Fabrication Of Photonic Devices Research Articles

Fabrication of micro patterns on BaTiO3:Er3+/Yb3+ perovskite films by femtosecond laser micromachining

Femtosecond lasers currently show much promise as potential sources for the fabrication of optical and photonic devices, displaying high performance due to their high resolution, excellent geometric flexibility, and low collateral damage. In particular, devices displaying high performance based on BaTiO3:Er3+/Yb3+ (BTEY) films have been widely investigated, promising for the innovation of perovskite patterning applications. Herein, we fabricated BTEY perovskite films by spin coating at room temperature. XRD pattern and Raman spectroscopy analysis of the BTEY films revealed a tetragonal crystal structure. The study of Williamson-Hall's method calculated the strain and crystallite size for the BTEY film. Different parameters in the exploiting cylindrical focusing of an fs-laser were adopted to modulate the crater cavity of patterning, which gives the opportunities to evaluate their impact on the energy ablation threshold (Eth). It was found that cavity radius is proportional to the energy cross-section, thus providing wide range dependence of damaged spot size versus pulse energy. The Eth was measured using Liu's method, determining a value of Eth that decreased from 33.4 nJ to 22.4 nJ when the number of applied laser pulses per spot increased. It is found that the number of pulses per spot low possesses the best performance, successfully producing highly uniform patterning. Moreover, the evolution with the number of pulses also revealed changes in the surface morphology of the crater cavity via AFM and scanning confocal fluorescence microscopy (SCFM) analysis. These results are crucial for determining the Eth required to damage the material, understating the driving mechanism of formations of cavity profile surfaces, and changes in their optics properties in the edges owing to the balling effects and structural defects.

Sputtering Al2O3 enhanced bandgap engineering for integrated photonic devices

We present experimental results of the application of Sputtering enhanced Quantum Well Intermixing (QWI) process, where the bandgap of InGaAsP/InP quantum well laser microstructure is effectively modified by intermixing quantum well and potential barrier layers through sputtering Al2O3-QWI. This technique creates point defects through plasma induced disordering in the process of sputtering Al2O3. The subsequent Rapid thermal Anneal (RTA) process is performed to increase the diffusion rate and quantum well intermixing. This results in an increased transitional energy and hence it modifies the bandgap essential for the development of next generation complex photonic integrated circuits (ICs). We report a large bandgap blue shift of 144 nm is achievable with a very high increase in photoluminescence (PL) intensity. The experimental results of the bandgap shifted waveguides and laser diodes are presented. Photoluminescence (PL) measurements of InGaAsP/InP laser structure were taken before and after Al2O3-QWI process. The proposed technique can provide reliable and fast post-growth wafer level fabrication of photonic devices monolithically.

Direct Writing of Fluorescent Semiconducting Nanoparticles on Polydimethylsiloxane by Ultrashort-Pulsed Laser Processing: Implications for Electronic and Photonic Device Fabrication

Direct Writing of Fluorescent Semiconducting Nanoparticles on Polydimethylsiloxane by Ultrashort-Pulsed Laser Processing: Implications for Electronic and Photonic Device Fabrication

Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution.

A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are some of the outstanding properties that have made ScxAl1-xN a promising material in numerous MEMS and optoelectronics applications. One of the substantial challenges of fabricating ScxAl1-xN devices is its difficulty in etching, specifically with higher scandium concentration. In this work, we have developed an experimental approach with high temperature annealing followed by a wet etching process using tetramethyl ammonium hydroxide (TMAH), which maintains etching uniformity across various Sc compositions. The experimental results of etching approximately 730 nm of ScxAl1-xN (x = 0.125, 0.20, 0.40) thin films show that the etch rate decreases with increasing scandium content. Nevertheless, sidewall verticality of 85°~90° (±0.2°) was maintained for all Sc compositions. Based on these experimental outcomes, it is anticipated that this etching procedure will be advantageous in the fabrication of acoustic, photonic, and piezoelectric devices.

Effect of the incident polarization on in-plane and out-of-plane spin splitting near the critical angle.

To reveal the effect of the incident polarization on the spin splitting of the photonic spin Hall effect (that is, the spatial and angular in-plane and out-of-plane spin splitting), we systematically study the phenomena and characteristics of these four spin splitting generated when the beam with arbitrary linear polarization is reflected from the non-absorbing medium interface and the absorbing medium interface. Several features of the relationship between the incident polarization and the four kinds of spin splitting are found. In addition, It is also found that the in-plane angular and spatial shifts are significantly enhanced near the critical angle, even reaching their theoretical upper limit. However, the out-of-plane shifts are not enhanced. The research in this paper will contribute to a deeper understanding of PSHE. These findings can also provide new ideas and methods for precision metrology, photonic manipulation, and photonic device fabrication.

Vertical Architecture Solution-Processed Quantum Dot Photodetectors with Amorphous Selenium Hole Transport Layer

Colloidal quantum dots (CQDs) provide wide spectral tunability and high absorption coefficients owing to quantum confinement and large oscillator strengths, which along with solution processability, allow a facile, low-cost, and room-temperature deposition technique for the fabrication of photonic devices. However, many solution-processed CQD photodetector devices demonstrate low specific-detectivity and slow temporal response. To achieve improved photodetector characteristics, limiting carrier recombination and enhancing photogenerated carrier separation are crucial. In this study, we develop and present an alternate vertical-stack photodetector wherein we use a solution-processed quantum dot photoconversion layer coupled to an amorphous selenium (a-Se) wide-bandgap charge transport layer that is capable of exhibiting single-carrier hole impact ionization and is compatible with active-matrix readout circuitry. This a-Se chalcogenide transport layer enables the fabrication of high-performance and reliable solution-processed quantum dot photodetectors, with enhanced charge extraction capabilities, high specific detectivity (D* ∼ 0.5–5 × 1012 Jones), fast 3 dB electrical bandwidth (3 dB BW ∼ 22 MHz), low dark current density (JD ∼ 5–10 pA/cm2), low noise current (in ∼ 20–25 fW/Hz1/2), and high linear dynamic range (LDR ∼ 130–150 dB) across the measured visible electromagnetic spectrum (∼405–656 nm).

Spatially Templated Nanolines of Ru and RuO2 by Sequential Infiltration Synthesis

Nanoscale patterning of inorganics is crucial for the fabrication of advanced electronic, photonic, and energy devices. The emerging sequential infiltration synthesis (SIS) method fabricates nanofeatures by block-selective vapor-phase growth in block copolymer templates with tunable patterns. Yet, SIS has been demonstrated mainly for Al2O3 and a few other metal oxides, while deriving metal nanostructures from a single SIS process is a challenge. Here, we present SIS of the Ru metal in polystyrene-block-polymethyl methacrylate (PS-b-PMMA) templates without any pretreatment, using alternating infiltration of RuO4 and H2. RuO4 interacts selectively and strongly with the aromatic C═C and C–H groups in PS, leaving the PMMA domains inert. Density functional theory calculations corroborate that the PS–RuO4 interaction is energetically favorable, with a calculated interaction energy of −1.65 eV, whereas for PMMA–RuO4, the calculated energy of −0.05 eV indicates an unfavorable interaction. Morphological analysis on the di-BCP after the RuO4-H2 process indicates an increase in contrast as a function of SIS cycles and templated Ru incorporation. The crystalline nature of the Ru deposits is confirmed using grazing incidence wide-angle X-ray scattering. Plasma-aided removal of the organic components yields Ru nanolines with lateral dimensions of ca 20 nm. We further highlight the broad potential of RuO4 as a reactant for SIS by generating RuO2 nanopatterns via alternating RuO4 and methanol infiltration.

(Invited) Surface Modification to Control Wetting and Adhesion of Aqueous Solutions

rf plasmas and electrochemical treatments have been used extensively for thin film deposition and etching in the fabrication of microelectronic and photonic devices. These methods can be applied to non-traditional substrates (e.g., paper and stainless steel) to alter surface and bulk properties to create (i) paper-based analytical devices with application to microfluidic devices, and (ii) antibacterial structures on stainless steel. Two examples will be described. First, the effects of plasma-based oxygen etching of cellulose surfaces followed by plasma-enhanced fluorocarbon film deposition will be described and shown to control wetting and adhesion of water droplets. These process steps can also be used to form fully enclosed hydrophilic channels in bulk paper and thereby allow microfluidic device fabrication on inexpensive and renewable substrates. Electrochemical etching of stainless steel creates micro- and nano-structures on stainless steel surfaces that repel water and bacteria. These surfaces have potential applications in orthopedic implants and consumer metal products prone to bacterial contamination.

Anodising of aluminium in formate solutions with formation of porous alumina arrays

ABSTRACT New applications of porous anodic aluminium oxide (alumina) structures for the fabrication of photonic devices, etching masks, and periodic pore templates with prospective magnetic, photoluminescent, anti-reflecting properties recently are of high interest. In this respect, new anodising processes for controllable formation of periodic structures in unconventional solutions at low voltages might be challenging. In this study, the anodic behaviour of aluminium in aqueous formate solutions was studied within a wide range of concentrations, pH, electrolyte temperatures, anodising times, and voltages. It was established that the thickness of porous anodic films depended on the concentration of solution applied (c), pH, bath temperature (T), and voltage (U a) increasing with increase in c, U a, and T. The thickest films were formed in the solution containing 0.2 mol L−1 formic acid at a pH of 2.5. These films contained up to 5.8 at% of entrapped carbon. The transition of porous anodising to the ‘burning’ type occurred at 22–25 V. Under appropriate anodising conditions ordered hexagonal cell arrays can be formed.

Tunable Plasmonic Devices by Integrating Graphene with Ferroelectric Nanocavity

AbstractGraphene plasmons can become the fundamental of novel conceptual photonic devices, resulting from their unique characteristics containing excitation at room temperature and tunable spectral selectivity in different frequencies. The pursuit of efficiently exciting and manipulating graphene plasmons is necessary and significant for high‐performance devices. Here, the graphene plasmon wave propagating in ferroelectric nanocavity array is investigated. It has been experimentally shown that the periodic ferroelectric polarizations can be used for doping graphene into desired spatial carrier density patterns. Based on a theoretical model that considers periodic ununiform conductivity across graphene sheet, the simulation results show surface plasmon polaritons (SPP) in graphene can be excited by an incident light in a similar way to the excitation of photonic crystal resonant modes. The graphene SPP resonance can be tuned from ≈720 to ≈1 000 cm−1 by rescaling the ferroelectric nanocavity array, and from ≈540 to ≈780 cm−1 by dynamically changing the applied gate voltage. This strategy of graphene carrier engineering to excite SPP offers a promising way for large‐scale, nondestructive fabrication of novel graphene photonic devices.

(Invited) SiGe/SOI System: Mechanisms of Condensation and Strain Relaxation

Silicon-Germanium strain engineering has been used for more than two decades in silicon based devices and has contributed to the scaling down of a transistor’s size and to significant improvements in device performance. However, while conventional silicon-germanium based electronics has experienced rapid and steady growth, thanks to this continuous miniaturization of transistors, this trend cannot continue indefinitely. Industry has already moved to alternate methods such as FinFET devices, in which a thin silicon channel is placed vertically, and the FD-SOI (FD-SGOI) design consisting of a thin film Si(SiGe) channel placed horizontally. For nodes scaled down below 28 nm, low power operation will be inherently hindered by both the imperfect interface, non-uniformity of ultra-thin films and quantum confinement effects, which increase the effective bandgap. In these devices, despite the intense research activity on the strained SiGe ultra-thin body, which accounts for a large portion of such microelectronic devices (below the 45 nm node), we still fail to properly understand the mechanisms that limit hole and electron mobilities in SGOI layers. In addition, one of the main challenges for Si based devices remains the fabrication of efficient group-IV photon sources / photon detectors compatible with the microelectronic industry, which would usefully replace the integration of III-V heterostructures on Si. The major bottleneck is that group-IV semiconductor elements have indirect bandgaps, but with possibilities of being transformed to direct bandgaps using strain engineering strategies.In this presentation, we will review the formation mechanism of Ge-rich layers on SOI by condensation at different temperatures. TEM cross-section and GPA analysis of the heterostructures will be presented. We will also report the physical and optical properties of these heterostructures. Special attention is devoted to the influence of the SiGe thickness reduction (up to few MLs), where quantum confinement is prominent in the optical properties of the layers. Raman and PL results will be presented to better explain such confinement behavior. We show that novel SGOI substrates could represent a key strategy for the fabrication of future photonic devices.

Ge−Sb Thin Films Patterned by Heat‐Mode Lithography

A binary Te‐free phase‐change material Ge9.15Sb90.85 (GS) is investigated as the heat‐mode resist. A high etching selectivity ratio can be achieved by matching a suitable developer. A reasonable explanation for the positive development is proposed based on the chemical binding energy analysis. High‐resolution relief patterns are fabricated on the GS films by laser direct writing and wet etching. It reveals that GS is a promising heat‐mode resist for the fabrication of photonic devices.

Plasma-Assisted Microcontact Printing.

Microcontact printing, polymer pen lithography, and their variations have attracted interests from a broad spectrum of research fields as a result of the feasibility of defining patterns in micro- and nanoscales. In this work, we have proposed and demonstrated a novel lithography method, named plasma-assisted microcontact printing (PA-μCP). Unlike the previous printing methods, where a direct contact is normally required for the transport of liquid-phase inks, plasma-deposited fluorocarbon (FC) has been employed in PA-μCP as the ink material, which can be transferred from the stamp to substrates through a thermal evaporation process. The geometry of the patterns can be modified by adjusting the design of stamp patterns and the contact time, and transferred FC patterns can be used directly as an etch mask to create microstructures in the substrate materials. We have demonstrated the possibility of performing multi-patterning with PA-μCP, where FC patterns can be generated conformally on structured substrates. Because the height of FC patterns is closely related to the local pattern designs, PA-μCP can be used for grayscale patterning. As a proof of concept, Fabry-Perot planar cavities are fabricated with grayscale PA-μCP for structure color printing. We believe PA-μCP is distinguished from conventional techniques by its printing mechanism, which can pave the way for convenient fabrication of photonic, electronic, and biological devices.

Characterizations of Single-Crystal Lithium Niobate Thin Films

Single-crystal lithium niobate thin films (lithium niobate on insulator, LNOI) are becoming a new material platform for integrating photonics. Investigation into the physical properties of LNOI is important for the design and fabrication of photonic devices. Herein, LNOIs were prepared by two methods: ion implantation and wafer bonding; and wafer bonding and grinding. High-resolution X-ray diffraction (HRXRD) and confocal Raman spectroscopy were used to study the LNOI lattice properties. The full-width at half-maximum (FWHM) of HRXRD and Raman spectra showed a regular crystal lattice arrangement of the LNOIs. The domain inversion voltage and electro-optical coefficient of the LNOIs were close to those of LN bulk material. This study provides useful information for LNOI fabrication and for photonic devices in LNOI.

Ultrafast Laser Direct-Writing of Self-Organized Microstructures in Ge-Sb-S Chalcogenide Glass

The structuring of mid-IR materials, such as chalcogenide glass (ChG), at the micro and nano scales, is of high interest for the fabrication of photonic devices in general, and for spectroscopy applications in particular. One efficient method for producing regular patterns with a sub-micron to micron length scale is through self-organization processes occurring during femtosecond laser exposure. These processes occur in a broad set of materials, where such self-organized patterns can be found not only on the surface but also within the material volume. This study specifically investigates the case of chalcogenide glass (Ge23Sb7S70) exposed to femtosecond laser pulses, inducing pulse-to-pulse nanostructure formation that is correlated to the glass network structural evolution using Raman spectroscopy as well as morphological and elemental microscopy analysis.

Photonic crystal L3 cavity laser fabricated using maskless digital photolithography

Abstract Projection photolithography using an extreme-ultraviolet light source is the core technology that has enabled patterning on the scale of a few nanometers that is required for modern electronic chips. However, this high-end system is neither affordable nor needed for photonics where critical feature sizes are of 100s of nanometers (or of submicron). Although electron-beam lithography can provide a means for photonic device fabrication, it suffers from extremely low throughput. Therefore, a lithographic technique for submicron pattern generation at high throughput and low cost is in high demand. This group recently showed that maskless digital photolithography (MDPL), a convenient and versatile photolithographic technique that requires no photomask, could potentially address this demand by demonstrating photonic crystal (PhC) patterns with submicron periodicity and associated PhC band-edge lasers. In this paper, we report the fabrication of a PhC L3 cavity laser, which contains irregular air holes in terms of their positions and sizes, using the MDPL technique. Successful generation of such an aperiodic and nontrivial submicron pattern requires thorough understanding and scrupulous manipulation on light diffraction. Our achievements should provide the concrete foundation upon which compact, versatile, convenient, speedy, and economical lithographic tools for arbitrary submicron pattern generation can be developed.

Controlling thermal radiation in 1D bodies made from lithium niobates or liquid crystals

Thermal radiation of one-dimensional bodies is theoretically investigated. Null-gap and zero-index are found to impact photon gas. Thermal parameters of thermal radiation energy, photon gas pressure, specific heat, equilibrium number and entropy are controllable via manipulation of optical parameters and geometry. When thickness or refractive index augments, the thermal radiation energy associated with 1D bodies holding null-photonic-gap first suppresses and then enhances. It is interesting to see the negative thermal radiation energy, which illustrates the absorption of thermal energy. Furthermore, the photon gas pressure, the entropy, the specific heat and the equilibrium number are all suppressed by increasing the refractive index or layer thickness ratio. The thermal radiation along with zero-refractive-index can be blocked in these bodies with specific design of photonic parameters. This implies new application of 1D bodies for fabrication of novel functional photonic devices.

Ion Beam Modification for Si Photonics

Ion implantation has played a significant role in semiconductor device fabrication and is growing in significance in the fabrication of Si photonic devices. In this paper, recent progress in the growth and characterization of Si and Ge quantum dots (QDs) for photonic light-emitting devices is reviewed, with a focus on ion implantation as a synthetic tool. Light emissions from Si and Ge QDs are compared with emissions from other optically active centers, such as defects in silicon oxide and other thin film materials, as well as rare-earth light emitters. Detection of light in silicon photonics is performed via the integration of germanium and other elements into detector structures, which can also be achieved by ion implantation. Novel techniques to grow SiGe- and SiGeSn-on-Si structure are described along with their application as detectors for operation in the short-wave infrared range.

Two-dimensional Material based Printed Photonics: A Review

Abstract Functional inks based on two-dimensional (2D) materials have potential application in building new and commercially viable photonic devices via different printing techniques. Printed photonics using 2D material-based inks brings together the unique optical properties of 2D materials via different printing techniques for fabricating photonic devices that can revolutionize various sectors in telecommunication, information technology, sensors and computing. Understanding the need for a comprehensive guide for researchers in the field of printed photonics based on 2D material inks, we have brought together the essential concepts in this field. The review begins with discussion on optical properties of commonly used 2D materials in photonic applications. Since different printing techniques demand different ink rheological properties for efficient printing, we have discussed it for different printing techniques. The substrates compatible for printed photonics application are also listed. Mechanisms of common printing methods in device fabrication are explained with more focus on the most commonly demonstrated method in printed photonics, i.e., inkjet printing. We have discussed a few examples of photonic devices where printed photonics is already demonstrated with 2D material functional inks. Finally, our perspective on future prospects of 2D materials, with excellent optical properties, that are yet to be formulated into inks for new and efficient photonic device fabrication as well as devices with potentially new functionalities are listed.

High-sensitivity measurements of the nonlinear absorption coefficient of wide bandgap oxide thin films with the Z-scan method

The nonlinear response of wide bandgap oxide thin films gradually emerges and attracts attention with the development of an ultra-short and ultra-intense laser. In Z-scan technique, due to the extremely lower nonlinear response of thin film compared with the common substrate, it isn’t easy to measure the multiphoton absorption coefficient of wide bandgap oxide thin films. In this study, a method is proposed to suppress the substrate impact and improve the thin film measurement sensitivity. To make the thin film nonlinear intensity dominate the total intensity, including unwanted substrate impact, material and thickness of the substrate are analyzed. Considering the nonlinear effects of different substrates and the adhesion between the substrate and the thin film, 50 μm MgF2 and quartz glass are selected as the substrate for deposition. The nonlinear intensity of substrate is suppressed to at least 80% of the whole element or can even be ignored so that the normalized transmittance of the thin film can be obtained effectively. The two-photon and three-photon absorption coefficients of HfO2, Al2O3, and SiO2 thin film are measured at different wavelengths. The nonlinear absorption response measurements of wide bandgap oxide thin films can advance the design and fabrication of low-loss photonic devices in ultra-fast lasers.