The charge transfer process between substrate molecular and dopant always appears in doped organic semiconductors, so that molecular doping is a common method to improve the electrical properties by combining appropriate complexes of electron acceptor and donor molecules. At the interface of the doped complexes, the amount of charge-transfer based on the charge analysis method could be affected by various factors, including the stacking structure, the HOMOD-LUMOA gaps, the offset defined by the donor ionization potential and the acceptor electron affinity IPD-|EAA|, and the strength of the intermolecular orbital interaction. To better understand the charge transport properties in complex crystals, reasonable mobility values were calculated by combining semi-classical Marcus-Hush theory with molecular dynamics simulation, in which the mobility values were on the same order of magnitude as experimental values. The largest and average room-temperature mobility were 4.59 and 0.21 cm2 V-1 s-1 for TTF-TCNQ based on the anisotropic transport properties and random-walk schemes of the charge diffusion coefficient. The interface of the TTF-TCNQ crystal possesses metallic conducting properties with a predicted resistance of 4.43 kΩ. Charge-transfer complexes exhibit larger mobility and higher conductivity compared to the constituent donor and acceptor molecules.
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