Exploring and realizing the luminescence characteristics of rare earth metal (RE) ions doped gallium oxide (Ga2O3) is crucial for developing optoelectronic device applications. The current research used the solid-state reaction approach to synthesize Ga2O3 microrods doped with various europium (Eu3+) concentrations (0.1, 0.2, 0.3, 0.5, 0.75, and 1 mol). X-ray diffraction (XRD) and Raman spectral analyses confirm the monoclinic structure of β-Ga2O3. The intensity of the Raman phonon modes decreased and a peak shift was observed for Eu:β-Ga2O3. The electron microscopy (SEM, TEM) images depicted a nearly uniform distribution of microrods for undoped and Eu:β-Ga2O3 samples. The interplanar distance (d = 0.290 nm, 0.561 nm, and 0.433 nm), from HR-TEM images, corresponding to (0 0 4), (1 0 0), and (1 0 2) crystallographic orientations confirm the monoclinic structure of β-Ga2O3. The elemental mapping images showed a nearly homogeneous Ga, O, and Eu distribution. The UV–visible diffuse reflectance spectroscopy (UV-DRS) showed a notable reduction in the bandgap as the Eu3+ concentration increased. The emission spectra of Eu: β-Ga2O3 microrods showed a narrow red emission at 612 nm (5D0 → 7F2), which relates to the 5D0 → 7Fj (j = 0, 1, 2, 3) energy level arising from an intra-4f transition of Eu3+ ions upon 394 and 465 nm excitation. The red emission was found to increase with Eu content up to 0.5 mol.%. A quenching of emission due to the multipole–multipole interactions was obtained beyond 0.5 mol.% of Eu. The absolute quantum yield (η) calculated for Eu: β-Ga2O3 (0.5 mol.%) was 3.82 %. The luminescence decay curve using the bi-exponential fit and the average lifetime (τ) of the Eu: β-Ga2O3 (0.5 mol.%) was found to be ∼0.172 ms. CIE chromaticity and correlated color temperature analyses of Eu:β-Ga2O3 microrods yielded a red emission with a superior color purity (93 %). The obtained results suggest that Eu:β-Ga2O3 (0.5 wt.%) microrods could be one of the potential candidates for red light sources.
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