Electronic Properties Research Articles

Role of growth temperature on microstructural and electronic properties of rapid thermally grown MoTe2 thin film for IR detection

Abstract In the field of electronic and optoelectronic applications, two-dimensional materials are found to be the promising candidates for futuristic devices. For the detection of infrared light, MoTe2 possesses an appropriate bandgap for which p-MoTe2/n-Si heterojunctions are suits well for photodetectors. In this study, rapid thermal technique is used to grow MoTe2 thin films on silicon (Si) substrates. Molybdenum (Mo) thin films were deposited using sputtering system on Si substrate and Tellurium (Te) film was deposited on Mo film by thermal evaporation technique. The substrates with Mo/Te thin films are kept in a face-to-face manner inside the RTP furnace. The growth was carried out at a base pressure of 2 torr with the flow of 160 sccm argon gas at different temperatures ranging from 400 °C to 700 °C. The XRD peaks appeared around 2θ = 12.8°, 25.5°, 39.2°, 53.2° corresponding to (002), (004), (006) and (008) orientation of hexagonal 2H-MoTe2 structure. The characteristic Raman peaks of MoTe2,observed at ~119 cm−1 and ~172 cm−1,corresponds to in-plane E1g and out-of-plane A1g mode of MoTe2, whereas the prominent peaks of the in-plane E12g mode at ∼234 cm−1, and the out-of-plane B12g mode at ∼289 cm−1 are also observed. RMS roughness is found to be increasing with increasing growth temperature. The bandgap of MoTe2 is calculated using Tauc plot and found to be 0.91 eV. Electrical characterizations are carried out using current-voltage and current-time measurement, where the maximum responsivity and detectivity are found to be 127.37 mA/W and 85.21 × 107 Jones for growth temperature of 600 °C and IR wavelength illumination of 1060 nm.

Exploring the Physical Properties of Mn2VSi and Mn2VGe Heusler Alloys Under High Pressure Conditions: A Theoretical Investigation Using GGA and TB-mBJ Calculation

Abstract The investigation into Mn2VSi and Mn2VGe Heusler alloys has yielded crucial insights into their structural, mechanical, thermal, electronic, and magnetic attributes. Employing Density Functional Theory (DFT) with Generalized Gradient Approximation (GGA) and Tran Blaha modified Becke Johnson (TB-mBJ) method, these alloys were comprehensively analyzed. Structurally, both compounds exhibited stability in the regular Heusler structure, with precise lattice constants and pressure-volume variations. Elastic properties indicated mechanical stability and ductile behavior, with enhanced material strength under elevated pressure. Thermodynamic assessments revealed behavior under extreme conditions, while electronic properties showed half-metallic behavior and semiconducting characteristics. Magnetic moments decreased with pressure, signaling a magnetic transition state in alloys. This theoretical study provides valuable insights into Mn2VSi and Mn2VGe compounds, offering a potential applications in spintronics and magnetic sensors.

EXPLORING THE STRUCTURAL AND ELECTRONIC CHARACTERISTICS OF AMORPHOUS Ge – Te - In MATERIAL THROUGH AB INITIO METHODS

This study employs density functional theory (DFT) and molecular dynamics to meticulously investigate the structural and electronic properties of ternary chalcogenide compounds, specifically (GeTe4 ) 1-x Inx, and (GeTe5 )1-x Inx across a range of compositions ( x = 0, 5, 10, 15, 20 at %). Utilizing the local density approximation within the framework of first-principles calculations, we comprehensively analyze the pair correlation function, static structural factor, electronic density of states, and electronic band gap energy. Our results reveal a notable decrease in the energy band gap of Germanium-Tellurium with the incorporation of Indium atoms. The structural changes observed in the Ge-Te matrix with Indium doping, as evidenced by the changes in the pair correlation function and static structure factor, are consistent with and supportive of the observed decrease in the band gap energy. This phenomenon is primarilyattributed to the significant contribution of Indium atoms to the conduction band edge, offering new insights into the material’s electronic behaviour.

First-principles study on the electronic structure, magnetic and optical properties of strain regulated (V, Mn) co-doped HfS2 monolayer

The impact of biaxial strain on the electronic structure, magnetic and optical properties of double impurity co-doped HfS2 monolayers was investigated using first principles methods. The findings indicate that (V, Mn) co-doped HfS2 monolayer behaves as a dilute magnetic semiconductor both before and after the application of strain, with its magnetism attributed to the hybridization of V:3d, Mn:3d, and S:3p orbitals. In the biaxial strain range of −5% to 5%, the ferromagnetism remains unchanged, the band gap decreases with the increase of compressive strain. In contrast, tensile strain leads to an increase in both the band gap. Finally, our analysis of optical properties reveals that (V, Mn) co-doped HfS2 monolayer enhances infrared light absorption coefficient, compressive strains further enhance this absorption coefficient. These results indicate that (V, Mn) co-doped HfS2 monolayer by strain regulation is an effective strategy for designing dilute magnetic semiconductors and optoelectronic devices.

Tuning the Schottky barrier height in single- and bi-layer graphene-inserted MoS2/metal contacts

First-principle calculations based on density functional theory are employed to investigate the impact of graphene insertion on the electronic properties and Schottky barrier of MoS2/metals (Mg, Al, In, Cu, Ag, Au, Pd, Ti, and Sc) without deteriorating the intrinsic properties of the MoS2 layer. The results reveal that the charge transfer mainly occurs at the interface between the graphene and metal layers, with smaller transfer at the interface between bi-layer garphene or between graphene and MoS2. And the tunneling barrier exists at the interface between graphene and MoS2, which hinders electron injection from graphene to MoS2. Importantly, the Schottky barrier height (ΦSB,N\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\Phi_{{\ ext{SB,N}}}$$\\end{document}) decreases upon graphene insertion into MoS2/metal contacts. Specifically, for single-layer graphene, the ΦSB,N\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\Phi_{{\ ext{SB,N}}}$$\\end{document} of MoS2 contacted with Mg, In, Sc, and Ti are − 0.116 eV, − 0.116 eV, − 0.014 eV, and − 0.116 eV, respectively. Furthermore, with bilayer graphene, when by inserting bi-layer graphene, the negative n-type Schottky barrier of − 0.086 eV, − 0.114 eV, − 0.059 eV, − 0.008 eV, and − 0.0636 eV are observed for MoS2 contacted with the respective metals, respectively. These findings provide a practical guidance for developing and designing high-performance transition metal dichalcogenide nanoelectronic devices.

Influence of the electric field on the electronic structure of flat hexagonal two-dimensional GaN bilayers

Two-dimensional gallium nitride materials have recently garnered significant attention due to their promising optoelectronic properties, chemical stability, and mechanical strength. These attributes make them attractive for various technological applications, particularly optoelectronics, photonics, sensors, and more recently for high-power electronic applications. Our research, using first-principles calculations based on density functional theory (DFT) considering different exchange–correlation functionals, including van der Waals interaction, investigated the electronic properties of a single GaN monolayer and five different stacking configurations of GaN bilayers. The aim is to characterize the electronic properties of 2D-GaN-based materials and explore the impact of external electric fields on the bilayer stacking bandgap. We report the energetically most favorable among the bilayer configurations analyzed. Additionally, we confirmed that it is possible to modulate the energy bandgap both by the type of bilayer stacking and by the effect of the electric field. The ability to tune the energy bandgap (Eg) in 2D-GaN-based materials by adjusting their geometric configuration or applying an external electric field could inspire new applications in various technological fields.

Distributed semiconductor heterojunctions of ZnO–Cu2O for ultraviolet photodetection

Semiconductor heterojunctions, because of their unique optoelectronic properties, have gained significant attention for integrated photonic devices. UV photodetectors based on semiconductor heterojunctions are promising due to their enhanced light absorption, efficient charge separation, and tunable electronic properties, which collectively lead to superior sensitivity and performance. An inter-band transition-based UV photodetector utilizing Cu2O/ZnO distributed heterojunctions has been demonstrated. We propose an integrated photonic structure based on semiconductor heterojunctions in the form of Cu2O–ZnO grating for ultraviolet photodetection yielding a low dark current and improved efficiency. The Cu2O–ZnO grating heterostructure, in comparison to individual planar heterojunction, boosts light-matter interaction enabling higher absorption and enhanced responsivity. The device depicts a responsivity of 0.7A/W at 360nm wavelength. The device exhibits a broadband absorption which remains good over a broad wavelength range from 250nm to 450nm. The reported UV photodetector may find applications in environmental monitoring, UV light communication, biomedical diagnostics, and industrial safety.

Unveiling the DFT perspectives on structural, elastic, electronic, optical and thermal properties of XMn2As2 (X = Ca, Sr)

A comprehensive first-principles investigation of XMn2As2 (X = Ca, Sr) materials using Density Functional Theory (DFT) have used in this study. Variety of physical attributes, including thermal, mechanical, electronic, optical and elastic anisotropic properties are explored. Lattice parameters and crystal structures showed excellent agreement with previous experimental data. The findings reveal that CaMn2As2 and SrMn2As2 exhibit notable elastic anisotropy, and satisfy the Born criteria for mechanical stability. The calculated elastic moduli are consistent with previously published values. The metallic nature of these compounds is demonstrated through band structure and density of states (DOS) analyses. Optical property analyses, including energy loss function, electrical conductivity, reflectivity, dielectric constant, refractive index, and absorption coefficient, highlight the potential of these materials for optoelectronic and photovoltaic applications. Notably, SrMn2As2 displays an exceptionally low minimum thermal conductivity compared to CaMn2As2, indicating its potential as a superior Thermal Barrier Coating (TBC) material.

Tracking dissociation pathways of nitrobenzene via mega-electron-volt ultrafast electron diffraction

Abstract As the simplest nitroaromatic compound, nitrobenzene is an interesting model system to explore the rich photochemistry of nitroaromatic compounds. Previous investigations of nitrobenzene’s photochemical dynamics have probed structural and electronic properties. These investigations paint, at times, a convoluted and sometimes contradictory description of the photochemical landscape. We investigate the ultrafast dynamics of nitrobenzene triggered by photoexcitation at 267 nm for the first time using a structural probe with femtosecond time resolution. Our probe complements previous measurements of nitrobenzene’s electronic structure evolution and aids in determining the photochemical dynamics with less ambiguity. We employ megaelectronvolt ultrafast electron diffraction to follow nitrobenzene’s structural evolution within the first 5 ps after photoexcitation. We observe ground state recovery within 160 ± 60 fs through nonadiabatic dynamics. Based on comparisons of the experimental signal with molecular dynamics simulations, we exclude a significant population of the triplet manifold. Furthermore, we do not observe fragmentation of nitrobenzene within the investigated time window, which indicates that previously observed photofragmenation reactions take place in the vibrationally “hot” ground state on timescales considerably beyond 5 ps.

Investigating novel Mo2X3S (X = Se, Te) materials: probing the influence of chalcogen substitution on electronic, optical, and thermoelectric properties

The excellent thermal performance and adjustable optoelectronic characteristics distinguish the ternary semiconductors. Using the state-of-the-art density functional theory, the optoelectronic, and thermoelectric characteristics of new Mo2X3S (X = Se, Te) ternary chalcogenides are studied. The predicted band gap values with TB-mBJ for Mo2Se3S and Mo2Te3S materials were 1.41 eV and 2.10 eV, respectively. For their possible employment in optoelectronic applications, the components of the complex dielectric function and the vital optical characteristics were calculated and studied. For an increase in the band gap and with the replacement of Se to Te, the peaks in ε 1(ω) shifted to higher energies. Mo2Se3S and Mo2Te3S both show stronger absorption in the UV and visible ranges. Based on the observed peaks in the reflection spectrum, they may used as ultraviolet-reflecting materials with good efficacy. Both Mo2Se3S and Mo2Te3S have positive Seebeck coefficient values, they exhibit p-type conduction. The Mo2Te3S material displays a maximum Seebeck coefficient at about 500 K compared to Mo2Se3S, which leads to a maximum ZT.

The application of chemical similarity measures in an unconventional modeling framework c-RASAR along with dimensionality reduction techniques to a representative hepatotoxicity dataset

With the exponential progress in the field of cheminformatics, the conventional modeling approaches have so far been to employ supervised and unsupervised machine learning (ML) and deep learning models, utilizing the standard molecular descriptors, which represent the structural, physicochemical, and electronic properties of a particular compound. Deviating from the conventional approach, in this investigation, we have employed the classification Read-Across Structure-Activity Relationship (c-RASAR), which involves the amalgamation of the concepts of classification-based quantitative structure-activity relationship (QSAR) and Read-Across to incorporate Read-Across-derived similarity and error-based descriptors into a statistical and machine learning modeling framework. ML models developed from these RASAR descriptors use similarity-based information from the close source neighbors of a particular query compound. We have employed different classification modeling algorithms on the selected QSAR and RASAR descriptors to develop predictive models for efficient prediction of query compounds’ hepatotoxicity. The predictivity of each of these models was evaluated on a large number of test set compounds. The best-performing model was also used to screen a true external data set. The concepts of explainable AI (XAI) coupled with Read-Across were used to interpret the contributions of the RASAR descriptors in the best c-RASAR model and to explain the chemical diversity in the dataset. The application of various unsupervised dimensionality reduction techniques like t-SNE and UMAP and the supervised ARKA framework showed the usefulness of the RASAR descriptors over the selected QSAR descriptors in their ability to group similar compounds, enhancing the modelability of the dataset and efficiently identifying activity cliffs. Furthermore, the activity cliffs were also identified from Read-Across by observing the nature of compounds constituting the nearest neighbors for a particular query compound. On comparing our simple linear c-RASAR model with the previously reported models developed using the same dataset derived from the US FDA Orange Book (https://www.accessdata.fda.gov/scripts/cder/ob/index.cfm), it was observed that our model is simple, reproducible, transferable, and highly predictive. The performance of the LDA c-RASAR model on the true external set supersedes that of the previously reported work. Therefore, the present simple LDA c-RASAR model can efficiently be used to predict the hepatotoxicity of query chemicals.

Chemo-electro-mechanical phase-field simulation of interfacial nanodefects and nanovoids in solid-state batteries

Solid electrolytes encompass various types of nanodefects, including grain boundaries and nanovoids at the Li-metal/solid electrolyte interface, where lithium dendrite penetration has been extensively observed. Despite the importance of ion transport near grain boundaries with different anisotropy and the combinatorial effects with interfacial nanovoids, a comprehensive understanding of these phenomena has remains elusive. Here, we develop a chemo-electro-mechanical phase-field model to elucidate how Li penetrates Li7La3Zr2O12 in the co-presence of grain boundaries and interfacial nanovoids. The investigation unveils a grain-boundary-anisotropy-dependent behavior for Li-ion transport correlated with the presence of interfacial nanovoids. Notably, the Σ1 grain boundary exhibits faster Li dendrite growth, particularly in the co-presence of interfacial nanovoids. The model quantitatively reveals whether interfacial electronic properties dominate Li dendrite morphology and penetration, providing a strategy for designing stable Li/solid electrolyte interfaces. These findings help prioritize approaches for optimally tailoring nanodefects and exploiting synergetic effects at the interface to prevent dendrite formation.

Structural, optical, and electronic properties of cerium doped BaTiO3: Experimental study and DFT calculation

The barium titanate Ba1-xCe2x/3TiO3 (BCTx, x = 0, 1, 2 and 3 %) have been produced using the sol-gel process. The impact of cerium concentration on structure and optical properties was examined using techniques such as X-ray diffraction, infrared spectroscopy, Raman spectroscopy and UV–visible spectroscopy. DFT calculation were carried out on BCTx to obtain an extensive comprehension of the relationship between the structure and electronic properties of BCTx. The findings demonstrate a tetragonal structure for BCT0 and a pseudo-cubic for the doped samples. The UV–visible study indicates a successive reduction in bandgap due to vacancies in the A site, lattice defect formation and local bond distortion. For every sample, the electronic band structure showed a direct band gap. The partial density of states (PDOS) revealed that the valence band was dominated by the 2p orbitals of the O atoms. However, the conduction band was formed by the 3d orbitals of the Ti atom.

Effect of Oriented External Electric Fields on the Electronic Properties of Linear Acenes: A Thermally Assisted Occupation DFT Study.

Recently, oriented external electric fields (OEEFs) have earned much attention due to the possibility of tuning the properties of electronic systems. From a theoretical perspective, one can resort to electronic structure calculations to understand how the direction and strength of OEEFs affect the properties of electronic systems. However, for multi-reference (MR) systems, calculations employing the popular Kohn-Sham density functional theory with the traditional semilocal and hybrid exchange-correlation energy functionals can yield erroneous results. Owing to its decent compromise between accuracy and efficiency for MR systems at the nanoscale (i.e., MR nanosystems), in this study, thermally assisted occupation density functional theory (TAO-DFT) is adopted to explore the electronic properties of n-acenes (n = 2-10), containing n linearly fused benzene rings, in OEEFs, where the OEEFs of various electric field strengths are applied along the long axes of n-acenes. According to our TAO-DFT calculations, the ground states of n-acenes in OEEFs are singlets for all the cases examined. The effect of OEEFs is shown to be significant on the vertical ionization potentials and vertical electron affinities of ground-state n-acenes with odd-number fused benzene rings. Moreover, the MR character of ground-state n-acenes in OEEFs increases with the increase in the acene length and/or the electric field strength.

Electronic and magnetic properties of Janus ZrSSe monolayer doped with V impurity and VX3(X = C, N, O, and F) clusters

In this work, doping with V impurity and VX3 (X = C, N, O, and F) clusters is proposed to modify the electronic and magnetic properties of Janus ZrSSe monolayer. Pristine ZrSSe monolayer is an indirect-gap semiconductor two-dimensional (2D) material with energy gap of 0.73 eV. This value is reduced to 0.13 eV under effects of single Zr vacancy, which corresponds to the reduction of the order of 82.19%. V impurity magnetizes significantly ZrSSe monolayer, inducing feature-rich magnetic semiconductor nature. Herein, the magnetism with a total magnetic moment of 1.00 μ B is produced mainly by V-3d orbital. Investigations indicate that the antiferromagnetic state with zero total magnetic moment is stable when V impurities are located close to each other. Further separating impurities causes the antiferromagnetic-to-ferromagnetic state transition, such that a total magnetic moment of 2.00 μ B is obtained. ZrSSe monolayer is metallized by doping with VC3, VN3 and VF3 clusters. In the first two cases, the non-magnetic nature is preserved. Meanwhile, significant magnetization with a total magnetic moment of 3.00 μ B is achieved by VF3 cluster substitution. Similarly, VO3 cluster induces significant magnetic properties in ZrSSe monolayer with a total magnetic moment of 1.00 μ B , which are originated mainly from the antiparallel spin orientation between V atom and Se atoms closest to the doping sites. Herein, VO3 cluster substitution in ZrSSe monolayer makes new magnetic semiconductor 2D material. The Bader charge analysis indicates that all four clusters attract charge from the host monolayer. Our work may introduce efficient approaches to modify the ZrSSe monolayer electronic and magnetic properties towards spintronic and optoelectronics applications.

Advancing thermoelectric potential: strontium telluride under compression strain analyzed with HSE hybrid functional and Wannier interpolation

In the present era, the energy sector is undergoing an intense transformation, which encourages numerous research efforts aimed at reducing and reusing energy waste. One of the main areas of focus is thermoelectric energy, where telluride compounds have attracted researchers due to their remarkable ability to convert thermal energy into electrical energy. We focused this study on finding out how well strontium telluride (SrTe) can be used to generate thermoelectric power by testing it under up to 10% compression strain. We have used advanced computational approaches to increase the accuracy of our results, specifically the HSE hybrid functional with the Wannier interpolation method. This method is primarily employed to analyze electronic properties; however, our research extends its utility to investigate thermoelectric characteristics. Our findings provide accurate predictions for both electronic and thermoelectric properties. The above method has successfully achieved a significant improvement of 58% in the electronic band gap value, resulting in a value of 2.83 eV, which closely matches the experimental results. Furthermore, the Figure of Merit 0.95 is obtained, which is close to the ideal range. Both the band gap value and the thermoelectric figure of merit decrease when the compression strain is increased. These findings emphasize the importance of using SrTe under specific conditions. The findings of this work provide motivation for future researchers to investigate the environmental changes in the thermoelectric potential of SrTe.

The impact of halogens on the structural, electronic, and optical properties of vacancy-ordered double perovskites Rb2SeX6 (X=I, Br, Cl)

Lead-based perovskite materials have become one of the most widely used materials in the field of photovoltaics due to their excellent properties. However, concerns over lead toxicity and the stability of materials have prompted the search for alternative, eco-friendly, and stable perovskite materials. To address this need, our study conducts an in-depth analysis of the electronic and optical properties of the lead-free double perovskite materials Rb2SeX6 (X = Cl, Br, I) using first-principles calculations. The results indicate that Rb2SeX6 perovskites possess an indirect bandgap, with values of 3.26 eV, 2.52 eV and 1.39 eV for Rb2SeCl6/Br6/I6, respectively. Rb2SeI6 has larger dielectric function and superior absorption spectrum across the visible range than the other two materials. Thus, Rb2SeI6 has a promising future as a photoelectric material for solar cells. Rb2SeCl6 and Rb2SeBr6 also have the potential for use in photodetectors, light-emitting diodes and other optoelectronic devices.

1D Lead Bromide Hybrids Directed by Complex Cations: Syntheses, Structures, Optical and Photocatalytic Properties.

This study presents the synthesis, structural characterization, and evaluation of the photocatalytic performance of two novel one-dimensional (1D) lead(II) bromide hybrids, [Co(2,2'-bpy)3][Pb2Br6CH3OH] (1) and [Fe(2,2'-bpy)3][Pb2Br6] (2), synthesized via solvothermal reactions. These compounds incorporate transition metal complex cations as structural directors, contributing to the unique photophysical and photocatalytic properties of the resulting materials. Single-crystal X-ray diffraction analysis reveals that both compounds crystallize in monoclinic space groups with distinct 1D lead bromide chain configurations influenced by the nature of the complex cations. Optical property assessments show band gaps of 3.04 eV and 2.02 eV for compounds 1 and 2, respectively, indicating their potential for visible light absorption. Photocurrent measurements indicate a significantly higher electron-hole separation efficiency in compound 2, correlated with its narrower band gap. Additionally, photocatalytic evaluations demonstrate that while both compounds degrade organic dyes effectively, compound 2 also exhibits notable hydrogen evolution activity under visible light, a property not observed in 1. These findings highlight the role of metal complex cations in tuning the electronic and structural properties of lead(II) bromide hybrids, enhancing their applicability in photocatalytic and optoelectronic devices.

A comparative DFT study on NO2 adsorption and sensing activities of pristine, reduced and Pr3+-doped CeO2 (110) surface

Surface site activation enhances the sensing properties of the CeO2 (110) surface. Herein, the adsorption of nitrogen dioxide (NO2) on pristine and modified CeO2 (110) surfaces has been studied in detail using quantum chemical calculation. The introduction of the single praseodymium atom on the CeO2 surface reduces its band gap from 1.93 to 0.53 eV, which in turn enhances the adsorption energy from -0.58 (pristine) to -1.34 eV (doped) and also prolongs the desorption time, indicating stronger adsorption ability. The density of states (DOS) and projected density of states (PDOS) analyses reveal that Pr doping modifies the electronic properties of the CeO2 (110) surface which improves NO2 sensitivity. Further, it is also observed that 0.57 eV increase in the work function for NO₂ adsorption on Pr doped CeO2 surface, indicating stronger interaction compared to the pristine CeO2. In contrast, reduced CeO2 surfaces do not exhibit any significant change in sensing properties. Thus, it is understood that Pr-doped CeO2 (Pr/CeO2) surfaces exhibit better stability and sensitivity towards NO2 adsorption compared to pristine and reduced surfaces. Therefore, this study provides insight into the rational design of advanced gas sensing materials based on modified CeO2 (110) surfaces, contributing to the development of an efficient air quality monitoring system.

Combined effect of strain and intrinsic spin–orbit coupling on band gap engineering of GNRs: a first-principles study

By employing first-principles calculations, we theoretically investigate the impact of uniaxial strain and intrinsic spin-orbit coupling (SOC) on the electronic properties of zigzag and armchair edge hydrogen (H)-passivated graphene nanoribbons (GNRs). We find that band structure and density of states of 4-zigzag graphene nanoribbon (ZGNR) and 15-armchair graphene nanoribbon (AGNR) are highly sensitive to the combined effect of strain and intrinsic SOC. In the case of H-passivated 4-ZGNR, SOC with a strain>10% increases the energy band by increasing spin-polarized states at the opposite edges. In contrast to 4-ZGNR, the oscillatory behavior of band gap of H-passivated 15-AGNR is preserved in the presence of strain and SOC. Moreover, for both types of GNRs (zigzag and armchair), the presence of strain and intrinsic SOC preserve spin symmetry.