Efficient Light-emitting Diodes Research Articles

Effect of the self-aligned etching thin p-GaN layer on the performance of AlGaN-based DUV LEDs with various chip sizes

The light extraction efficiency (LEE) for deep ultraviolet light-emitting diodes (DUV LEDs) is significantly sacrificed by the absorption of the p-GaN layer. In this work, the self-aligned etching process is employed to laterally over-etched periphery thin p-GaN under the p-electrode by 10 µm to further improve the performance of AlGaN-based LEDs with various chip sizes. We find that when compared with reference devices with chip sizes of 40 × 40 µm2, 60 × 60 µm2 and 100 × 100 µm2, the optical power levels for the proposed DUV LEDs are enhanced by 16.66%, 11.41% and 7%, respectively. The most optical power enhancement can be obtained for the 40 × 40 µm2 DUV micro-LED chip. Hence, it is indicated that the laterally over-etched p-GaN design is more effective in increasing the LEE for DUV LEDs with reduced chip size. This shows the potential of the self-aligned etching p-GaN process in enhancing the LEE of DUV micro-LEDs. In addition, the lateral over-etched thin p-GaN suppresses the carrier diffusion to the device edge, which reduces the diffusion capacitance therein, hence leading to an increased −3 dB bandwidth to 55.4 MHz from 75.9 MHz for the packaged device of 100 × 100 µm2.

Conjugated Polyelectrolytes as a Defect-Passivating Hole Injection Layer for Efficient and Stable Perovskite Light-Emitting Diodes

Conjugated Polyelectrolytes as a Defect-Passivating Hole Injection Layer for Efficient and Stable Perovskite Light-Emitting Diodes

Performance-optimized and phase purity-improved high-n quasi-two-dimensional perovskite for green light-emitting diodes

Quasi-two-dimensional (quasi-2D) perovskite has the advantage of enlarging exciton binding energy and is more suitable for efficient perovskite light-emitting diodes (PeLEDs). However, the quasi-2D perovskite films deposited with solution methods are usually mixtures of multiple phases with different inorganic layer numbers (n), unfavorable to obtaining high emission efficiency. In this study, we selected formamidinium lead bromide (FAPbBr3) as the light emitter and (2-phenylethyl)ammonium cation (PEA+) as the long-chain organic spacer cation to prepare high-n (n = 9) quasi-2D perovskite films with improved phase purity. Based on the multiple cations mixed engineering, the quality of these films improved obviously by partly replacing FA+ with minute quantities of cesium cation (Cs+). The improvement focused on remarkably enhanced photoluminescence, few low-n phases, and decreased grain sizes. The green PeLED based on the performance-optimized and phase purity-improved high-n quasi-2D perovskite reached a high brightness of 28 960 cd/m2 together with a maximum current efficiency of 44.8 cd/A and a maximum external quantum efficiency of 9.99%.

Improved hole injection for AlGaN-based DUV LEDs with graded-composition multiple quantum barrier insertion layers

The primary impediments to achieving high external quantum efficiency (EQE) and light output power (LOP) in AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) are inadequate hole injection efficiency and pronounced electron leakage. The significant polarization-induced positive charges, originating from the discontinuity in the Al composition between the last quantum barrier (LQB) and electron-blocking layer (EBL), attract electrons, consume holes, and reflect holes back into the p-type region, leading to severe electron leakage and low hole injection efficiency. In this paper, we introduce a graded-composition multiple quantum barrier (GQB) structure at the LQB/EBL interface. We adjust the Al composition in the insertion layer to alter the electrical polarity of the polarization-induced sheet charges, thereby modifying the electric field distribution in the EBL, LQB, and inserted GQB structure. Consequently, holes acquire boosted energy during their migration towards the active region. In addition, we enhance the hole injection and electron confinement ability via reducing the effective valence band barrier height and increasing the effective conduction band barrier height, thus diminishing the possibility of electron leakage from the active region into the p-type region. Therefore, the GQB structure proposed in this study provides a promising approach to improving the optical and electrical performance of DUV LEDs.

Hybrid Functional ITO/Silver Nanowire Transparent Conductive Electrodes for Enhanced Output Efficiency of Ultraviolet GaN-Based Light-Emitting Diodes.

We investigated hybrid functional transparent conductive electrodes (HFTCEs) composed of indium-tin-oxide (ITO) and silver nanowires (AgNWs) for the enhancement of output efficiency in GaN-based ultraviolet light-emitting diodes (UVLEDs). The HFTCEs demonstrated an optical transmittance of 69.5% at a wavelength of 380 nm and a sheet resistance of 16.4 Ω/sq, while the reference ITO TCE exhibited a transmittance of 76.4% and a sheet resistance of 18.7 Ω/sq. Despite the 8.9% lower optical transmittance, the UVLEDs fabricated with HFTCEs achieved a 25% increase in output efficiency compared to reference UVLEDs. This improvement is attributed to the HFTCE's twofold longer current spreading length under operating forward voltages, and more significantly, the enhanced out-coupling of localized surface plasmon (LSP) resonance with the trapped wave-guided light modes.

Progress, application and prospect of rare earth-based perovskite light-emitting diodes

Perovskites recently become star materials in light-emitting diodes (LEDs) field due to their high color purity, tunable emission spectra, and cost-effectiveness. However, the commercial applications of perovskite LEDs are hampered by inferior lattice stability of perovskite materials. Successful modification of functional materials is a promising strategy towards efficient and stable perovskite LEDs. Rare earth (RE) metals are incorporated into the perovskite lattice, including double perovskites, by occupying the B-site or A-site in perovskite such as ABX3 or A2BB'X6, forming the RE-based perovskite. Doping with RE ions enables precise control emission color of materials across a broad spectrum ranging from ultraviolet to near infrared. Moreover, this strategy reduces the energy loss in electron relaxation process and enhances electroluminescence intensity of LED device, thereby improving the potential of commercial applications of perovskite LEDs. This review provides a comprehensive and systematic summarization of recent progress and challenges in RE-based perovskite materials (structure types, luminescence mechanism and synthesis methods) and LEDs (device structures and main applications) to provide some enlightening insights for realization of efficient and stable RE-based perovskite LEDs.

Monoammonium Modified Dion-Jacobson Quasi-2D Perovskite for High Efficiency Pure-Blue Light Emitting Diodes.

Quasi-2D perovskites exhibit impressive optoelectronic properties and hold significant promise for future light-emitting devices. However, the efficiency of perovskite light-emitting diodes (PeLEDs) is seriously limited by defect-induced nonradiative recombination and imbalanced charge injection. Here, the defect states are passivated and charge injection balance is effectively improved by introducing the additive cyclohexanemethylammonium (CHMA) to bromide-based Dion-Jacobson (D-J) structure quasi-2D perovskite emission layer. CHMA participates in the crystallization of perovskite, leading to high quality film composed of compact and well-contacted grains with enhanced hole transportation and less defects. As a result, the corresponding PeLEDs exhibit stable pure blue emission at 466nm with a maximum external quantum efficiency (EQE) of 9.22%. According to current knowledge, this represents the highest EQE reported for pure-blue PeLEDs based on quasi-2D bromide perovskite thin films. These findings underscore the potential of quasi-2D perovskites for advanced light-emitting devices and pave the way for further advancements in PeLEDs.

Quantum-Confined Perovskite Nanocrystals Enabled by Negative Catalyst Strategy for Efficient Light-Emitting Diodes.

The perovskite nanocrystals (PeNCs) are emerging as a promising emitter for light-emitting diodes (LEDs) due to their excellent optical and electrical properties. However, the ultrafast growth of PeNCs often results in large sizes exceeding the Bohr diameter, leading to low exciton binding energy and susceptibility to nonradiative recombination, while small-sized PeNCs exhibit a large specific surface area, contributing to an increased defect density. Herein, Zn2+ ions as a negative catalyst to realize quantum-confined FAPbBr3 PeNCs with high photoluminescence quantum yields (PL QY) over 90%. Zn2+ ions exhibit robust coordination with Br- ions is introduced, effectively retarding the participation of Br- ions in the perovskite crystallization process and thus facilitating PeNCs size control. Notably, Zn2+ ions neither incorporate into the perovskite lattice nor are absorbed on the surface of PeNCs. And the reduced growth rate also promotes sufficient octahedral coordination of PeNC that reduces defect density. The LEDs based on these optimized PeNCs exhibits an external quantum efficiency (EQE) of 21.7%, significantly surpassing that of the pristine PeNCs (15.2%). Furthermore, the device lifetime is also extended by twofold. This research presents a novel approach to achieving high-performance optoelectronic devices.

Mitigating bulk halide defects in blue-emissive perovskite nanocrystals using benzoyl halides for efficient light-emitting diodes

While recent advances have demonstrated highly efficient and stable perovskite light-emitting diodes (LEDs), blue perovskite LEDs still show low performance compared to green, red, near IR counterparts. Despite perovskites being well-known for their defect tolerance, blue perovskites are highly vulnerable to defects, which introduce deep trap states. In this study, we mitigated bulk halide vacancies in perovskite nanocrystals (PNCs) via the diffusion-assisted halide repairing strategy. We confirmed halide vacancies inside as-synthesized PNCs, both in the core and on the surface, through HADDF-STEM. By treating PNCs with benzoyl halides, these halide vacancies were further mitigated due to halide diffusion via concentration gradients between the surface and the core, resulting in enhanced PLQY of the PNCs. In the fabrication of blue PNCs LEDs, this approach yielded a comparable efficiency with an EQE of 5.37 % at 469 nm, demonstrating the robustness of our method for efficient blue perovskite LEDs. Furthermore, the peak wavelengths of benzoyl halide-treated PNCs LEDs remained stable during operation, whereas those of pristine PNC LEDs exhibited peak shifts. We believe that our novel approach can be universally applied to various types of perovskites, reducing bulk vacancies. This advancement will be a significant breakthrough for the performance enhancement of blue perovskite LEDs in the future.

Utilization of Optical OFDM Modulation on Blue LED VLC Datacom Without Equalization for 4 m Wireless Link.

To achieve higher visible light communication (VLC) traffic capacity, using the wide bandwidth light-emitting diode (LED) and spectral efficiency modulation signal, is currently the most commonly used method. In this demonstration, we apply the orthogonal frequency division multiplexing quadrature amplitude modulation (OFDM-QAM) with bit- and power-loading algorithm on single blue LED to achieve >1 Gbit/s VLC capacity, when a 400 MHz bandwidth avalanche photodiode (APD)-based receiver (Rx) is exploited for decoding. Here, the higher sensitivity APD can be applied to compensate for the wireless VLC link length in the proposed LED VLC system, and due to the lower LED illumination (255 to 40 lux), is used for the indoor access network after passing the wireless link length of 1 to 4 m. As a result, using single blue LED can achieve 0.962 to 1.057 Gbit/s OFDM rate with available 400 MHz bandwidth APD in poorly illuminated condition indoors without applying analogy equalization.

Surface Treatment Engineering Enables Highly Efficient Perovskite Light-Emitting Diodes with Significantly Enhanced Modulation Speed

Surface Treatment Engineering Enables Highly Efficient Perovskite Light-Emitting Diodes with Significantly Enhanced Modulation Speed

Full-angle light out-coupling enhancement of quantum dot light-emitting diodes by Mie-scattering micro-lens arrays

High efficiency, high brightness, and long-life quantum dot light-emitting diodes (QLEDs) are crucial for realizing integrated display and lighting applications. However, about 80% of the light is confined inside the device with substrate mode, waveguide mode, and plasma mode, which greatly weakens the brightness, efficiency and lifetime of the device. Here, a quasi-periodic concave template with large area was fabricated through the spontaneous condensation of droplets on the substrate surface. Based on the quasi-periodic template, SiO2 micro-lens arrays (SiO2-MLAs) Mie scattering composite structure was fabricated by imprinting on a SiO2-nanosphere thin film, which significantly improved light out-coupling at full angles with optimized quasi-Lambertian luminescence characteristics. In comparison to the planar QLED with state-of-the-art, the external quantum efficiency (EQE) demonstrated a qualitative improvement (>20%). Accordingly, the EQE, luminance (L), T50 lifetime (reduce to half brightness) of the green QLEDs with SiO2-MLAs structure have been optimized by 22%, 28%, 31%, and up to 24.21%, 381962.6 cd/m2, 111335 h, respectively. This strategy provides valuable insights into mass-producing and utilizing SiO2-MLA Mie scattering composite structures to boost QLED performance in high-efficiency display and lighting applications.

Hetero-Nucleation Induced [111]-Oriented Mixed Halide Perovskite for Stable Pure Red Light-Emitting Diodes.

Mixed halide 3D perovskites are promising for bright, efficient, and wide-color gamut light-emitting diodes (LEDs) due to their excellent carrier transport, high luminescence, and easily tunable bandgaps. However, serious halide ion migration inside mixed halide 3D perovskite results in poor operational and spectral stability of the as-fabricated LEDs. Here, a hetero-nucleation crystallization strategy is reported to grow [111]-orientationpreferred mixed halide 3D perovskite CsPbI3-xBrx thin films for stable pure red LEDs. This hetero-nucleation crystallization is enabled by the addition of phosphoric acid (H3PO4) complexation, which promotes the growth of small perovskite grains into large grains with uniform [111]-orientation. The obtained [111]-orientation preferred film exhibits excellent stability under light or electric field stimulus as revealed by model analysis and experimental results compared to that of [001]-orientation preferred film. Thus, based on the [111]-orientationpreferred film, the fabricated LED exhibits an external quantum efficiency of 22.8%, a maximum brightness of 12000cdm-2, and a half-life time of 4080min under 1.5mA cm-2. More importantly, the electroluminescence spectrum of the device remains stable during the continuous operation of 4080min, showcasing the significant spectral stability improvement enabled by the hetero-nucleation induced [111]-orientation strategy.

Blue Light-Emitting Diodes Based on Pure Bromide Perovskites.

Blue perovskite light-emitting diodes (LEDs) are essential for the creation of full-color displays and white-light illumination, and some significant progress is made in recent years. However, most high-performance blue perovskite LEDs are currently based on mixed-halide perovskites and suffer from unstable spectra due to inevitable halide phase segregation, which is unfavorable for the application of blue perovskite LEDs. In contrast, blue emissions from pure bromide perovskites generally exhibit stable spectra (consistent emission peak positions and spectral shapes) and are worthy of attention. In this review, the recent advances in blue LEDs based on pure bromide perovskites according to different strategies are classified and summarized. Moreover, the challenges related to poor charge injection, high defect-state density, lack of high-performance in the deeper blue region, and inferior operational stability are addressed. Finally, an outlook is provided on feasible future research directions for highly bright, efficient, and stable blue perovskite LEDs.

Efficient Polycrystalline Single-Cation Perovskite Light-Emitting Diodes by Simultaneous Intracrystal and Interfacial Defect Passivation.

Polycrystalline perovskite light-emitting diodes (PeLEDs) have shown great promise with high efficiency and easy processability. However, PeLEDs using single-cation polycrystalline perovskite emitters have demonstrated low efficiency due to defects within the grains and at the interfaces between the perovskite layer and the charge injection contact. Thus, simultaneous defect engineering of perovskites to suppress exciton loss within the grains and at the interfaces is crucial for achieving high efficiency in PeLEDs. Here, 1,8-octanedithiol which is a strong nucleophile, is used to increase the luminescence efficiency of a single-cation perovskite by suppressing non-radiative recombination within the grains of their polycrystalline emitter film as well as at their interface with an anode. The dithiol additive performs a multifunctional role in defect passivation, spatial confinement of excitons, and prevention of exciton quenching at the interface between the perovskite layer and the underlying hole-injection layer. Photoluminescence studies demonstrate that incorporating the dithiol additive significantly enhances the charge carrier dynamics in perovskites, resulting in an external quantum efficiency (EQE) of up to 23.46% even in a simplified PeLED that does not use a hole-injection layer. This represents the highest level of EQE achieved among devices utilizing polycrystalline single-cation perovskites.

Electroluminescent and photoluminescent light-emitting diodes from carbon dots and device architecture optimization.

Light emission from carbon dots (CDs) is of great interest in both electroluminescence and photoluminescence. Herein, we construct electroluminescent and photoluminescent light-emitting diodes (LEDs) from emitters of CDs. The electroluminescent LED with host-guest-doped dual emissive layers (EMLs) of [poly(9-vinylcarbazole) (PVK)-CDs] × 2 gives satisfactory electro-optical properties, with maximum luminance of 560 cd m-2 at 16 V, luminous efficiency of 0.183 cd A-1, power efficiency of 0.082 lm W-1, and external quantum efficiency of 0.25%, which are superior to the counterparts with single-EML of CDs, single-EML of [PVK-CDs], and triple-EMLs of [PVK-CDs] × 3. These enhanced properties are rationally ascribed to optimization of the device architecture, carrier balance improvement, and reduction in concentration-induced quenching. The electroluminescent LEDs also show color evolution from PVK to CDs, and/or to the PVK/CDs interface, with increasing driving voltages, owing to incomplete energy transfer from PVK to CDs. Highly efficient photoluminescent LEDs with 365- and 395-nm UV excitation are demonstrated. With a CDs : polyvinyl pyrrolidone ratio of 1 : 3, the 365-nm excited photoluminescent LED gives a maximum luminance of 512 347 cd m-2 with a power efficiency of 25.2 lm W-1, while the 395-nm excited photoluminescent device gives a maximum luminance of 670 954 cd m-2 with a power efficiency of 22.0 lm W-1, with both showing yellow emission. Our experiments provide some new ideas for broadening CD applications and advancing LEDs.

Ions-induced Assembly of Perovskite Nanocomposites for Highly Efficient Light-Emitting Diodes with EQE Exceeding 30.

Metal halide perovskites, a cost-effective class of semiconductos, hold great promise for display technologies that demand high-efficiency, color-pure light-emitting diodes (LEDs). Early research on three-dimensional (3D) perovskites showed low radiative efficiencies due to modest exciton binding energies. To inprove luminescence, reducing dimensionality or grain size has been a common approach. However, dividing the perovskite lattice into smaller units may hinder carrier transport, compromising electrical performance. Moreover, the increased surface area introduce additional surface trap states, leading to greater non-radiative recombination. Here, an ions-induced growth method is employed to assembe lattice-anchored perovskite nanocomposites for efficient LEDs with high color purity. This approach enables the nanocomposite thin films, composed of 3D CsPbBr3 and its variant of zero-dimensional (0D) Cs4PbBr6, to feature significant low trap-assisted nonradiative recombination, enhanced light out-coupling with a corrugated surface, and well-balanced charge carrier transport. Based on the resultant 3D/0D perovskite nanocomposites, the perovskite LEDs (PeLEDs) achieving an remarkable external quantum efficiency of 31.0% at the emission peak of 521 nm with a narrow full width at half-maximum of only 18 nm. This sets a new benchmark for color purity in high performance PeLED research, highlighting the significant advantage of this approach.

Lead-Free Perovskite With Efficient Tellurium Ion Activation for Multifunctional Applications.

Lead-free perovskite materials have received extensive attention due to their non-toxicity, super environmental stability and adjustable photoelectric properties. However, the inherent problems of low luminous efficiency and low photoluminescence quantum yields (PLQYs) limit its development in multifunctional applications. Here, Te4+ doped Cs2ZrCl6 with high luminous efficiency and stability for multifunctional applications are developed. Te4+ ions are used as emission centers to improve the optical properties of Cs2ZrCl6 to make efficient and stable single-component white light-emitting diodes (WLEDs), and can be used as scintillator materials to improve scintillation performance to achieve high-resolution and low-dose X-ray imaging detection. In addition, it is found for the first time that Te4+ ions can be introduced into the trap center, so that the Cs2ZrCl6:Te4+ perovskite material exhibits excellent persistent luminescence (PersL) and mechanoluminescence (ML) after X-ray radiation, which has potential applications in the fields of delayed imaging and stress sensing. This work provides a method for designing lead-free perovskites with high optical performance and scintillating properties, as well as developing multifunctional applications.

Thin Film Stoichiometry and Defects Management for Low Threshold and Air Stable Near-Infrared Perovskite Laser.

While significant efforts have been devoted to optimize the thin-film stoichiometry and processing of perovskites for applications in photovoltaic and light-emitting diodes, there is a noticeable lack of emphasis on tailoring them for lasing applications. In this study, it is revealed that thin films engineered for efficient light-emitting diodes, with passivation of deep and shallow trap states and a tailored energetic landscape directing carriers toward low-energy emitting states, may not be optimal for light amplification systems. Instead, amplified spontaneous emission (ASE) is found to be sustained by shallow defects, driven by the positive correlation between the ASE threshold and the ratio of carrier injection rate in the emissive state to the recombination rate of excited carriers. This insight has informed the development of an optimized perovskite thin film and laser device exhibiting a low threshold (≈ 60 µJ cm-2) and stable ASE emission exceeding 21 hours in ambient conditions.

Efficient and Stable Red Perovskite Light-Emitting Diodes via Thermodynamic Crystallization Control.

Efficient and stable red perovskite light-emitting diodes (PeLEDs) demonstrate promising potential in high-definition displays and biomedical applications. Although significant progress has been made in device performance, meeting commercial demands remains a challenge in the aspects of long-term stability and high external quantum efficiency (EQE). Here, an in situ crystallization regulation strategy is developed for optimizing red perovskite films through ingenious vapor design. Mixed vapor containing dimethyl sulfoxide and carbon disulfide (CS2) is incorporated to conventional annealing, which contributes to thermodynamics dominated perovskite crystallization for well-aligned cascade phase arrangement. Additionally, the perovskite surface defect density is minimized by the CS2 molecule adsorption. Consequently, the target perovskite films exhibit smooth exciton energy transfer, reduced defect density, and blocked ion migration pathways. Leveraging these advantages, spectrally stable red PeLEDs are obtained featuring emission at 668, 656, and 648nm, which yield record peak EQEs of 30.08%, 32.14%, and 29.04%, along with prolonged half-lifetimes of 47.7, 60.0, and 43.7h at the initial luminances of 140, 250, and 270cd m-2, respectively. This work provides a universal strategy for optimizing perovskite crystallization and represents a significant stride toward the commercialization of red PeLEDs.