerable attention among the titanates due to its chemical stability and its high conduction band energy. This has resulted in its extensive use in photocatalytic energy-related processes, among others. Herein, we introduce the use of Flame Spray Pyrolysis (FSP); an industrial and scalable process to produce Vo-rich SrTiO3 perovskites. We present two types of Anoxic Flame Spray Pyrolysis (A-FSP) technologies using CH4 gas as a reducing source: Radial A-FSP (RA-FSP); and Axial A-FSP (AA-FSP). These are used for the control engineering of oxygen vacancies in the SrTiO3-x nanolattice. Based on X-ray photoelectron spectroscopy, Raman and thermogravimetry-differential thermal analysis, we discuss the role and the amount of the Vos in the so-produced nano-SrTiO3-x, correlating the properties of the nanolattice and energy-band structure of the SrTiO3-x. The present work further corroborates the versatility of FSP as a synthetic process and the potential future application of this process to engineer photocatalysts with oxygen vacancies in quantities that can be measured in kilograms.

High Conduction Band Polymer Acceptor as a Ternary Component for Indoor Power Generation and Photodiode: Enhanced Photovoltage and Suppressed Dark Current

High Conduction Band Polymer Acceptor as a Ternary Component for Indoor Power Generation and Photodiode: Enhanced Photovoltage and Suppressed Dark Current

Design and performance of GaSb-based quantum cascade detectors.

InAs/AlSb quantum cascade detectors (QCDs) grown strain-balanced on GaSb substrates are presented. This material system offers intrinsic performance-improving properties, like a low effective electron mass of the well material of 0.026 m 0, enhancing the optical transition strength, and a high conduction band offset of 2.28 eV, reducing the noise and allowing for high optical transition energies. InAs and AlSb strain balance each other on GaSb with an InAs:AlSb ratio of 0.96:1. To regain the freedom of a lattice-matched material system regarding the optimization of a QCD design, submonolayer InSb layers are introduced. With strain engineering, four different active regions between 3.65 and 5.5 µm were designed with InAs:AlSb thickness ratios of up to 2.8:1, and subsequently grown and characterized. This includes an optimized QCD design at 4.3 µm, with a room-temperature peak responsivity of 26.12 mA/W and a detectivity of 1.41 × 108 Jones. Additionally, all QCD designs exhibit higher-energy interband signals in the mid- to near-infrared, stemming from the InAs/AlSb type-II alignment and the narrow InAs band gap.

Enhanced photodetection through a perovskite BaTiO3 dielectric in a Si-MoS2 heterojunction.

The present investigation deals with the effect of a BaTiO3 (BTO) dielectric layer on the performance of MoS2/p-Si heterojunction photodetectors. The MoS2/p-Si junction demonstrates a responsivity of ∼80 A W-1 and detectivity of ∼1012 Jones. The inclusion of a dielectric BTO layer significantly enhances the performance of MoS2/p-Si photodetectors, leading to a remarkable improvement with a very high responsivity of ∼603 A W-1 and detectivity of ∼1013 Jones. The I-V characteristics of the MoS2/p-Si and MoS2/BTO/p-Si junctions under illumination can be understood by considering their respective energy band diagrams. This addition alters the energy band alignment, leading to higher conduction band offset and valence band offset values. The large photocurrent in forward bias in the MoS2/BTO/p-Si junction may be attributed to the presence of photogenerated electrons in the depletion region of BTO. BTO exhibits characteristics such as a long carrier diffusion length and low recombination rates, contributing to a reduction in carrier recombination within the photodetector for which the photocurrent of the MoS2/BTO/p-Si heterojunction can be improved significantly. The enhanced performance of the MoS2/BTO/p-Si junction, characterized by higher responsivity and detectivity, underscores the potential of this heterojunction for advanced photodetection applications, suggesting promising avenues for further research and development in the field of photodetectors. A comparative study with the available literature reveals that the excellent responsivity of ∼603 A W-1 and detectivity of ∼1013 Jones of the presently studied MoS2/BTO/p-Si heterojunction appear highly promising for various futuristic device applications.

Bifunctional S-scheme CdSSe/Bi2WO6 heterojunction catalysts exhibit generalized boosting performance in photocatalytic degradation of tetracycline hydrochloride, photoelectrochemical and electrocatalytic hydrogen production

In this work, by a simple method of hydrothermal synthesis, the CdSSe/Bi2WO6 S-scheme heterojunction catalyst is successfully obtained and the results are verified by XPS, EPR, band structure, etc. The S-scheme heterojunction can maintain the strong redox potential energy position of both catalysts, and adjust the electron transfer path to improve the electron-hole separation efficiency, and thus improve the charge transfer efficiency. CdSSe has a high conduction band (−1.13 eV) and a narrow bandgap width (1.59 eV), exhibiting good light absorption characteristics and reduction ability; the valence band position of Bi2WO6 is much low (2.58 eV), indicating good oxidation activity. This heterojunction has excellent oxidation and reduction capabilities and exhibits multifunctional catalysts. Its photocatalytic degradation ability of tetracycline hydrochloride is 2.2 times that of the original CdSSe, while its photoelectrochemical activity is 11 times that of CdSSe, reaching a photocurrent density of − 2.081 mA/cm2 at 0 V (vs. RHE). The electrocatalytic activity of its hydrogen evolution has also been enhanced. This study developed a design strategy for a novel bifunctional S-scheme heterojunction catalyst.

Surface restructuring Ni0.85Se/ZnSe catalyst shows large boosting electrocatalytic and photoelectrochemical performance

Catalytic performance is often affected by electronic band structure. Here, it is demonstrated that though loading ZnSe on the surface of Ni0.85Se to build Ni0.85Se/ZnSe heterojunction catalysts. The electronic band structure of Ni0.85Se/ZnSe heterojunction can be adjusted by the loading ZnSe, which largely affects the electrocatalytic and photoelectrochemical performance. Compared with pristine Ni0.85Se (1.49 eV) and ZnSe (2.50 eV), the bandgap of Ni0.85Se/ZnSe change from 1.28 to 1.60 eV, which is even lower than that of Ni0.85Se and ZnSe. Meanwhile, the positions of the conduction and valence bands of composites also show unusual changes: NZS2 has the highest conduction band of −0.78 eV which is higher than that of Ni0.85Se (−0.62 eV) and ZnSe (−0.66 eV) while NZS3 shows the lowest valence band of 0.88 eV which is also little lower than that of Ni0.85Se (0.87 eV). The characteristics of this adjustable electronic band structure bring obvious changes in catalytic performance. In the hydrogen evolution reaction tests, NZS2 has the lowest overvoltage of 209 mV and Tafel slope of 56 mV/dec, and NZS3 shows the lowest overvoltage of 318 mV and Tafel slope of 89 mV/dec in the oxygen evolution reaction. As compared, the Ni0.85Se has an overvoltage of 247 mV and Tafel slope of 77 mV/dec in hydrogen evolution reaction, and cannot achieve current density of 10 mA/cm2 in oxygen evolution reaction. It is considered that the higher conduction band is beneficial for reduction reaction and lower valence band means higher oxidation capacity. Moreover, the loading of ZnSe enhances the carrier's separation efficiency which causes higher photoelectrochemical performance.

Modifying the Electron Dynamics in High-Order Harmonic Generation via a Two-Color Laser Field

We investigate the harmonic emission from bichromatic periodic potential by numerically solving the time-dependent Schrödinger equation in the velocity gauge. The results show that the harmonic minimum is sensitive to the wavelength. Moreover, distinct crystal momentum states contribute differently to harmonic generation. In momentum space, the electron dynamics reveal a close relationship between the spectral minimum and the electron distribution in higher conduction bands. Additionally, by introducing an ultraviolet pulse to the fundamental laser field, the suppression of the harmonic minimum occurs as a result of heightened electron populations in higher conduction bands. This work sheds light on the harmonic emission originating from a solid with a two-atom basis.

In situ fabrication of N-doped Ti3C2Tx-MXene-modified BiOBr Schottky heterojunction with high photoelectron separation efficiency for enhanced photocatalytic ammonia synthesis

NH3 synthesis under ambient conditions remained great challenge owing to the strong NN bond energy, high ionization energy, and poor proton affinity of NH3. Herein, dopamine hydrochloride was selected as a N doping source to in-situ polymerization on the Ti3C2Tx MXenes surface forming a highly efficient co-catalyst, and then integrated into BiOBr to induce a super high photocatalysis for ammonia synthesis. As expected, BiOBr was evenly dispersed on the N-Ti3C2Tx MXene surface. The photocatalysis possessed a high degree of photocatalytic ammonia evolution (270.73 μmol/g·h and 3.27 times higher than that of BiOBr) and retained about 60 % of its ammonia evolution after five consecutive cycles. The photocatalyst mechanism is high dispersion and elevated conduction band potential of N-Ti3C2Tx MXene nanosheets facilitated charge transfer to the active sites of the nanosheets. This study proved the potential use of dopamine hydrochloride in MXene photocatalytic materials for solar energy utilization ammonia synthesis.

Novel Vertical Fin-Based NiO/β-Ga2O3 Heterojunction Field-Effect Transistor with a Low Ron,sp

In this paper, a novel vertical fin-based NiO/β-Ga2O3 heterojunction field-effect transistor (Fin-HJFET) is proposed and studied by TCAD. Theoretically high conduction band offset () enables Ga2O3 Fin-HJFET to produce electron confinement effect at certain gate bias voltage. According to the simulation results, this effect makes Ga2O3 Fin-HJFET can not only form surface-conducting fin channels that are not available in conventional fin-based junction field-effect transistor (Fin-JFET) but also have a stronger electron accumulation capability than Ga2O3 vertical FinFET due to the deep potential well, which leads to a lower specific on-resistance (). In addition, Ga2O3 Fin-HJFET inherits the advantages of Ga2O3 FinFET as a vertical normally-off device and has a higher breakdown voltage compared to FinFET without field plates due to the protection of the highly doped NiO layer. Particularly, Fin-HJFET with different heterojunction band alignments are also considered and discussed. At last, the parameter influence and future optimization space of this highly promising device are explored, providing guidance for actual device fabrication and future device improvement.

MoSe2 @rGO as Highly Efficient Host and Catalyst for Li-Organosulfide Battery.

Organosulfides are promising high-capacity cathode materials for rechargeable lithium batteries. However, sluggish kinetics and inferior utilization impede its practical application in batteries. Rationally designing redox mediators and identifying their active moieties remain formidable challenges. Currently, as a rising star of transition metal dichalcogenides, few-layered MoSe2 decorated reduced graphene oxide (rGO) (MoSe2 @rGO) with high electronic conductivity and narrow energy band is used to manipulate electrocatalytic redox kinetics of organosulfides, thereby enhancing the battery performance. Here, an exotic MoSe2 @rGO is reported with Se defects material obtained from 2D MoSe2 growing on rGO for Li-dipentamethylenethiuram tetrasulfide (Li-PMTT) batteries. MoSe2 @rGO with Se defects has a large specific surface area, and sufficient pores, as well as exce llent catalytic ability for organosulfides conversion reactions. Therefore, the PMTT@MoSe2 @rGO cathode delivers a high reversible capacity of 405mAhg-1 in the first cycle at 0.5 C and can maintain 238.3mAhg-1 specific capacity after 300cycles. This work offers an understanding of organosulfides electrochemistry toward fast and durable performance, holding great promise for developing practically feasible lithium-organosulfides battery material designs.