Electrical Properties Of Films Research Articles

Impact of in situ heating on the structure, morphology, and electrical and optical properties of RF-sputtered NiO thin films

Impact of <i>in situ</i> heating on the structure, morphology, and electrical and optical properties of RF-sputtered NiO thin films

Spraying-Deposited Transparent p-Type Sn-Doped CuI Film and Its Ultrahigh-Speed Self-Powered Photodetector.

The exploitation of simply processed p-type semiconductors and photodetectors with promising optoelectrical properties remains challenging yet essential for current and future advanced optoelectronic applications. Transparent p-type CuI and Sn-doped CuI (Cu-Sn-I) films and their self-powered photodetectors have been successfully fabricated by the spraying method. It is found that the incorporation of Sn dopants enhances the optical, electrical, and photoelectric properties of CuI thin films as well as their corresponding self-powered heterojunction photodetectors. This improvement of the optoelectrical properties of the Cu-Sn-I film and its photodetector can be attributed to the adjustment of the acceptor defect level and increased hole concentration resulting from Sn doping. The Cu-Sn-I/n-Si photodetector exhibits a responsivity of 10.7 mA/W, a detectivity of 6.79 × 1011 Jones, and a response time of 77 μs/30 μs (0 V bias). The response time exhibits the fastest rise and decay times compared with the other CuI-based self-powered UV photodetectors in recent years, showcasing promising applications in the realm of transparent electronics moving forward. This study also presents an effective strategy for enhancing the electrical properties of p-type semiconductors and devices through effective doping.

Tuning the optical, electrical, and structural properties of Cu-DLC thin films via simultaneous DC-RF unbalanced magnetron sputtering

This study evaluates the deposition of diamond-like carbon (DLC) films with copper impurities on a glass substrate using simultaneous direct current (DC) and radio frequency (RF) magnetron sputtering. The structural, optical, electrical, and mechanical properties, as well as the surface topography of the films, were investigated under various DC power levels using Raman spectroscopy, ellipsometry, UV-VIS, I-V measurements, nanoindentation, AFM, and FESEM. Results indicate that increasing the DC power to the graphite target from 60 to 120 W, while maintaining a constant 10 W of RF power to the copper target, enhances the optical absorption coefficient of the films and increases the optical bandgap from 0.95 eV to 1.55 eV. Concurrently, the refractive index decreases from 1.84 to 1.64. Raman spectra reveal that the G peak position and the ID/IG ratio decrease, suggesting an increase in sp³ bonds relative to sp2 bonds in the film structure. The surface topography shows increased deposition power raises the surface roughness of the films. Optical emission spectroscopy (OES) during deposition indicates that higher DC power reduces the relative intensity of Cu active species, leading to less Cu embedded in the film structure. Additionally, the emission spectrum shows an increase in hydrogen-containing species, suggesting a rise in sp³ C-H bonds compared to sp³ C-C bonds in the film structure.

Exploration of electrical conduction mechanisms via modulating sintering period of La0.67Ca0.33MnO3 films in various phase regions

Perovskite manganese oxide films have garnered significant attention due to their unique and diverse physical properties. In this work, La0.67Ca0.33MnO3 (LCMO) films are prepared on LaAlO3 (00l) substrates using the sol−gel spin coating method with varying sintering period (Ps). By optimizing Ps, improvements were observed in the films’ structure, morphology, ionic valence, and temperature−dependent resistivity. The reduction in Mn−O bond length and the increase in Mn−O−Mn bond angle change the degree of MnO6 distortion, resulting in an increased eg bandwidth. As Ps increased, the LCMO films exhibited better crystalline quality. The improved Mn4+/Mn3+ ratio strengthened the double exchange effect, facilitating the carrier hopping of the eg electrons. Analyses of various electrical conduction mechanisms showed that optimized electron scattering behavior, reduced hopping distance, energy and theoretical Curie temperature collectively enhance the temperature coefficient of resistivity (TCR) of LCMO films under optimal Ps. The TCR of the LCMO films reached a maximum value (31.64 % K−1) at Ps = 18 min. These findings offer valuable insights into the main electrical conduction mechanisms in both metallic and semiconducting phases, providing a deeper understanding of the underlying physical processes and offering experimental guidance for optimizing the electrical transport properties of perovskite films.

Enhancing Low-Temperature Sensor Applications: Synergistic Effects of Ni Doping and SnO2 Interlayer on Spin-Coated ZnO Thin Films on Glass Substrate

This study investigates the effects of Nickel doping and a SnO2 interlayer on the structural, morphological, optical, and electrical properties of ZnO thin films. Undoped and Ni-doped ZnO films were fabricated on glass substrates, with and without an SnO2 interlayer, using the sol-gel spin coating method. The samples—denoted as ZG (undoped ZnO), NZG (Ni-doped ZnO), ZSG (undoped ZnO with SnO2 interlayer), and NZSG (Ni-doped ZnO with SnO2 interlayer)—underwent comprehensive characterization via XRD, AFM, PL, UV-Vis spectroscopy, Hall effect measurements, Hot probe, and Two-point method. XRD analysis confirmed successful Ni incorporation and enhanced ZnO crystallinity, particularly in the presence of the SnO2 interlayer. AFM analysis revealed improved grain distribution and size due to the synergistic effects of Ni doping and the SnO2 interlayer. UV-Vis results indicated significant impacts on transparency and the Urbach energy, with Ni doping alone broadening the bandgap. PL measurements showed that the synergistic effects quenched UV luminescence associated with the glass substrate, enhancing visible luminescence. Chromaticity analysis suggested that ZSG and NZSG samples are suitable for warm blue region applications. Electrical measurements revealed n-type conductivity across all films except NZG, with Ni doping increasing resistivity. Additionally, the ZSG (PTC) sensor exhibited a slightly higher sensitivity (0.3852 Ω/°C) compared to the NZSG sensor (0.3782 Ω/°C), with a similar trend observed in NTC sensors. These findings suggest that Ni-doped ZnO films with SnO2 interlayers could potentially serve as thermistors and RTDs, offering promising applications in temperature sensing and optoelectronics.

Effect of different substrates on the structural, morphological, electrical, and optical properties of β-Ga2O3 thin films deposited by the sol-gel spin coating method

Effect of different substrates on the structural, morphological, electrical, and optical properties of β-Ga2O3 thin films deposited by the sol-gel spin coating method

Structural and electrical characterization of phase evolution in epitaxial Gd2O3 due to anneal temperature for silicon on insulator application

In this work, we understand the post-deposition anneal temperature effects on structural and electrical (leakage current and trap density) properties of epitaxial Gd2O3 film grown on Si (111) substrate using a cost-effective and High-Volume Manufacturing capable radio frequency sputtering method. It is found that the Rapid Thermal Annealing (RTA) at an optimum temperature of 850 °C enhances the crystallinity of the cubic phase in film. However, at higher RTA temperatures (>900 °C to 1050 °C), Si out-diffusion in Gd2O3 film is manifested as the reason for phase evolution towards the amorphous phase. The electrical characterization shows the film's low leakage current density of 100 nA/cm2. Moreover, increased breakdown voltage and field are observed with increasing RTA temperature. The frequency-dependent Capacitance-Voltage analysis shows a parallel shift accompanied by a kink at a lower frequency, indicating the presence of interface traps (Dit) with a range of time constants. After the forming gas annealing, a significant reduction in Dit is observed. The low leakage current density, low Dit and high crystallinity make Gd2O3 a promising candidate as a buried oxide in Silicon on Insulator MOSFETs.

Enhancement of carrier concentration in chemical bath deposited copper sulfide (CuxS) thin film by post-growth annealing treatment

Copper sulfide thin films (CuxS, 1 ≤ x ≤ 2), owing to their unique optical and electrical properties, have attracted enormous attention in recent research. As one of the chalcogenide semiconductors, CuxS is used in several applications such as chemical sensors, photo-absorbing layers, photovoltaics, and lithium-ion batteries. In this study, copper sulfide thin film (CuxS; where 1 ≤ x ≤ 2) has been deposited by the chemical bath deposition method (CBD) at 27 °C with the molar ratio for copper and sulfur as 1:5, respectively. The structural, compositional, morphological, optical, and electrical properties of as-deposited and annealed CuxS thin films are investigated. From XRD plots, the presence of a mixture of two co-existing polycrystalline phases is observed, i. e. covellite phase with CuS stoichiometry and digenite phase with Cu1.8S stoichiometry up to an annealing temperature of 200 °C. At higher annealing temperatures, i.e. at 300 °C and 400 °C, the phase of CuxS thin film gets completely converted to digenite phase with Cu1.8S stoichiometry and chalcocite phase with Cu2S stoichiometry respectively. There is an enhancement in the crystallinity of CuxS thin film with an increase in annealing temperature as confirmed by XRD and Raman results. The optical bandgap of CuxS thin film is found to be decreased from 2.81 eV to 1.66 eV with an increase in the annealing temperature. The CuxS thin films are found to be p-type in nature, and the film annealed at 400 °C possesses the highest carrier concentration as revealed from the Hall effect measurement. This study aims to investigate the improvement of electrical properties of CuxS thin film with the variation in annealing temperature for optoelectronic applications such as photodetector.

The effect of Mn doping on the electrical and magnetic properties of Cr2Te3 thin films

Mn doped Cr2-xMnxTe3 thin films were prepared by molecular beam epitaxy technology. The effect of Mn doping concentration on the structural, morphological, electrical and magnetic performance of Cr2Te3 thin films were detailed analyzed. By varying the beam current of the Mn source, it is found that Mn can be doped into the Cr2Te3 thin film when the Mn source temperature is lower than 700 ℃, while the Mn tends to bind with Te as MnTe crystal for Mn source temperature higher than 700 ℃. Cr2-xMnxTe3 films all exhibt strong ferromagnetism with a Curie temperature of around 175 K. The magnetization of the films decreases with increasing Mn doping concentration. A notable negative magnetoresistance effect is observed with the highest MR ratio about −60 % in the vicinity of the Curie temperature. A clear topological Hall signal was observed in the sample with a Mn source temperature of 700 ℃ at low temperature (2 K). These results imply that the electrical and magnetic properties of Cr2Te3 materials can be effectively controlled by doping to meet the practical needs of different fields.

Dark current in FTO/CZTS interface: a comprehensive comparison of practical Vs theoretical approach using SCAPS-1D

This study investigates the deposition of Cu2ZnSnS4 (CZTS) thin films on fluorine-doped tin oxide (FTO) and soda-lime glass (SLG) substrates using radio frequency (RF) sputtering at varying temperatures. A comprehensive characterization employing multiple analytical techniques was conducted. X-ray diffraction (XRD) analyses confirmed the amorphous nature of CZTS films being deposited up to 200 °C, while higher temperatures promoted increased crystallinity, with the presence of (112) and (220) planes observed at 300 °C and 400 °C. Rietveld refinement using Profex software revealed an increase in crystallite size with deposition temperature for films grown at 300 °C and 400 °C. Optical characterization through UV–vis spectroscopy unveiled a decrease in band gap energy with increasing deposition temperature, while the Urbach energy, associated with defects and imperfections, exhibited an inverse relationship with band gap and temperature. Experimental current–voltage (I-V) measurements using a Keithley source meter showed variations in the ideality factor with deposition temperature. SCAPS-1D simulations were performed to model the FTO/CZTS interface, incorporating experimental parameters. The simulated I-V behavior demonstrated a transition from recombination to diffusion-dominated current above 1.3 V forward bias. Simulations yielded higher ideality factors due to increased contributions from recombination and diffusion currents. Overall, this study provides insights into the growth, structural, optical, and electrical properties of CZTS thin films deposited by RF sputtering, enabling a comprehensive understanding of the FTO/CZTS heterojunction characteristics and their dependence on deposition temperature.

Advancement of Electro-Optical Properties through Changes in the Physicochemical Composition of Hybrid Thin Films by Doping Reduced Graphene Oxide into a Sol-Gel Process Solution.

A hybrid thin film was fabricated by doping graphene oxide into a sol-gel solution containing a mixture of zirconium, bismuth, and indium oxide. The thin film was fabricated using a brush coating process. The graphene oxide doping ratios used were 0, 5, and 15 wt%. During the thin film fabrication process, the produced sol-gel solution generates a contractile force due to the shear stress of the brush bristles, resulting in a microgroove structure. This structure was confirmed through scanning electron microscopy analysis, which revealed the clear presence of rGO. Comparing the electrical properties of a zirconium bismuth indium oxide thin film without graphene oxide doping and a thin film doped with 15 wt% graphene oxide, the electro-optical properties were significantly improved with graphene oxide doping. In general, the threshold voltage decreased by approximately 0.42 V. In addition, bandgap measurements confirmed the improved conductivity characteristics with graphene oxide doping. Since this improvement in electro-optical properties is associated with the reduction process due to graphene oxide doping, X-ray photoelectron spectroscopy analysis was performed to assess the intensity change of each element. Based on these observations, hybrid thin films doped with graphene oxide emerge as promising candidates for next generation thin film.

Low-temperature growth of CuS thin film on flexible substrates for photodetection

Abstract The covellite phase of copper sulfide thin film (CuS), owing to its excellent electronic, optical, and chemical properties, has attracted enormous attention in cutting-edge research. This research work emphasizes a comprehensive study of structural, optical, morphological, and electrical properties of CuS thin film deposited by chemical bath deposition (CBD) technique on flexible polyethylene terephthalate (PET) substrate at different deposition temperatures, i. e. 25 °C, 40 °C, 55 °C, and 70 °C for fabrication of flexible photodetector. XRD and Raman studies depict presence of hexagonal covellite phase (CuS), where as the RMS roughness of CuS thin film increases with a rise in deposition temperature. The optical bandgap of CuS thin film gets reduced with a rise in deposition temperature. The optimized CuS thin film, deposited at 70 °C, has exhibited a homogeneous surface with RMS roughness of 13.72 nm, mobility of 25.09 cm2/Vs, and bandgap of 1.86 eV. The mobility of CuS thin film is found to be increased with the rise in deposition temperature. The flexible CuS photodetector, deposited at 70 °C, has shown better photoresponse characteristics, exhibiting the highest responsivity of 0.18 mA/W, detectivity of 1.39×108 Jones, and sensitivity of 173.25 % upon light illumination. The photocurrent established possesses an outstanding dependence on various intensities of illuminated light. Furthermore, the bending test of flexible CuS photodetectors reveals the absence of any sign of deterioration up to a bending angle of 30°. The CuS thin film-based photodetector device exhibits the optimized photodetector device with reproducibility and steady photoresponse after bending. This suggests that the Al/CuS-PET/Al photodetector device could be used in various wearable optoelectronic device applications.

Amorphous to Polycrystalline Phase Transition of In Situ Annealed Ge Films: Structural, Morphological, Optical, and Electrical Characteristics

AbstractRadio Frequency (RF) sputtered germanium (Ge) thin films were deposited on glass substrate at in situ annealing temperatures of 400, 450, 500, 550, and 600 °C. X‐ray diffraction (XRD) and Raman spectroscopy revealed that the Ge films were initially amorphous but transformed to polycrystalline after annealing at 450 °C. Further annealing up to 600 °C resulted in improved crystallinity. Strain studies of the films using XRD and Raman showed compressive (out‐of‐plane) and tensile (in‐plane) strains, respectively, throughout all the annealing temperatures. The surface morphology of the films was recorded using atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM), which showed grain growth with annealing temperatures. The optical energy gap evaluated from absorption spectra for crystalline films decreased with annealing temperature, indicating improvement in crystallinity of films. The resistivity of the films deduced using current‐voltage measurements was found to decrease with annealing temperature, which can be attributed to enhancement in grain size. This study establishes a correlation between strain, grain size, optical energy gap, and electrical resistivity with temperature for Ge films deposited on glass substrates. Thus, the present study provides insights into variation in physical and electrical properties of films with in situ annealing temperature for their applicability in optoelectronic devices.

Unveiling the potential of PVA-Er2O3 films for superior optical, electrical, mechanical, and thermal applications

This study explores the enhancement of polyvinyl alcohol (PVA) films by incorporating erbium oxide (Er2O3) nanoparticles using the casting solution method. We investigated the structural, optical, electrical, dielectric, and mechanical properties of PVA-Er2O3 nanocomposite films with varying Er2O3 concentrations (2.5, 5, 7.5, and 10 wt%). Structural analyses confirmed successful nanoparticle integration. Optical measurements revealed reduced transparency and bandgap, alongside increased refractive index. Electrical conductivity showed significant improvement with Er2O3 inclusion. Dielectric properties demonstrated enhanced performance, with frequency-dependent studies and Argand plot analysis providing insights into charge transport and relaxation mechanisms. Mechanical testing indicated increased tensile strength and Young’s modulus, with the 10 wt% nanocomposite showing comparable performance to pure PVA. These findings highlight the potential of PVA-Er2O3 films for advanced applications in electronics, sensors, and energy storage systems.

Electrical properties of GaAsN/GaAs-superlattice films with different N distributions fabricated by atomic layer epitaxy

The effects of nitrogen (N) distribution on the electrical properties of GaAsN films were evaluated by intentionally changing the N distribution using atomic layer epitaxy (ALE) and post-annealing. The N distribution was controlled in the growth direction by growing superlattice (SL) thin films repeatedly growing 1 GaAsN layer and 0, 3, and 5 layers of GaAs by ALE. These films were referred to as (1:0), (1:3), and (1:5), respectively. To change the N distribution in the same thin film, N atoms were diffused by post-annealing. Changes in N distribution were evaluated by X-ray diffraction as changes in GaAsN superstructure. N atoms diffused from GaAsN layers to the adjacent layers in (1:3) films annealed above 750 °C, while they remained stable in those of (1:5) films annealed at temperatures up to 850 °C. The carrier mobility of both films increased monotonically with the annealing temperature. The concentration of ionized scattering centers decreased significantly in films annealed at 650 °C (independent of their N distributions) owing to the elimination of donor-type defects by annealing. Contrarily, the concentrations of N-induced scattering centers in (1:5) films annealed below 900 °C were similar, while those in (1:3) films annealed above 750 °C decreased significantly, in agreement with the N-atom diffusion behavior of GaAsN layers. Thus, N-distribution homogenization can be related to the reduction of N-induced scattering centers.

Electrical transport properties of topographically demorphed films of La1-xBaxMnO3 grown on (00l)-oriented LaAlO3 substrate via spin-coating method

Herein, the crystal structure, valence, and electrical transport properties of La1-xBaxMnO3 films were examined by preparing La1-xBaxMnO3 films with varying Ba content (x = 0.22, 0.24, 0.26, 0.28) on LaAlO3 substrates using the sol-gel spin coating technique. The La1-xBaxMnO3 films prepared in the study exhibit topographically demorphed and non-dense characteristics in the microstructure, which is mainly caused by the Volmer-Weber growth mode of the films and the volatilization of organic matter during the sol-gel sintering process for films preparation. The increase of Ba doping leads to MnO6 deformation, decrease in grain boundary scattering, increase in Mn4+ ion content, and enhancement of both the double exchange mechanism and the Jahn-Teller effect. The four-probe results showed that the peak resistivity of the films decreased significantly with the increase in Ba2+ doping, and the metal-insulator transition temperature (Tp) shifted to higher temperatures. Peak temperature coefficient of resistivity (TCR) corresponding temperature (Tk) increased from 283.05 K (x = 0.22) to 309.31 K (x = 0.28), which was consistent with the trend of Tp; the peak value of TCR decreased with the increase of Ba doping. When x = 0.24, the Tk of the La1-xBaxMnO3 films reach room temperature (294.25 K) with TCR = 9.01 % K−1. In conclusion, the electrical properties of La1-xBaxMnO3 can be optimized by varying the amount of Ba doping to obtain La1-xBaxMnO3 films with room-temperature Tk and higher TCR values, providing reasonable data support and theoretical explanation for the Ba doping mechanism.

Structure and electrical properties of polysilicon films doped with ammonium tetraborate tetrahydrate

Here, p-type polysilicon films are fabricated by ex-situ doping method with ammonium tetraborate tetrahydrate (ATT) as the boron source, named ATT-pPoly. The effects of ATT on the properties of polysilicon films are comprehensively analyzed. The Raman spectra reveal that the ATT-pPoly film is composed of grain boundary and crystalline regions. The preferred orientation is the (111) direction. The grain size increases from 16−23 nm to 21−47 nm, by ~70% on average. Comparing with other reported films, Hall measurements reveal that the ATT-pPoly film has a higher carrier concentration (>1020 cm−3) and higher carrier mobility (>30 cm2/(V·s)). The superior properties of the ATT-pPoly film are attributed to the heavy doping and improved grain size. Heavy doping property is proved by the mean sheet resistance (R sheet,m) and distribution profile. The R sheet,m decreases by more than 30%, and it can be further decreased by 90% if the annealing temperature or duration is increased. The boron concentration of ATT-pPoly film annealed at 950 °C for 45 min is ~3 × 1020 cm−3, and the distribution is nearly the same, except near the surface. Besides, the standard deviation coefficient (σ) of R sheet,m is less than 5.0%, which verifies the excellent uniformity of ATT-pPoly film.

Effect of spin coating speeds on electrical and optical characteristic of perovskite SrTiO3 thin films prepared by sol-gel method

The perovskite strontium titanate (SrTiO3/STO) was prepared by the sol-gel process, and the STO thin film was deposited onto a glass substrate by the spin coating method. Effect of different spin coating speeds on the thickness, structural, optical, and electrical properties of the STO thin films was discussed. Five STO films with various spin coating parameters of 2000, 4000, 6000, 8000, and 10000 RPM were prepared. Thickness profilometer tests have shown that the thickness of the STO film changes from 802 nm at 10000 RPM to 1321 nm at 2000 RPM spin coating speed. The prepared STO films morphology was examined by scanning electron microscope. X-ray diffraction measurements have shown that crystalline STO films have been produced with a cubic perovskite structure. The optical properties of the prepared STO films were investigated using an ultraviolet visible spectrophotometer, and the results indicated that the STO film at 8000 and 4000 RPM spin speed show the lowest and the maximum optical band gap (2.83 and 2.90 eV, respectively). All STO films have absorption coefficient values higher than 103 cm−1. The prepared STO thin films had a refractive index between 2.40 and 2.42. The electrical characteristics of the prepared STO films were investigated using the four-point probe method, and it was found that as the spin coating speed increased from 2000 to 8000 RPM, the resistivity of the STO films reduced from 6.629∗1010 to 3.009∗1010 Ω. Moreover, the STO film at 8000 RPM spin speed has the best electrical conductivity (3.301∗10−5 S m−1).

Tailoring optical and electrical properties of PVP-I2 complexes through gamma irradiation-induced structural defect Engineering for optoelectronic applications

This study investigates the complexation of iodine with polyvinylpyrrolidone (PVP) subjected to gamma irradiation at doses of 0, 10, 20, and 30 kGy. The complex formation involves I2 acting as a Lewis acid with electron-rich PVP as a Lewis base through a charge transfer mechanism. UV–visible spectroscopy revealed a red shift of the absorption peak at 337 nm for irradiated PVP-I2 samples, indicating stronger interactions between the triiodide ion (I3¯) and irradiated PVP. FTIR analysis confirmed the formation of new C≡N moieties arising from PVP-I2 complexation. The FT-Raman analysis revealed a new C≡N peak at 2360 cm−1 in irradiated PVP-I2 samples, with increasing intensity correlating to higher irradiation doses, indicating enhanced electron delocalization due to complex formation. XRD analysis showed that PVP-I2 samples irradiated at 0 and 10 kGy exhibited higher crystallinity than those irradiated at 20 and 30 kGy, suggesting that high-dose irradiation causes PVP radiolysis and ring opening. Dielectric measurements demonstrated enhanced polarizability and ionic conductivity of irradiated PVP-I2 films, related to structural disorder promoting charge dissociation and ion mobility. The direct bandgap decreased from 2.75 eV for unirradiated samples to 2.55 eV for samples irradiated at 30 kGy, indicating the creation of new optically active defect states. Urbach energy increased from 0.85 eV to 1.55 eV with increasing irradiation dose, confirming increased disorder in the PVP structure. These findings reveal that gamma irradiation significantly alters the optical and electrical properties of PVP-I2 films by creating defects and disrupting structure, offering new insights for tailoring these materials for optoelectronic applications.

Enhancing electrical and thermal property of diamond-based Ta2N films through introducing a Ta transition layer

Diamond, renowned for its exceptional heat dissipation properties, stands out as an optimal substrate for tantalum nitride (Ta2N) film resistors. To fully exploit the high thermal conductivity of diamond, we introduce a thin tantalum (Ta) interlayer between the TaN thin film and the polished diamond substrate, aiming to strengthen their bond and enhance the interfacial thermal conductance. Comprehensive morphological and structural analyses, utilizing advanced techniques such as grazing incident X-ray diffraction (GI-XRD), transmission electron microscopy (TEM), and energy-dispersive X-ray spectroscopy (EDS), were employed. Electrical properties were measured using a four-point probe, and thermal boundary conductance (TBC) between Ta2N and diamond was assessed through time-domain thermoreflection (TDTR), comparing scenarios with and without the Ta interlayer. Results demonstrate that the Ta interlayer facilitates tantalum carbide (TaxC) formation, improving adhesion and resulting in a remarkable 70 % increase in overall interface TBC. Moreover, the thin Ta interlayer positively influences the overall temperature coefficient of resistance (TCR) of the Ta2N film. Our strategic approach showcases enhanced adhesion and thermal performance, opening promising avenues for elevated functionality and reliability of Ta2N film resistors in high-temperature applications.