Gate Material Research Articles

Subthreshold Drain Current Model of Cylindrical Gate All‐Around Junctionless Transistor With Three Different Gate Materials

ABSTRACTA novel subthreshold drain current model has been developed for a cylindrical gate all‐around junctionless transistor with three different gate materials. The proposed device is built with three gate regions of different work functions that effectively reduce the short‐channel effects caused by quantum mechanical effects. The drain current equation is solved for all three operating regions to investigate the device switching characteristics and minimize the drain‐induced barrier lowering (DIBL), velocity saturation, mobility degradation, and tunneling. It is understood that the triple material gate structure enhances the transport efficiency of the device. The proposed analytical model is validated by comparison with Sentaurus TCAD numerical simulator results and good agreement is found to be achieved.

Nonhalogen Dry Etching of Metal Carbide TiAlC by Low-Pressure N2/H2 Plasma at Room Temperature.

Ternary metal carbide TiAlC has been proposed as a metal gate material in logic semiconductor devices. It is a hard-to-etch material due to the low volatility of the etch byproducts. Here, a simple, highly controllable, and dry etching method for TiAlC has been first presented using nonhalogen N2/H2 plasmas at low pressure (several Pa) and 20 °C. A capacitively coupled plasma etcher was used to generate N2/H2 plasmas containing active species, such as N, NH, and H to modify the metal carbide surface. The etch rate of TiAlC was obtained at 3 nm/min by using the N2/H2 plasma, whereas no etching occurred with pure N2 plasma or pure H2 plasma under the same conditions. The surface roughness of the TiAlC film etched by N2/H2 plasma was controlled at the atomic level. A smooth etched surface was achieved with a root-mean-square roughness of 0.40 nm, comparable to the initial roughness of 0.44 nm. The plasma properties of the N2/H2 plasmas were diagnosed by using a high-resolution optical emission spectrometer, detecting the NH molecular line at 336 nm. The etching behavior and plasma-surface reaction between N2/H2 plasma and TiAlC were investigated by using in situ spectroscopic ellipsometry, in situ attenuated total reflectance-Fourier transform infrared spectrometry, and X-ray photoelectron spectroscopy. The findings indicate that the N-H, C-N, and Ti(Al)-N bonds form on the TiAlC surface etched by the N2/H2 plasmas. The mechanism for etching of TiAlC involving transformation reactions between inorganic materials (metal carbides) and inorganic etchants (N2/H2 plasma) to form volatile organic compounds such as methylated, methyl-aminated, and aminated metals is proposed. Nonhalogen or nonorganic compound etchants were used during the etching process. The study provides useful insights into microfabrication for large-scale integrated circuits.

Investigations on Cylindrical Surrounding Double-Gate (CSDG) MOSFET using AlxGa1-xAs/InP: Pt with La2O3 oxide layer for fabrication.

The Cylindrical Surrounding Double-Gate MOSFET has been designed using Aluminium Gallium Arsenide in its arbitrary alloy form alongside Indium Phosphide with Lanthanum Dioxide as a high-ƙ dielectric material. The heterostructure based on the AlxGa1-xAs/InP: Pt has been used in the design and implementation of the MOSFET for RF applications. Platinum serves as the gate material, which has higher electronic immunity toward the Short Channel Effect and highlights semiconductor properties. The charge buildup is the main concern in the field of MOSFET design when two different materials are considered for fabrication. The usage of 2 Dimensional Electron Gas has been outstanding in recent years to help the electron buildup and charge carrier accumulation in the MOSFETs regime. Device simulation used for the smart integral systems is an electronic simulator that uses the physical robustness and the mathematical modeling of semiconductor heterostructures. In this research work, the fabrication method of Cylindrical Surrounding Double Gate MOSFET has been discussed and realized. The scaling down of the devices is essential to reduce the area of the chip and heat generation. By using these cylindrical structures, the area of contact with the circuit platform is reduced since the cylinder can be laid down horizontally. The coulomb scattering rate is observed to be 18.3 % lower than the drain terminal when compared to the source terminal. Also, at x = 0.125 nm, the rate is 23.9 %, which makes it the lowest along the length of the channel; at x = 1 nm, the rate is 1.4 % lesser than that of the drain terminal. A 1.4 A/mm2 high current density had been achieved in the channel of the device, which is significantly larger than comparable transistors. The conventional transistor occupies a larger area than the proposed cylindrical structures transistor and is also efficient in RF applications.

Tissue-like interfacing of planar electrochemical organic neuromorphic devices

Abstract Electrochemical organic neuromorphic devices (ENODes) are rapidly developing as platforms for computing, automation, and biointerfacing. Resembling short- and long-term synaptic plasticity is a key characteristic in creating functional neuromorphic interfaces that showcase spiking activity and learning capabilities. This potentially enables ENODes to couple with biological systems, such as living neuronal cells and ultimately the brain. Before coupling ENODes with the brain, it is worth investigating the neuromorphic behavior of ENODes when they interface with electrolytes that have a consistency similar to brain tissue in mechanical properties, as this can affect the modulation of ion and neurotransmitter diffusion. Here, we present ENODEs based on different PEDOT:PSS formulations with various geometries interfacing with gel-electrolytes loaded with a neurotransmitter to mimic brain-chip interfacing. Short-term plasticity and neurotransmitter-mediated long-term plasticity have been characterized in contact with diverse gel electrolytes. We found that both the composition of the electrolyte and the PEDOT:PSS formulation used as gate and channel material play a crucial role in the diffusion and trapping of cations that ultimately modulate the conductance of the transistor channels. It was shown that paired pulse facilitation can be achieved in both devices, while long-term plasticity can be achieved with a tissue-like soft electrolyte, such as agarose gel electrolyte, on spin-coated ENODes. Our work on ENODe-gel coupling could pave the way for effective brain interfacing for computing and neuroelectronic applications.

Steep subthreshold swing Double - Gate tunnel FET using source pocket engineering: Design guidelines

In this work, we propose a promising source engineered Double - Gate (DG) Tunnel Field Effect Transistor (TFET) device capable of providing remarkably low value of Subthreshold Swing (SS) with sufficiently high drive current. Using Sentaurus TCAD simulations, we demonstrate that counter-doped horizontal pockets (doping of pocket is kept opposite to that of source) when placed in the source region introduces a built-in band bending at the source-pocket junction. This lowers the minima of Conduction Band (CB) in pocket region thereby reducing the barrier width as the pocket CB moves closer to source Valence Band (VB). As a result, stronger electric field is observed thereby reducing the threshold voltage (onset of band-to-band tunneling (BTBT)) and subsequent reduction in subthreshold swing. To boost the ON-current and suppress ambipolarity, high-k dielectric material along with low work-function gate material is introduced at source side and low-k gate dielectric along with high work-function gate material is introduced at drain side. Compared to point tunneling in conventional TFETs, the gate overlapped pockets in the proposed structure result in an increase in cross-section area available for BTBT thereby leading to line tunneling of carriers from the source to the pocket, resulting in higher ON-current. In this work, we discuss the role of source engineering in boosting the performance of Hetero-Dielectric (HD) Dual-Metal-Double-Gate (DMDG) TFET. We provide design guidelines to achieve steeper subthreshold swing while considering pocket doping and pocket thickness as the key parameters. A comparative study of conventional DG-TFET and HD-DG-TFET with the proposed Gate-over-Pockets (GoP) HD-DMDG-TFET structure is done. When compared to the conventional DG-TFET with same geometrical parameters, the proposed structure provides ∼33× steeper SS, more than two order improved ON-current, two order lower ambipolar current and 133 folds better Ion/Ioff thus becomes the perfect choice for low power applications.

Near-infrared-responsive Prussian blue nanocages loaded with 5-fluorouracil for combined chemotherapy and photothermal therapy in tumor treatment.

Nanodrug delivery systems (NDDS) have been proposed to improve the targeting and bioavailability of chemotherapy drugs. The approach of drug loading via physical adsorption is facile to operate; however, there exists a risk of premature leakage. Coupling the drug molecules with the carrier through chemical reactions can guarantee the stability of the drug delivery process, yet the preparation procedure is relatively intricate. In this research, a kind of Prussian blue nanocage (PB Cage) was fabricated, and the phase change material, 1-pentadecanol, was used as the gating material to solidify 5-fluorouracil (5-FU) inside the nanocage. Upon irradiation with near-infrared (NIR) light, the temperature of the PB Cage can rise rapidly. When the temperature exceeds 43 °C, 1-pentadecanol undergoes a solid-liquid phase transition and subsequently releases 5-FU to inhibit DNA synthesis. Meanwhile, the photothermal therapy (PTT) mediated by the PB Cage is also capable of ablating tumor cells. The NDDS constructed based on PB has achieved the precise release of 5-FU triggered by NIR light, which may avoid side effects on normal tissues. Moreover, the combination of chemotherapy and photothermal therapy can efficaciously suppress the proliferation of tumor cells.

Effects of Group IVA Elements on the Electrical Response of a Ge2Se3-Based Optically Gated Transistor.

The optically gated transistor (OGT) has been previously demonstrated as a viable selector device for memristor devices, and may enable optical addressing within cross-point arrays. The OGT current-voltage response is similar to a MOSFET device, with light activating the gate instead of voltage. The OGT also provides a naturally built-in compliance current for a series resistive memory element, determined by the incident light intensity on the gate, thus keeping the integrated periphery circuitry size and complexity to a minimum for a memory array. The OGT gate comprises an amorphous Ge2Se3 material that can readily be doped with other elements to alter the transistor's electrical properties. In this work, we explore the operation of the OGT when the Ge2Se3 gate material is doped with the Group IVA elements C, Si, Sn, and Pb. The dopant atoms provide changes to the optical and electrical properties that allow key electrical properties such as the dark current, photocurrent, switching speed, and threshold voltage to be tuned.

Design and sensitivity study of a novel Z-shaped gate TFET sensor with SiGe source for chemical analyte detection

In this work, we have designed a chemical gas sensor using a Z-shaped gate tunnel FET with a SiGe source. Here, the gate material is a conducting organic polymer, which allows for the effective detection of a variety of chemical analytes. Over the course of the sensitivity investigation, several chemical analytes were exposed, including hexane, methanol, iso-propanol, and chloroform. Detecting chemical gases is feasible due to the work-function modification of the conducting polymer with exposure to the chemical gas vapors. This leads to modifications in the electrical properties of the suggested gas sensor, which serves as a sensing metric. The impact of surrounding temperature on various sensitivity parameters of the TFET-based gas sensor is also investigated. The proposed heterostructure Z-TFET (ZHS-TFET) offers a peak drain current sensitivity of 5.65 × 105 in the case of chloroform, which is four times higher than the sensitivity provided by the ZTFET sensor. Further, the suggested chemical sensor offers a higher subthreshold swing sensitivity (SSS) of 0.29 and a current ratio sensitivity (Sratio) of 3.18. As a result of its higher-sensitivity nature and improved electrostatic performance, the proposed sensor with conducting polymer as the gate metal may be able to meet the needs of the chemical and pharmaceutical industries, as well as environmental monitoring and biological diagnostics.

Device and circuit-level performance evaluation of DG-GNR-DMG vertical tunnel FET

This work presents the comparative study of Graphene Nanoribbon (GNR) based channel Double Gate (DG) Dual Gate Material (DMG) Vertical tunnel Field Effect Transistor (VTFET) performance with all Silicon material Tunnel Field Effect Transistor. The two-dimensional (2D) material GNR has been proposed in the channel material to enhance the device performance due to its low bandgap, high mobility, and high saturation velocity. The proposed device's DC, RF, and circuit-level performance analysis has been carried out for the first time. GNR-based channel VTFET shows a better average subthreshold swing (SSAVG) of 16 mV/decade compared to Silicon Vertical Tunnel FET (36 mV/decade) at a drain voltage VDS = 0.5 V. The study of temperature effects on the DC parameters is also included along with the analog/RF FOMs for the proposed two structures. In addition, the performances are compared with other reported works; it is observed that DG-GNR-DMG-VTFET offers better results than Silicon (Si)-based VTFET and other said TFET work. Finally, circuit-level analysis has been done by designing inverter and ring oscillator circuits for the proposed structures, and performance is compared in these two devices. The market-available Silvaco ATLAS TCAD simulator has been used for device-level simulation. Further, circuit-level analysis has been carried out in the Cadence Virtuoso tool using a look-up table-based Verilog-A model.

Analysis of nano sheet field effect transistor based on performance under different temperature and doping concentrations for 12 nm device

This paper presents a simulation study on a 12 nm Gate-all-around n-type Metal Oxide Semiconductor (GAA-nMOSFET), investigating the effects of temperature variations and doping concentrations. The structure of the device has three fins, and the channel is surrounded by gate material to reduce the short channel effect (SCE) and electrostatic capacitance. Various parameters such as threshold voltage (Vth), Ion/Ioff ratio, drain-induced barrier lowering (DIBL), and sub-threshold swing (SS) are evaluated at different temperatures 250 K, 300 K, and 350 K, doping concentrations of 1016cm−3, 1017cm−3, and 1018cm−3, with a high voltage of 0.65V. At a temperature of 250 K, in comparison to the 1016cm−3 doping concentration attention, the Vth is observed to be 0.31V, while the Ion/Ioff ratio is measured at 0.33e−14. Moreover, the DIBL experiences a reduction of 25 %, whereas the SS increases by 76 %. Furthermore, when the temperature is raised to 300 K relative to the 1017cm−3 doping concentration, the Vth increases to 0.32 V, and the Ion/Ioff current ratio rises to 0.45e−14. Meanwhile, the DIBL experiences a decrease of 20 %, and the SS increases by 71 %. Finally, at a temperature of 350 K concerning 1018cm−3 doping concentration, the Vth is measured at 0.34 V, and the Ion/Ioff current ratio reaches 0.47e−14 Concurrently, the DIBL shows a decrease of 28 %, While the SS increases to 79 %. To reduce electrostatic capacitance and leakage current, the use of a high-k dielectric material in a GAA-nMOSFET device is investigated. Improved performance traits such as decreased SCE, low DIBL, and strong SS are displayed. Additionally, the connection between threshold voltage and doping concentration is investigated. The effect of temperature variations and doping concentration on many essential characteristics of 12 nm GAA-nMOSFET shows the potential benefits of the device's unique architecture and material. The conclusions are supported through circuit schematics, simulations, and experimental data in this article.

Design of Thermosensitive Niosomes by Eutectic Mixture of Natural Fatty Acids.

In the current study, a smart release system responsive to temperature was developed to improve the efficiency of tetracycline (TC) in antibacterial therapy. The nanovesicles designed consist of a non-ionic surfactant, SPAN60, cholesterol and a phase change material (PCM) as a thermoresponsive gating material. Niosomes were prepared using an increasing amount of PCM and characterized in terms of size, zeta potential, colloidal stability and thermoresponsive properties. The vesicles that developed were homogenous in size, had good biocompatibility and stability for up to 3 months and demonstrated thermoresponsive behavior. A low drug leakage was observed at 37 °C, while a rapid release occurred at 42 °C, due to the faster diffusion rate of the drug trough the melted PCM. This controllable drug release capacity allows us to avoid premature drug release, minimizing unwanted and toxic effects and ensuring a long retention time in the nanodevice so that it reaches the infected sites. In addition, TC-loaded niosomes were screened to investigate their antibacterial activity against various Gram-positive and Gram-negative bacteria by minimum inhibitory concentration (MIC) and minimum bactericidal concentration (MBC) assays. An interesting temperature-dependent antibacterial activity was observed against some bacterial strains: the niosomes activity against S. epidermis, for example, was improved by the temperature increase, as suggested by a reduction in MIC values from 112.81 to 14.10 μM observed at 37 and 42 °C, respectively. Taken together, the thermoresponsive platform developed allows us to use lower antibiotic amounts while ensuring therapeutic efficacy and, so, will advance the development of a novel antibacterial agent in clinical practice.

Performance assessment of InGaAs–SOI–FinFET for enhancing switching capability using high-k dielectric

In this work, a high-k In0.53Ga0.47As silicon-on-insulator FinFET (InGaAs–SOI–FinFET) is presented for high-switching and ultra-low power applications at 7 nm gate length. Indium Gallium Arsenide (InGaAs) is a compound semiconductor that has gained attention in the field of semiconductor devices, including FinFETs. The incorporation of InGaAs in proposed FinFETs introduces several advantages, making it an attractive material for certain applications. InGaAs–SOI–FinFET performance has been observed and found high electron mobility, improved On-Current performance (ION), drain current (IDS), transconductance (gm), energy bands, lower subthreshold swing (SS), electric field, surface potential, and better short-channel behaviour. All the results of InGaAs–SOI–FinFET have been simultaneously compared with SOI-FinFET and conventional FinFET (C-FinFET). Incorporating InGaAs in the channel with high-k gate material enhances the drain current by ⁓75% and ⁓77% in the proposed device compared to the other two counterparts. Owing to the higher drain current in the InGaAs–SOI–FinFET, other parameters have also been improved, which leads to higher performance applications.

Technology of High-k/Metal-Gate Stack

Abstract The High-k/Metal-Gate Stack (HKMG) technology represents a seminal advancement in semiconductor fabrication, predicated upon the substitution of SiO2 with high-k dielectric materials, coupled with the integration of metal gate materials. This technological paradigm shift has emerged as a transformative response to the intricate challenges encountered within the semiconductor industry, a sector perpetually engaged in the relentless pursuit of diminishing the critical dimensions of semiconductor devices. Issues such as increased power leakage, enhanced parasitic capacitance, and the escalating complexity of gate insulators have impeded the sustainable downscaling of traditional silicon dioxide-based devices. These challenges have necessitated a comprehensive re-evaluation of the materials and processes involved in semiconductor manufacturing, leading to the conception and evolution of the HKMG technology. This article’s analysis of the developmental trajectory of HKMG technology reveals a progression marked by the systematic exploration of alternative high-k dielectric materials, rigorous compatibility assessments with metal gate materials, and the concurrent refinement of manufacturing processes to ensure seamless integration. After that, elucidating the impediments encountered during its evolution and expounding upon the corresponding ameliorative measures instituted. Looking ahead, ongoing research focusing on the synthesis of advanced high-k dielectric materials, and the development of novel metal gate materials with superior compatibility to further enhance device performance and functionality makes HKMG technology a huge prospect. Such advancements are paving the way for the realization of more powerful, energy-efficient, and compact electronic devices.

Study on trap sensitivity for single material gate and double material gate nano-ribbon FETs

In this work, the trap sensitivity of single material gate (SMG) and dual material gate (DMG) nano ribbon FETs (NRFETs) are reported using TCAD Sentaurus Device simulator. The trap sensitivity is extracted for Gaussian trap distribution of both acceptor and donor type traps. We have reported the trap sensitivity for the variation in trap concentration, energy peak position, work function of metal gate, and temperature for both the NRFETs. It is realized that trap sensitivity is greater and lesser than 100% for acceptor type trap in SMG and DMG NRFETs, respectively, whereas, such sensitivity is 147% and 123% for donor type trap concentration, respectively. Temperature also shows a significant variation in trap sensitivity for both the NRFETs. The increase in work function leads to the reduction in trap sensitivity for both NRFETs in existence of acceptor and donor trap charges. The maximum sensitivity in trap are 400% and 275% for SMG and DMG NRFETs, respectively, in presence of donor trap concentration. Moreover, the trap sensitivity is very insignificant at high gate bias for donor type trap concentration with wide variation in parameters.

P‐20: Memory Window and Endurance Improvement of In‐Ga‐Zn‐O‐Based Ferroelectric Thin Film Transistors by Inserting In‐Ga‐Zn‐O Floating Gate

We prepared oxide semiconductor‐based ferroelectric thin‐film transistors (FeTFTs) with a floating gate for memory application. Depositing oxide semiconductor on HfZrOx (HZO) as a floating gate successfully induced a polar orthorhombic phase with a larger memory window and higher endurance than conventional floating gate material TiN.

Linearity and intermodulation distortion analysis of single and dual metal gate junctionless transistor

Linearity and intermodulation distortion are very crucial parameters for RFICs design. Therefore, in this work, a detailed comparative analysis on linearity and intermodulation distortion of single metal (SMG) and double metal (DMG) double gate junction less transistor (JLT) is done using TCAD silvaco suite. Furthermore, the effects of temperature fluctuation, gate length variation, and gate material engineering on the linearity performance of both devices are also studied. A few significant figures of merit, including Voltage Intercept Point 2 (VIP2), Voltage Intercept Point 3 (VIP3), Third Order Intercept Power (IIP3), 1 dB Compression Point (P1dB), Third Order Intermodulation Distortion (IMD3), and the transconductance derivative parameters First Order Transconductance (gm1), Second Order Transconductance (gm2), and Third Order Transconductance (gm3) are used to assess the device linearity and intermodulation distortion of SMG and DMG JLT's. The findings show that higher VIP2, VIP3, IIP3, 1-dB compression point and lower gm3, IMD3 values are obtained for the SMG JLT device when compared to its counterpart DMG JLT. SMG JLT, which assures strong linearity and low distortion.

Effect of Temperature, Doping and Gate Material Engineering on Tri-Gate SOI nFinFET Performance Through TCAD Simulation

Effect of Temperature, Doping and Gate Material Engineering on Tri-Gate SOI nFinFET Performance Through TCAD Simulation

Conformation-Switchable Polypeptides as Molecular Gates for Controllable Drug Release.

The control over secondary structure has been widely studied to regulate the properties of polypeptide materials, which is used to change their functions in situ for various biomedical applications. Herein, we designed and constructed enzyme-responsive polypeptides as gating materials for mesoporous silica nanoparticles (MSNs), which underwent a distorted structure-to-helix transition to promote the release of encapsulated drugs. The polypeptide conjugated on the MSN surface adopted a negatively charged, distorted, flexible conformation, covering the pores of MSN to prevent drug leakage. Upon triggering by alkaline phosphatase (ALP) overproduced by tumor cells, the polypeptide transformed into positively charged, α-helical, rigid conformation with potent membrane-penetrating capabilities, which protruded from the MSN surface to uncover the pores. Such a transition thus enabled cancer-selective drug release and cellular internalization to efficiently kill tumor cells. This study highlights the important role of chain flexibility in modulating the biological function of polypeptides and provides a new application paradigm for synthetic polypeptides with secondary-structure transition.

Metal-organic polymer enables efficient organic photoelectrochemical transistor biosensing

The field of organic photoelectrochemical transistor (OPECT) is newly emerged, with increasing efforts attempting to utilize its properties in biological sensing. Advanced materials with new physicochemical properties have proven important to this end. Herein, we report a metal-organic polymers-gated OPECT biosensing exemplified by CuⅠ-arylacetylide polymers (CuAs)-modulated poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) channel. Both the photoelectrochemical properties and gating capability of CuAs are explored and optimized for high-efficacy photogating. Morever, based on its inherent structure, the specific reaction between CuAs and sulfur ions (S2−) is revealed and S2−-mediated microRNA-21 detection is realized by linking with nucleic acid amplification and alkaline phosphatase catalytic chemistry. This work introduces metal-organic polymers as gating materials for OPECT biosensing.

Combination of Chemical and Physical Cancer Therapeutics Developed with Microcapsules Made of κ-Casein and Gold Nanoparticles in the Presence of Drug-Loaded Phase Change Materials.

Tumor heterogeneity requires development of an anticancer system equipped with both chemical and physical therapeutics to eradicate cancer exhibiting drug resistance and clonal evolution into diverse tumor cells. Assortment of various toxic components into one platform without compromising their individual toxic activity remains a formidable task. Herein, a novel drug delivery system (DDS) exerting potent cytotoxicity toward cancer cells was fabricated with gold nanoparticles (AuNPs) coated with an innocuous self-assembly protein of κ-casein (κC). Pickering emulsions of the κC-AuNP conjugates in the presence of chloroform inside led to the κC-AuNP microcapsules being stabilized via robust β-sheet formation between κC molecules located on the single-layered shell made of κC-AuNPs. Phase change material (PCM) comprising a eutectic mixture of lauric acid and myristic acid with the melting point of 43 °C was encapsulated in the presence of a hydrophilic anticancer drug of doxorubicin (Dox), in which the PCM has played multiple functions such as drug-holding matrix and thermoresponsive gating material for drug release. Once liberated with the heat generated by the AuNPs upon a near-infrared (NIR) irradiation at 808 nm, the PCM by itself exhibited not only chemical cytotoxicity but also physical toxic effects such as membrane destabilization of the cells and a possible cellular fixative effect toward cancer cells by the solidified PCM at body temperature. Moreover, the PCM was shown to facilitate the intranuclear localization of Dox. As a result, the DDS comprising κC-AuNP microcapsules containing Dox-loaded PCM was demonstrated to show a powerful anticancer effect upon the NIR irradiation, which unleashed several toxic agents such as Dox, PCM, heat-generating AuNPs, and tissue-immobilizing solidified PCM. Therefore, the κC-AuNP microcapsules would serve as an anticancer system into which diverse chemical and physical therapeutic agents could be combined to effectively remove the heterogeneous and drug resistant cancer cells.