The core issue of light emitting diodes (LEDs) for actual application is the thermal stability of phosphors. Silicon nitride (Si 3 N 4 ) is generally recognized as especially important structural material due to its excellent mechanical properties at extreme high temperature. In this work, Si 3 N 4 : Eu was demonstrated to be an excellent luminescence functional material for LEDs. The discarded corner-waster silicon raw material was utilized to act as the precursor. The Si 3 N 4 :Eu phosphor was synthesized by a facile nitriding process at elevated temperature. The pure α-Si 3 N 4 :Eu nanorods were successfully obtained by adjusting the doping concentration of Eu. It is coexistence with mixed-valence (divalent and trivalent) for Eu in α-Si 3 N 4 according to X-ray photoelectron spectroscopy. The synthesized α-Si 3 N 4 :Eu nanorods showed bright yellow under the excitation of 365 nm (UV) and white luminescence by 460 nm chip (Blue). The Si 3 N 4 :Eu nanorods possess excellent thermal stability, maintains nearly 70% of the origin intensity even at temperatures over 300 °C. The Si 3 N 4 :Eu nanorods demonstrated comparable performance to commercial YAG:Ce 3+ (YAG). Moreover, the long-term thermal stability of Si 3 N 4 :Eu nanorods is superior to commercial YAG, revealing the enhanced service performance. This work not only presents a facile Si 3 N 4 :Eu nanorods green synthesis route from waste utilization, but also offers an enhanced service performance for the high temperature LEDs application.
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