Field Of Topological Materials Research Articles

Phononic Weyl nodal lines and Weyl pairs in van der Waals heavy fermion material CeSiI

Abstract Topological phonon is a new frontier in the field of topological materials. Different from electronic structures, phonons are bosons and most topological phonons are metallic form. Previous studies about topological phonon states were focused on threedimensional (3D) materials. Owing to the lack of material candidates, two-dimensional (2D) and van der Waals f-electron-related topological phonons were rarely reported. Based on first-principles calculations, we investigated the topological phononic state in the heavy fermion material CeSiI with a layered structure. Both three-dimensional (3D) bulk and two-dimensional (2D) monolayers have topological nontrivial states in the rarely seen f-electron dominated van der Waals metal. Owing to the PT and C 3z symmetries, Weyl nodal lines with non-zero Chern numbers exist on the hinge of the Brillouin zone (BZ). Protected by C 3z rotation symmetry, three pairs of Weyl points with ±π Berry phase exist at point K near the Frequency of 8 and 10 THz. In addition to the bulk topological charges, corresponding surface/edge states were also systematically analyzed, which gives a consistent understanding. Our results proposed another interesting point in the newly discovered rear earth heavy fermion material CeSiI and are helpful for future experimental study of its topological phonons.

Intercalation-enhanced topological material Bi2Se3: Tuning charge carrier and phonon dynamics for advanced optoelectronic and terahertz applications

The field of topological materials (TMs) is experiencing significant advancements due to their unique surface states, which offer considerable potential for optoelectronics and terahertz (THz) applications. Intercalation in TMs can effectively modulate these surface states, thereby altering electronic and optical properties and enhancing functionalities. This approach enables the tailoring of material properties for specific applications, broadening the utility of TMs across various technological domains. This study focuses on understanding the charge carrier and phonon dynamics in bismuth selenide (Bi2Se3) intercalated with various metals (AxBi2Se3, where A = Ag, Cr, Ni, Mn, Sm, Zn). We examine carrier trapping, carrier relaxation through optical and acoustic phonons, charge recombination processes, and variations in carrier temperature with probe delay lifetimes. Additionally, we explore coherent optical phonons (COPs) in MIBS, which oscillate at THz frequencies and have potential applications in THz generation and detection. Achieving tunability in the THz frequency of COP modes is a significant challenge; however, our research establishes a correlation between optical and structural properties and the dependence of COP frequencies on effective metal intercalation. This comprehensive investigation elucidates the intricate interplay between surface carriers and phonon dynamics in intercalated TMs, highlighting promising advancements for diverse technological applications, including spintronics, optoelectronics, and THz technology.

Towards robust dichroism in angle-resolved photoemission

Dichroic techniques are highly relevant in the field of topological materials, layered systems, and spin-polarized electronic states. Dichroism in angle-resolved photoemission is per se a matrix element effect, which depends on the initial and final states as well as on the perturbation by the light field. Although matrix element effects in ARPES such as dichroism are important for addressing properties of the initial state wave functions, the results can strongly depend on experimental geometry or final state effects. Combining experimental data on bulk WSe2 taken at soft x-ray photon energies with state-of-the-art photoemission calculations, we demonstrate that a dichroic observable called time-reversal dichroism remains unaffected against variation of photon energy, light polarization, and the angle of incidence. We demonstrate a direct link of TRDAD obtained with both linearly and circularly polarized photons to the initial state properties indicating its broad applicability. The robustness of this matrix element effect indicates a considerable benefit over other dichroic techniques and encourages further experimental and theoretical investigations.

Dynamically Characterizing the Structures of Dirac Points via Wave Packets

Topological non-trivial band structures are the core problem in the field of topological materials. We investigate the topological band structure in a system with controllable Dirac points from the perspective of wave packet dynamics. By adding a third-nearest-neighboring coupling to the graphene model, additional pairs of Dirac points emerge. The emergence and annihilation of Dirac points result in hybrid and parabolic points, and we show that these band structures can be revealed by the dynamical behaviors of wave packets. In particular, for the gapped hybrid point, the motion of the wave packet shows a one-dimensional Zitterbewegung motion. Furthermore, we also show that the winding number associated with the Dirac point and parabolic point can be determined via the center of mass and spin texture of wave packets, respectively. The results of this work could motivate new experimental methods to characterize a system’s topological signatures through wave packet dynamics, which may also find applications in systems of other exotic topological materials.

Scanning tunneling microscopy of strained-α-Sn(0 0 1) surface grown on InSb(0 0 1) substrate

We investigated the surface structure of strained-α-Sn layers grown on InSb(001) surfaces, which have been attracting the attention of the researchers in the field of topological materials, by optimizing the surface cleaning procedures of the InSb substrate surfaces and the growth conditions of the Sn layers. Accordingly, scanning tunneling microscopy observations showed that the (2 × 2) diffraction patterns are due to the double domain (2 × 1) reconstructed surfaces rotated 90° with respect to one another, as previously suggested based on diffraction observations.

Discovery of a weak topological insulating state and van Hove singularity in triclinic RhBi2

Time reversal symmetric (TRS) invariant topological insulators (TIs) fullfil a paradigmatic role in the field of topological materials, standing at the origin of its development. Apart from TRS protected strong TIs, it was realized early on that more confounding weak topological insulators (WTI) exist. WTIs depend on translational symmetry and exhibit topological surface states only in certain directions making it significantly more difficult to match the experimental success of strong TIs. We here report on the discovery of a WTI state in RhBi2 that belongs to the optimal space group Pbar{1}, which is the only space group where symmetry indicated eigenvalues enumerate all possible invariants due to absence of additional constraining crystalline symmetries. Our ARPES, DFT calculations, and effective model reveal topological surface states with saddle points that are located in the vicinity of a Dirac point resulting in a van Hove singularity (VHS) along the (100) direction close to the Fermi energy (EF). Due to the combination of exotic features, this material offers great potential as a material platform for novel quantum effects.

Incorporation of Europium in Bi2Te3 Topological Insulator Epitaxial Films

In the field of topological materials, the interaction between band topology and magnetism remains a current frontier for the advancement of new topological states and spintronic functionalities. Doping with rare-earth elements with large magnetic moments is a current approach to exploit the phenomenology of such interaction. However, dopant solubility into the main matrix plays a major role. In this sense, the present work is focused on elucidating how Eu incorporates into Bi2Te3 lattice as a function of doping. This work reports a systematic investigation of the structural and electronic properties of bismuth telluride epitaxial layers doped with Eu. Bi2Te3 films were grown by molecular beam epitaxy on (111) BaF2 substrates with nominal Eu doping ranging from 0% up to 9%. X-ray diffraction analysis and scanning transmission electron microscopy reveal that Eu atoms enter substitutionally on Bi sites up to 4% of Eu doping. In contrast, the 9% Eu-doped sample contains epitaxially oriented nanoclusters of EuTe. X-ray photoelectron and absorption spectroscopies show that Eu atoms enter the Bi2Te3 crystal matrix in the divalent Eu2+ state for all Eu concentrations. Angle-resolved photoemission experiments indicate that the topological surface state is preserved in the presence of the local magnetic moments introduced by the Eu impurities.

Termination-dependent topological surface states in nodal-loop semimetal HfP2

Symmetry plays a major role in all disciplines of physics. Within the field of topological materials there is a great interest in understanding how the mechanics of crystalline and internal symmetries protect crossings between the conduction and valence bands. Additionally, exploring this direction can lead to a deeper understanding on the topological properties of crystals hosting a variety of symmetries. For the first time, we report the experimental observation of topological surface states in the nodal loop semimetal HfP2 using angle resolved photoemission spectroscopy (ARPES) which is supported by our first principles calculations. Our study shows termination dependent surface states in this compound. Our experimental data reveal surface states linked to three unique nodal loops confirmed by theoretical calculation to be topologically non-trivial. This work demonstrates that transition metal dipnictides provide a good platform to study non-trivial topological states protected by nonsymmorphic symmetry.

Prediction and observation of an antiferromagnetic topological insulator.

Magnetic topological insulators are narrow-gap semiconductor materials that combine non-trivial band topology and magnetic order1. Unlike their nonmagnetic counterparts, magnetic topological insulators may have some of the surfaces gapped, which enables a number of exotic phenomena that have potential applications in spintronics1, such as the quantum anomalous Hall effect2 and chiral Majorana fermions3. So far, magnetic topological insulators have only been created by means of doping nonmagnetic topological insulators with 3d transition-metal elements; however, such an approach leads to strongly inhomogeneous magnetic4 and electronic5 properties of these materials, restricting the observation of important effects to very low temperatures2,3. An intrinsic magnetic topological insulator-a stoichiometric well ordered magnetic compound-could be an ideal solution to these problems, but no such material has been observed so far. Here we predict by abinitio calculations and further confirm using various experimental techniques the realization of an antiferromagnetic topological insulator in the layered van der Waals compound MnBi2Te4. Theantiferromagnetic ordering that MnBi2Te4 shows makes it invariant with respect to thecombination of the time-reversal and primitive-lattice translation symmetries, giving rise to a ℤ2 topological classification; ℤ2=1forMnBi2Te4, confirming its topologically nontrivial nature. Our experiments indicate that the symmetry-breaking (0001) surface of MnBi2Te4 exhibits a large bandgap in the topological surface state. We expect this property to eventually enable the observation of a number of fundamental phenomena, among them quantized magnetoelectric coupling6-8 and axion electrodynamics9,10. Other exotic phenomena could become accessible at much higher temperatures than those reached so far, such as the quantum anomalous Hall effect2 and chiral Majorana fermions3.

A New Three-Dimensional Subsulfide Ir2In8S with Dirac Semimetal Behavior

Dirac and Weyl semimetals host exotic quasiparticles with unconventional transport properties, such as high magnetoresistance and carrier mobility. Recent years have witnessed a huge number of newly predicted topological semimetals from existing databases; however, experimental verification often lags behind such predictions. Common reasons are synthetic difficulties or the stability of predicted phases. Here, we report the synthesis of the type-II Dirac semimetal Ir2In8S, an air-stable compound with a new structure type. This material has two Dirac crossings in its electronic structure along the Γ-Z direction of the Brillouin zone. We further show that Ir2In8S has a high electron carrier mobility of ∼10 000 cm2/(V s) at 1.8 K and a large, nonsaturating transverse magnetoresistance of ∼6000% at 3.34 K in a 14 T applied field. Shubnikov de-Haas oscillations reveal several small Fermi pockets and the possibility of a nontrivial Berry phase. With its facile crystal growth, novel structure type, and striking electronic structure, Ir2In8S introduces a new material system to study topological semimetals and enable advances in the field of topological materials.

Angle resolved photoemission spectroscopy studies on three dimensional strong topological insulators and magnetic topological insulators

<sec> The discovery of topological materials – condensed matter systems that have nontrivial topological invariants – marked the commencement of a new era in condensed matter physics and materials science. Three dimensional topological insulators (3D TIs) are one of the first discovered and the most studied among all topological materials. The bulk material of the TIs have the characteristics of the insulator, having a complete energy gap. Their surface electronic states, on the other hand, have the characteristics of a conductor, with energy band passes continuously through the Fermi surface. The conductivity of this topological surface state (TSS) is protected by the time reversal symmetry of the bulk material. The TSS is highly spin-polarized and form a special spin-helical configuration that allows electrons with specific spin to migrate only in a specific direction on the surface. By this means, surface electrons in TIs can " bypass” the influence of local impurities, achieving a lossless transmission of spin-polarized current. The existence of TIs directly leads to a variety of novel transport, magnetic, electrical, and optical phenomena, such as non-local quantum transport, quantum spin Hall effect, etc., promising wide application prospects. Recently, several research groups have searched all 230 non-magnetic crystal space groups, exhausting all the found or undiscovered strong/weak TIs, topological crystalline insulators (TCI), and topological semimetals. This series of work marks that theoretical understanding of non-magnetic topological materials has gone through a period of one-by-one prediction and verification, and entered the stage of the large-area material screening and optimization.</sec><sec> Parallel to non-magnetic TIs, magnetic topological materials constructed by ferromagnetic or antiferromagnetic long range orders in topological systems have always been an important direction attracting theoretical and experimental efforts. In magnetic TIs, the lack of time reversal symmetry brings about new physical phenomena. For example, when a ferromagnetic order is introduced into a three-dimensional TI, the Dirac TSS that originally intersected at one point will open a magnetic gap. When the Fermi surface is placed just in the gap, the quantum anomalous Hall effect can be implemented. At present, the research on magnetic topology systems is still in the ascendant. It is foreseeable that these systems will be the main focus and breakthrough point of topology material research in the next few years. </sec><sec> Angle-resolved photoemission spectroscopy (ARPES) is one of the most successful experimental methods of solid state physics. Its unique <i>k</i>-space-resolved single-electron detection capability and simple and easy-to-read data format make it a popular choice for both theoretists and experimentalists. In the field of topological materials, ARPES has always been an important experimetnal technique. It is able to directly observe the bulk and surface band structure of crystalline materials, and in a very intuitive way. With ARPES, it is incontrovertible to conclude whether a material is topological, and which type of topological material it belongs to.</sec><sec> This paper reviews the progress of ARPES research on TIs since 2008, focusing on the experimental energy band characteristics of each series of TIs and the general method of using ARPES to study this series of materials. Due to space limitations, this paper only discusses the research progress of ARPES for strong 3D TIs (focusing on the Bi<sub>2</sub>Se<sub>3</sub> series) and magnetic TIs (focusing on the MnBi<sub>2</sub>Te<sub>4</sub> series). Researches involving TCIs, topological Kondo insulators, weak 3D TIs, topological superconductors and heterostructures based on topological insulators will not be discussed. This paper assumes that the reader has the basic knowledge of ARPES, so the basic principles and system components of ARPES are not discussed.</sec>

Bulk contribution to magnetotransport properties of low-defect-density Bi2Te3 topological insulator thin films

An important challenge in the field of topological materials is to carefully disentangle the electronic transport contribution of the topological surface states from that of the bulk. For Bi$_2$Te$_3$ topological insulator samples, bulk single crystals and thin films exposed to air during fabrication processes are known to be bulk conducting, with the chemical potential in the bulk conduction band. For Bi$_2$Te$_3$ thin films grown by molecular beam epitaxy, we combine structural characterization (transmission electron microscopy), chemical surface analysis as function of time (x-ray photoelectron spectroscopy) and magnetotransport analysis to understand the low defect density and record high bulk electron mobility once charge is doped into the bulk by surface degradation. Carrier densities and electronic mobilities extracted from the Hall effect and the quantum oscillations are consistent and reveal a large bulk carrier mobility. Because of the cylindrical shape of the bulk Fermi surface, the angle dependence of the bulk magnetoresistance oscillations is two-dimensional in nature.

Majorana Zero Modes in Graphene

A clear demonstration of topological superconductivity (TS) and Majorana zero modes remains one of the major pending goal in the field of topological materials. One common strategy to generate TS is through the coupling of an s-wave superconductor to a helical half-metallic system. Numerous proposals for the latter have been put forward in the literature, most of them based on semiconductors or topological insulators with strong spin-orbit coupling. Here we demonstrate an alternative approach for the creation of TS in graphene/superconductor junctions without the need of spin-orbit coupling. Our prediction stems from the helicity of graphene's zero Landau level edge states in the presence of interactions, and on the possibility, experimentally demonstrated, to tune their magnetic properties with in-plane magnetic fields. We show how canted antiferromagnetic ordering in the graphene bulk close to neutrality induces TS along the junction, and gives rise to isolated, topologically protected Majorana bound states at either end. We also discuss possible strategies to detect their presence in graphene Josephson junctions through Fraunhofer pattern anomalies and Andreev spectroscopy. The latter in particular exhibits strong unambiguous signatures of the presence of the Majorana states in the form of universal zero bias anomalies. Remarkable progress has recently been reported in the fabrication of the proposed type of junctions, which offers a promising outlook for Majorana physics in graphene systems.

Dirac mass generation from crystal symmetry breaking on the surfaces of topological crystalline insulators.

The tunability of topological surface states and controllable opening of the Dirac gap are of fundamental and practical interest in the field of topological materials. In the newly discovered topological crystalline insulators (TCIs), theory predicts that the Dirac node is protected by a crystalline symmetry and that the surface state electrons can acquire a mass if this symmetry is broken. Recent studies have detected signatures of a spontaneously generated Dirac gap in TCIs; however, the mechanism of mass formation remains elusive. In this work, we present scanning tunnelling microscopy (STM) measurements of the TCI Pb1-xSnxSe for a wide range of alloy compositions spanning the topological and non-topological regimes. The STM topographies reveal a symmetry-breaking distortion on the surface, which imparts mass to the otherwise massless Dirac electrons-a mechanism analogous to the long sought-after Higgs mechanism in particle physics. Interestingly, the measured Dirac gap decreases on approaching the trivial phase, whereas the magnitude of the distortion remains nearly constant. Our data and calculations reveal that the penetration depth of Dirac surface states controls the magnitude of the Dirac mass. At the limit of the critical composition, the penetration depth is predicted to go to infinity, resulting in zero mass, consistent with our measurements. Finally, we discover the existence of surface states in the non-topological regime, which have the characteristics of gapped, double-branched Dirac fermions and could be exploited in realizing superconductivity in these materials.