A high-side gate driver circuit with adaptive dead-time control

Dual-output compact gate driver circuit design with embedded combinational logic for oxide TFT-based AMOLED displays

Bi-directional gate driver on array with controllable TDDM block for in-cell touch display

An MMC is widely applied to the HVDC power transmission system. With a large number of insulated gate bipolar transistors (IGBTs) utilized in MMC-HVDC converter stations, an extremely complicated EM environment is generated due to the dv/dt and di/dt during the IGBT switching process. A magnetic field simulation model is proposed to calculate the magnetic field generated by a 4.5 kV/5 kA IGBT-based MMC submodule under the DPT, with the dynamic switching behavior of IGBTs considered. Firstly, a behavior model of 4.5 kV/5 kA IGBTs is built with the help of commercial software. To validate its effectiveness, a DPT simulation model is built. A comparison between the simulation result and the measured data is performed. Finally, a quasi-static Maxwell model is utilized to approximate the near field caused by the current Ic of the DPT. The simulation result of the magnetic field strength at the point near the gate driver PCB is verified by the measurement data. The proposed magnetic field simulation model can help to analyze the EMI behavior and EMI design for MMC-HVDC submodules under DPT.

This paper presents a high-efficiency wireless power transfer (WPT) architecture employing a resonant inductive coupling to power smart sensor nodes in remote or sealed environments, where conventional power delivery is unfeasible. The system integrates a photovoltaic (PV) energy source with a step-down DC-DC converter based on the LM2596 buck regulator to adjust the voltage from the PV. The proposed conditioned power system supplies the entire electronic circuit consisting of a PWM modulator based on an NE555, which drives an IR2110 gate driver connected to a Class D power amplifier. The amplifier excites a pair of high-Q resonant coils designed for mid-range inductive coupling. On the receiver side, the inductively coupled AC signal is rectified and regulated through an AC-DC conversion stage to charge a secondary energy storage unit. The design eliminates the need for physical electrical connections, ensuring efficient, contactless energy transfer. The proposed system operates at a resonant frequency of 24.46 kHz and achieves up to 80% transmission efficiency at a distance of 113 mm. The receiver provides a regulated DC output between 4.80 V and 4.97 V, sufficient to power low-consumption smart sensors.

Silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFETs) hold a significant position in high-power applications due to their excellent thermal and electrical performance. However, due to their small size, SiC MOSFETs are more susceptible to short-circuit (SC) events than their counterparts. Therefore, effective SC protection is crucial to prevent device failure under extreme conditions. With the growing demand for faster and more reliable protection systems, operational amplifiers (op-amps) play a key role in short-circuit detection systems for SiC MOSFETs. This article explores the role of op-amps in SiC MOSFET short-circuit detection and prevention systems. It will introduce several detection methods and their integration with gate drivers to improve response speed. Furthermore, this article will discuss voltage swing sensing, gate current sensing, and current derivative sensing. It will also examine the challenges of achieving consistent protection under varying conditions. To address these challenges, this article, through case studies and recent advances, aims to highlight the potential of op-amp-based solutions to improve the consistency and reliability of SiC MOSFETs, laying the foundation for more efficient power systems of the future.

High voltage gate driver IC with integrated bootstrap circuits for floating channels supply

This paper presents the comprehensive design of a drive circuit for low-power brushless DC (BLDC) motors based on the Field-Oriented Control (FOC) algorithm. To meet the demands of applications requiring high efficiency, high precision, and a compact form factor, this design integrates carefully selected components into a robust system. The core of the control system is an STM32F405RGT6 microcontroller, which provides the necessary computational performance for complex FOC algorithms. A DRV8301 integrated gate driver is utilized to drive the three-phase MOSFET inverter bridge, simplifying the power stage and incorporating essential features such as a buck converter and various protection circuits. For accurate feedback, the circuit employs a high-side, three-shunt current sensing architecture with AD8418 amplifiers, enabling precise current measurement. The design also includes stable power management, a CAN bus interface for reliable communication, and sensors for voltage and temperature monitoring. The resulting hardware provides a highly integrated, efficient, and reliable solution for the precise control of low-power BLDC motors in applications like robotic joints, drones, and advanced consumer electronics.

Bidirectional Signal and Power Co-Transmission Techniques in Isolated Gate Driver for SiC MOSFET

Monolithically Integrated Bootstrapped Gate Driver With a 200-V GaN Power Switch

Advanced Dual-Channel Gate Driver With Short-Circuit Protection for Series-Connected Medium-Voltage SiC MOSFETs

Abstract A high-voltage silicon carbide (SiC) laterally diffused metal oxide semiconductor (LDMOS) with an integrated low-voltage gate driver buffer circuit is proposed. This approach integrates the low-voltage gate driver circuit with the high-voltage power LDMOS device into a single chip. The experimental results demonstrate that the gate drive buffer is capable of driving the LDMOS to operate with a load current of 0.4 A. Under the control of the gate drive buffer circuit, the LDMOS exhibits an excellent turn-on time of 28 ns and a turn-off time of 23 ns.

Abstract This article introduces a novel switched-capacitor multilevel inverter (SCMLI) topology that achieves octuple voltage boosting while employing a low component count. To achieve a 17-level output voltage, the proposed topology incorporates a single DC input source, ten semiconductor switches, three capacitors, and three diodes. By employing a parallel-series charging and discharging pattern, the capacitors autonomously balance their voltage without relying on external circuits or sensors, thereby simplifying control mechanism. A comprehensive analysis with recently developed 17-level SCMLI systems is conducted, emphasizing the merits and functional benefits of the proposed structure in terms of voltage gain, power losses, and total standing voltage (TSV). Furthermore, the analysis also considers the reduction in key components such as diodes, capacitors, gate driver circuits, and semiconductor switches. The suggested design is especially suited for renewable energy systems, such as grid and load interfacing. The efficacy of the proposed SCMLI module is validated through offline simulation in a MATLAB/Simulink platform utilizing the in-phase disposition level-shifted multicarrier (IPD-LSM) modulation scheme. Additionally, the power losses of system components under various operating conditions are evaluated through the Piecewise Linear Electrical Circuit Simulation (PLECS) software platform. The proposed inverter achieves a peak efficiency of 96.27% at an output power of 250 W, with voltage THD of 5.23% and current THD of 2.25% under rated operating conditions. To further validate the performance, real-time testing is conducted using the Typhoon HIL604 emulator, confirming the accuracy of offline simulation results.

ABSTRACTGate drivers for high‐voltage silicon carbide (SiC) converters require a reliable power supply with strong isolation and compact size. However, existing gate driver power supplies (GDPS) with the transformer structure make it difficult to enhance the isolation performance while keeping the small coupling capacitance and volume. This paper firstly presents a novel wireless GDPS with an improved Class‐E inverter for high‐voltage energy harvesting applications. The proposed design requires only one switch and reduces the input inductor significantly. Meanwhile, it solves the issue of harmful surge currents and maintains a zero‐voltage‐switching state when the load changes. Finally, a compact wireless GDPS prototype is developed and the insulation characteristics are studied. Results demonstrate that the proposed design achieves isolation voltage up to 17.7 kV with the smallest size volume and extra‐low coupling capacitance of 1.83 pF.

It presents a thorough analysis of Multilevel Inverter (MLI) topologies. The standard two-level converters are expensive, heavy, and cause substantial switching loss in order to obtain the sinusoidal output waveform. This is due to the requirement of the filter circuit. Multilevel Inverter topologies are becoming increasingly popular in power electronics inverters as a solution to this issue in recent years. The Multilevel Inverter configuration, which generates output voltage in more than two levels to get the stepped voltage minimizing total harmonic distortion (THD) and lowering switching frequencies, eliminates the need for bulky transformers and filter circuits. To assess the inverter efficiency, the optimal output voltage with less harmonic content requires the correct switching mechanism. In order to achieve excellent power quality and minimal switching loss, the power consumption must also be taken into consideration while choosing the topology and control method. However, because separate gate drivers are used for the switching components, it is vital to reduce count of semiconductors because this increases the complexity of the circuit. The advantages, disadvantages, and applications of MLI topologies are deliberated in this work.

ABSTRACT This paper highlights a low voltage and low power self-startup autotransformer-based oscillator circuit as a gate driver circuit for dc–dc boost converters. The uncontrolled and component dependent gain and frequency of oscillation of the oscillator circuit make it not suitable as a gate driver circuit for low voltage dc–dc boost converters. The proposed circuit consumes low power compared to existing oscillator circuits due to the low component count and elimination of interwinding capacitor loss. The simple gain control technique with a resistive divider makes this a unique frequency independent gain-controlled oscillator circuit as well as a gate driver circuit. The proposed oscillator circuit self-starts at 12.3 mV and at an input power of 1.06 µW and generates pulses of 2.7 V peak to peak amplitude with a frequency of 102 kHz. The gain control facility makes it a wide operating voltage 9 mV to 1 V, making the present development suitable for thermoelectric generators (TEGs), microbial fuel cells, or for single solar cell-based IoT applications.

Active Voltage Balancing of Series-Connected SiC MOSFETs During Body-Diode Turn-Off Using an Active Gate Driver

A Self-Regulating Active Gate Driver of Voltage Overshoot Suppression for SiC MOSFETs Under Variable Load Current Conditions

A GaN HEMT Active Gate Driver to Combat Turn-Off Drain-Source Voltage Overshoot and EMI Based on Magnetic Coupling Closed-Loop Control

A T-Shaped High Isolation Gate Driver Power Supply for Medium-Voltage SiC Half-Bridges