Constructing Janus junctions is expected to provide a novel perspective for analyzing the intrinsic photocatalytic activity of bismuth oxyhalide. Herein, Janus-typed BiOBr(010)/BiOBr(001) homojunction with efficiently photocatalytic H2 evolution has been achieved by a hydrothermal synthesis. The experimental results show that the designed Janus-typed junction can effectively elevate the carrier lifetime, significantly enhance the photocurrent, and prominently reduce the overpotential. The potential difference (0.34 eV) between (010) facet and (001) facet can drive the carrier transport at the interface for Janus junctions. Theoretical calculations indicate that the designed Janus junction has a stable mechanical structure, providing certain support for the long lifetime of the photocatalyst in the photocatalytic process. The carrier distributions in the Janus junction exhibit the typical characteristic distribution. Interestingly, the photo-generated electrons are only localized in BiOBr(001) component, which embodies significantly a role of n-type semiconductor. This essentially activates HER activity (32 µmol/h g−1) of Janus junction. The holes preferentially localize in the BiOBr(010) component of Janus junction. This component undertaking p-type role reduces the free energy of the rate determining step (from OH* to O*) in the oxygen evolution process (0.88 eV). The Janus junction intensively suppresses the carrier recombination probability at the high symmetry point (reciprocal space) in BiOBr. Ab initio molecular dynamics calculations show that the adsorbed water is easy to decompose on the surface of Janus junction. The obtained results of the photocatalytic water splitting further confirm that the designed BiOBr(010)/BiOBr(001) has Janus characteristics, which are consistent with theoretical calculations and tracer tracing results. The diffusion characteristics of hydrogen also evidence that the interaction of the internal electric field in the Janus junction can drive the HER performance. Additionally, these results offer us a unique angle of view to regulate the charge carrier dynamics by the highly oriented facet coupling for the layered semiconductor.
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