A high pressure reflux technique has been used to grow Hg 1−xCd xTe alloy crystals under controlled Hg pressures up to 80 atm. Refluxing is obtained by combining a high pressure of inert gas and a negative temperature gradient over the charge of volatile materials, making it possible to contain the charge without high-temperature seals or liquid encapsulation. The continuous evaporation and condensation process results in the separation of the inert gas and vapor species at a well-defined interface where gas and vapor have the same pressure. For Hgin1-xCd xTe crystal growth, the pressure of the inert gas at the reflux interface is adjusted to correspond to the Hg vapor pressure required to maintain stoichiometry in the charge during solidification and crystal growth. Large-diameter (up to 2.5 cm), high-quality Hgin1-xCd xTe crystals with x up to 0.60 have been grown by the technique in a high-pressure furnace. Carrier concentrations below 10 15 cm -3 and electron mobilities in excess of 10 5 cm 2/V-sec have been obtained at 77 K in annealed n-type Hg 0.80Cd 0.20Te. Background-limited photoconductive infrared detectors for to μm spectral region have been fabricated from this n-type material. High-performance short-wavelength (2 to 5 μm) photovoltaic detectors have been fabricated from as-grown p-type material by In ion implantation.
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