AlGaAs Research Articles

Growth and spectral properties of Er3+/Yb3+/Ce3+:YPO4 crystal

Er3+/Yb3+/Ce3+ tir-doped YPO4 crystals were successfully synthesized by high temperature solution method with Pb2P2O7 as flux. The growth, structures and spectral characterizations, including polarization absorption spectra, polarization fluorescence spectra and lifetime, were systematically discussed. It has broad absorption band around 973 nm with a full width at half maximum of 20.76 nm and 14.71 nm for π- and σ-polarizations, respectively, which is suitable for efficient pumping of InGaAs laser diodes. Based on J-O theory, spectral parameters such as oscillator strength, line strength, J-O intensity, fluorescence branching ratio, spontaneous transition rate and radiation lifetime were calculated systematically. In the polarization fluorescence spectra, four strong emission peaks were observed at 1505, 1537, 1561 and 1586 nm. The results show that Er3+/Yb3+/Ce3+:YPO4 crystal may be a promising laser crystal suitable for 1.5–1.6 μm.

Effect of cell structures on electrical degradation of GaAs laser power convertors after 1 MeV electron irradiation and structure-optimization for improving radiation resistance

Laser wireless power transfer (LWPT) technology holds significant promise for wireless power transmission in space, necessitating that high-efficiency GaAs laser power convertors (LPCs) have strong tolerance to high-energy particle radiation. Therefore, the degradation characteristics of GaAs LPCs with different architectures under 1 MeV electron irradiation were investigated. Experimental and simulation results demonstrate that LPCs with thicker bottom cells suffer from significantly more electrical degradation. The degradation is primarily due to a reduction in electron concentrations in the base of the bottom cells, which is considerably less pronounced as the thickness of the bottom cells decreases. Based on these analyses, thinning the thickness and optimizing the doping profile for the bottom cells are proposed to improve the radiation resistance of the LPCs. Simulations show that the electrical degradation of the optimized four-junction LPCs is notably less than that of the original four-junction LPCs under the same irradiation conditions, indicating that the proposed strategies effectively enhance the radiation resistance of the LPCs.

Efficient and widely tunable mid-infrared sources using GaAs and AlGaAs integrated platforms for second-order frequency conversion

Integrated coherent mid-infrared (mid-IR) sources are crucial for spectroscopy and quantum frequency conversion (QFC) to facilitate scalable fiber-based application of single photons. Direct mid-IR emission with broad tunability poses fundamental challenges from the gain media and mirror components. This paper presents a characterization of a second-order nonlinear platform. It showcases a mid-IR parametric coherent source with a continuous tuning range exceeding 230 nm centered around 2425 nm, achieved through difference-frequency generation (DFG). The nonlinear coefficient d14 of gallium arsenide (GaAs) and aluminum gallium arsenide (AlGaAs) on insulator is experimentally determined via second-harmonic generation (SHG) in waveguides of various lengths, and the tolerance of the process is investigated. These materials are explored for their high conversion efficiency, utilizing monolithic epitaxial quantum dots and integrated waveguides for QFC. The results demonstrate efficient and tunable mid-IR emission suitable for compact, scalable quantum emitters, with applications in environmental and health monitoring.

Investigations on Cylindrical Surrounding Double-Gate (CSDG) MOSFET using AlxGa1-xAs/InP: Pt with La2O3 oxide layer for fabrication.

The Cylindrical Surrounding Double-Gate MOSFET has been designed using Aluminium Gallium Arsenide in its arbitrary alloy form alongside Indium Phosphide with Lanthanum Dioxide as a high-ƙ dielectric material. The heterostructure based on the AlxGa1-xAs/InP: Pt has been used in the design and implementation of the MOSFET for RF applications. Platinum serves as the gate material, which has higher electronic immunity toward the Short Channel Effect and highlights semiconductor properties. The charge buildup is the main concern in the field of MOSFET design when two different materials are considered for fabrication. The usage of 2 Dimensional Electron Gas has been outstanding in recent years to help the electron buildup and charge carrier accumulation in the MOSFETs regime. Device simulation used for the smart integral systems is an electronic simulator that uses the physical robustness and the mathematical modeling of semiconductor heterostructures. In this research work, the fabrication method of Cylindrical Surrounding Double Gate MOSFET has been discussed and realized. The scaling down of the devices is essential to reduce the area of the chip and heat generation. By using these cylindrical structures, the area of contact with the circuit platform is reduced since the cylinder can be laid down horizontally. The coulomb scattering rate is observed to be 18.3 % lower than the drain terminal when compared to the source terminal. Also, at x = 0.125 nm, the rate is 23.9 %, which makes it the lowest along the length of the channel; at x = 1 nm, the rate is 1.4 % lesser than that of the drain terminal. A 1.4 A/mm2 high current density had been achieved in the channel of the device, which is significantly larger than comparable transistors. The conventional transistor occupies a larger area than the proposed cylindrical structures transistor and is also efficient in RF applications.

Results from Cryo-PoF: Power over fiber for fundamental and applied physics at cryogenic temperature

The Power over Fiber (PoF) technology delivers electrical power by sending laser light through an optical fiber to a photovoltaic power converter, in order to power sensors or electrical devices. This solution offers several advantages: removal of noise induced by power lines, robustness in a hostile environment, spark free operation when electric fields are present and no interference with electromagnetic fields.This technology is at the basis of the Cryo-PoF project: an R&D funded by the Italian Institute for Nuclear Research (INFN) in Milano-Bicocca (Italy). This project is inspired by the needs of the DUNE Vertical Drift detector, where the VUV light of liquid argon must be collected at the cathode, i.e. on a surface whose voltage exceeds 300 kV. We developed a cryogenic system, which is solely based on optoelectronic devices and a single laser input line, to power both the Photon Detection devices and its electronic amplifier. The Milano-Bicocca setup employ a commercial GaAs laser source with 2 W maximum power and a photovoltaic power converter with efficiency of ∼ 30% at liquid nitrogen temperature. The results obtained in Milano Bicocca will be presented with emphasis on performance and potential application in the field of applied physics.

AlGaAs as an Alternative Solar Water Splitting Material: Insights into Performance, Stability, and Future Directions.

This study offers an in-depth examination of aluminum gallium arsenide (AlGaAs) as a high-performance and durable material for photoelectrochemical water splitting, a key method of cost-effective renewable hydrogen production. Purpose-designed pin-AlGaAs photocathodes are demonstrated to yield a remarkable photocurrent density of over 15 mA/cm2 and an impressive onset potential of 1.11 V vs RHE. These results significantly outperform those achieved with other materials, marking a considerable advancement in the field. Moreover, this work addresses the long-standing issue of AlGaAs corrosion in an aqueous electrolyte. An innovative approach using a 60 nm TiO2 protection layer is introduced, providing substantial corrosion resistance in acidic environments and thereby enhancing material durability. This research also provides valuable insights into the role of passivation layers on charge transfer. It was found that an n-GaAs passivation layer further enhances the onset potential, whereas an n-InGaP layer contributes to a decline in the overall performance. These findings pave the way for new applications of AlGaAs in solar water splitting technology, offering a promising pathway toward the development of efficient AlGaAs/Si tandem water splitting devices.

Clinical Study of Photobiomodulation Effect at Postoperative Clefted Alveolar Ridge Bone Grafting.

This study aimed to evaluate photobiomodulation (PBM) adjunct effect on pain, swelling, and face temperature in individuals with oral cleft submitted to alveolar ridge bone grafting (ABG). The sample consisted of 46 patients with either incomplete or complete unilateral cleft lip and palate aged from 9 to 18 years, both sexes, who underwent ABG with chin donor area. Subjects were randomly divided into 3 groups: (1) Control (C): ABG (n=17); (2) PBM: ABG with PBM (n=14); (3) Simulated photobiomodulation (SPBM): ABG with SPBM (n=15). Aluminum Gallium Arsenide (GaAlAs) infrared laser was used at 808±10nm and power of 100mW±20%. GaAlAs infrared laser was applied on 14 points in the subject's face at 4J per point, at 2 times: Immediate postoperative period and 24 hours postoperative. The authors evaluated pain, swelling, and face temperature at 24 hours postoperative; at 7-day postoperative, the authors evaluated pain, medication use, and swelling decreasing perception. No statistically significant difference occurred between groups C, PBM, and SPBM. At 24 hours postoperative, pain values showed statistically significant difference (P=0.04) between group C and SPBM. PBM at the tested parameters did not reduce pain and swelling and did not significantly change face temperature of individuals submitted to ARBG.

Kerr-Lens Mode-Locked Yb:BaF2 Laser

We present sub-50 fs soliton pulse generation from a diode-pumped Kerr-lens mode-locked laser based on an Yb3+-doped BaF2 crystal. Utilizing a spatially single-mode, fiber-coupled InGaAs laser diode at 976 nm as a pump source, the Yb:BaF2 laser generates pulses as short as 46 fs at 1060.1 nm with an average output power of 45 mW at a pulse repetition rate of ~65.6 MHz via soft-aperture Kerr-lens mode locking. To the best of our knowledge, this represents the first demonstration of Kerr-lens mode-locked operation of the Yb:BaF2 crystal, as well as the shortest pulse duration ever achieved from any diode-pumped mode-locked laser based on an Yb3+-doped alkaline-earth fluoride crystal.

Laser Hemorrhoidoplasty Using Reusable Bare Fiber Combined Mucopexy on Grade IV Internal Hemorrhoid: A Case Report

Background: Hemorrhoids are the most common anorectal disease, affecting millions worldwide. Hemorrhoids are categorized as "internal" or "external" based on their proximity to the pectinate line, which separates the upper 2/3 and lower 1/3 of the anus. The hemorrhoidal disease can be treated in various ways, from non-invasive methods like rubber band ligation, cryotherapy, sclerotherapy, laser photocoagulation, and phototherapy to invasive methods like surgical excision for patients with severe symptoms, grade III or IV hemorrhoids, or persistent bleeding. This study described the results of Laser Hemorrhoidoplasty (LHP) using reusable bare fiber combined mucopexy, a diode laser with wavelengths of 980 nm and 1470 nm, specifically gallium aluminum arsenide (GaAIAs). Methods: a case of a 28-year-old male with complaints of rectal prolapse mass one day ago and could not be reinserted with a finger, bleeding while passing stool, and rectal pain with a Visual analog scale was 7. The patient had experienced similar symptoms and had a sclerobanding procedure four years ago. However, it has reappeared in the past year. The patient was diagnosed with grade 4 internal hemorrhoids and underwent Conclusion: Laser hemorrhoidoplasty using reusable bare fiber with combined mucopexy. After the laser hemorrhoidoplasty procedure on day 4, the patient felt no pain, rectal bleeding, rectal lumps, or soiling.

Effects of Photobiomodulation Therapy on the Expression of Hypoxic Inducible Factor, Vascular Endothelial Growth Factor, and Its Specific Receptor: A Randomized Control Trial in Patients with Diabetic Foot Ulcer.

Background: Impaired angiogenesis is a significant factor contributing to delayed healing in diabetic foot ulcers (DFUs) due to inadequate oxygenation. Objective: This study aimed to investigate the impact of photobiomodulation (PBM) using a Ga-As laser on the release of serum hypoxia-inducible factor 1-α (HIF-1α), vascular endothelial growth factor (VEGF), vascular endothelial growth factor receptor-2, and nitric oxide (NO) in diabetic patients with DFUs. Materials and methods: In this double-blind RCT, a total of 30 patients with grade II DFUs were enrolled. The patients were randomly divided into two groups: the PBM (n = 15) and the placebo (n = 15). In the PBM group, a Ga-As laser (904 nm, 2 J/cm2, 90 W) was given for 3 days/week for 4 weeks (11 sessions). In the placebo group, the power was turned off. Both groups received similar standard wound care. Before and after interventions, the levels of serum HIF-1α, VEGF, NO, and sVEGFR-2 were measured. In addition, the percentage decrease in the wound surface area (%DWSA) was measured. Results: Following the intervention, the results revealed that the PBM group had significantly lower levels of VEGF than the placebo group (p = 0.005). The %DWSA was significantly higher in the PBM group compared to the placebo group (p = 0.003). Moreover, VEGF showed a significant negative correlation with %DWSA (p < 0.001). Conclusions: The observed decrease in serum levels of VEGF and an increase in %DWSA, compared to the placebo group, suggests that PBM effectively improves angiogenesis. Furthermore, the significant correlation found between VEGF levels and %DWSA emphasizes the importance of evaluating wound surface in patients as a dependable indicator of enhanced wound angiogenesis. Clinical Trial Registration: NCT02452086.

Bias-Tunable Quantum Well Infrared Photodetector.

With the rapid advancement of Artificial Intelligence-driven object recognition, the development of cognitive tunable imaging sensors has become a critically important field. In this paper, we demonstrate an infrared (IR) sensor with spectral tunability controlled by the applied bias between the long-wave and mid-wave IR spectral regions. The sensor is a Quantum Well Infrared Photodetector (QWIP) containing asymmetrically doped double QWs where the external electric field alters the electron population in the wells and hence spectral responsivity. The design rules are obtained by calculating the electronic transition energies for symmetric and antisymmetric double-QW states using a Schrödinger-Poisson solver. The sensor is grown and characterized aiming detection in mid-wave (~5 µm) to long-wave IR (~8 µm) spectral ranges. The structure is grown using molecular beam epitaxy (MBE) and contains 25 periods of coupled double GaAs QWs and Al0.38Ga0.62As barriers. One of the QWs in the pair is modulation-doped to provide asymmetry in potential. The QWIPs are tested with blackbody radiation and FTIR down to 77 K. As a result, the ratio of the responsivities of the two bands at about 5.5 and 8 µm is controlled over an order of magnitude demonstrating tunability between MWIR and LWIR spectral regions. Separate experiments using parameterized image transformations of wideband LWIR imagery are performed to lay the framework for utilizing tunable QWIP sensors in object recognition applications.

Estimation enhancing in optoelectronic property: A novel approach using orbital interaction parameters and tight-binding

This paper advocates for an innovative approach designed for estimating optoelectronic properties of quantum structures utilizing Tight-Binding (TB) theory. Predicated on the comparative analysis between estimated and actual properties, the study strives to validate the efficacy of this proposed technique; focusing notably on the computation of bandgap energy. It is observed that preceding methodologies offered a restricted accuracy when predicting complex structures like super-lattices and quantum wells. To address this gap, we propose a methodology involving three distinct phases using orbital interaction parameters (OIPs) and the TB theory. The research employed Aluminium Arsenide (AlAs) and Gallium Arsenide (GaAs) as the primary bulk materials. Our novel approach introduces a computation framework that first focuses on bulk computation, subsequently expanding to super-lattice structures. The findings of this research demonstrate promising results regarding the accuracy of predicated optoelectronic properties, particularly the cut-off wavelength. This study paves the way for future research, potentially enhancing the precision of the proposed methodology and its application scope within the field of quantum optoelectronics.

Nonlinear spin-orbit coupling in optical thin films

Tunable generation of vortex beams holds relevance in various fields, including communications and sensing. In this paper, we demonstrate the feasibility of nonlinear spin-orbit interactions in thin films of materials with second-order nonlinear susceptibility. Remarkably, the nonlinear tensor can mix the longitudinal and transverse components of the pump field. We observe experimentally our theoretical predictions in the process of second-harmonic generation from a thin film of aluminum gallium arsenide, a material platform widely spread for its role in the advancement of active, nonlinear, and quantum photonic devices. In particular, we prove that a nonlinear thin film can be used to produce vector vortex beams of second-harmonic light when excited by circularly-polarized Gaussian beams.

SESAM mode-locked Yb:GdScO3 laser.

We report on the investigation of continuous-wave (CW) and SEmiconductor Saturable Absorber Mirror (SESAM) mode-locked operation of a Yb:GdScO3 laser. Using a single-transverse-mode, fiber-coupled InGaAs laser diode at 976 nm as a pump source, the Yb:GdScO3 laser delivers 343 mW output power at 1062 nm in the CW regime, which corresponds to a slope efficiency of 52%. Continuous tuning is possible across a wavelength range of 84 nm (1027-1111 nm). Using a commercial SESAM to initiate mode-locking and stabilize soliton-type pulse shaping, the Yb:GdScO3 laser produces pulses as short as 42 fs at 1065.9 nm, with an average output power of 40 mW at 66.89 MHz. To the best of our knowledge, this is the first demonstration of passively mode-locking with Yb:GdScO3 crystal.

Investigation of structural, mechanical, electronic and optical responses of Ga doped aluminum arsenide for optoelectronic applications: By first principles

Owing to the rapidly increasing performance of ternary semiconductors; Aluminium Gallium Arsenide (Al1-xGaxAs; x = 0, 0.25, 0.50, 0.75) has been studied by first-principles calculations in Cambridge Serial Total Energy Package (CASTEP-Code). Density functional theory in the frame of full potential linear augmented plane wave (FP-LAPW) is used. The structural, electronic, and optical behavior of the Zinc Blend (ZB) structure of AlAs with Ga impurity was computed by using generalized gradient approximation (GGA) as exchange potential and Perdew-Burke-Ernzerhof (PBE) as functional. Changes in lattice parameters (a), bulk modulus (66.07–76.85), hardness (5.79–8.91) and machinability (1.36–1.46), band gap energy (Eg), and optical properties are computed and discussed in this work. Lattice parameters and elastic constants showed excellent agreement with the reported data whereas some properties were found to excel much more than the theoretical reports. Remarkable bandgap reduction from 1.7eV to 0.28eV is very encouraging in its low-energy applications in UV and visible ranges. Real (Re) and Imaginary (Img) parts of the dielectric function and refractive index shifts towards lower energy values show good agreement with those of theoretical and experimental works. We contribute to the knowledge and characterization of Al1-xGaxAs facilitating its integration into various technological advancements such as photovoltaic, laser, diodes, and high-frequency transistors.

RESEARCH OF INFLUENCE OF MOLAR COMPOSITION ON ELECTRON MOBILITY IN ALUMINUM-GALLIUM ARSENIDE

Improvement in the technology of growing multicomponent semiconductors and the study of their potential applications contribute to the development of semiconductor devices with improved characteristics. Aluminum gallium arsenide is a promising three-component semiconductor in terms of crystal lattice matching, which caused a comprehensive study of the material in order to create high-performance electronic and optoelectronic devices on its basis. Predicting the prospects for creating devices based on certain materials requires a thorough knowledge, first of all, of their electrical properties.It should be noted that the possibilities of modeling the mobility of electrons in aluminum-gallium arsenide are not sufficiently disclosed in the scientific and technical literature. The aim of this work is to simulate the dependence of the electron mobility of the AlxGa1-xAs solid solution on the molar composition x.The simulation was carried out by the method of relaxation equations; based on the three-valley model of the conduction band. A technique is presented and a numerical experiment is carried out to determine the dependence of the mobility of charge carriers on the molar composition x of the solid solution. Attention is drawn to the peculiarity of modeling the processes of intervalley nonequivalent scattering, which corresponds to a significant convergence ofenergy valleys to each other. A model dependence of the Hall electron mobility in AlxGa1-xAs is obtained in the full range of molar composition values and compared with experimental results. Additional simulation results are presented that contribute to the understanding of the processes leading to the appearance of a specific feature of the dependence of the electron mobility on the molar composition of AlxGa1-xAs.A set of initial modeling parameters is determined, which provides good agreement with the experimental results considered in the work. The obtained results of numerical simulation open up opportunities for additional studies of the properties of aluminum-gallium arsenide. A technique for modeling the dependence of charge carrier mobility on the molar composition for three-component solid solutions is proposed.

Continuous entanglement distribution from an AlGaAs-on-insulator microcomb for quantum communications

Using an aluminum gallium arsenide microring resonator, we demonstrate a bright quantum optical microcomb with &gt;300 nm (&gt;40 THz) bandwidth and more than 20 sets of time–energy entangled modes, enabling spectral demultiplexing with simple, off-the-shelf commercial telecom components. We report high-rate continuous entanglement distribution for two sets of entangled-photon pair frequency modes exhibiting up to 20 GHz/mW2 pair generation rate. As an illustrative example of entanglement distribution, we perform a continuous-wave time-bin quantum key distribution protocol with 8 kbps sifted key rates while maintaining less than 10% error rate and sufficient two-photon visibility to ensure security of the channel. When the &gt;20 frequency modes are multiplexed, we estimate &gt;100 kbps entanglement-based key rates or the creation of a multi-user quantum communications network. The entire system requires less than 110 µW of on-chip optical power, demonstrating an efficient source of entangled frequency modes for quantum communications. As a proof of principle, a quantum key is distributed across 12 km of deployed fiber on the University of California Santa Barbara (UCSB) campus and used to encrypt a 21 kB image with &lt;9% error.

Post-Mastectomy Shoulder Pain and Lymphedema Responses to Ga-As Laser Versus Microcurrent Electrical Stimulation

Objective: to evaluate the efficacy of GA-AS laser against microcurrent electrical stimulation on postmastectomy shoulder pain as well as lymphedema. Method: a double blinded randomized controlled study. sixty breast cancer patients with lymph-edema stage I and II ,40-55 years old were assigned randomly into study -group A, n = 20 or study -group B, (n = 20) in addition to control group C, (n = 20). The study group was given 20 minutes GA-AS laser, 90 minutes complete decongestive therapy (CDT). study -group B received 20 minutes of microcurrent electrical stimulation (MENS) and 90minutes CDT, control group C was given 90 minutes CDT. All treatment interventions were applied at a frequency of three sessions per week for 12 weeks. Arm volume calculated by circumference measurement, Shoulder and Hand (DASH) questionnaire as well as pain intensity utilizing a visual analogue scale (VAS) were measured at before and following 12 weeks of treatment. Results: a statistically significant difference has been detected in limb volume, DASH questionnaire as well as VAS favoring the study group A ((p = 0.001).) and the study group B ((p = 0.001). following 12 weeks of intervention. The mean (SD) for limb-volume, DASH questionnaire as well as pain score were 1236.74 ± 43.34, 27.21 ± 7.16, and 3.20 ± 0.62in the study group A, and 1331.76 ± 46.92, 34.52 ± 4.38 and 3.90 ± 0.78in the study group B and 1390.18 ± 58.77 ml, 40.68 ± 6.93and 5.30 ± 0.86in the control group C respectively. Conclusion: adding GA-AS laser and microcurrent electrical stimulation to the conventional physical therapy program had a valuable effect than traditional physical therapy program alone in improving postmastectomy shoulder pain as well as lymphedema.

Self-consistent Analysis for Optimization of AlGaAs/GaAs Based Heterostructure

The heterostructures are suitable for developing high-performance electronic and optoelectronic devices. In this work, a significant interest in the design and analysis of compound semiconductor Aluminium Gallium Arsenide (AlGaAs) and Gallium Arsenide (GaAs) heterostructures has been realized. These structures are fabricated with alternating layers of GaAs (a direct bandgap material) and AlGaAs (an indirect bandgap material) and have been used to design a range of high-performance devices, including lasers, solar cells, and field-effect transistors. A 30 nm AlGaAs consisting of a middle layer between two GaAs layers with a GaAs substrate has been reported. This work has been carried out at 300 K utilizing a quantum transport and self-consistent method for the proposed AlGaAs/GaAs one-dimensional heterostructure with a gate length of 2 nm and a voltage varying from 0 to 0.1 V. The measured values of doping density (nd) and electron density (ne) of AlGaAs/GaAs one-dimensional heterostructure are 8.96 × 1011 cm−3 and 2 × 1026 cm−3, respectively. The system response to geometric changes in several parameters has been realized. Hence, confined restricted states were computed using wave functions and energies. The GaAs layer on top of quantum well heterostructure interfaces has been used to modulate the wave functions (eigenstates) resulting in pseudo-one dimensional or small-dimension eigenstates. In this work, a comprehensive analysis of 1D AlGaAs/GaAs heterostructure through benchmarking with several homo-structures (various thicknesses) has been performed.

The effect of bone remodeling with photobiomodulation in dentistry: a review study.

Photobiomodulation (PBM) has been emerging as a promising alternative therapy in dentistry. However, various parameters of PBM are used in different studies, and there is limited cumulative data on PBM for improving bone formation in clinical trials. The aim of this review was to evaluate the effectiveness of PBM in the process of bone remodeling in dentistry using randomized controlled trials. Initially, a total of 1,011 articles published from January 2008 to December 2021 were retrieved from five electronic databases (PubMed, Scopus, Cochrane Library, EMBASE, and CINAHL). After a two-step review, nine articles met the inclusion criteria. The parameter of PBM, group, treatment sessions, assessment times and outcomes of the included studies were reviewed. Eighty-nine percent of the studies revealed positive effects on bone formation between the laser group and the control group. Only one article reported that light-emitting diode did not significantly enhance osteogenesis. Additionally, the present study shows that Gallium aluminum arsenide of near infrared (NIR) laser with continuous mode is the most commonly used form of PBM. The biostimulatory effects are dependent on several parameters, with wavelength and dose being more important than others. Based on this review, it is suggested that the NIR range and an appropriate dose of PBM could be used to increase the efficiency of stimulating bone healing and remodeling. However, standardization of treatment protocols is needed to clarify therapeutic strategies in dentistry.