Multi-function passivation of amino acid at the interface of perovskite and electron transport layer for n-i-p perovskite solar cells

The convergence of escalating energy demand and finite fossil fuel reserves has created an urgent, global imperative for sustainable and renewable energy. Perovskite solar cells (PSCs) have quickly become a leading contender in photovoltaics. Their appeal lies in superior optoelectronic properties, high light absorption capabilities, and cost-effective manufacturing, positioning them as a strong alternative to traditional silicon solar cells. However, significant challenges remain, particularly concerning efficiency, long-term stability, and the reproducibility of device performance. This research addresses these issues by focusing on the crucial role of electron transport materials (ETMs). An Ag/rGO/TiO 2 ternary nanocomposite through a simple hydrothermal method, designed to function as a highly effective electron transport layer (ETL) in planar PSCs. When integrated into a PSC and measured under standard AM 1.5G (100 mW/cm²) conditions, the optimized Ag/rGO/TiO 2 ETL delivered a power conversion efficiency (PCE) of 8.72% ± 0.25% (based on an average of N=5 devices). The champion device showed a short-circuit current density (JSC​) of 14.98 mA/cm², an open-circuit voltage (VOC​) of 0.99 V, and a fill factor (FF) of 58.83%. This performance represents a notable improvement over the reference device using pristine TiO₂, which achieved a PCE of 6.56% ± 0.31% (JSC​ = 13.1 mA/cm², VOC​ = 0.95 V, and FF = 52.7%) under identical conditions. This enhancement confirms that the doped materials significantly improve photovoltaic performance by promoting efficient charge transport and suppressing recombination. This work outlines a straightforward and low-cost approach to creating advanced ETMs, which is a vital step toward the commercialization of next-generation perovskite devices.

Ambient processing of perovskite solar cells (PSCs) offers a promising route to scalable and low-cost manufacturing. While substantial progress has been achieved in improving power conversion efficiency (PCE), the hysteresis behavior of ambient-processed devices remains insufficiently understood. This study examines hysteresis in PSCs fabricated in ambient air at 40-65% Relative humidity (RH) using multiple absorber compositions, including MAPbI3, CsFAPbI3, and Cs2AgBiBr6. Severe hysteresis is observed in devices employing planar TiO2 or SnO2 electron transport layers (ETLs), attributed to amplified moisture- and oxygen-induced defect formation in ambient air. To overcome this challenge, ETL architecture is systematically engineered by adjusting planar TiO2 thickness and incorporating mesoscopic TiO2 architecture with controlled thicknesses. An optimized configuration featuring an approximately 140 nm mesoporous layer substantially reduces hysteresis, lowering the hysteresis index (HI) in MAPbI3 PSCs from 0.52 for planar TiO2 to 0.19, enhancing stability while maintaining high PCE. Similar improvements are demonstrated for CsFAPbI3, where the HI decreases from 0.56 for planar TiO2 and 0.47 for planar SnO2 to 0.38, and for Cs2AgBiBr6, where the HI decreases from 0.32 to 0.08. These findings highlight ETL structural engineering as an effective strategy for mitigating hysteresis and enabling reliable ambient-processed PSCs for scalable manufacturing.

CsPbI2Br perovskite solar cells (PSCs) have emerged as a research focus in third-generation photovoltaics due to their optimal optical bandgap (1.8-1.9 eV) and excellent thermal stability derived from lattice compatibility of the cesium ion (Cs+). However, solution-processed CsPbI2Br films are plagued by intrinsic defects arising from nonequilibrium crystallization and lattice distortion caused by ionic radius differences. These issues synergistically induce carrier nonradiative recombination and ion migration, severely restricting device efficiency and stability. To tackle these challenges, we employed the ionic liquid N-butylpyridinium bromide (N-BuPyBr), which comprises a pyridine ring, butyl chain, and Br-, to optimize the crystal structure and modulate energy levels. Specifically, Br- forms strong coordination bonds with Pb2+ to passivate halogen vacancies, while the cation interacts with I- and Pb2+ to suppress defect-mediated ion migration. Additionally, the hydrophobic structure of the cations retards moisture intrusion, thereby enhancing the environmental stability. The synergistic effect of N-BuPyBr alleviates structural stress, reduces lattice distortion, downshifts the conduction band minimum, and enhances energy level alignment with the electron transport layer (ETL). Consequently, the treated PSCs achieved a power conversion efficiency (PCE) of 14.51% and exhibited superior stability under 25% relative humidity (RH) in ambient conditions, maintaining high performance over an extended period.

Achieving uniform crystallization at both the top and buried interfaces of perovskite films is critical for unlocking their full photovoltaic potential, yet has long been hindered by asymmetric crystallization kinetics and interfacial defects. To tackle this challenge, we developed an interfacial molecular engineering strategy that enables in situ formation of a functional passivation layer at the SnO2/perovskite buried interface. This layer, rich in multiple electronegative sites, not only effectively passivates surface defects on the electron transport layer but also profoundly regulates perovskite nucleation and crystal growth. Characterization results confirm that during subsequent exposure to the perovskite precursor solution, the passivation layer remains chemically and structurally intact-neither dissolving nor incorporating into the perovskite lattice-thus preserving its interfacial functionality without compromising the intrinsic optoelectronic properties of the perovskite. Leveraging these advantages, the optimized device attained a power conversion efficiency of 21.7%, representing an approximate 5% improvement compared to the control group. This work presents a simple yet highly effective approach to buried-interface passivation, significantly enhancing device performance and reproducibility.

Wide-bandgap ZnO, SnO2 and TiO2 nanoparticles have been commonly employed as electron transport layers (ETLs) to fabricate quantum dot light-emitting diodes (QLEDs) due to their excellent optoelectronic properties. Conversely, the use of metal sulfide nanoparticles as ETLs in QLEDs remains unreported to date. In this work, we demonstrate, for the first time, the application of bandgap-tunable and mobility-adjustable Zn-doped In2S3 thin films as ETLs in QLEDs. Benefiting from their appropriate electron mobility and high electrical conductivity, these metal sulfide ETLs effectively enhance charge transport efficiency in the devices. Consequently, the red inverted QLEDs based on the 20% Zn-doped In2S3 ETL achieve outstanding optoelectronic performance, with a maximum external quantum efficiency (EQE) of 12.97%, a peak current efficiency of 17.86 cd A-1 and a maximum luminance of 89,100 cd m-2. These results indicate that Zn-doped In2S3 is a promising ETL candidate for high-performance QLEDs and establish a new design concept for developing high-performance QLEDs based on metal sulfide ETLs.

ABSTRACT Hole‐conductor‐free, printable mesoscopic perovskite solar cells with carbon electrodes present a viable strategy for industrial manufacturing of photovoltaics with low cost. However, depositing perovskite absorber within their intricate triple‐layer (TiO 2 /ZrO 2 /carbon) mesoporous scaffold makes it challenging to regulate the crystallization process, leading to limited crystal quality and high defect density of perovskite, resulting in performance loss. Moreover, the adopted TiO 2 electron transport layer (ETL) with insufficient electrical properties and high surface defect density restricts the carrier injection at the ETL/perovskite interface and exacerbates recombination loss. Herein, two sulfonamide additives, including sulfanilamide (SA) and sulfaguanidine (SG), are introduced into the perovskite precursor. Both additives present strong interaction capability with the key components, such as Pb 2+ and formamidinium (FA + ) of the halide perovskite, thus regulating the crystallization processes. Meanwhile, they passivate surface defects and enhance the electrical property of TiO 2 , thus promoting carrier injection at the ETL/perovskite interface. With their concurrent modulation in crystallization and interface, SA and SG improve the device power conversion efficiencies to 19.84% and 21.50% from 18.02%. Meanwhile, the better‐performing SG device retains 90% of its initial PCE after 530 h of maximum power point tracking at 55°C ± 5°C under 1‐sun illumination.

Abstract Among various perovskite materials, the mixed organic–inorganic lead halide perovskite MAPbI x Br 3−x has garnered significant attention as a cell absorber layer. In this study, the SCAPS simulation tool was employed to analyze the device performance of MAPbI x Br 3−x solar cells. Two types of absorber layers, MAPbBr 3 and MAPbI 3 Br, were selected to explore the effects of absorber layer thickness, defect concentrations within the absorber layers, hole transport layer (HTL) types, electron transport layer (ETL) types, and interface defect concentrations on cell efficiency. The results reveal the crucial impacts of band alignment and interface defect density on the performance of solar cells. Specifically, the band gap of MAPbI 2 Br (1.7 eV) is smaller than that of MAPbBr 3 (2.3 eV), enabling the device to generate more charge carriers. Additionally, the electron affinity (3.7 eV) and band structure of MAPbI 2 Br are more conducive to the separation and transport of charge carriers, and the performance of MAPbI 2 Br-based solar cells is significantly more sensitive to defects in the absorber layer than that of MAPbBr 3 -based solar cells. For MAPbI 2 Br perovskite solar cells, the optimal structure is ZnO/MAPbI 2 Br/Cu 2 O, yielding a maximum efficiency of 27.9% with an absorber layer thickness of 1.2 μm and a defect concentration of 10 13 cm −3 , with V OC of 1.50 V, J SC of 21.6 mA·cm −2 , and FF of 0.82. For MAPbBr 3 perovskite solar cells, the optimal structure is ZnO/MAPbBr 3 /Cu 2 O, achieving a maximum efficiency of 13.45% at an absorber layer thickness of 1.2 μm and a defect concentration of 10 13 cm −3 , with V OC of 1.79 V, J SC of 9.13 mA·cm −2 , and FF of 0.82. The study provides valuable insights for the optimization of perovskite solar cells by improving material selection, layer thickness, and defect control, aiming to achieve higher efficiency in solar energy applications.

ABSTRACT Perovskite solar cells (PSCs) experience significant photovoltage losses due to nonradiative recombination, especially in p–i–n devices with Fullerene C 60 as the electron transport layer (ETL), which limits device performance. To tackle this issue, we propose a strategy that synergistically suppresses nonradiative recombination at the perovskite/C 60 interface by employing a 2D heterointerface with a two‐site anchor bridge, which reduces the surface defect density. This process elevates the fermi level and enhances the electric field, facilitating electron extraction at the perovskite/C 60 heterointerface. As a result, nonradiative recombination at this electron‐selective perovskite contact is greatly suppressed. p–i–n PSCs fabricated using this interface engineering approach achieved a power conversion efficiency (PCE) of 26.32% and demonstrated excellent stability under continuous maximum power point tracking, along with an open‐circuit voltage (Voc) of 1.217 V. This broadly applicable and scalable approach further delivers an impressive V oc of up to 1.368 V in wide‐bandgap (1.8 eV) devices. Overall, the strategy offers a viable pathway toward efficient and stable inverted PSCs, demonstrating broad compatibility with diverse perovskite compositions.

Colloidal quantum dot light-emitting diodes (QLEDs) typically rely on ZnO-based electron transport layers (ETLs), which often suffer from excessive electron injection and an undesirable positive aging effect. Herein, we demonstrate a new class of ZnxCd1-xS alloy nanocrystals as bandgap- and mobility-tunable ETLs for inverted QLEDs. By varying the Zn/Cd ratio, the optical bandgap of the ZnxCd1-xS nanocrystals can be continuously tuned from 2.52 to 3.85 eV, enabling precise alignment of the conduction band minimum with the quantum dot emissive layer. Furthermore, an in situ ligand exchange with 3-mercaptopropionic acid (MPA) is employed to replace the long-chain insulating oleylamine ligand, significantly enhancing the film conductivity by nearly 2 orders of magnitude. MPA-treated Zn0.1Cd0.9S-based QLED achieves a maximum external quantum efficiency of 16.4% and a peak luminance of 139,937 cd m-2, representing an ∼93% enhancement over the untreated device. This work establishes composition- and ligand-engineered ZnxCd1-xS alloy nanocrystals as versatile and efficient ETL platforms for next-generation QLEDs.

ABSTRACT Energy losses at perovskite/C 60 interface, stemming from energetic mismatch due to suboptimal interfacial contact, critically restricts the performance and stability of inverted perovskite solar cells (PSCs). Herein, we introduce nitromethyl phenyl sulfone (NMePS) to comprehensively optimize interfacial states, thereby minimizing energy losses of devices. Leveraging the bridging effect, NMePS not only significantly reduces the trap state density in perovskite films, but also yields a superior morphology conducive to subsequent C 60 deposition. More importantly, NMePS provides additional π–π interaction sites and modulates the chemical state of C 60 to promote the uniform dispersion and compact stacking of C 60 electron transport layer (ETL). The resulting perovskite/C 60 interface also enables favorable energy alignment through tailoring the electronic properties, which further optimizes charge transport dynamics. Thus, the inherent interfacial nonradiative recombination is effectively suppressed via interfacial energetic reconstruction, leading to significantly mitigated performance degradation. Consequently, NMePS‐modified devices achieve efficiencies of 26.87% (0.045 cm 2 ) and 25.06% (1.00 cm 2 ), while demonstrating exceptional long‐term stability ( T 90 > 2600 h, 30°C), thermal stability ( T 80 > 500 h, 85°C) and maximum power point tracking (MPPT) stability ( T 90 > 1200 h, 30°C). Encouragingly, the 655.2 cm 2 active‐area solar module with NMePS modification delivers a remarkable efficiency of 19.28%, demonstrating its tremendous potential for up‐scaling.

Energy losses at perovskite/C60 interface, stemming from energetic mismatch due to suboptimal interfacial contact, critically restricts the performance and stability of inverted perovskite solar cells (PSCs). Herein, we introduce nitromethyl phenyl sulfone (NMePS) to comprehensively optimize interfacial states, thereby minimizing energy losses of devices. Leveraging the bridging effect, NMePS not only significantly reduces the trap state density in perovskite films, but also yields a superior morphology conducive to subsequent C60 deposition. More importantly, NMePS provides additional π-π interaction sites and modulates the chemical state of C60 to promote the uniform dispersion and compact stacking of C60 electron transport layer (ETL). The resulting perovskite/C60 interface also enables favorable energy alignment through tailoring the electronic properties, which further optimizes charge transport dynamics. Thus, the inherent interfacial nonradiative recombination is effectively suppressed via interfacial energetic reconstruction, leading to significantly mitigated performance degradation. Consequently, NMePS-modified devices achieve efficiencies of 26.87% (0.045 cm2) and 25.06% (1.00 cm2), while demonstrating exceptional long-term stability (T90 > 2600h, 30°C), thermal stability (T80 > 500h, 85°C) and maximum power point tracking (MPPT) stability (T90 > 1200h, 30°C). Encouragingly, the 655.2 cm2 active-area solar module with NMePS modification delivers a remarkable efficiency of 19.28%, demonstrating its tremendous potential for up-scaling.

High-efficiency tandem solar cells require wide-bandgap (WBG) perovskites as the top absorber, yet such devices often suffer severe nonradiative recombination, voltage losses, and halide segregation. This work demonstrates that carefully controlling the deposition kinetics of the fullerene electron-transport layer (ETL) offers an elegant route to overcome these issues without complex passivation strategies. WBG perovskite solar cells using a FA0 .8Cs0 .2Pb(I0 .8Br0 .2)3 absorber were fabricatedin a p-i-n architecture with C60 ETLs deposited at three different evaporation rates. When the C60 deposition rate was slowed to 0.1 Å s-1, our devices achieve a 20.4% PCE with a relatively low Voc deficit (~0.48 eV) without complex molecular passivation, 2D/3D heterostructures, or multistep surface reconstruction. The improvement originates from suppressed nonradiative recombination and reduced shunt leakage: The slow-deposited C60 film yields a higher open-circuit voltage (~1.17 V), increased fill factor (80%), and reduced saturation current density and trap-state density compared with faster deposition. Photoluminescence, impedance spectroscopy, and transient photovoltage analyses reveal that slower deposition produces a compact and well-ordered C60 layer which minimizes trap-assisted recombination, decreases Urbach energy (16.68 meV), and lowers the ideality factor (n ≈ 1.33). Structural characterizations confirm improved C60 molecular interface and smoother morphology at slow deposition rates. This work provides a simple processing guideline for high-performance WBG perovskite solar cells and offers valuable insights for scalable tandem cell fabrication.

ABSTRACT Precise control of low‐temperature crystallization of SnO 2 is crucial for high‐performance flexible perovskite solar cells (F‐PSCs). Nevertheless, conventional sol‐gel‐derived SnO 2 nanocrystals (NCs) are plagued by low crystallinity and high defect density due to inherent synthesis limitations, which limit charge transport and interfacial stability. Here, we report a pre‐treatment strategy using aqueous KOH as a hydrolysis regulator to direct the crystallization of SnO 2 NCs at 80°C. The in‐situ generated KCl by‐product simultaneously passivates the buried electron transport layer (ETL)/perovskite interface. This dual‐role strategy yields high‐quality K‐SnO 2 NCs with markedly improved crystallinity and particle morphology, leading to a lower charge transport barrier (73.5 mV vs. 126.2 mV) and superior interfacial adhesion. Thereby, we achieve champion power conversion efficiency (PCE) of 26.13% (rigid) and 25.37% (flexible), along with significantly improved device stability (Active area: 0.048 cm 2 ). This study establishes a robust pretreatment protocol for low‐temperature fabrication of highly quality and stable ETLs for F‐PSCs.

The unstable electron transport layer (ETL) and buried interface, resulting from defects and weak adhesive strength, hampers the advancement of regular (n-i-p) perovskite solar cells (PSCs). Here, multisite dipolar molecules, namely 3,5-bis(trifluoromethyl)benzamidine hydrochloride (BTBACl), are employed to manipulate and stabilize SnO2 ETL and buried interface for high-performance n-i-p PSCs. Due to its multiple active sites, BTBA+ can effectively chemically bonded SnO2 nanoparticles and passivate various defects mainly including undercoordinated Pb2+/Sn4+ and I/O vacancies, thereby suppressing agglomeration of SnO2 nanoparticles, homogenizing buried interface and reducing interface non-radiative recombination losses. Benefiting from the incorporation of two strong electron-withdrawing trifluoromethyl groups, the BTBA+ with large dipole moment enables efficient electron transfer and extraction at the buried interface. Ultimately, the BTBACl-modified n-i-p PSCs achieve a champion power conversion efficiency (PCE) of 26.20%, which is among the highest PCEs for air-processed PSCs. The significantly improved ETL and buried interface stabilities are translated into exceptional operational stability, maintaining 90.2% of its initial PCE after maximum power point tracking for 1000 h. This study offers a novel route to simultaneously stabilize ETL and buried interface from the perspective of functional group and dipole engineering, which promotes the development of n-i-p PSCs.

Colloidal HgTe nanocrystals (NCs) offer a versatile, solution-processable platform for infrared optoelectronics, yet their integration into high-performance diodes has long been hindered by surface-trap-limited open-circuit voltage (VOC), high dark currents, and insufficient thermal robustness. Here, we demonstrate that ultrathin CdS shells grown around HgTe cores, combined with an optimized cation-exchange protocol, enable unprecedented passivation of trap states while reducing species interdiffusion and simultaneously improving interfacial band alignment. Implemented in a diode architecture employing SnO2 electron-transport layers and Ag-doped CdTe hole-selective contacts, these HgTe/CdS NCs yield a two orders of magnitude reduction in dark current and a VOC of 420mV; exceeding half the optical bandgap for the first time in HgTe-based NC photodiodes. Operated at room temperature, the devices exhibit detectivities up to 1.5×101 1 Jones and fast response times below 200ns. Leveraging the reduced dark current and improved film homogeneity, we further integrate the photodiodes into a dielectric Bragg cavity to achieve ultranarrow detection linewidths down to 90 cm-1 at 1.55µm. This diode design benefits from a strong field enhancement, while the device absorption limits the linewidth. Our results establish surface-passivated HgTe NCs as a viable route toward compact, narrowband, and thermally stable infrared photodetectors.

The synthesis methods of SnO2 electron transport layer critically determine the performance of the perovskite solar cells (PSCs), as it governs the particle size, crystallinity, dispersibility, and surface chemistry. In this study, we systematically investigated how the pH (acidic, neutral, or alkaline) during the synthesis of SnO2 affects the efficiency and stability of PSCs. The acidic-derived SnO2 (AC-SnO2) features a carboxyl-rich surface that promotes strong hydrogen bonding with FA+ cations but also accelerates iodide (I-) oxidation. In contrast, the alkaline-derived SnO2 (AL-SnO2) contains a high density of oxygen vacancies, which facilitate the decomposition of the perovskite into Pbl2. Notably, the neutral-synthesized SnO2 (N-SnO2) provides optimal interface properties, yielding a champion active-area efficiency of 26.10% for small-area cells (0.09 cm2) and 23.10% for mini-modules (14 cm2). This work highlights the central role of synthesis pH in tailoring interfacial chemistry and achieving high-performance, stable PSCs.

Abstract Perovskite-based tandem solar cells offer a promising route for efficient solar energy conversion across a broad spectrum. In this study, we explore the development of perovskite-based tandem solar cells, focusing on Cs3Bi2I9 and La2NiMnO6 (LNMO) as absorber layers, in conjunction with FTO as the transparent conducting oxide (TCO). Initial investigations utilizing only LNMO and Cs3Bi2I9 with FTO yielded an efficiency of 22.4%, which was subsequently optimized to achieve an efficiency of 31.17 % through the integration of electron transport layers (ETLs) and hole transport layers (HTLs). Notably, the incorporation of titanium dioxide (TiO₂) as the electron transport layer (ETL), in conjunction with various hole transport layers such as poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA), resulted in the highest efficiency. Further investigations into interlayers revealed their significant impact on device performance, with certain combinations enhancing efficiency while others exhibited a decrease. Additionally, suitable back contacts were compared, and the performance of the configured tandem solar cell was analyzed under diverse conditions. This work presents a comprehensive SCAPS-1D simulation study focused on optimizing a fully lead-free tandem solar cell that combines Cs₃Bi₂I₉ and La₂NiMnO₆ absorber layers. The theoretical predictions derived from this study represent the upper efficiency limits achievable under idealized simulation conditions, providing valuable insights and guidance for future experimental design and optimization of sustainable, lead-free perovskite-based tandem solar cell devices. Meticulous simulations using SCAPS-1D affirmed the viability of the Cs3Bi2I9/LNMO-based tandem solar cells, reaching optimal efficiency. This research contributes valuable insights into the optimization of device architecture and interface engineering, paving the way for the development of efficient and cost-effective solar energy harvesting systems.

Abstract This study presents a comprehensive SCAPS-1D simulation of a lead-free double-perovskite solar cell based on 
NaZn₀.₇Ag₀.₃Br₃ as the absorber layer. Various electron transport layers (CdZnS, MZO, Nb₂O₅, and SnS₂) were 
systematically evaluated to optimize device performance. Among the investigated configurations, the 
FTO/SnS₂/NaZn₀.₇Ag₀.₃Br₃/CuAlO₂/Pt structure exhibited superior photovoltaic characteristics due to improved 
band alignment and reduced recombination losses. Under ideal radiative-loss-free conditions (B = 0), a maximum 
power conversion efficiency (PCE) of 30.56% was obtained. However, after incorporating a realistic radiative 
recombination coefficient (B = 2.3 × 10⁻⁹ cm³/s), the optimized device achieved a PCE of 29.92%, with minimal 
variation in short-circuit current density and a moderate reduction in open-circuit voltage. The results confirm that 
the proposed lead-free perovskite configuration maintains strong photovoltaic performance under physically 
realistic recombination conditions, highlighting its potential for high-efficiency and environmentally benign solar 
cell applications.

Inkjet printing offers a scalable, material-efficient route for the patterning of optoelectronic devices, but the conventional pixel definition depends on the bank structures and multistep alignment, increasing the process complexity. Here, a single-step, interphase-controlled inkjet printing strategy is reported for the direct fabrication of micro-inlaid inverted organic light-emitting diodes (μ-inlaid IOLED) pixels on zinc oxide (ZnO) electron-transport layers. Chloroform-based inks containing a blend of small-molecule semiconductor solutes are deposited onto poly(4-vinylpyridine) (P4VP) insulating layers, where lateral phase separation drives the localized P4VP removal and site-selective solute inlay processes. Surface energy and Hansen solubility parameter analyses indicate a substantial equilibrium solubility mismatch between chloroform and ZnO. Despite this mismatch, micro-inlay formation is kinetically enabled by transient wetting, evaporation-driven flows, and localized polymer disruption at high-energy oxide interfaces during the droplet impact and drying processes. Micro-Raman spectroscopy confirms spatially confined emissive regions and the exclusion of P4VP from the inlaid sites. By optimizing the P4VP thickness, lithography-free green-emitting μ-inlaid IOLED arrays with a 250 dpi resolution achieve peak external quantum efficiencies in the range of 3.4-3.8%, current efficiencies of up to 14.7 cd/A, and luminance levels of 10,000-16,000 cd/m2. These results identify transient, wetting-controlled solvent-substrate interfacial dynamics at high-energy oxide surfaces as a robust design principle for phase-separation-based patterning. The approach presented here effectively decouples printing performance from equilibrium miscibility, thereby enabling the scalable fabrication of high-resolution IOLEDs.