High-brightness Blue Light-emitting Diodes Research Articles

High brightness blue light-emitting diodes based on CsPb(Cl/Br)3 perovskite QDs with phenethylammonium chloride passivation.

All inorganic perovskite quantum dots (QDs) (CsPbX3, X = Cl, Br, I) have been applied on light-emitting devices (LEDs) in recent years due to their excellent optical and optoelectronic properties. However, blue-light emitting perovskite QD LEDs (PQD-LEDs) exhibit poor performances compared with their green- and red-light emitting counterparts. Herein, we fabricated high performing blue-light emitting PQD-LEDs based on phenethylammonium chloride (PEACl) modified CsPb(Cl/Br)3 QDs. Firstly, the PEA-CsPbCl3 QDs were synthesized by introducing certain amounts of PEACl in the conventional hot-injection synthesis process. The merit of our synthesis lies in the fact that not only the Cl vacancies of CsPbCl3 QDs are efficiently modified by introducing the PEACl precursor, but also the partial long-chain organic ligands (OLA) capping on the surface of CsPbCl3 QDs are simultaneously replaced by shorter PEACl chains. Consequently, the PEA-CsPbCl3 QDs emitting at 410 nm with a PLQY of 62.3% were achieved. Furthermore, to meet the requirement of display applications, we exchanged Cl- with Br- ions at room temperature to precisely control the blue emission in the 460-470 nm spectral region and with a maximum PLQY of 80.2% at 470 nm. Finally, the PQD-LEDs based on PEA-CsPb(Cl/Br)3 perovskite QDs emitting at 462, 465, 468 and 470 nm were fabricated. The PQD-LEDs exhibit a maximal EQE of 2.15% and luminance of 620 cd m-2, which provides the highest value of luminance for the PQD-LEDs in the blue spectral range that satisfies the requirement of practical display applications.

High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.

Single-crystalline GaN-based light-emitting diodes (LEDs) with high efficiency and long lifetime are the most promising solid-state lighting source compared with conventional incandescent and fluorescent lamps. However, the lattice and thermal mismatch between GaN and sapphire substrate always induces high stress and high density of dislocations and thus degrades the performance of LEDs. Here, the growth of high-quality GaN with low stress and a low density of dislocations on graphene (Gr) buffered sapphire substrate is reported for high-brightness blue LEDs. Gr films are directly grown on sapphire substrate to avoid the tedious transfer process and GaN is grown by metal-organic chemical vapor deposition (MOCVD). The introduced Gr buffer layer greatly releases biaxial stress and reduces the density of dislocations in GaN film and Inx Ga1-x N/GaN multiple quantum well structures. The as-fabricated LED devices therefore deliver much higher light output power compared to that on a bare sapphire substrate, which even outperforms the mature process derived counterpart. The GaN growth on Gr buffered sapphire only requires one-step growth, which largely shortens the MOCVD growth time. This facile strategy may pave a new way for applications of Gr films and bring several disruptive technologies for epitaxial growth of GaN film and its applications in high-brightness LEDs.

Au-Doped Indium Tin Oxide Ohmic Contacts to p-Type GaN

Indium tin oxide (ITO) thin films doped with Au, Ni, or Pt (3.5 at.% to 10.5 at.%) were deposited on p-GaN epilayers (Mg ~4 × 1019 cm−3) using direct-current (DC) sputter codeposition. It was found that undoped ITO con- tacts to p-GaN exhibited leaky Schottky behavior, whereas the incorporation of a small amount of Au (3.5 at.% to 10.5 at.%) significantly improved their ohmic characteristics. Compared with standard Ni/ITO contacts, the Au-doped ITO contacts had a similar specific contact resistance in the low 10−2 Ω cm−2 range, but were more stable above 600°C and more transparent at blue wavelengths. These results provide support for the use of Au-doped ITO ohmic contact to p-type GaN in high-brightness blue light-emitting diodes.

高輝度青色発光ダイオード

高輝度青色発光ダイオード