Additive Electronic Noise Research Articles

A simulation study to evaluate the effect of 2D antiscatter grid primary transmission on flat panel detector based CBCT image quality

Abstact Purpose. Two-dimensional antiscatter grids’ (2D-ASGs) septal shadows and their impact on primary transmission play a critical role in cone-beam computed tomography (CBCT) image noise and artifact characteristics. Therefore, a numerical simulation platform was developed to evaluate the effect of 2D-ASG’s primary transmission on image quality, as a function of grid geometry and CBCT system properties. Methods. To study the effect of 2D-ASG’s septal shadows on primary transmission and CBCT image quality, two new methods were introduced; one to simulate projection signal gradients in septal shadows, and the other to simulate septal shadow variations due to gantry flex. Signal gradients in septal shadows were simulated by generating a system point spread function that was directly extracted from projection images of 2D-ASG prototypes in experiments. Variations in septal shadows due to gantry flex were simulated by generating oversampled shadow profiles extracted from experiments. Subsequently, the effect of 2D-ASG’s septal shadows on primary transmission and image quality was evaluated. Results. For an apparent septal thickness of 0.15 mm, the primary transmission of 2D-ASG varied between 72%–90% for grid pitches 1–3 mm. In low-contrast phantoms, the effect of 2D-ASG’s radiopaque footprint on information loss was subtle. At high spatial frequencies, information loss manifested itself as undersampling artifacts, however, its impact on image quality is subtle when compared to quantum noise. Effects of additive electronic noise and gantry flex induced ring artifacts on image quality varied as a function of grid pitch and septal thickness. Such artifacts were substantially less in lower resolution images. Conclusion. The proposed simulation platform allowed successful evaluation of CBCT image quality variations as a function of 2D-ASG primary transmission properties and CBCT system characteristics. This platform can be potentially used for optimizing 2D-ASG design properties based on the imaging task and properties of the CBCT system.

Minimization of image lag in polycrystalline mercuric iodide converters through incorporation of Frisch grid structures for digital breast tomosynthesis

Objective. Polycrystalline mercuric iodide photoconductive converters fabricated using particle-in-binder techniques (PIB HgI2) provide significantly more detected charge per x-ray interaction than from a-Se and CsI:Tl converters commonly used with active matrix flat-panel imagers (AMFPIs). This enhanced sensitivity makes PIB HgI2 an interesting candidate for applications involving low x-ray exposures—since the relatively high levels of additive electronic noise exhibited by AMFPIs incorporating a-Se and CsI:Tl reduce detective quantum efficiency (DQE) performance under such conditions. A theoretical study is reported on an approach for addressing a major challenge impeding practical use of PIB HgI2 converters—the high lag exhibited by the material (over 10%) which would lead to undesirable image artifacts in applications involving acquisition of consecutive images such as digital breast tomosynthesis. Approach. Charge transport modeling accounting for the trapping and release of holes (thought to be the primary contributor to lag) was used to examine signal properties, including lag, of pillar-supported Frisch grids embedded in the photoconductor for 100 μm pitch AMFPI pixels. Performance was examined as a function of electrode voltage, grid pitch (center-to-center distance between neighboring grid wires) and the ratio of grid wire width to grid pitch. Main results. Optimum grid designs maximizing suppression of signal generated by hole transport, without significantly affecting the total signal due to electron and hole transport, were identified and MTF was determined. For the most favorable designs, additional modeling was used to determine DQE. The results indicate that, through judicious choice of grid design and operational conditions, first frame lag can be significantly reduced to below 1%—less than the low levels exhibited by a-Se. DQE performance is shown to be largely maintained as exposure decreases—which should help to maintain good image quality. Significance. Substantial reduction of lag in PIB HgI2 converters via incorporation of Frisch grids has been demonstrated through modeling.

Theoretical investigation of the signal performance of HgI2 x-ray converters incorporating a Frisch grid structure at mammographic energies

Active matrix, flat-panel imagers (AMFPIs) suffer from decreased detective quantum efficiency under conditions of low dose per image frame (such as for digital breast tomosynthesis, fluoroscopy and cone-beam CT) due to low signal compared to the additive electronic noise. One way to address this challenge is to introduce a high-gain x-ray converter called particle-in-binder mercuric iodide (PIB HgI2) which exhibits 3–10 times higher x-ray sensitivity compared to that of a-Se and CsI:Tl converters employed in commercial AMFPI systems. However, a remaining challenge for practical implementation of PIB HgI2 is the high level of image lag, which is believed to largely originate from the trapping of holes. Towards addressing this challenge, this paper reports a theoretical investigation of the use of a Frisch grid structure embedded in the converter to suppress hole signal—which would be expected to reduce image lag. The grid acts as a third electrode sandwiched between a continuous top electrode and pixelated bottom electrodes having a 100 μm pitch. Signal properties of such a detector are investigated as a function of VDR (the ratio of the voltage difference between the electrodes in the region below the grid to that above the grid), grid pitch (the center-to-center distance between two neighboring grid wires) and R GRID (the ratio of grid wire width to grid pitch) for mammographic x-ray energies. The results show that smaller grid pitch suppresses hole signal to a higher degree (up to ∼96%) while a larger gap between grid wires and higher VDR provide minimally impeded electron transport. Examination of the tradeoff between maximizing electron signal and minimizing hole signal indicates that a grid design having a grid pitch of 20 μm with R GRID of 50% and 65% provides hole signal suppression of ∼93% and ∼95% for VDR of 1 and 3, respectively.

Morphological Reconstruction Improves Microvessel Mapping in Super-Resolution Ultrasound.

Generation of super-resolution (SR) ultrasound (US) images, created from the successive localization of individual microbubbles in the circulation, has enabled the visualization of microvascular structure and flow at a level of detail that was not possible previously. Despite rapid progress, tradeoffs between spatial and temporal resolution may challenge the translation of this promising technology to the clinic. To temper these tradeoffs, we propose a method based on morphological image reconstruction. This method can extract from ultrafast contrast-enhanced US (CEUS) images hundreds of microbubble peaks per image (312-by-180 pixels) with intensity values varying by an order of magnitude. Specifically, it offers a fourfold increase in the number of peaks detected per frame, requires on the order of 100 ms for processing, and is robust to additive electronic noise (down to 3.6-dB CNR in CEUS images). By integrating this method to an SR framework, we demonstrate a sixfold improvement in spatial resolution, when compared with CEUS, in imaging chicken embryo microvessels. This method that is computationally efficient and, thus, scalable to large data sets may augment the abilities of SR-US in imaging microvascular structure and function.

Empirical noise performance of prototype active pixel arrays employing polycrystalline silicon thin-film transistors.

In the spirit of overcoming the signal-to-noise limitations of active matrix, flat-panel imagers (AMFPIs) which employ array circuits based on a-Si:H thin-film transistors (TFTs), an empirical investigation of the noise properties of prototype active pixel arrays based on polycrystalline silicon (poly-Si) TFTs is reported. Like a-Si:H, poly-Si supports fabrication of large area, monolithic x-ray imaging arrays and offers good radiation damage resistance, while providing electron and hole mobility orders of magnitude higher. Compared to pixel circuits typically consisting of a single addressing switch in an AMFPI array, the pixel circuit of an active pixel array includes an amplifier that magnifies the imaging signal prior to readout by external acquisition electronics. Also, while readout erases signal stored in the pixels for AMFPI arrays, active pixel arrays allow multiple nondestructive readout, which can be used to reduce noise. The prototype arrays investigated in this paper were developed to explore the effect of variation in amplifier design on noise. A pair of prototype arrays incorporating single-stage and two-stage poly-Si pixel amplifiers were examined. The arrays incorporate various amplifier designs in which dimensions of some of the three (or four) poly-Si TFTs per pixel circuit for the single-stage array, and some of the five poly-Si TFTs for the two-stage array, were varied. The arrays were operated using a recently developed electronic data acquisition system that allows variation of operational conditions such as voltages and timing of control signals. The arrays were operated in the absence of radiation in various correlated multiple sampling modes, with and without the injection of charge directly into the pixel circuits for measurements of in-pixel gain and pixel noise. Pixel noise, referred back to the input of the pixel amplifier, was compared to predictions generated by a sophisticated circuit simulation model. Across the various pixel circuit designs, the median in-pixel gain for the single-stage and two-stage arrays was measured to be ×9.3 and ×25, respectively. These gain levels were sufficient to reduce the contribution of external noise, defined as the electronic additive noise in the absence of noise contributions from circuitry in the pixel and referred back to the input of the pixel amplifier, to less than 340 e. As a result, median pixel noise results as low as ~695 e and 866 e, acquired using eight samples, were observed from the best-performing single-stage and two-stage designs, respectively. While the magnitude of pixel noise predicted by simulation was lower than the measured results, there was generally good agreement between simulation and measurement for the functional dependence of noise on operating voltages, timing, and sampling mode. The single-stage and two-stage arrays examined in this study demonstrated pixel noise well below that typically demonstrated by AMFPIs. Through proper design, it should be possible to maintain the noise levels observed in this study irrespective of the size and pitch of an active pixel array. Further reduction in pixel noise may be possible through more optimized pixel circuit design, faster readout, or improvements in fabrication.

Cascaded systems analysis of a-Se/a-Si and a-InGaZnO TFT passive and active pixel sensors for tomosynthesis

Medical imaging systems like full field digital mammography (FFDM) and digital breast tomosynthesis (DBT) commonly use amorphous selenium (a-Se) based passive pixel sensor (PPS) direct conversion x-ray detectors. On one hand, direct conversion detectors inherently offer better resolution characteristics in terms of a higher modulation transfer function (MTF), in comparison to the indirect CsI:Tl PPS x-ray imager. On the other hand, especially at lower doses, this superior performance of the direct imager is seldom retained in its detective quantum efficiency (DQE) curves.It is well known that a-Se PPS x-ray imagers suffer from high additive electronic noise originating from the from the amorphous silicon (a-Si) thin film transistor (TFT) array that is being used in the current back-plane technology. This degrades the noise power spectrum (NPS) and subsequently the overall DQE. To address this deficiency, we propose to replace the PPS back-plane by active pixel sensor (APS) back-plane technology, which has the potential to reduce the back-plane electronic noise by amplifying the input signal, especially at low doses. The proposed APS is based on amorphous In–Ga–Zn–O (a-IGZO) TFT technology, which can offer high mobility (5–20 cm2 V−1 s−1), low leakage current (<10−13 A) and low flicker noise (Hooge’s parameter αH ~ 1.5 10−3), leading to better imager noise performance.To test our hypothesis, we used linear cascaded systems analysis to model the imaging performance (MTF, NPS and DQE) of the PPS and APS a-Se direct imagers. This model was first validated using experimentally measured data obtained for a 85 µm pixel pitch a-Se/a-Si TFT PPS imager. Using this model, we analyzed the noise performance of the direct a-Se and indirect CsI:Tl x-ray a-IGZO APS imagers at different dose and electronic noise levels. Obtained results clearly showed that lowering back-plane electronic noise can significantly improve the performance of the a-Se/a-IGZO TFT APS imager. Our simulated results showed that a higher DQE at lower radiation doses (maximum DQE of 0.6 can be achieved at an exposure level of 1 µGy) can be achieved with the a-Se detector, thereby making this combination a promising candidate for low dose applications like DBT.

Theoretical investigation of the noise performance of active pixel imaging arrays based on polycrystalline silicon thin film transistors.

Active matrix flat-panel imagers, which typically incorporate a pixelated array with one a-Si:H thin-film transistor (TFT) per pixel, have become ubiquitous by virtue of many advantages, including large monolithic construction, radiation tolerance, and high DQE. However, at low exposures such as those encountered in fluoroscopy, digital breast tomosynthesis and breast computed tomography, DQE is degraded due to the modest average signal generated per interacting x-ray relative to electronic additive noise levels of ~1000e, or greater. A promising strategy for overcoming this limitation is to introduce an amplifier into each pixel, referred to as the active pixel (AP) concept. Such circuits provide in-pixel amplification prior to readout as well as facilitate correlated multiple sampling, enhancing signal-to-noise and restoring DQE at low exposures. In this study, a methodology for theoretically investigating the signal and noise performance of imaging array designs is introduced and applied to the case of AP circuits based on low-temperature polycrystalline silicon (poly-Si), a semiconductor suited to manufacture of large area, radiation tolerant arrays. Computer simulations employing an analog circuit simulator and performed in the temporal domain were used to investigate signal characteristics and major sources of electronic additive noise for various pixel amplifier designs. The noise sources include photodiode shot noise and resistor thermal noise, as well as TFT thermal and flicker noise. TFT signal behavior and flicker noise were parameterized from fits to measurements performed on individual poly-Si test TFTs. The performance of three single-stage and three two-stage pixel amplifier designs were investigated under conditions relevant to fluoroscopy. The study assumes a 20×20cm2 , 150μm pitch array operated at 30fps and coupled to a CsI:Tl x-ray converter. Noise simulations were performed as a function of operating conditions, including sampling mode, of the designs. The total electronic additive noise included noise contributions from each circuit component. The total noise results were found to exhibit a strong dependence on circuit design and operating conditions, with TFT flicker noise generally found to be the dominant noise contributor. For the single-stage designs, significantly increasing the size of the source-follower TFT substantially reduced flicker noise - with the lowest total noise found to be ~574e [rms]. For the two-stage designs, in addition to tuning TFT sizes and introducing a low-pass filter, replacing a p-type TFT with a resistor (under the assumption in the study that resistors make no flicker noise contribution) resulted in significant noise reduction - with the lowest total noise found to be ~336e [rms]. A methodology based on circuit simulations which facilitates comprehensive explorations of signal and noise characteristics has been developed and applied to the case of poly-Si AP arrays. The encouraging results suggest that the electronic additive noise of such devices can be substantially reduced through judicious circuit design, signal amplification, and multiple sampling. This methodology could be extended to explore the noise performance of arrays employing other pixel circuitry such as that for photon counting as well as other semiconductor materials such as a-Si:H and a-IGZO.

Cascaded-systems analysis of sandwich x-ray detectors

Active sandwich-like multilayer detectors have been developed, and their potential for motion-artifact-free dual-energy x-ray imaging at a single exposure has been demonstrated in the material decomposition context. Since the sandwich detector uses the x-ray beam transmittance through the front layer, direct x-ray interaction within photodiodes in the front layer is unavoidable, and which can increase noise in the front detector images. Similar direct x-ray interaction can also occur in the rear detector layer. To obtain a better contrast performance, an additional filter layer can be placed between the two detector layers. However, this filter layer can increase adversely noise in images obtained from the rear detector layer by reducing the number of x-ray photons reaching it. A theoretical model, which can describe the signal-to-noise performance of the sandwich detector as functions of various design parameters, has been developed by using a linear cascaded-systems theory. From the cascaded-systems analysis, the direct x-ray interaction increases noise at the high spatial frequencies where the number of secondary quanta lessens. The intermediate filter layer enhances the contribution of additive electronic noise in the overall noise performance of the rear detector layer. The detailed cascaded-systems analysis on the x-ray sandwich detectors are reported in comparisons with the measured noise-power spectra and detective quantum efficiencies. The developed model will be useful for a better design and practical use of a sandwich detector for single-shot dual-energy imaging.

A framework of modeling detector systems for computed tomography simulations

Ultimate development in computed tomography (CT) technology may be a system that can provide images with excellent lesion conspicuity with the patient dose as low as possible. Imaging simulation tools have been cost-effectively used for these developments and will continue. For a more accurate and realistic imaging simulation, the signal and noise propagation through a CT detector system has been modeled in this study using the cascaded linear-systems theory. The simulation results are validated in comparisons with the measured results using a laboratory flat-panel micro-CT system. Although the image noise obtained from the simulations at higher exposures is slightly smaller than that obtained from the measurements, the difference between them is reasonably acceptable. According to the simulation results for various exposure levels and additive electronic noise levels, x-ray quantum noise is more dominant than the additive electronic noise. The framework of modeling a CT detector system suggested in this study will be helpful for the development of an accurate and realistic projection simulation model.

Source-Manipulating Wavelength-Dependent Continuous-Variable Quantum Key Distribution with Heterodyne Detectors

The intensities of signal and local oscillator (LO) can be elegantly manipulated for the noise-based quantum system while manipulating the wavelength-dependent modulation in source to increase the performance of the continuous-variable key distribution in terms of the secret key rate and maximal transmission distance. The source-based additional noises can be tuned and stabilized to the suitable values to eliminate the effect of the LO fluctuations and defeat the potential attacks in imperfect quantum channels. It is firmly proved that the secret key rate can be manipulated in source over imperfect channels by the intensities of signal and LO with different wavelengths, which have an effect on the optimal signal-to-noise ratio of the heterodyne detectors resulting from the detection efficiency and the additional electronic noise as well. Simulation results show that there is a nice balance between the secret key rate and the maximum transmission distance.

A Fully Analog High Performances Automatic System for Phase Measurement of Electrical and Optical Signals

In this paper, we present a high performance, automatic fully analog phase-to-voltage converter (PVC) circuit for phase shift measurements of periodic waveforms and repeated pulsed signals with zero and nonzero mean values. The PVC operation is fully automatic because an internal closed feedback loop guarantees the self-phase alignment (self-locking) between the reference and input signals. The system has been tested by measuring the phase shifts between the electrical signals generated by digital waveform generators and by photodiodes. The PVC output voltage dynamic range is ±10 V, independently from the phase-shift full-scales equal to ±10°, ±1°, and ±0.1°. The increase of the PVC sensitivity, expressed in volts/degree, which can be easily set to about 1, 10, and 100 V/°, is achieved without any amplification of the signal so avoiding the increasing and/or introduction of additional electronic noise to the measurements. As a consequence, for the smallest phase-shift full-scale equal to ±0.1°, the proposed PVC circuit is capable to achieve phase resolutions in the order of 0.0001°, a value one order of magnitude better than that one of commercial lock-in amplifiers. In the case of optical applications, the PVC is able to detect laser power variations with sensitivity values settable to about 6, 60, and 600 V/ $\mu \!$ W so achieving the best resolution of 16 pW.

Cascaded systems analysis of photon counting detectors.

Photon counting detectors (PCDs) are an emerging technology with applications in spectral and low-dose radiographic and tomographic imaging. This paper develops an analytical model of PCD imaging performance, including the system gain, modulation transfer function (MTF), noise-power spectrum (NPS), and detective quantum efficiency (DQE). A cascaded systems analysis model describing the propagation of quanta through the imaging chain was developed. The model was validated in comparison to the physical performance of a silicon-strip PCD implemented on an experimental imaging bench. The signal response, MTF, and NPS were measured and compared to theory as a function of exposure conditions (70 kVp, 1-7 mA), detector threshold, and readout mode (i.e., the option for coincidence detection). The model sheds new light on the dependence of spatial resolution, charge sharing, and additive noise effects on threshold selection and was used to investigate the factors governing PCD performance, including the fundamental advantages and limitations of PCDs in comparison to energy-integrating detectors (EIDs) in the linear regime for which pulse pileup can be ignored. The detector exhibited highly linear mean signal response across the system operating range and agreed well with theoretical prediction, as did the system MTF and NPS. The DQE analyzed as a function of kilovolt (peak), exposure, detector threshold, and readout mode revealed important considerations for system optimization. The model also demonstrated the important implications of false counts from both additive electronic noise and charge sharing and highlighted the system design and operational parameters that most affect detector performance in the presence of such factors: for example, increasing the detector threshold from 0 to 100 (arbitrary units of pulse height threshold roughly equivalent to 0.5 and 6 keV energy threshold, respectively), increased the f50 (spatial-frequency at which the MTF falls to a value of 0.50) by ∼30% with corresponding improvement in DQE. The range in exposure and additive noise for which PCDs yield intrinsically higher DQE was quantified, showing performance advantages under conditions of very low-dose, high additive noise, and high fidelity rejection of coincident photons. The model for PCD signal and noise performance agreed with measurements of detector signal, MTF, and NPS and provided a useful basis for understanding complex dependencies in PCD imaging performance and the potential advantages (and disadvantages) in comparison to EIDs as well as an important guide to task-based optimization in developing new PCD imaging systems.

The detective quantum efficiency of photon‐counting x‐ray detectors using cascaded‐systems analyses

Single-photon counting (SPC) x-ray imaging has the potential to improve image quality and enable new advanced energy-dependent methods. The purpose of this study is to extend cascaded-systems analyses (CSA) to the description of image quality and the detective quantum efficiency (DQE) of SPC systems. Point-process theory is used to develop a method of propagating the mean signal and Wiener noise-power spectrum through a thresholding stage (required to identify x-ray interaction events). The new transfer relationships are used to describe the zero-frequency DQE of a hypothetical SPC detector including the effects of stochastic conversion of incident photons to secondary quanta, secondary quantum sinks, additive noise, and threshold level. Theoretical results are compared with Monte Carlo calculations assuming the same detector model. Under certain conditions, the CSA approach can be applied to SPC systems with the additional requirement of propagating the probability density function describing the total number of image-forming quanta through each stage of a cascaded model. Theoretical results including DQE show excellent agreement with Monte Carlo calculations under all conditions considered. Application of the CSA method shows that false counts due to additive electronic noise results in both a nonlinear image signal and increased image noise. There is a window of allowable threshold values to achieve a high DQE that depends on conversion gain, secondary quantum sinks, and additive noise.

低線量領域におけるDigital Radiographyの物理的画質特性の検討

We measured physical image properties of a flat panel detector (FPD) system and a computed radiography (CR) system, targeting to a low dose range (reference dose: 2.58×10(-7) C/kg: to 1/20 dose). Input-output properties, pre-sampled modulation transfer functions (pre-sampled MTFs), and normalized noise power spectra for an FPD system equipped with a CsI scintillator (FPDcsi) and a CR system with an imaging plate coated with storage phosphor (CR) were measured at the low dose range for radiation quality of RQA3 (≍50 skV) and RQA5 (≍70 kV), and detective quantum efficiencies (DQEs) were calculated. In addition, in order to validate the DQE results, component fractions of Poisson and multiplicative and additive noise were analyzed using relative standard deviation analysis. The DQE values of FPDcsi were decreased with dose decrease, and contrarily to these, those of CR were increased. At the 1/10 and 1/20 doses for RQA3, the DQEs of FPDcsi and CR became almost the same. From the results of RSD analysis, it was proved that the main cause of DQE deterioration on FPDcsi are non-negligible additive (electronic) noise, and the DQE improvement on CR was caused by both of significant multiplicative (structure) noise and very low electronic noise. The DQE results were validated by comparing burger phantom images of each dose and radiation quality.

SU‐D‐301‐01: Performance Limits of Large Area Poly‐Si X‐Ray Imagers Employing In‐Pixel Amplification

Purpose: Active matrix flat‐panel imagers (AMFPIs) — based on amorphous silicon thin‐film transistors (TFTs) — have been developed for a wide variety of x‐ray imaging applications at diagnostic energies. However, under conditions of low exposure or small pixel sizes, the additive electronic noise associated with readout of the pixel signal of these imagers leads to relatively low levels of signal‐to‐noise ratio — resulting in significant loss of detective quantum efficiency (DQE) and image quality. An increasingly promising approach for overcoming such limitations involves the incorporation of in‐pixel amplification circuits, referred to as active pixel (AP) architectures, based on low‐temperature polycrystalline silicon (poly‐ Si) TFTs. Methods: Theoretical performance limits for additive noise and DQE for large area imagers employing various AP designs have been explored. The methodology involves SPICE simulations of pixel circuits in an array environment employing realistic inputs for signal, as well as noise derived from individual poly‐Si TFT test devices. Pixel circuit noise performance derived from these simulations, along with other imaging parameters, are input to cascaded systems models for calculations of the corresponding DQE performance. Results: For large area imagers employing architectures comprising one‐ and two‐stage in‐pixel amplification, the calculations suggest that the effect of additive noise can be significantly diminished, leading to substantial improvement in DQE compared to that of conventional AMFPIs, especially at the low exposures associated with fluoroscopy. Such improved performance is largely maintained even for more sophisticated pixel designs incorporating additional features such as higher frame rate and selectable amplification gain. Conclusions: Active pixel imagers based on poly‐Si TFTs offer a potential alternative to conventional AMFPIs for overcoming the decline of DQE at low exposures in fluoroscopy. The combination of detailed circuit simulations and cascaded systems modeling provides a powerful tool for guiding the development of future generations of ever more sophisticated imagers.Work Supported by NIH grant R01‐EB000558

Transmitter and receiver methods for improving asymmetrically-clipped optical OFDM

This paper introduces a new constellation mapping scheme for asymmetrically-clipped optical OFDM (ACO-OFDM) that puts more bits on the low-frequency subcarriers. The lowpass nature of the wireless optical channel motivates the use of this generic bit-loading scheme. This scheme has no knowledge of the channel at the receiver; it performs significantly better than the traditional constant constellation mapping on all subcarriers in a variety of channels. The average bit-error rate (BER) curves for the new modulation scheme have up to a 5 dB improvement for signal-to-noise ratios (SNRs) where the BER is in the order of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> . In addition to the generic low-frequency bit-loading, this paper also proposes clipping the ACO-OFDM signal at the receiver to mitigate the additive electronic noise.

An investigation of signal performance enhancements achieved through innovative pixel design across several generations of indirect detection, active matrix, flat‐panel arrays

Active matrix flat-panel imager (AMFPI) technology is being employed for an increasing variety of imaging applications. An important element in the adoption of this technology has been significant ongoing improvements in optical signal collection achieved through innovations in indirect detection array pixel design. Such improvements have a particularly beneficial effect on performance in applications involving low exposures and/or high spatial frequencies, where detective quantum efficiency is strongly reduced due to the relatively high level of additive electronic noise compared to signal levels of AMFPI devices. In this article, an examination of various signal properties, as determined through measurements and calculations related to novel array designs, is reported in the context of the evolution of AMFPI pixel design. For these studies, dark, optical, and radiation signal measurements were performed on prototype imagers incorporating a variety of increasingly sophisticated array designs, with pixel pitches ranging from 75 to 127 microm. For each design, detailed measurements of fundamental pixel-level properties conducted under radiographic and fluoroscopic operating conditions are reported and the results are compared. A series of 127 microm pitch arrays employing discrete photodiodes culminated in a novel design providing an optical fill factor of approximately 80% (thereby assuring improved x-ray sensitivity), and demonstrating low dark current, very low charge trapping and charge release, and a large range of linear signal response. In two of the designs having 75 and 90 microm pitches, a novel continuous photodiode structure was found to provide fill factors that approach the theoretical maximum of 100%. Both sets of novel designs achieved large fill factors by employing architectures in which some, or all of the photodiode structure was elevated above the plane of the pixel addressing transistor. Generally, enhancement of the fill factor in either discrete or continuous photodiode arrays was observed to result in no degradation in MTF due to charge sharing between pixels. While the continuous designs exhibited relatively high levels of charge trapping and release, as well as shorter ranges of linearity, it is possible that these behaviors can be addressed through further refinements to pixel design. Both the continuous and the most recent discrete photodiode designs accommodate more sophisticated pixel circuitry than is present on conventional AMFPIs--such as a pixel clamp circuit, which is demonstrated to limit signal saturation under conditions corresponding to high exposures. It is anticipated that photodiode structures such as the ones reported in this study will enable the development of even more complex pixel circuitry, such as pixel-level amplifiers, that will lead to further significant improvements in imager performance.

Active pixel imagers incorporating pixel-level amplifiers based on polycrystalline-silicon thin-film transistors.

Active matrix, flat-panel imagers (AMFPIs) employing a 2D matrix of a-Si addressing TFTs have become ubiquitous in many x-ray imaging applications due to their numerous advantages. However, under conditions of low exposures and/or high spatial resolution, their signal-to-noise performance is constrained by the modest system gain relative to the electronic additive noise. In this article, a strategy for overcoming this limitation through the incorporation of in-pixel amplification circuits, referred to as active pixel (AP) architectures, using polycrystalline-silicon (poly-Si) TFTs is reported. Compared to a-Si, poly-Si offers substantially higher mobilities, enabling higher TFT currents and the possibility of sophisticated AP designs based on both n- and p-channel TFTs. Three prototype indirect detection arrays employing poly-Si TFTs and a continuous a-Si photodiode structure were characterized. The prototypes consist of an array (PSI-1) that employs a pixel architecture with a single TFT, as well as two arrays (PSI-2 and PSI-3) that employ AP architectures based on three and five TFTs, respectively. While PSI-1 serves as a reference with a design similar to that of conventional AMFPI arrays, PSI-2 and PSI-3 incorporate additional in-pixel amplification circuitry. Compared to PSI-1, results of x-ray sensitivity demonstrate signal gains of approximately 10.7 and 20.9 for PSI-2 and PSI-3, respectively. These values are in reasonable agreement with design expectations, demonstrating that poly-Si AP circuits can be tailored to provide a desired level of signal gain. PSI-2 exhibits the same high levels of charge trapping as those observed for PSI-1 and other conventional arrays employing a continuous photodiode structure. For PSI-3, charge trapping was found to be significantly lower and largely independent of the bias voltage applied across the photodiode. MTF results indicate that the use of a continuous photodiode structure in PSI-1, PSI-2, and PSI-3 results in optical fill factors that are close to unity. In addition, the greater complexity of PSI-2 and PSI-3 pixel circuits, compared to that of PSI-1, has no observable effect on spatial resolution. Both PSI-2 and PSI-3 exhibit high levels of additive noise, resulting in no net improvement in the signal-to-noise performance of these early prototypes compared to conventional AMFPIs. However, faster readout rates, coupled with implementation of multiple sampling protocols allowed by the nondestructive nature of pixel readout, resulted in a significantly lower noise level of approximately 560 e (rms) for PSI-3.

WE-C-304A-08: The Instrumentation Noise Equivalent Exposure (INEE): Including Conversion, Secondary Quantum, Structure and Electronic Noise

Purpose: To provide a quantitative and clinically relevant measure of the instrumentation noise of digital x‐ray imagers, using the Instrumentation Noise Equivalent Exposure (INEE). Method and Materials: The NPS was “decomposed” into constituent elements of primary quantum noise,Poisson excess noise (Swank noise), secondary quantum noise, structure noise and additive electronic noise using a plot of the total measured NPS versus exposure and using known relationships based on a generalized parallel cascade model analysis. The INEE was determined by measuring the exposure at which the total instrumentation noise and primary quantum noise were equivalent. Exposures at the INEE correspond to a drop in DQE of one‐half. To demonstrate the usefulness of this new metric, the spatial‐frequency‐dependent INEE was measured on a clinical (indirect) dynamic flat panel detector(FPD) with a pixel pitch of 194 μm and a 600 μm thick CsI:Tl phosphor.Results: The INEE was measured to be 2.0, 7.1 and 75 μR at 0, 1 and 1.2 cycles/mm, respectively. Above 1.2 cycles/mm the detector was instrumentation‐noise‐limited at all exposures, resulting in a degradation in image quality beyond that dictated by the noise in the incident x‐ray quanta alone. Hence, above 1.2 cycles/mm the DQE was always less than half the maximum value. Conclusions: In this work, all sources of instrumentation noise were incorporated into the INEE formalism, consisting not only of the additive electronic noise, but also including the Poisson excess noise (i.e. noise resulting from the phosphor), secondary quantum noise (i.e. noise resulting from the conversion and transmission of quanta) and structure noise (i.e. noise resulting from variations in the detector sensitivity). The INEE can be used to assess quantum‐noise‐limited operation at all spatial frequencies of interest by characterizing the total instrumentation noise in terms of equivalent detector entrance exposure. (Partial support: NIH grants R01EB008425, R01EB002873, R01NS43924)

Electronic Noise Modeling in Statistical Iterative Reconstruction

We consider electronic noise modeling in tomographic image reconstruction when the measured signal is the sum of a Gaussian distributed electronic noise component and another random variable whose log-likelihood function satisfies a certain linearity condition. Examples of such likelihood functions include the Poisson distribution and an exponential dispersion (ED) model that can approximate the signal statistics in integration mode X-ray detectors. We formulate the image reconstruction problem as a maximum-likelihood estimation problem. Using an expectation-maximization approach, we demonstrate that a reconstruction algorithm can be obtained following a simple substitution rule from the one previously derived without electronic noise considerations. To illustrate the applicability of the substitution rule, we present examples of a fully iterative reconstruction algorithm and a sinogram smoothing algorithm both in transmission CT reconstruction when the measured signal contains additive electronic noise. Our simulation studies show the potential usefulness of accurate electronic noise modeling in low-dose CT applications.