Epitaxial Lateral Overgrowth Technique Research Articles

SOI by CVD: Epitaxial Lateral Overgrowth (ELO) process—Review

The ELO process (Epitaxial Lateral Overgrowth), based on the growth of silicon film over an SiO 2 mask by the CVD technique, has been reviewed. The silicon film is locally seeded in openings of the SiO 2 mask from which it overgrows the oxide. The key to success is selective deposition; growth conditions which give growth of silicon over exposed silicon surfaces and at the same time prevent nucleation of silicon over oxide. These conditions, together with growth and surface morphology of obtained ELO films, are discussed as a function of gas composition, growth temperature, growth procedure and type of reactor. Defect structure and electric properties of ELO films are also reviewed together with performance of devices made in these films. Data obtained so far showed that monocrystalline silicon films with smooth mirror-like surfaces and low defect density can be grown over 20 μm wide SiO 2 islands by the optimized ELO process. The performance of devices made in these ELO films was similar to devices made in homoepitaxial layers. On the basis of these data it is believed that the ELO technique is a promising approach for the fabrication of SOI films.

Growth Process of Silicon Over SiO2 by CVD: Epitaxial Lateral Overgrowth Technique

The epitaxial lateral overgrowth (ELO) process of depositing single crystal silicon over a mask is described. A CVD technique has been developed which consists of depositing silicon in openings in a mask and then growing the silicon laterally over the film. By optimizing the concentration in the gas, growth temperature, and the use of a growth procedure based on a series of growth/etch steps the nucleation of polysilicon over has been eliminated and monocrystalline ELO films have been grown. Low defect density ELO films have been achieved by orientating the oxide islands along the [010] direction on (100) substrates. The growth kinetics, overgrowth morphology, and defect formation in ELO films are described as a function of the growth conditions. One can conclude that optimization of the growth process has allowed us to grow monocrystalline, low defect density ELO films with smooth mirrorlike surfaces.

Growth of Electronic Quality Silicon Over SiO2 by Epitaxial Lateral Overgrowth Technique

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