Extended Gate Research Articles

PREPARATION AND CHARACTERISTICS OF SCREEN-PRINTED CALCIUM ION SENSOR

In this study, the ruthenium dioxide ( RuO2 ) thin film as sensing film of pH sensor was deposited on polyethylene terephthalate (PET) by radio frequency sputtering. The pH-sensor based on separative extended gate field effect transistor (SEGFET) was fabricated by screen-printed technology through two different fabrication methods. And the calcium ion selective membrane was dropped on sensing window of SEGFET to perform the calcium ion sensor. In addition, the difference between the two fabrication methods was studied, and the hysteresis effect of calcium ion sensor was analyzed in this study. At present, the pH-sensor has been fabricated successfully, its sensitivity and linearity are 60.36 mV/pH and 0.999 from pH1 to pH11 at 30°C, respectively. As well as the sensitivity and linearity of calcium ion sensor are 27.71 mV/pCa and 0.987 in the range of 1 M–10-4 M CaCl2 solutions, respectively.

An oxide filled extended trench gate super junction MOSFET structure

This paper proposes an oxide filled extended trench gate super junction (SJ) MOSFET structure to meet the need of higher frequency power switches application. Compared with the conventional trench gate SJ MOSFET, new structure has the smaller input and output capacitances, and the remarkable improvements in the breakdown voltage, on-resistance and switching speed. Furthermore, the SJ in the new structure can be realized by the existing trench etching and shallow angle implantation, which offers more freedom to SJ MOSFET device design and fabrication.

Glucose Detection With a Commercial MOSFET Using a ZnO Nanowires Extended Gate

ZnO nanowires were grown on Ag wire with a diameter of ~250 mum and used in an electrochemical sensor. The enzyme glucose oxidase (GOD) was immobilized on the ZnO nanowires, and the Ag wire was connected directly to the gate of a MOSFET. Upon exposure to glucose (1- 100 muM), the electrochemical response from the GOD induced a stable measurable voltage change on the gate leading to a strong modulation of the current through the MOSFET. For a sensor with uniform ZnO nanowires functionalized with GOD, a fast response time of less than 100 ms was demonstrated. The effect of the uniformity of the ZnO nanowires on the sensing property was also investigated. The extended-gate arrangement facilitated glucose detection in small sample volumes, and made it possible to demonstrate the present sensor concept using a standard low-threshold MOSFET. The extended-gate MOSFET sensor approach demonstrates the possibility and potential of the use of nanostructures coupled to standard electronic components for biosensing applications.

Overflow control mechanism (OCM) for Ethernet passive optical networks (EPONs)

Feature Issue on Passive Optical Network Architectures and TechnologiesThe nonfragmentable nature of Ethernet data frames, as well as operation of the priority oriented packet schedulers in the optical network units, in conjunction with heavy network load conditions and the lack of detailed knowledge about the queue's composition at the optical line terminal (OLT) level, result in the creation of upstream channel slot remainders. The existing methods, in the form of nonpreemptive packet schedulers and multithreshold reporting process defined vaguely by the IEEE 802.3-2005 standard, result in either increased packet delay or Ethernet passive optical network (EPON) system incompatibility, respectively, since threshold processing was never officially defined in the scope of the respective EPON standard. We propose an alternative approach, based on basic modifications of the standard and extended GATE multipoint control protocol data unit format and meaning, allowing for the OLT packet scheduling agent to grant always exactly the requested slot size, thus preventing creation of any upstream channel slot remainders. It is estimated that, on average, ∼3% of upstream channel bandwidth can be salvaged when slot remainders are absent in the upstream channel transmission.

Polycrystalline silicon ion sensitive field effect transistors

We report the operation of polycrystalline silicon ion sensitive field effect transistors. These devices can be fabricated on inexpensive disposable substrates such as glass or plastics and are, therefore, promising candidates for low cost single-use intelligent multisensors. In this work we have developed an extended gate structure with a Si3N4 sensing layer. Nearly ideal pH sensitivity (54mV∕pH) and stable operation have been achieved. Temperature effects have been characterized. A penicillin sensor has been fabricated by functionalizing the sensing area with penicillinase. The sensitivity to penicillin G is about 10mV∕mM, in solutions with concentration lower than the saturation value, which is about 7 mM.

Progress in device isolation technology

This contribution gives a brief overview on the current status of device isolation technology. Starting with conventional shallow-trench-isolation (STI), the challenges introduced by this approach are outlined. Based on this discussion, the concept of the recently developed extended trench isolation gate technology (EXTIGATE) is presented. It will be shown that EXTIGATE not only provides a relief from the drawbacks of conventional STI processing, but also offers promising alternatives for front-end process integration, device optimization and specific applications.

Study of indium tin oxide thin film for separative extended gate ISFET

Abstract In this study, the indium tin oxide (ITO) was used as a sensitive film for H + ion sensitive field effect transistor (ISFET). The sensitive characteristics of ITO glass structure for separative extended gate ion sensitive field effect transistors (EGFET) were studied. ITO thin film is used for the first time as a H + ion sensitive film which has a linear pH sensitivity of Nerstern response, about 58 mV/pH, between pH 2 and pH 12.

Separate structure extended gate H +-ion sensitive field effect transistor on a glass substrate

In our research, glass was used as a substrate for an H + ion sensitive field effect transistor (ISFET). The sensitive characteristics of five structures for separate extended gate ion sensitive field effect transistors (EGFET) were studied. The components included tin oxide (SnO 2)/aluminum/micro slide glass, tin oxide/aluminum/corning glass, indium tin oxide (ITO) glass, tin oxide/indium tin oxide glass and tin oxide/micro slide glass. Indium tin oxide (ITO) thin film was first time used as an H + ion sensitive film, which has a linear pH Nerstern response sensitivity, about 58 mV/pH, between pH 2 and 12. In addition, the sensing area effect of the tin oxide/glass, tin oxide/ITO glass and ITO glass structure is discussed. The results show that the tin oxide/ITO glass structure EGFET has the best drift, hysteresis and sensing area characteristics.

Immature B lymphocytes from adult bone marrow exhibit a selective defect in induced hyperexpression of major histocompatibility complex class II and fail to show B7.2 induction.

Mature B lymphocytes respond to antigen receptor ligation by phenotypic changes, including up-regulation of major histocompatibility complex class II molecules and expression of B7.2, which are required for initiating and sustaining a productive interaction with T helper cells. We have previously demonstrated that neonatal B cells fail to show a similar up-regulation of class II and B7.2 expression following B-cell receptor (BCR) ligation, although these responses could be induced by other stimuli. Here we demonstrate that immature B cells from adult bone marrow exhibit even more profound defects in these responses, as they fail to up-regulate class II in response to either BCR ligation or interleukin-4. Moreover, bone marrow-derived, immature B cells could not be induced to express B7.2 either by receptor cross-linking or by lipopolysaccharide. These differences in the inducible expression of class II and B7.2 appear to be intrinsic to the B cells, as they were retained in purified populations of B-lineage cells and could not be induced in mature B cells by co-culture with bone marrow cells. Furthermore, short-term culture of bone marrow permitted B-cell maturation, which was accompanied by acquisition of responsiveness to the same stimuli as mature, splenic B cells. The inability of immature B cells to show these responses provides a molecular explanation for their reported deficiency in interacting with T cells. Failure of immature B cells to inducibly express B7.2 may also be important for the establishment of self tolerance in the B-cell compartment.

WASMII: An MPLD with data-driven control on a virtual hardware

Through the use of an extended field programmable gate array (FPGA) technology, a large digital circuit can be realized on a relatively small amount of real hardware. Several configuration RAM modules are provided inside the FPGA chip, and the configuration of the gate array can be rapidly changed by replacing the active module. Data for configuration are transferred from an off-chip backup RAM to an unused configuration RAM module. A novel computation mechanism called the WASMII, which executes a target dataflow graph directly, can be proposed on the basis of this “virtual hardware.” A WASMII chip consists of the FPGA for virtual hardware and an additional mechanism to replace configuration RAM modules in a data-driven manner. Configuration data are preloaded in the order assigned in advance by a static scheduling preprocessor. By connecting a number of WASMII chips, a highly parallel system can be easily constructed.