Miniaturized materials, in general, exhibit higher strength compared to their bulk counterparts. As a consequence, their resistance to fracture is often compromised. However, the effect of material inhomogeneities can be used to significantly improve the fracture toughness of thin film components. In this work, the material inhomogeneity effect on the crack driving force, caused by material property and residual stress variations in thin tungsten and copper stacks, is numerically investigated. To this purpose, a finite element analysis is performed using the concept of configurational forces. In this way, we are able to distinguish between the various inhomogeneity effects and draw conclusions about the effective crack driving force. It is demonstrated that the material inhomogeneity effect is not solely determined by the material property variations at the interfaces, since an important contribution emerges due to a smooth residual stress gradient within the layers. The possibility to separate the different effects represents an opportunity for cost efficient design of future reliable thin film microelectronic components.
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