Forward Voltage Research Articles

Influence of annealing treatment on performance of 4H–SiC SBD irradiated by heavy ions under room temperature and low temperature

The influence of the annealing treatment on the performance of commercial 4H–SiC Schottky barrier diodes (SBDs) subjected to heavy ion irradiation under room temperature (RT) and low temperature (LT) are presented. Experimental results confirm that annealing treatment effectively eliminates defects and interface states caused by heavy ion irradiation, particularly for 4H–SiC SBD under LT irradiation. Increasing the annealing temperature leads to the slight improvement in forward current, leakage current and breakdown voltage. However, the annealing process may result in the formation of Ti and Si compounds at the interface between the Schottky metal and SiC, as well as a significant number of vacancies. Combined with Technology Computer Aided Design (TCAD) simulations, it is concluded that the interface trap charge concentrations exceeding 1 × 1012 cm−2 significantly impact the breakdown characteristics of 4H–SiC SBDs.

Selective Capacitive Recovery of Rare-Earth Ions from Wastewater over Phosphorus-Modified TiO2 Cathodes via an Electro-Adsorption Process.

Large amounts of wastewater containing low-concentration (<10 ppm) rare-earth ions (REIs) are discharged annually in China's rare-earth mining and processing industry, resulting in severe environmental pollution and economic losses. Hence, achieving efficient selective recovery of low-concentration REIs from REIs-containing wastewater is essential for environmental protection and resource recovery. In this study, a pseudocapacitance system was designed for highly efficient capacitive selective recovery of REIs from wastewater using the titanium dioxide/P/C (TiO2/P/C) composite electrode, which exhibited over 99% recovery efficiency for REIs, such as Eu3+, Dy3+, Tb3+, and Lu3+ in mixed solution. This system maintained high efficiency and more than 90 times the enrichment concentration of REIs even after 100 cycles. Ti4+ of TiO2 was reduced to Ti3+ of Ti3O5 under forward voltage in the system, which trapped the electrons of phosphorus site and caused it to be oxidized to phosphate with a strong affinity for REIs, thus improving the selectivity of REIs. Under reverse voltage, Ti3O5 was oxidized to TiO2, which transferred electrons to phosphate and transformed to the phosphorus site, resulting in the desorption and enrichment of REIs and the regeneration of the electrode. This study provides a promising method for the efficient recovery of REIs from wastewater.

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

V-defects are morphological defects that typically form on threading dislocations during epitaxial growth of (0001)-oriented GaN layers. A V-defect is a hexagonal pyramid-shaped depression with six {101¯1}-oriented sidewalls. These semipolar sidewalls have a lower polarization barrier than the polarization barriers present between the polar c-plane quantum wells and quantum barriers and can laterally inject carriers directly into quantum wells in GaN-based light emitting diodes (LEDs). This is especially important, as the high polarization field in c-plane GaN is a significant factor in the high forward voltage of GaN LEDs. The optimal V-defect density for efficient lateral carrier injection in a GaN LED (∼109 cm−2) is typically an order of magnitude higher than the threading dislocation density of GaN grown on patterned sapphire substrates (∼108 cm−2). Pure-edge dislocation loops have been known to exist in GaN, and their formation into large V-defects via low-temperature growth with high Si-doping has recently been studied. Here, we develop a method for pure-edge threading dislocation half-loop formation and density control via disilane flow, growth temperature, and thickness of the half-loop generation layer. We also develop a method of forming the threading dislocation half-loops into V-defects of comparable size to those originating from substrate threading dislocations.

Low-carbon oriented planning of shared photovoltaics and energy storage systems in distribution networks via carbon emission flow tracing

With the targets of carbon peaking and carbon neutrality, carbon emission reduction measures have become significant issues in new-type power systems. Distribution networks (DNs), which multiple power sources and flexible loads access to, play an essential role in exploiting the potential of reducing carbon emissions on the demand side. To achieve a global carbon emission reduction considering the carbon quota of each customer, shared photovoltaics (PVs) and energy storage systems (ESSs) are allocated with a centralized calculation and optimization conducted by DNs. To solve two key points in demand-side planning of shared PVs and ESSs in distribution networks, i.e., the accuracy of carbon emission flow (CEF) calculation and carbon quota-oriented optimization planning, this paper proposes a low-carbon oriented planning method for shared PVs and ESSs via CEF tracing. Firstly, a novel CEF calculation method is proposed based on the forward current sweep and backward voltage sweep algorithm, which considers the tracing of reactive power and power losses. Next, carbon emission index and economic index of allocating shared PVs and ESSs are defined. Subsequently, a bi-level optimization model is presented, considering the excess carbon emissions of each load based on carbon accounting and carbon quotas. Finally, the superiority of the proposed method is verified through a modified IEEE 33-node distribution network, and the effects of various investment constraints and carbon quotas are discussed.

A fast-switching low-loss field-stop IGBT with dual control gate of SIPOS material

A fast-switching low-loss field-stop insulated gate bipolar transistor with a dual control gate (DIGBT) of a semi-insulating polycrytalline silicon (SIPOS) material is proposed in this paper. Because the SIPOS has uniform high resistance, it has an approximate linear electric potential distribution. When DIGBT conducts, the higher electric potential on SIPOS causes the P-type drift region (P-drift) to generate an inversion layer of electrons, adjusting the number of carriers and making the generation of non-equilibrium carriers no longer dependent on the doping concentration in P-drift (Nd) but on the electric potential distribution on SIPOS. Therefore, it can solve the contradiction among the breakdown voltage, forward voltage drop [VCE(sat)], turn-off time (toff), and turn-off loss (Eoff) caused by the Nd. Through Technology Computer Aided Design (TCAD) simulation, the VCE(sat) of DIGBT is 30.6% lower than that of SJFS IGBT. Meanwhile, DIGBT reduces the toff by 62.8% while reducing the Eoff by 83.0% compared to SJFS IGBT. In addition, the static latch-up I–V and the forward biased safe operating area of the DIGBT have been significantly improved. This paper adjusts the number of carriers through the characteristics of SIPOS material, enabling the above-mentioned physical phenomena to be applied in insulated gate bipolar transistor power devices and achieving device performance breakthroughs.

Hysteresis between gas breakdown and plasma discharge

In direct-current (DC) discharge, it is well known that hysteresis is observed between the Townsend (gas breakdown) and glow regimes. Forward and backward voltage sweep is performed using a one-dimensional particle-in-cell Monte Carlo collision (PIC-MCC) model considering a ballast resistor. When increasing the applied voltage after reaching the breakdown voltage (Vb), transition from Townsend to glow discharges is observed. When decreasing the applied voltage from the glow regime, the discharge voltage (Vd) between the anode–cathode gap can be smaller than the breakdown voltage, resulting in a hysteresis, which is consistent with experimental observations. Next, the PIC-MCC model is used to investigate the self-sustaining voltage (Vs) in the presence of finite initial plasma densities between the anode and cathode gap. It is observed that the self-sustaining voltage coincides with the discharge voltage obtained from the backward voltage sweep. In addition, the self-sustaining voltage decreases with increased initial plasma density and saturates above a certain initial plasma density, which indicates a change in plasma resistivity. The decrease in self-sustaining voltage is associated with the electron heat loss at the anode for the low pd (rarefied) regime. In the high pd (collisional) regime, the ion energy loss toward the cathode due to the cathode fall and the inelastic collision loss of electrons in the bulk discharge balance out. Finally, it is demonstrated that the self-sustaining voltage collapses to a singular value, despite the presence of a initial plasma, for microgaps when field emission is dominant, which is also consistent with experimental observations.

The Temperature Dependence of the Parameters of LED Light Source Control Devices Powered by Pulsed Voltage

Ambient temperature has a significant effect on the electrical and luminous parameters of light-emitting diodes (LEDs), which include forward and reverse current, forward voltage, and luminous flux. This paper gives insight into the influence of ambient temperature on the electrical and luminous parameters of LEDs powered by a rectangular pulsed voltage source versus those powered by a constant voltage source. The characteristics of LEDs in LED lighting devices were studied to determine their optimal operating conditions. To this end, rectangular pulse voltages with different pulse filling factors D were considered against the DC voltage source. Characteristics were obtained for the current stabilization mode and for the LED voltage stabilization mode. In both modes, the temperature dependence of the luminous flux, current, voltage, power consumption, and luminous efficiency of the LEDs was studied in the 20 °C to 60 °C range. The optimal LED operating conditions were determined, of which their luminous flux and luminous efficiency are least dependent on ambient temperature. When powered by a rectangular pulse voltage, the LED device drivers’ optimal pulse filling factor and operating frequency were determined.

The optical properties of ZnO/ZnS:Mn core–shell nanorods prepared on GaN substrates

ZnO/ZnS:Mn/GaN core–shell nanorods device was obtained by depositing ZnO/ZnS:Mn core–shell nanorods on GaN substrate using pulsed laser deposition and hydrothermal method. The optical properties of the device were studied. The PL spectrum of ZnO/ZnS:Mn/GaN consists of four emission bands located at 375, 450, 530 and 590 nm. The forward opening voltage is about 6 V. Under forward bias, there are two luminescence bands located at 415 and 610 nm, and the intensity increases with the increase of forward voltage. The color coordinates of EL spectra are very close to standard white light, indicating that the device has potential application in white light LED. Compared to ZnO/GaN nanorods device, the white light quality of ZnO/ZnS:Mn/GaN core–shell nanorods device is better, and it is more suitable as a long-term light source.

Bidirectional UV/violet heterojunction light-emitting diode with In0.27Al0.73N alloy film as electron transport layer

In this paper, the p-GaN/n-In0.27Al0.73N heterojunction light-emitting diode (LED) was fabricated by radio frequency magnetron sputtering (RF-MS) and the electroluminescence (EL) characteristics of the p-GaN/n-In0.27Al0.73N heterojunction diode was investigated. Based on the preparation of the InXAl1-XN thin films at different substrate temperatures (Ts), the crystal structure, optical and electrical properties were investigated by XRD, SEM and other material characterization techniques. With increasing Ts, the grain size and surface morphology of the InXAl1-XN thin films change dramatically. The film has the best optical and electrical properties when the Ts is 300℃. On the basis of this, the compositional content of indium in the InXAl1-XN film was calculated to be 0.27. The heterojunction LED was fabricated on a commercial p-GaN substrate and the In0.27Al0.73N alloy film. The EL was successfully achieved at various forward and reverse voltages at room temperature and the temperature-dependent EL has been investigated. Furthermore, research is being conducted on the characteristics of the interface of p-GaN/n-In0.27Al0.73N heterojunction and the elucidation of the light-emitting mechanism of diode. The present work uses a simple and low-cost RF-MS method to fabricate UV/Violet bidirectional drive p-GaN/n-In0.27Al0.73N heterojunction LED, which provides a new reference for the fabrication of LED using InXAl1-XN alloy material.

Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact

Power Schottky barrier diodes (SBDs) face an inherent trade-off between forward conduction loss and reverse blocking capability. This limitation becomes more severe for ultra-wide bandgap (UWBG) SBDs due to the large junction field. A high Schottky barrier is usually required to suppress the reverse leakage current at the price of an increased forward voltage drop (VF). This work demonstrates a Ga2O3 junction barrier Schottky (JBS) diode that employs the embedded p-type NiO grids to move the peak electric field away from the Schottky junction, thereby allowing for the use of an ultra-low barrier TiN Schottky contact. This JBS diode concurrently realizes a low VF of 0.91 V (at forward current of 100 A/cm2) and a high breakdown voltage over 1 kV, with the VF being the lowest in all the reported vertical UWBG power diodes. Based on the device characteristics measured up to 200 °C, we further analyze the power loss of this JBS diode across a wide range of operational duty cycles and temperatures, which is found to outperform the TiN/Ga2O3 SBDs or NiO/Ga2O3 PN diodes. These findings underscore the potential of low-barrier UWBG JBS diodes for high-frequency, high-temperature power electronics applications.

A voltage-driven dual-mode MoSe2 photodetector with graphene as van der Waals contact

Two-dimensional (2D) molybdenum selenide (MoSe2) is promising for use in the development of photodetectors for the harvesting of light from the ultraviolet to the near-infrared band, while high responsivity and fast response speed are difficult to simultaneously realize. Herein, we present a dual-mode MoSe2 photodetector with asymmetric electrodes, in which graphene and Cr metal are utilized as ohmic and Schottky contacts, respectively. The photodiode possesses fabulous Schottky characteristics, with a rectification ratio of ∼250 and a low dark current of ∼40 pA at −1 V. Under forward bias voltage of 1 V, the photodetector works in photoconductive mode with a slow response speed (decay time: ∼5 min) but high responsivity (632 mA W−1). However, at reverse bias voltage, the photodetector acts as a photovoltaic-type device due to the Schottky barrier between Cr and MoSe2. Because of the reinforced built-in electric field, the photodetector driven at −5 V shows much faster response speeds (rise time: 1.96 ms; decay time: 755 µs). This study provides a deep understanding of asymmetric structure MoSe2 photodetectors operated in two modes, which promotes a forward step toward 2D material optoelectronics.

Operation up to 225°C of NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 Heterojunction Lateral Rectifiers

The characteristics of NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 heterojunction lateral geometry rectifiers with the epitaxial layers grown by Metal Organic Chemical Vapor Deposition were measured over the temperature range from 25-225°C. The forward current increased with temperature, while the on-state resistance decreased from 360 Ω•cm2 at 25°C to 30 Ω.cm2 at 225°C. The forward turn-on voltage was reduced from 4 V at 25°C to 1.9 V at 225°C. The reverse breakdown voltage at room temperature was ~4.2 kV, with a temperature coefficient of -16.5 V/K. This negative temperature coefficient precludes avalanche being the breakdown mechanism and indicates that defects still dominate the reverse conduction characteristics. The corresponding power figures-of-merit were 0.27-0.49 MW.cm-2. The maximum on/off ratios improved with temperature from 2105 at 25°C to 3107 at 225°C when switching from 5 V forward to 0 V. The high temperature performance of the NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 lateral rectifiers is promising if the current rate of optimization continues.

Hysteresis loops on voltage-current characteristics and optical responses of PEDOT:PSS/ZnO nanorods/ZnO:Ga heterostructure

Volage (V)-current (I) curves of the poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)/ZnO nanorods (NRs)/ZnO:Ga (GZO) heterostructure exhibited a rectification behavior with hysteresis loops both in forward voltage (VF) and reverse voltage (VR) regions. The ultraviolet (UV) light irradiation of 360 nm led to the increase in the reverse current (IR), i.e. generation of photocurrent (PC), and the decrease in the hysteresis loop area in the VF region. In dark, the 1/V vs. ln (I/V2) plot revealed that the dominant carrier transport mechanisms in the low- and the high-VF regions are the direct tunneling and the Fowler-Nordheim (F-N) tunneling through the dipole layer formed at the interface between the PEDOT:PSS and ZnO NRs layers, respectively. On the contrary, the carrier transport in the middle-VF region in dark was dominated by the bulk-limited mechanisms, such as the space-charge-limited (SCL) conduction controlled by the single shallow traps, the trap-free SCL conduction, and the trap-filled-limit conduction controlled by the traps with Gaussian distribution. The UV light irradiation changed the carrier transport mechanism in the middle-VF region to the trap-free SCL conduction. The resistive switching related to the hysteresis loop was found to be caused by the trapping and detrapping of the injected carriers at the traps. In dark, the maximum forward current was increased by the repetition of the VF sweep of 0 V → 5 V → 0 V, but decreased by the repetition of the VR sweep of 0 V → -5V → 0 V, indicating the possibility of the resistive memory. At the low VRs, PC spectra showed a main peak at 350 nm, which is corresponding to slightly higher photon energy than the bandgap energy of ZnO. Moreover, the existence of the tail extending into the bandgap was also observed on the PC spectra. From the time response of PC, the depth of the trap state was estimated to be 0.64–0.77 eV.

Vertical Schottky diode on (113) oriented homoepitaxial diamond

Vertical Schottky diodes were fabricated on (113) oriented diamond substrates produced from thick heavily boron doped (NA ∼ 3.5 × 1020 cm−3) diamond layers grown on HPHT-grown synthetic Ib diamond crystals. The p+-substrates were overgrown by a low doped p-epilayer whose surface layer was compensated up to the depth of 0.1 to 0.3 μm. The surface was then oxygen terminated and covered by evaporated Mo/Au Schottky contacts. The bottom ohmic contact to p+-substrate was formed by Ti/Au bi-layer. Current- and capacitance-voltage characteristics of the realized diodes were measured at temperatures ranging from 25 to 180 °C. At room temperature, the realized diodes show high forward current densities JF = 100 A/cm2 and low differential ON-state specific resistance Ron_sp = 3.7 mΩ.cm2 at forward voltage VF = 4 V and a very low leakage (JR < 10−9 A/cm2) in the blocking regime. At 180 °C, forward characteristics significantly improve (JF = 5 kA/cm2, Ron_sp = 0.2 mΩ.cm2 at VF = 4 V) while the blocking characteristics remain almost unchanged (JR = 6 × 10−8 A/cm2 at VR = 4 V). The breakdown electric field is about 3 MV/cm and the rectification ratio keeps at the level of 1011. Characteristics of realized diodes, which are fully comparable to those of Schottky-pn diodes prepared on (111) oriented boron doped diamond, confirm the suitability of (113) orientation for realization of vertical diamond power devices.

Enhancing the performance of AlGaN-based DUV-LEDs with multifocal laser stealth dicing

In this study, AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) processed via standard laser dicing (SLD) and multifocal laser stealth dicing (MFLSD) were investigated. Adopting the MFLSD technology would generate a roughing surface rather than the V-shaped grooves on the sidewall of 508 × 508 µm2 DUV-LEDs, which would reduce the forward operating voltage and increase the wall-plug efficiency, light output power, and far-field radiation patterns of these devices. In addition, the wavelength shift, far-field patterns, and light-tracing simulation results of the DUV-LEDs processed with SLD and MFLSD were clearly demonstrated and analyzed. Accordingly, it was observed that the MFLSD process provided more possibilities for photon escape to increase the light extraction efficiency (LEE) of DUV-LEDs, thus decreased the wavelength-redshift and junction temperature in DUV-LEDs. These results provide a reference for advanced nano-processing practices implemented during the fabrication of semiconductor devices.

A gyrator-C active inductor based tunable low noise amplifier for sub-GHz frequency range

The propose exhibits a tunable low noise amplifier (LNA), which provides the tunability at sub-GHz frequency range and hence can become choicest frequency range for 5 G applications. Common source (CS) with source degeneration inductor LNA is proposed; in which the inductor in source branch is replaced by gyrator-c active inductor which not only reduced the overall area of the circuit but can also be used to provide the feature of tunability by changing the bias voltage of CMOS based active resistor in feedback branch. Therefore, instead of having a LNA circuit for the fixed frequency, a single tunable LNA design can be used over a range of frequency from 1 GHz to 5 GHz. The proposed approach will provide the direct tuning to the circuit. The forward voltage gain achieved is greater than 10 dB, input matching parameter is less than −10 dB and the output matching parameter is less than −10 dB. The average power dissipated is 0.02 W. The results can be tuned by controlling the feedback voltage of tunable active inductor (Tunable_AI). The tunable results can be achieved up to the bandwidth of 1 GHz.

Influence of electrical field on the susceptibility of gallium nitride transistors to proton irradiation

Radiation susceptibility of electronic devices is commonly studied as a function of radiation energetics and device physics. Often overlooked is the presence or magnitude of the electrical field, which we hypothesize to play an influential role in low energy radiation. Accordingly, we present a comprehensive study of low-energy proton irradiation on gallium nitride high electron mobility transistors (HEMTs), turning the transistor ON or OFF during irradiation. Commercially available GaN HEMTs were exposed to 300 keV proton irradiation at fluences varying from 3.76 × 1012 to 3.76 × 1014 cm2, and the electrical performance was evaluated in terms of forward saturation current, transconductance, and threshold voltage. The results demonstrate that the presence of an electrical field makes it more susceptible to proton irradiation. The decrease of 12.4% in forward saturation and 19% in transconductance at the lowest fluence in ON mode suggests that both carrier density and mobility are reduced after irradiation. Additionally, a positive shift in threshold voltage (0.32 V and 0.09 V in ON and OFF mode, respectively) indicates the generation of acceptor-like traps due to proton bombardment. high-resolution transmission electron microscopy and energy dispersive x-ray spectroscopy analysis reveal significant defects introduction and atom intermixing near AlGaN/GaN interfaces and within the GaN layer after the highest irradiation dose employed in this study. According to in-situ Raman spectroscopy, defects caused by irradiation can lead to a rise in self-heating and a considerable increase in (∼750 times) thermoelastic stress in the GaN layer during device operation. The findings indicate device engineering or electrical biasing protocol must be employed to compensate for radiation-induced defects formed during proton irradiation to improve device durability and reliability.

Wafer-Scale Characterization of 1692-Pixel-Per-Inch Blue Micro-LED Arrays with an Optimized ITO Layer.

Wafer-scale blue micro-light-emitting diode (micro-LED) arrays were fabricated with a pixel size of 12 μm, a pixel pitch of 15 μm, and a pixel density of 1692 pixels per inch, achieved by optimizing the properties of e-beam-deposited and sputter-deposited indium tin oxide (ITO). Although the sputter-deposited ITO (S-ITO) films exhibited a densely packed morphology and lower resistivity compared to the e-beam-deposited ITO (E-ITO) films, the forward voltage (VF) values of a micro-LED with the S-ITO films were higher than those with the E-ITO films. The VF values for a single pixel and for four pixels with E-ITO films were 2.82 V and 2.83 V, respectively, while the corresponding values for S-ITO films were 3.50 V and 3.52 V. This was attributed to ion bombardment damage and nitrogen vacancies in the p-GaN layer. Surprisingly, the VF variations of a single pixel and of four pixels with the optimized E-ITO spreading layer from five different regions were only 0.09 V and 0.10 V, respectively. This extremely uniform VF variation is suitable for creating micro-LED displays to be used in AR and VR applications, circumventing the bottleneck in the development of long-lifespan and high-brightness organic LED devices for industrial mass production.

A Characteristic Curve Remote Laboratory for School and University

Remote laboratories play a pivotal role in facilitating teaching and learning experiences, offering unique opportunities beyond traditional classroom settings. The project OnLabEdu (Online Laboratories for School Education) aims the development of remote laboratories for both, schools and university-level students, complete with the development of appropriate accompanying educational resources. This paper introduces a characteristic curve remote laboratory with a first-developed learning arrangement on RGB LEDs and the interplay of energy, forward voltage, and wavelength of light. Drawing from the model of educational reconstruction, the learning arrangement is based on a profound clarification of the scientific content and considering students’ perspectives. Against the background of a design-based research approach, the learning arrangement was already evaluated with high school students through probing acceptance interviews. Now we are interested if the learning arrangement also fits to tertiary level students. Therefore, we conducted six probing acceptance interviews with pre-service teacher students, hailing from physics (n=3) and non-physics (n=3) backgrounds. The primary objective of the evaluation was to identify potential barriers to learning and elements that promote a stimulating learning environment along with the operation of the remote laboratory for the tertiary level. The findings revealed similar challenges of tertiary-level students and high school students. We detected students’ challenges with technical terminology as well as explaining the term forward voltage and its connection to the concept of energy. These results give initial ideas for a re-design of the learning arrangement to address the identified issues and make the learning arrangement suitable for tertiary level students.

Electrical, structural and photovoltaic properties of acceptor dye modified Au/n-Ge heterostructure

n-Ge heterostructure is fabricated using organic dye interlayers such as sulforhodamine-G (SRG) using low-cost spin coating technique and explored its electrical and structural features. The I–V measurements of the Au/SRG/n-Ge heterostructure (HJ) show good rectification behavior. It has been noticed that the barrier height (0.73 eV) of the Au/SRG/n-Ge heterojunction was significantly higher than the Au/n-Ge Schottky diode (SD) (0.63 eV). Cheung's function and the Norde method has been utilized to evaluate the various barrier parameters to understand the non-ideal behavior of the contacts at higher bias region. The low value of the series resistance for HJ (53 Ω) is observed than compared to the SD without organic dye (2974 Ω). Barrier parameters evaluated from the Norde method were compared with those from the Cheung method and found that they confirmed the consistency of Schottky barrier parameters obtained from both techniques. The transport properties of the HJ and SD in the forward bias region are evaluated using the log (I) vs. log (V) plot. At larger forward bias voltages, a change in the drift of current conduction is observed from Ohmic current conduction to traps-assisted SCLC conduction. This may be ascribed to the presence of defects or traps at the n-Ge and SRG interface possibly associated with the organic dye. Also, the photovoltaic properties of the SRG/n-Ge heterostructures were evaluated at 100 mW/cm2 showing significant photoresponse indicates the usage of SRG dyes in photosensitive applications.