During the removal of a HDI-PR (high-dose-implanted photoresist) for semiconductor etching process, HDI-PR (for KrF PR) residues on the semicondutor surface cause many problems. Therefore, we suggested the PLVA method, consisting of a dry and wet mixed process, for the wafer cleaning process. The hardness of the HDI-PR dipped in normal PR stripper (without PLVA) was about 379.31 MPa, but the hardness of the HDI-PR dipped in PR stripper with PLVA treatment enormously lower, and the lowest hardness of the HDI-PR dipped in the PLVA stripper was about 174.04 MPa. From these results, we may conclude that the PLVA method was very effective for changing the physical properties of the PR surface.