Gate Field Effect Transistor Research Articles

TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applications

TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applications

Comparative Simulation Study of InGaN and Silicon Channel Stack Oxide Twin Gate Field Effect Transistor Based Ammonia Gas Sensor

Comparative Simulation Study of InGaN and Silicon Channel Stack Oxide Twin Gate Field Effect Transistor Based Ammonia Gas Sensor

N‐Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory

AbstractThe family of 2D chalcogenide semiconductors has been growing rapidly. Metal monochalcogenides, for instance, can enable new possibilities in functional electronics and optoelectronics. A Gallium Selenide (GaSe) thin flake is used to fabricate a back gated field effect transistor (FET) with n‐type conduction behavior and wide hysteresis at the ambient conditions. The device shows high mobility up to 28 cm2 V−1 s−1 with Ion/Ioff ratio over 103. Under the laser exposure, the device shows a decrease in the threshold voltage and a left‐shift of the transfer characteristic with a slight increase in the current. The transfer characteristic exhibits a hysteretic behavior with hysteresis width linearly dependent on the applied gate voltage. Moreover, the GaSe‐based FET shows a photo response with a photoresponsivity of 475 mAW−1 and detectivity of 4.6 × 1012 Jones. The photocurrent rise and decay times are 0.1 and 1.3 s, respectively. Furthermore, the GaSe FET device can be used as a performant memory device with well separated states and memory window enhanced by the laser exposure, confirming an optoelectronic memory class.

Pyrene Derivative Incorporated Ni MOF as an Enzyme Mimic for Noninvasive Salivary Glucose Detection Toward Diagnosis of Diabetes Mellitus.

Herein, we demonstrate the detection of glucose in a noninvasive and nonenzymatic manner by utilizing an extended gate field-effect transistor (EGFET) based on the organic molecule pyrene phosphonic acid (PyP4OH8) incorporated nickel metal-organic framework (NiOM-MOF). The prepared electrode responds selectively to glucose instead of sucrose, fructose, maltose, ascorbic acid, and uric acid in a 1× phosphate buffer saline solution. Also, utilizing the scanning Kelvin probe system, the sensing electrode's work function (Φ) is measured to validate the glucose-sensing mechanism. The sensitivity, detection range, response time, limit of detection, and limit of quantification of the electrode are determined to be 24.5 μA mM-1 cm-2, 20 μM to 10 mM, less than 5 s, 2.73 μM, and 8.27 μM, respectively. Most interestingly, the developed electrode follows the Michaelis-Menten kinetics, and the calculated rate constant (km) 0.07 mM indicates a higher affinity of NiOM-MOF toward glucose. The real-time analysis has revealed that the prepared electrode is sensitive to detect glucose in real human saliva, and it can be an alternative device for the noninvasive detection of glucose. Overall, the outcomes of the EGFET studies demonstrate that the prepared electrodes are well-suited for expeditious detection of glucose levels in saliva.

Unveiling the potential of vanadium-doped CVD-grown p-type MoS2 in vertical homojunction UV–Vis photodiodes

2D materials are a popular choice for the fabrication of p-n diodes for applications in integrated optoelectronics owing to their outstanding properties such as strong light-matter interactions, high mobility, and tunable band gap. The synthesis of monolayer and few-layer 2D materials with both p-type and n-type behavior is thus essential for the design and fabrication of such devices. However, the large-scale direct synthesis of p-type 2D materials is still a challenge as most of these materials are either n-type or ambipolar. Here, we report the successful synthesis of large-area, p-type MoS2 layers doped with vanadium on SiO2/Si substrates, achieving flake sizes >100 μm. By varying the concentration of the vanadium precursor, we precisely controlled the doping level, achieving vanadium atomic percentages ranging from 0.70 % to 1.57 %. Back gate field-effect transistors (FETs) were fabricated, enabling the tuning of device characteristics to exhibit ambipolar or p-type behavior. Moreover, a vertical p-n MoS2 homojunction was fabricated for rectification and optoelectronic applications, demonstrating a high responsivity of up to 978.1 A/W and a specific detectivity (D*) of 1.06 × 1012 Jones at λ = 365 nm with varied powers of the incident light source. This work demonstrates the role of vanadium as a dopant for tunable electrical transport behavior as well as for the fabrication of a photodiode, which can be used for high-performance optoelectronic devices in the future.

Analyzing Various Structural and Temperature Characteristics of Floating Gate Field Effect Transistors Applicable to Fine-Grain Logic-in-Memory Devices.

Although the von Neumann architecture-based computing system has been used for a long time, its limitations in data processing, energy consumption, etc. have led to research on various devices and circuit systems suitable for logic-in-memory (LiM) computing applications. In this paper, we analyze the temperature-dependent device and circuit characteristics of the floating gate field effect transistor (FGFET) source drain barrier (SDB) and FGFET central shallow barrier (CSB) identified in previous papers, and their applicability to LiM applications is specifically confirmed. These FGFETs have the advantage of being much more compatible with existing silicon-based complementary metal oxide semiconductor (CMOS) processes compared to devices using new materials such as ferroelectrics for LiM computing. Utilizing the 32 nm technology node, the leading-edge node where the planar metal oxide semiconductor field effect transistor structure is applied, FGFET devices were analyzed in TCAD, and an environment for analyzing circuits in HSPICE was established. To seamlessly connect FGFET-based devices and circuit analyses, compact models of FGFET-SDB and -CSBs were developed and applied to the design of ternary content-addressable memory (TCAM) and full adder (FA) circuits for LiM. In addition, depression and potential for application of FGFET devices to neural networks were analyzed. The temperature-dependent characteristics of the TCAM and FA circuits with FGFETs were analyzed as an indicator of energy and delay time, and the appropriate number of CSBs should be applied.

An extended-gate field-effect transistor (EG-FET) signal transducing combined with epitope molecular imprinting for selective chemosensing of chosen idiopathic pulmonary fibrosis (IPF) biomarkers

We propose a relatively rapid and straightforward procedure for the determination of chosen idiopathic pulmonary fibrosis (IPF) predictive protein biomarkers, vis., matrix metalloproteinase-1 (MMP-1) and surfactant-associated protein-A (SP-A), suitable for their determination in bodily fluids. IPF is a lethal lung disease, annually causing nearly as many deaths as breast cancer. Moreover, the coronavirus recently triggered acute exacerbation of patients suffering from IPF. Here, epitopes specific to the chosen IPF biomarkers were molecularly imprinted in a polymer as an alternative to imprinting fragile whole biomarkers’ molecules. A thin molecularly imprinted polymer (MIP) film-based recognition units were integrated by electropolymerization with gates of extended-gate field-effect transistors (EG-FETs) to fabricate biomarker-selective chemical sensors suitable as point-of-care testing (POCT) diagnostic devices. Either AQDDIDGIQAI or FKGNKYWAVQGQNV single-epitope imprinting allowed determining the MMP-1 biomarker in the 10 to 250 nM linear dynamic concentration range with a LOD of 7.5 or 2 nM, respectively. Simultaneous imprinting of three MMP-1 epitopes, vis., MIAHDFPGIGHK, HGYPKDIYSS, and FKGNKYWAVQGQNV, decreased this LOD to 0.1 nM, allowing for determining this biomarker in serum. Moreover, by FSSNGQSIT or YSDGTPVNYTNWYR single-epitope imprinting, chemosensors for SP-A were fabricated to show the versatility of epitope imprinting. These chemosensors selectively determined the SP-A biomarker with the LOD of 1.9 or 2.9 nM, allowing its determination in bodily fluids.

Evaluation of sensitivity of Extended Gate Field Effect Transistor -biosensor based on V2O5/GOx for glucose detection

The sensing modified electrode was prepared using glucose oxidase immobilized onto vanadium pentoxide xerogel with glass/FTO as support electrode to evaluate the possibility to construct a V2O5/GOx Extended Gate Field Effect Transistor biosensor. Previously, our studies exhibited a sensitivity of V2O5 of 58.1 mV/pH. The use of Nafion® onto V2O5/GOx caused a decrease of mass loss after several cycles compared to the modified electrode without Nafion® during the EQCM and cyclic voltammetrics studies. Electrical characterization of V2O5/GOx demonstrated a tendency to stability after 200 s as a function of applied current. In presence of glucose and in different pH, the current decreased when the glucose concentration increased due to the lower active sites of enzyme. After ten voltammetric cycles, the total charge tends to structural stability. In pH = 5.0, the modified electrode based on V2O5/GOx Extended Gate Field Effect Transistor presented more tendency to sensitivity in different concentration of glucose.

Development of Direct Electron Transfer-Type Extended Gate Field Effect Transistor Enzymatic Sensors for Metabolite Detection.

In this work, direct electron transfer (DET)-type extended gate field effect transistor (EGFET) enzymatic sensors were developed by employing DET-type or quasi-DET-type enzymes to detect glucose or lactate in both 100 mM potassium phosphate buffer and artificial sweat. The system employed either a DET-type glucose dehydrogenase or a quasi-DET-type lactate oxidase, the latter of which was a mutant enzyme with suppressed oxidase activity and modified with amine-reactive phenazine ethosulfate. These enzymes were immobilized on the extended gate electrodes. Changes in the measured transistor drain current (ID) resulting from changes to the working electrode junction potential (φ) were observed as glucose and lactate concentrations were varied. Calibration curves were generated for both absolute measured ID and ΔID (normalized to a blank solution containing no substrate) to account for variations in enzyme immobilization and conjugation to the mediator and variations in reference electrode potential. This work resulted in a limit of detection of 53.9 μM (based on ID) for glucose and 2.12 mM (based on ID) for lactate, respectively. The DET-type and Quasi-DET-type EGFET enzymatic sensor was then modeled using the case of the lactate sensor as an equivalent circuit to validate the principle of sensor operation being driven through OCP changes caused by the substrate-enzyme interaction. The model showed slight deviation from collected empirical data with 7.3% error for the slope and 8.6% error for the y-intercept.

Nonenzymatic Potentiometric Detection of Ascorbic Acid with Porphyrin/ZnO-Functionalized Laser-Induced Graphene as an Electrode of EGFET Sensors.

Laser-induced graphene (LIG) has emerged as a highly versatile material with significant potential in the development of electrochemical sensors. In this paper, we investigate the use of LIG and LIG functionalized with ZnO and porphyrins-ZnO as the gate electrodes of the extended gate field effect transistors (EGFETs). The resultant sensors exhibit remarkable sensitivity and selectivity, particularly toward ascorbic acid. The intrinsic sensitivity of LIG undergoes a notable enhancement through the incorporation of hybrid organic-inorganic materials. Among the variations tested, the LIG electrode coated with zinc tetraphenylporphyrin-capped ZnO nanoparticles demonstrates superior performance, reaching a limit of detection of approximately 3 nM. Furthermore, the signal ratio for 5 μM ascorbic acid relative to the same concentration of dopamine exceeds 250. The practical applicability of these sensors is demonstrated through the detection of ascorbic acid in real-world samples, specifically in a commercially available food supplement containing l-arginine. Notably, formulations with added vitamin C exhibit signals at least 25 times larger than those without, underscoring the sensors' capability to discern and quantify the presence of ascorbic acid in complex matrices. This research not only highlights the enhanced performance of LIG-based sensors through functionalization but also underscores their potential for practical applications in the analysis of vitamin-rich supplements.

A 0.75V 10nm FinField-Effect Transistor Based Hybrid Self Controlled PreCharge Free Content Addressable Memory for Low Standby Power Applications

ABSTRACT The switching speed and driving capability have been enhanced by scaling the transistor size to nanoscale. The limitations in using MOSFET are that the short channel effects such as leakage current, subthreshold voltage, etc. thereby the Complementary Metal Oxide Semiconductor (CMOS) scaling is challenging now.This leads to the emergence of multi-gate devices, such as Fin Field Effect Transistor (FinFET) and Double Gate FinFET (DG-FinFET), which reduces the short channel effect. Now, a days memory plays a vital role in Integrated Circuits (IC), so the size of it must be scaled down to reduce the overall leakage andinstead of CMOS an advanced MOSFET such as FinFET can be used to avoid SCE. The area of the memory Static Random Access Memory (SRAM) is reduced by eliminating the two-load transistor. The novel 4T SRAM is designed at 10 nm 0.75 v FinFET Technology and compared with 14 nm Technology that is inbuilt into content addressable memory (CAM) to reduce the power consumption of CAM. The results show that the proposed design improves on a voltage basis and the complexity of the circuit is reduced by about 23% in terms of transistor count compared with the other conventional techniques. The 10 nm FinFET Hybrid Self Controlled - PreCharge Free (HSCPF) CAM design is best-suitable for low-power applications.

Development of a glycated albumin sensor employing dual aptamer-based extended gate field effect transistors

Glycated albumin (GA), defined as the percentage of serum albumin glycation, is a mid-term glycemic control marker for diabetes. The concentrations of both glycated human serum albumin (GHSA) and total human serum albumin (HSA) are required to calculate GA. Here, we report the development of a GA sensor employing two albumin aptamers: anti-GHSA aptamer which is specific to GHSA and anti-HSA aptamer which recognizes both glycated and non-glycated HSA. We combine these aptamers with extended gate field effect transistors (EGFETs) to realize GA monitoring without the need to pretreat serum samples, and therefore suitable for point of care and home-testing applications. Using anti-GHSA aptamer-immobilized electrodes and EGFETs, we measured GHSA concentrations between 0.1-10 μM within 20 min. The sensor was able to measure GHSA concentration in the presence of BSA for a range of known GA levels (5–29%). With anti-HSA aptamer-immobilized electrodes and EGFETs, we measured total HSA concentrations from 1-17 μM. Furthermore, GHSA and total HSA concentrations of both healthy and diabetic-level samples were determined with GHSA and HSA sensors. The measured GHSA and total HSA concentrations in three samples were used to determine respective GA percentages, and our calculations agreed with GA levels determined by reference methods. Thus, we developed simple and rapid dual aptamer-based EGFET sensors to monitor GA through measuring GHSA and total HSA concentration, without the need for sample pretreatment, a mandatory step in the current standard of enzymatic GA monitoring.

Variability aware ultra-low power design of NOR/NAND gate using non-conventional techniques

Fundamental to digital signal processing applications such as the Arithmetic Logic Unit (ALU), logic gates serve as the foundational components. This paper presents NOR and NAND gates engineered for operation within the ultra-low voltage (LV) and low power domains (LP). Utilizing the floating gate MOSFET (FGMOS) approach, this study adopts a strategy to enhance performance, focusing on reducing design complexity and minimizing power consumption.The proposed FGMOS-NAND/NOR gate design is investigated for important device parameters such as power (pwr), delay (tp), power delay product (PDP), and energy delay product (EDP). At 0.7 V supply, the overall power consumption of the FGMOS NOR and NAND gates is 0.442 nW and 0.323 nW, respectively. Further, carbon nanotube field effect transistor (CNTFET) technology is used to implement NOR and NAND gates in this research work. A rigorous comparative analysis was conducted in this research study to assess the performance of non-conventional technologies, specifically field-effect transistors with floating gate (FGMOS) and carbon nanotube field-effect transistors (CNFET), in comparison to the conventional complementary metal-oxide-semiconductor (CMOS) technology. Notably, our investigation revealed that when carbon nanotube field-effect transistor (CNTFET) technology is synergistically employed in conjunction with FGMOS technology, the overall circuit performance is significantly enhanced. Furthermore, in order to estimate the robustness and reliability of the proposed designs, comprehensive analysis pertaining to delay and power-delay product (PDP) variability were meticulously carried out within the scope of this research article.

Tin disulfide nanoflowers and nitrogen doped graphene oxide based extended gate field effect transistor as immunosensors

Miniaturized biosensor design is widely preferred for its application in integrated platform to provide rapid and sensitive diagnosis. However, there are only few reports which employ extended gate field effect transistors (EG-FET) for immunosensing application. Herein, we designed EG-FET using four level lithography techniques. Further, the gate layer (Au/Ti) of device has been modified with Tin disulfide nanoflowers (SnS2) and nitrogen doped graphene oxide (N-GO) hybrid composite for enhanced electrical sensing. The as-prepared SnS2 and N-GO based nanocomposite (SnS2/N-GO) was characterized by various techniques. The designed SnS2/N-GO based EG-FET was employed as an immunosensor to detect HIgG using anti-HIgG antibody. Under optimum conditions, our miniaturized immunosensor demonstrated the detection of HIgG as low as 4.81 ng/mL. The proposed immunosensor exhibited excellent sensitivity, selectivity and reproducibility towards HIgG detection, thereby suitable for a reliable integrated biosensing platform which can detect protein concentration in real samples for clinical diagnostics.

A 'Frugal' EGFET Sensor for Waterborne H2S.

Hydrogen sulphide (H2S) is a toxic gas soluble in water, H2Saq, as a weak acid. Since H2Saq usually originates from the decomposition of faecal matter, its presence also indicates sewage dumping and possible parallel waterborne pathogens associated with sewage. We here present a low footprint ('frugal') H2Saq sensor as an accessible resource for water quality monitoring. As a sensing mechanism, we find the chemical affinity of thiols to gold (Au) translates to H2Saq. When an Au electrode is used as a control gate (CG) or floating gate (FG) electrode in the electric double layer (EDL) pool of an extended gate field effect transistor (EGFET) sensor, EGFET transfer characteristics shift along the CG voltage axis in response to H2Saq. We rationalise this by the interface potential from the adsorption of polar H2S molecules to the electrode. The sign of the shift changes between Au CG and Au FG, and cancels when both electrodes are Au. The sensor is selective for H2Saq over the components of urine, nor does urine suppress the sensor's ability to detect H2Saq. Electrodes can be recovered for repeated use by washing in 1M HCl. Quantitatively, CG voltage shift is fitted by a Langmuir-Freundlich (LF) model, supporting dipole adsorption over an ionic (Nernstian) response mechanism. We find a limit-of-detection of 14.9 nM, 100 times below potability.

Fabrication and characterization of planar electrolyte gated field effect transistor with magnetic electrodes

Fabrication and characterization of planar electrolyte gated field effect transistor with magnetic electrodes

Parameter Extraction of Extended Floating Gate Field-Effect Transistors (EGFETs): Estimating the Threshold Voltage, Series Resistance, and Mobility Degradation From I–V Measurements

Parameter Extraction of Extended Floating Gate Field-Effect Transistors (EGFETs): Estimating the Threshold Voltage, Series Resistance, and Mobility Degradation From <i>I</i>–<i>V</i> Measurements

Effects of metal work function and gate-oxide dielectric on super high frequency performance of a non-align junction DG-MOSFET based inverter in the sub-100 nm regime: a TCAD simulation analysis

ABSTRACT This paper presents simulation analysis of an inverter made from non-aligned double gate field effect transistors (NADGFETs) in Sub-100 nm regime. The inverter consists of n-channel NADGFET and p-channel NADGFET device with a channel length of 40 nm and 50% non-alignment between gate and source/drain. The response of the inverter was tested by a combination of gate dielectric constant (k) and metal work function (ϕ). Three gate dielectrics namely, SiO2 (k = 3.9), Si3N4 (k = 7.2), HfO2 (k = 24), and three metal work function namely tungsten (ϕ = 4.5 eV), molybdenum (ϕ = 4.75 eV), gold (ϕ = 5 eV), were considered in the NADGFET inverter. This paper defines a kϕ index as characterising parameter to explore the best response from inverter configuration with minimum propagation delay, and minimum power consumption at super-high frequency. The paper proposes to analyse the NADGNFET device, in term of ION current, ION/IOFF ratio, cut-off frequency, and gate delay. And observes that low k material with moderate metal work function gives best response. The work then simulates the inverter and group the results into voltage transfer curve (VTC), transient response, and power dissipation category. The result shows that when inverter was subjected to high frequency, all the kϕ combination responds good, however when the inverter was subjected to super-high frequency, the low value of kϕ combination performs well. Thus, the result concludes that SiO2-M2 combination will be best selection to get minimum propagation delay and dynamic power dissipation by the inverter. The test strategy presented in this paper on the basis of kϕ index can serve as benchmark to test inverter device at super-high frequency.

Two-dimensional materials memory devices with floating metal gate for neuromorphic applications

Emerging technologies such as neuromorphic computing and nonvolatile memories based on floating gate field-effect transistors (FETs) hold promise for addressing a wide range of artificial intelligence tasks. For example, neuromorphic computing seeks to emulate the human brain's functionality and employs a device that mimics the role of a synapse in the brain. However, achieving a high current ON/OFF ratio for the program and erase states of nonvolatile memory and neuromorphic computing device with a metal gate is necessary. This study demonstrates a multi-functional device based on heterostructures of transition metal dichalcogenides (TMDCs) with a metal floating gate. Five different channel materials (SnS2, WSe2, MoS2, WS2, and MoTe2) were employed, and hexagonal boron nitride (h-BN) was used as a tunneling layer. The study found that n-type SnS2 exhibits high endurance (15,000 cycles), good retention (2.4 × 105 s), and the highest current ON/OFF ratio (∼2.58 × 108) among the materials for the program and erase states. Moreover, the SnS2 device exhibits synaptic behavior and offers highly stable operation at room temperature. Furthermore, the device shows high linearity in both potentiation and depression, with good retention time and repeatable results with low cycle-to-cycle variations. Additionally, the study used an artificial neural network (ANN) for MNIST simulation of image recognition and achieved the highest accuracy of ∼92 % based on the SnS2 synaptic device experimental results. These findings pave the way for developing nonvolatile memory devices and their applications in brain-inspired neuromorphic computing and artificial intelligence systems.

Self-powered freestanding multifunctional microneedle-based extended gate device for personalized health monitoring

Online monitoring of prognostic biomarkers is critically important when diagnosing disorders and assessing individuals' health, especially for chronic and infectious diseases. Despite this, current diagnosis techniques are time-consuming, labor-intensive, and performed offline. In this context, developing wearable devices for continuous measurements of multiple biomarkers from body fluids has considerable advantages including availability, rapidity, convenience, and minimal invasiveness over the conventional painful and time-consuming tools. However, there is still a significant challenge in powering these devices over an extended period, especially for applications that require continuous and long-term health monitoring. Herein, a new freestanding, wearable, multifunctional microneedle-based extended gate field effect transistor biosensor is fabricated for online detection of multiple biomarkers from the interstitial fluid including sodium, calcium, potassium, and pH along with excellent electrical response, reversibility, and precision. In addition, a hybrid powering system of triboelectric nanogenerator and solar cell was developed for creating a freestanding, closed-loop platform for continuous charging of the device’s battery and integrated with an Internet of Things technology to broadcast the measurements online, suggesting a stand-alone, stable multifunctional tool which paves the way for advanced practical personalized health monitoring and diagnosis.