Special features of the chemical structure of silicon oxides were analyzed by the methods of vibrational and electronic spectroscopy and it was found that cationic (Si-Si) and anionic (O2 and O3) sublattices contain isolated individual Si-CO oscillators, including electron-excited oscillators, and homoatomic bonds. By means of chromatographic and sorption-calorimetric analyses inverse dependence of singlet oxygen specific thermal emission on specific surface area of samples was found that corresponds to volume generation of excited states.