Tuning the surface morphology and phase evolution of spray-pyrolyzed ZnO–RuO2 composite films for enhanced optical and electrical properties

SrTiO 3 is a model electro-ceramic representing the very significant group of perovskite ceramics which display versatile electric properties (ferroelectricity, ionic conductivity, semi-conductivity). The impact of dopants on the properties of SrTiO 3 is comparably well investigated. This study explores the correlation between dopant type, grain growth and electrical properties of acceptor-donor codoped SrTiO 3 . The electric properties of undoped and doped (Fe, Nb, Fe/Nb) SrTiO 3 were investigated using electrochemical impedance spectroscopy (EIS). Space charge potentials Δ Φ and thickness λ MS were evaluated. Cationic segregation profiles at grain boundaries (GBs) were characterized using Scanning Transmission Electron Microscopy (STEM) combined with Energy Dispersive X-ray Spectroscopy (EDS). Grain growth coefficients were evaluated for each sample. Fe segregation reduces grain growth rates (solute drag) and increases GB conductivity. Under certain annealing conditions solute drag transitions to abnormal grain growth. Codoping does not alter bulk conductivity. Nb doping drastically changes electric properties and grain growth kinetics.

Tunable structural composition of spray-pyrolyzed 3d metals-doped ZnO films for improved optical and electrical properties

Retraction notice to “Sn-Co co-substituted SrSnxCoxFe12−2xO19 strontium hexaferrites: Correlation between chemical composition, magnetic and electrical properties” [J. Magn. Magn. Mater. 564(Part 2) (2022) 170207

Low temperature fabrication of manganese ferrite: Ramifications of calcination on its structural, magnetic and electrical properties

Electrical properties and application stability of the effects of La2O3 doping RuO2-CuO based resistive pastes with near-linear positive TCR

Electrical conductivity and nonlinear dielectric properties of graphite-like carbon films at low frequencies

The role of two-stage powders mixing and tungsten element on mechanical and electrical properties of the CuNiFe-xW alloys

Microstructure, mechanical and electrical properties of (AlCrTaTiZr)Nx high-entropy nitride films

Impact of Ga2O3 doping on microstructure and electrical properties of novel ZnO-MnO2-SrCO3-based linear resistors

Influence of Al substitution on the structural, optical, and electrical properties of ZnSnO3 ceramics

High temperature performance of polyimide under accelerated thermal aging: linking chemical modifications to electrical properties

Annealing-induced Oxide–Matrix interactions and their impact on electrical properties of CoCrFeMnNi high-entropy alloy thin films

Doping CZTS (copper-zinc-tin-sulfide) by replacing zinc with cadmium atoms is a crucial process for improving its electrical and optical properties. The primary goal is to modify the bandgap and increase the electrical conductivity of the material to enhance its efficiency in solar cell applications. This substitution induces a phase transition in the crystal structure from kesterite (favorable for zinc) to stannite (stable for cadmium). Experimental results showed that the pure sample (x = 0) was unstable, with a large dispersion in the conductivity measurements. Adding cadmium at a low ratio (x = 0.01225) improved the stability of the measurements while the conductivity decreased to ~10 S/m due to distortion stress in the crystal lattice. Increasing the ratio to x = 0.0269 resulted in a dramatic jump in the conductivity (~56 S/m) which is an indication of the onset of the phase transition. A computer code based on the K-Means algorithm was used to analyze the dispersion of measurements and isolated the most statistically reliable group.

Perylene diimide dianion (PDI2-) is a promising organic semiconductor with exceptional electronic properties, but its application is limited by challenges in controlling the molecular packing and thin film morphology. In this work, we employed molecular dynamics (MD) simulations to investigate the structure and morphology of PDI2- thin films during solvent evaporation. Our simulations captured the dynamic aggregation behaviors and interactions of PDI2- molecules with solvent molecules during thin film formation. The effects of environmental factors, including residual solvent content, temperature, evaporation rate, and thermal annealing, on molecular packing and thin film morphology were considered. The results reveal that residual solvents play a critical role in promoting homogeneous molecular packing and preventing defect formation. Elevated temperatures enhance molecular ordering and thin film stability at an optimal evaporation temperature of 373.15 K, accompanied by an increase in hydrogen bond interactions. Thermal annealing further optimizes molecular packing and strengthens hydrogen bonding networks, thus yielding more stable and ordered thin films. GIWAXS-characterized images also support our simulation results. These findings provide a predictive guideline for optimizing the process parameters of PDI2- thin film fabrication and offer molecular mechanism insights into the dynamic aggregation behaviors of PDI2- molecules, also establishing a molecular structure foundation for investigating the electrical properties of high-performance organic semiconductors.

This study aimed to present a method for measuring the mechanical strength and electrical chargeretention properties of fibers containing nano-sized oxide particles, which have become widely usedin recent years, and to clarify the fundamental physical properties of these fibers. There have beenfew studies measuring the mechanical and electrical properties of composite fibers containing nanosizedoxide particles. Polyester fibers containing SiO2 and ZrO2 nanoparticles were fabricated usingindustrial techniques to clarify the effect of particle introduction on strength. Furthermore, theelectrostatic charge properties of fibers containing these particles, which act as insulators, weremeasured, revealing that mechanical strength and electrical charge retention properties are mutuallyexclusive parameters. Increasing the nanoparticle content decreased mechanical strength, butprolonged the charge half-life and improved electrostatic retention. Furthermore, it was shown thatthis phenomenon can be represented using an equivalent circuit model of a resistor and a capacitor.

Epoxy resin (EP) faces significant limitations in electronic applications due to its short corona resistance lifetime, while nanomaterial modification technology offers new avenues for enhancing its performance. This study synthesized a composite oxide (organic Si-Al-B composite oxide) using phenyl triethoxysilane (PTES), tributyl borate, and aluminum isopropoxide as monomers via a hydrolytic condensation reaction. By adjusting different doping levels, a series of epoxy resin composites (Si-Al-B/EP composites) were prepared. This study aimed to enhance the material's corona resistance while maintaining other electrical properties. The epoxy composite was systematically characterized and evaluated through X-ray photoelectron spectroscopy (XPS), dielectric property testing, breakdown field strength testing, volume resistivity measurement, and corona life testing. Results indicate that the Si-Al-B/EP composite exhibits optimal comprehensive performance when the molar ratio of Si:Al:B is 9:2.5:1 and the doping level is 8 wt %. Compared to pure EP, this composite demonstrates an approximately 13-times higher corona resistance lifetime and a 35% increase in breakdown field strength, while achieving a slight reduction in both dielectric constant and dielectric loss.

Abstract Cable transmission is crucial for long-distance power transfer, connecting regional power grids, and integrating wind farms into the grid, serving as a key element of high-voltage direct current (HVDC) power systems. Nonetheless, during operation, the cross-linked polyethylene (XLPE) insulation layer in cables is frequently subjected to electro-thermal coupled stresses, which significantly impacts the cable's safety and transmission efficiency. This study investigates systematically different types of XLPE samples in terms of their physicochemical and electrical properties. It is found that increasing sample thickness reduces breakdown performance significantly, with a maximum decrease of 64.94%. Increasing temperature also degrades breakdown strength, with a maximum reduction of 25.27%. However, there are certain discrepancies between the experimental data and the calculated results of classical breakdown models regarding the temperature and thickness dependence of breakdown strength. It also finds that XLPE's crystallinity, gel content, and grain size are positively correlated with the breakdown strength. Thus, from the perspective of molecular chain motion, this study establishes a molecular displacement electrical breakdown model for XLPE under electro-thermal coupling fields based on potential barriers and molecular chain displacement mechanisms. Its calculations agree well with experimental data, with error less than 4.17%. Moreover, it can simultaneously simulate how breakdown strength varies with temperature and thickness, breaking the limitation of classical models that only simulate a single variable. It reveals the performance evolution and breakdown mechanism of insulating materials under multi-field coupling, providing the theoretical basis for high-voltage insulation materials design.

Antisite defects, as intrinsic point defects in crystals, have demonstrated significant potential in optimizing the thermoelectric performance of materials, particularly by modulating the carrier concentration. However, they typically degrade carrier mobility due to the strong coupling among thermoelectric parameters. To address this limitation, we propose a dual-antisite defects strategy: by introducing donor-acceptor defect pairs to form electrically neutral configurations, carrier scattering can be significantly reduced due to charge compensation. Meanwhile, the presence of these point defects still maintains strong phonon scattering. This approach minimizes the loss of electrical mobility while effectively suppressing lattice thermal conductivity (κL). Using chalcopyrite CuGaTe2 as a matrix, we incorporated charge-balanced dual-antisite defects (AgGa″ and InCu··) via alloying. This type of electrically neutral dual-antisite defects can maintain carrier mobility while increasing carrier concentration and significantly suppresses κL by enhancing phonon scattering through the interaction between alloy disorder scattering induced by In alloying and nanodomains. Remarkably, in Cu0.7Ag0.3Ga0.6In0.4Te2, a record-high ZT value of 2.03 at 873 K was achieved. This dual-antisite defects strategy provides a new paradigm for defect engineering in thermoelectric materials, enabling the simultaneous optimization of electrical and thermal transport properties and offering a valid pathway toward high-performance thermoelectrics.

Thermal annealing effects on the structural and electrical properties of SiC nanoparticles prepared by pulsed laser ablation in water