Ionic gating control of carrier transport and thermoelectric properties in semiconductors

Tin disulfide (SnS2) exhibits strong photoresponse and strong gate controllability, making it a promising material for optoelectronic integrated circuits. However, its intrinsically high on-state dark current severely constrains further improvement of photosensitivity and limits its potential for low-power applications. In this work, we develop a low-dark-current, high-responsivity, and highly stable phototransistor based on a (PEA)2PbI4/SnS2 van der Waals heterostructure via an all-dry transfer technique. Importantly, we demonstrate that gate-voltage tuning enables the device to overcome the long-standing responsivity-speed trade-off typically observed in photodetectors. With interfacial modification provided by (PEA)2PbI4, the on-state dark current of the SnS2-channel phototransistor is reduced by approximately 2 orders of magnitude. The device exhibits high photodetection performance, achieving a maximum responsivity of 218 A W-1, a specific detectivity of 3.97 × 1012 Jones, and an external quantum efficiency of 47,447%. Moreover, the phototransistor remains operational after 4000 h of storage under ambient conditions, with the dark current increasing by less than 3 nA, demonstrating long-term environmental stability. Notably, the photoresponse time decreases monotonically with increasing gate voltage, while the responsivity simultaneously increases, representing an unconventional behavior opposite to that of conventional photodetectors and effectively breaking the traditional responsivity-speed trade-off. The strategy presented here can be widely applied to two-dimensional perovskite/two-dimensional metal-sulfide heterostructures for constructing high-performance optoelectronic devices.

The continuous scaling of semiconductor devices necessitates the integration of high-permittivity (high-k) dielectrics to maintain gate control and reduce power consumption. Here, we report an ultrahigh dielectric constant (k) of ∼150 in ultrathin (10 nm) β-gallium oxide (β-Ga2O3) metal-insulator-metal capacitors. Photoresponse and microstructural analyses link the giant permittivity to an oxygen vacancy (VO)-ordered phase. The fabricated capacitors exhibit excellent performance for memory applications, including low dielectric loss (<0.02 at 100 kHz), low leakage current (<10-7 A/cm2), high operating speed (>20 MHz), and high endurance (>1010 cycles). To validate practical utility, MoS2 field-effect transistors gated by β-Ga2O3 were fabricated, exhibiting a high on/off ratio (>106), a low subthreshold swing (SS) of 68.1 mV/dec, negligible hysteresis (5.8 mV), and ultralow gate leakage (∼10-13 A). These findings establish ultrathin β-Ga2O3 as a compelling high-k material for next-generation logic and memory devices.

Advanced electronics in the post-Moore era require foundry-level performance enhancements. Carbon nanotube field-effect transistors, compatible with commercial silicon manufacturing, surpass the fundamental performance limits of silicon field-effect transistors. However, interface imperfections between carbon nanotubes and the dielectric cause poor gate controllability and current leakage. This work demonstrates that organic molecules near the carbon nanotubes can be mitigated by high-energy γ-ray irradiation. The treatment reduces off-state current density to 112.2 pA μm-1, approaching the 100 pA μm-1 low-power target, and achieves an on/off ratio of ~105. The quasi-gate-all-around architecture shows radiation tolerance up to 100 Mrad(Si), surpassing traditional silicon-based devices by over two orders of magnitude. This foundry-compatible strategy operates at room temperature with high throughput, advancing the practical application of nanotube transistors.

The continued miniaturization of transistors has led to modern electronics, but traditional silicon-based devices are facing severe challenges, particularly in extreme environments such as space. The severe space conditions, radiation, extreme temperature changes, and vacuum require devices that are more rugged and have higher performance. In this work, the performance of nano-transistors, specifically Junctionless Field-Effect Transistors (JLFETs), Fin Field-Effect Transistors (FinFETs), and Nanosheets using new III-V semiconductor materials, has been studied. Short-channel effects (SCEs) such as drain-induced barrier lowering (DIBL) and subthreshold swing (SS) become increasingly important as transistors are scaled down, degrading performance and increasing power consumption. Nano-transistors are prospective architectures that offer better gate control over the channel, essentially preventing these SCEs from happening as opposed to conventional planar transistors. Additionally, material substitution through the exploitation of III-V materials, such as Indium Gallium Arsenide (InGaAs) and Gallium Arsenide (GaAs), has the potential to increase operating speeds and reduce power, which are critical values in space-based systems. A comparative study has been conducted between the electrical characteristics of JLFETs and FinFETs using III-V materials, including on-current, off-current, and the ION/IOFF ratio. Their resistance to the stresses of individual space environments, including radiation damage and temperature cycling, is also considered in this work. The purpose of this work is to provide a comparative foundation for selecting the most desirable nano-transistor structure and material combination for future space applications, where maximum performance and reliability are the primary factors.

Postoperative pain is a common physiological response following surgical procedures, and its suboptimal management can have physiological and psychological effects, including sleep disturbances, decreased functional capacity, increased anxiety, and deterioration in quality of life. This scoping review aims to describe the empirical evidence regarding the effectiveness of music therapy in reducing the intensity of postoperative pain in surgical patients. A systematic search was conducted through four major databases (ScienceDirect, PubMed, Neliti, and Google Scholar) using Boolean operators and keywords such as ‘postoperative pain,’ ‘music therapy,’ and ‘pain scale.’ Inclusion criteria included articles published in the last decade, in English or Indonesian, and available in full text format. In accordance with PRISMA-ScR guidelines, this review analysed 10 articles. The synthesis of results showed that music therapy consistently reduced pain intensity, anxiety, and analgesic requirements through mechanisms such as increased endorphin secretion, decreased stress hormone levels, and activation of the gate control theory. Typically administered for 15–30 minutes, music therapy is a safe, cost-effective, and patient-acceptable non-pharmacological modality. This intervention is recommended as an adjunct component in perioperative pain management in nursing practice, although further standardised research is needed to improve consistency.

Biological NaK channels integrate exquisite ion selectivity with dynamic gating to regulate life processes, yet achieving such multifunctionality in synthetic channels has remained a formidable challenge. Here, we present a metal-organic framework (MOF) channel membrane that combines two complementary ion-conduction motifs: carboxyl groups from UiO-66-COOH and carboxybenzo-15-crown-5 (15C5-COOH), assembled in a one-step coordination strategy. This hybrid architecture recapitulates essential NaK channel functions, offering both ultrahigh ion selectivity and controllable gating. The membrane enables highly selective conduction of monovalent cations while effectively excluding Mg2+, yielding M+/Mg2+selectivity above 102. Under mixed-ion conditions, it achieves unprecedented Na⁺/K⁺ selectivity exceeding 103, far surpassing reported artificial ion channels. Remarkably, Mg2+ ions dynamically gate Na⁺ and K⁺ transport with sustainable on-off ratios around 30. These outstanding performances arise from the synergistic interplay of crown ether and carboxyl groups confined within subnanometer MOF pores. This work establishes a versatile strategy for designing multifunctional artificial ion channels, opening avenues toward advanced ionic devices for artificial cells and biomedical technologies.

Labor pain remains a significant challenge during childbirth. While epidural analgesia is highly effective, it is associated with limitations such as breakthrough pain, motor blockade, and epidural-related maternal fever. Auricular acupressure, a non-pharmacological complementary therapy derived from Traditional Chinese Medicine, may modulate pain perception through gate control theory and biochemical mechanisms. This randomized controlled trial assesses whether combining auricular acupressure with epidural analgesia provides superior pain control compared to epidural analgesia alone. Fifty nulliparous women at term requesting epidural analgesia were randomized to receive either true auricular acupressure at specific points (Shenmen, Subcortex, Genitalia, Sympathetic) or sham non-acupoints stimulation. Pain scores were assessed using a Visual Analog Scale at baseline (cervical dilation 2-3 cm), 30 min post-epidural, and at full cervical dilation (10 cm). Secondary outcomes included local anesthetic consumption, incidence of breakthrough pain, and epidural-related maternal fever, Apgar scores, and maternal satisfaction. The protocol emphasizes accurate acupoint localization, blinding procedures, and standardized outcome assessment to ensure reliable results.

Time-Sensitive Networking (TSN), particularly the Time-Aware Shaper (TAS) specified by IEEE 802.1Qbv, is critical for real-time communication in Industrial Sensor Networks (ISNs). However, many TAS scheduling approaches rely on centralized computation and can face scalability bottlenecks in large networks. In addition, global-only schedulers often generate fragmented Gate Control Lists (GCLs) that exceed per-port entry limits on resource-constrained switches, reducing deployability. This paper proposes a two-phase distributed genetic-based algorithm, 2PDGA, for TAS scheduling. Phase I runs a network-level genetic algorithm (GA) to select routing paths and release offsets and construct a conflict-free baseline schedule. Phase II performs per-switch local refinement to merge windows and enforce device-specific GCL caps with lightweight coordination. We evaluate 2PDGA on 1512 configurations (three topologies, 8–20 switches, and guard bands ). At ns, 2PDGA achieves 92.9% and 99.8% CAP@8/CAP@16, respectively, compliance while maintaining a median latency of 42.1 s. Phase II reduces the average max-per-port GCL entries by 7.7%. These results indicate improved hardware deployability under strict GCL caps, supporting practical deployment in real-world Industry 4.0 applications.

Abstract This work presents a comprehensive thickness- and channel-length-dependent analysis of MoS 2 MOSFETs using a combined COMSOL drift–diffusion and Python-based NEGF quantum-transport framework. Monolayer, bilayer, four-layer, six-layer, and bulk MoS 2 channels were evaluated across 50–100 nm lengths to capture the coupled effects of quantum confinement, interlayer screening, and short-channel electrostatics. The results reveal strongly thickness-dependent behaviour: monolayer devices offer excellent gate control but limited current drive; bilayer devices improve mobility with moderate electrostatics; six-layer and bulk channels show degraded control with high SS and positive DIBL. Significantly, four-layer MoS 2 consistently outperforms all other configurations, exhibiting the lowest SS (≈62–82 mV/dec), highest g m , maximum intrinsic gain, and robust negative DIBL across all channel lengths. Electrostatic and charge-centroid analysis confirms that four layers achieve the optimal balance between gate coupling and screening. These results establish four-layer MoS 2 as the most promising configuration for high-performance and low-power 2D MOSFET design.

Acid-sensing ion channels (ASICs) achieve millisecond-gated control over ion permeation through global conformational shifts induced by their acidic pockets. Inspired by this mechanism, we developed a pH-responsive artificial transmembrane transport system by biomimetically reconstructing an acidic pocket domain through the incorporation of a carboxyl-rich cluster into a pillararene–cyclodextrin hybrid scaffold. Transmembrane transport experiments confirmed that this artificial system forms stable, cation-selective ion channels, with its carboxyl groups acting as pH sensors to mediate reversible switching between ON and OFF transport states. Crucially, the gating mechanism is driven by pH-triggered in situ conformational changes, mirroring that of natural ASICs. Stopped-flow experiments further demonstrated that this biomimetic system exhibits millisecond-timescale gating kinetics under pH modulation, achieving response rates comparable to those of natural ion channels.

The silicon nanowire gate-all-around (SiNW GAA) is one of the technologies with potential for improved short-channel behavior and gate control over conductivity. This work investigates the impact of various geometrical sizes on the electrical properties of SiNW GAA tunneling field-effect transistor (TFET). The gate oxide thickness (TOX), channel radius, type of dielectric, gate metal work function, with low or high drain voltage are varied to analyze the electrical characteristics of SiNW GAA TFET. The electrical characteristics studied in this work consist of subthreshold slope (SS), current ratio, and threshold voltage (Vth). The findings indicate that an oxide thickness of 3 nm, a channel radius ranging from 10 nm to 18 nm, and the use of SiO2 as a dielectric material are optimal for achieving superior characteristics in SiNW GAA TFETs.. The gate metal TiN exhibits a work function that, in conjunction with a drain voltage of 0.5 V, optimally enhances device performance. This study highlights the potential of GAA nanowire TFETs to drive innovation in semiconductor technology through superior electrical performance.

Innovating electronic devices to mimic human brain behaviors has been a long-standing desire. (Mehonic, A., Kenyon, A. J. Brain-inspired computing needs a master plan. Nature 2022, 604, 255-260 and Mead, C. Neuromorphic electronic systems. Proceedings of the IEEE 1990, 78, 1629-1636). Here, we present a semi-floating body memory (SFBM) exhibiting various human brain-like memory behaviors. The SFBM is designed similarly to a p-type silicon-on-insulator (SOI) MOSFET, except that a metal/graphene/silicon overlapping heterojunction is formed close to the drain. The proper operation of device terminal bias voltages introduces and modulates the impact ionization (II) at the heterojunction interface and forms an ungated semi-floating body underneath for charge storage, further enabling multiple unique memory behaviors. The SFBM achieves a fresh retention time of ∼1 h, 300× that of the conventional floating body memory. Importantly, the retention time is extended to over a day by the read operation, precisely mimicking the revisitation behavior of human memory. In addition, the SFBM responds to a 20 ns write pulse in a few seconds, and it mimics the shocking behavior of the human brain in response to a very fast and strong stimulus.(Kim, J. J. & Fanselow, M. S. Modality-Specific Retrograde Amnesia of Fear. Science 1992, 256, 675-677 and Brewin, C. R. Memory and Forgetting. Current Psychiatry Reports 2018, 20, 87). Finally, the back gate control of the SFBM enables real-time quantification of the device current up to 4 orders of magnitude; this resembles the hormone regulation of synaptic weights in the human brain. All these brain-like features position the SFBM as a strong candidate for brain-inspired computing units, and a 1T-1S content-addressable memory (CAM) cell is experimentally demonstrated using a minimum number of transistors for future compute-in-memory (CIM) purposes.

Open-channel irrigation systems often face constraints due to water supply uncertainty and insufficient gate control precision. This study proposes an integrated framework for canal water allocation and gate control that combines interval-based uncertainty analysis with intelligent optimization to address these challenges. First, we predict the inflow process using an Auto-Regressive Integrated Moving Average (ARIMA) model and quantify the range of water supply uncertainty through Maximum Likelihood Estimation (MLE). Based on these results, we formulate a bi-objective optimization model to minimize both main canal flow fluctuations and canal network seepage losses. We solve the model using the Non-dominated Sorting Genetic Algorithm II (NSGA-II) to obtain Pareto-optimal water allocation schemes under uncertain inflow conditions. This study also designs a Fuzzy Proportional–Integral–Derivative (Fuzzy PID) controller. We adaptively tune its parameters using the Particle Swarm Optimization (PSO) algorithm, which enhances the dynamic response and operational stability of open-channel gate control. We apply this framework to the Chahayang irrigation district. The results show that total canal seepage decreases by 1.21 × 107 m3, accounting for 3.9% of the district’s annual water supply, and the irrigation cycle is shortened from 45 days to 40.54 days, improving efficiency by 9.91%. Compared with conventional PID control, the PSO-optimized Fuzzy PID controller reduces overshoot by 4.84%, and shortens regulation time by 39.51%. These findings indicate that the proposed method can significantly improve irrigation water allocation efficiency and gate control performance under uncertain and variable water supply conditions.

Field-effect transistors (FETs) with sub-60 mV/decade subthreshold swing (SS) at room temperature are highly sought after for enabling next-generation ultralow-power integrated circuits (ICs). We present a van Hove source (VHS) FET that exploits the steeply declining density of states (DOS) at the van Hove singularity in a one-dimensional (1D) semiconductor to overcome the Boltzmann limit on switching performance in conventional FETs. The VHS FETs built on individual semiconducting carbon nanotubes (CNT) exhibit a room temperature SS of 49 mV/decade. This steep switching behavior is achieved by electrostatically tuning the source Fermi level through a control gate. Compared with the 22-nanometer-node silicon FETs, a comparable on-state current is obtained in our VHS FETs with a 450 nm gate length but at a reduced supply voltage of 0.5 V (versus 0.75 V for silicon). VHS engineering may offer a generalizable pathway for 1D semiconductors to lower SS and even construct steep-slope transistors that simultaneously deliver ultralow power, high performance, and scalability.

Research Problem: Despite the efforts by management of Kwara State Polytechnic, Ilorin to strengthen gate control systems and expand the security workforce, the institution still grapples with issues such as theft in student hostels and cult-related intimidation. Methods/Theory: The study was guided by Hirschi’s (1969) Social Control Theory. The study employed content analysis. The population for this study was 17,115 while was 391 derived by Taro Yamane (1967) formula to determine sample size. Out of the 391 copies of questionnaire administered, 349 were retrieved and analyzed using SPSS version 25. Results: Findings indicated that security officers play a vital role in deterring and detecting criminal activities through regular patrols, surveillance, and visible presence. Respondents acknowledged the officers’ efficiency in managing entry points, responding swiftly to incidents, and fostering cooperation with external agencies. Furthermore, security education programs were found to enhance awareness and community participation in safety initiatives. Conclusion: The study demonstrated that security officers are a vital component of crime prevention and safety management at Kwara State Polytechnic, Ilorin. The majority of students and staff expressed strong confidence in the officers’ ability to deter, detect, and respond to crime. Regular patrols, effective access control, and prompt emergency response were identified as key operational strengths contributing to a sense of safety and trust across the campus. Key Contribution to Knowledge: The study investigated the impact of security personnel on crime prevention and safety management at Kwara State Polytechnic, Ilorin. It examined the roles of security personnel in crime prevention within polytechnic campuses as well as the effectiveness of security personnel in curbing crime and maintaining safety in Kwara State Polytechnic. Recommendation: The study recommended that trained, visible, and well-equipped security personnel significantly improve campus safety and create a conducive learning environment. It recommends that the Polytechnic Management and Security Unit, in collaboration with the Nigerian Police Force, should intensify patrols, install more CCTV systems, enhance inter-agency collaboration, and organize regular capacity-building programs for security personnel to strengthen campus crime prevention and safety management.

Inspired by natural ligand-gated ion channels, artificial counterparts are of great interest for understanding biological transport mechanisms and developing bioinspired functional systems. Here, we report a Zn2+-activated artificial ion channel from a [2]rotaxane. Its key components are: i) a sliding bis(benzo-18-crown-6) unit for K⁺ transport and ii) a Zn2+-responsive terpyridine thread that provides gating control. The monomeric rotaxane functions as an inactive carrier, whereas Zn2+-induced dimerization triggers a switch to a highly efficient channel transport mode. This transition is fully reversible with Zn2+ and competitive ligands. As the first biomimetic Zn2+-gated artificial ion channel, this work provides a novel design strategy for ligand-regulated transmembrane transporters.

Deep learning greatly advances large-scale predictions of enzymatic structure, function, and properties. However, existing deep learning models remain limited in high-performance screen of functional enzymes, due to a lack of multimodal learning and multitask prediction capabilities. To address these challenges, CACLENS (Cross-Attention & Contrastive Learning-enabled Enzyme Selection) is introduced, a multitask deep learning framework incorporating Customized Gate Control, contrastive learning, and cross-attention mechanisms. CACLENS demonstrates robust performance across three key functions-reaction type classification, EC number prediction, and reaction feasibility assessment with fewer computational resources. These three functions are seamlessly incorporated into the enzyme screening pipeline for efficient screening of desired enzymes in biosynthesis and biodegradation processes, thereby significantly expediting the discovery of industrial enzymes. Using CACLENS, 10 potential degrading enzymes against Zearalenone (ZEN) are predicted and expressed, and one of them achieves a degradation efficiency of over 90% for ZEN and its analogue α-ZOL. In addition, a user-friendly web server for CACLENS is established and is accessible at https://ai.caclens.com/ for researchers to discover catalytic elements.

We present experimental measurements and analysis of leakage errors occurring during resonant digital control of a superconducting qubit. By increasing the amplitude of the digital pulse trains and therefore decreasing the duration of the control gates, from 100 to 40 ns for a π-gate, the leakage error rate measured per Clifford gate in a randomized benchmarking test increases from 4.3×10−4 to 2.4×10−3 and becomes the dominant source of single-qubit gate errors for our qubit; these error rates are 1–2 orders of magnitude larger than we measure when controlling the same qubit using traditional, shaped-analog signals. Simulations show the dominant leakage mechanism arises from the increased spectral power of the pulse trains at the frequency ω12 corresponding to excitations from the first excited state |1⟩ to the second excited state |2⟩. Our measurements demonstrate the fundamental limits to resonant digital control of low-anharmonicity qubits and outline the trade-off between reducing gate times while preserving gate fidelity. We discuss possible strategies for mitigating this issue in future digital control implementations.

Abstract This paper proposes a dual-workfunction gate-controlled heterojunction tunneling field-effect transistor (DWGC-HJTFET) biosensor. The control gate of DWGC-HJTFET is divided into two parts namely tunneling gate (TG) and auxiliary gate (AG) with different workfunctions ΦM1 and ΦM2, and the detection sensitivity of different biomolecules can be regulated by adjusting the values of ΦM1 and ΦM2, and a nanocavity is constructed beneath the tunneling gate to detect biomolecules near the device surface. Additionally, the source/channel interface of this device adopts a GaSb/AlInSb heterostructure, which increases the tunneling area and enhances the interband tunneling rate through band engineering concept. The influence of different control gate workfunctions on the sensitivity is investigated, and the device-level gate effects are simulated using neutral and charged biomolecules, and the impact of different dielectric constants on the sensitivity is also explored. Simulation results show that the proposed biosensor has a switching ratio of up to 1012, a maximum current sensitivity of 4566.9, and the highest average subthreshold swing (SS) sensitivity reaches 0.62.