Effect Of Substrate Temperature Research Articles

Chemical Synthesis and Substrate Temperature Effect on Morphology of 2D Vanadium Disulfide

Abstract2D metallic transition metal dichalcogenides exhibit plenty of intriguing physical properties such as magnetism, charge density wave, and superconductivity resulting in worldwide attention from condensed‐matter physicists over the last few decades. Herein, the chemical synthesis and substrate temperature effect on the morphology of 2D vanadium disulfide (VS2) are reported. The synthesis is done by atmospheric pressure chemical vapor deposition using vanadium chloride (VCl3) precursor on SiO2/Si, fluorphlogopite mica, and hexagonal boron nitride (h‐BN) substrates. The effect of substrate temperatures on the morphology of 2D VS2 nanosheets growth is investigated by optical microscopy, scanning electron microscopy, and atomic force microscopy. Large area VS2 films are attained when the substrate temperature is 650 °C whereas VS2 single crystals are obtained at 550 °C.

Nanoparticles deposition patterns in evaporating nanofluid droplets on smooth heated hydrophilic substrates: A 2D immersed boundary-lattice Boltzmann simulation

Nanoparticles deposition dynamics and deposition patterns in evaporating nanofluid droplets on a smooth hydrophilic heated substrate in a vapor environment (0.9Tc) under zero gravity are investigated numerically by a 2D immersed boundary-lattice Boltzmann method in combination of the non-isothermal Gong-Cheng liquid-vapor phase change model. The Marangoni flow along droplet interface is found to be the dominated transportation mechanism of nanoparticles inside an evaporating nanofluid droplet when droplet contact line is freely moving. It is demonstrated that the pinning of the triple phase contact line on the substrate having a small contact angle (θ=51°) is a required condition for a ring-like deposition pattern after a nanofluid droplet evaporation. On the other hand, on a substrate with a larger contact angle (θ=74°) where the triple contact line is not pinned, the upward Marangoni flow along droplet interface has a greater strength to resist nanoparticles moving toward the edge of the heated substrate, which result in bump-like deposition patterns after a nanofluid droplet evaporation. A regime map, showing effects of substrate contact angle and substrate temperature on nanoparticle deposition patterns after droplet evaporation, is presented. It is shown that the ring-like deposition pattern occurs when the triple line is strongly pinned (at small contact angle) and the Marangoni flow is weak (small contact angle and low substrate temperature). The bump deposition pattern occurs when the droplet contact line is not pinned (at high contact angle) and the Marangoni flow is strong (large contact angle and high temperature).

Effect of Pre-annealing Treatment of Coating Material on MgF2 Thin Films Prepared by Thermal Evaporation Method

In the present study, we investigate the effect of substrate temperature, annealing temperature, and annealing time of the MgF2 coating material on the physical properties of the MgF2 thin film. The MgF2 thin film has been fabricated by MgF2 annealed coating material by thermal evaporation method. Our experimental results indicate that the oxidation of MgF2 in the air oven started at 800 ∘C. The optical transmittance of the MgF2 thin film decreases by increasing the annealing temperature and annealing time of MgF2 coating material. The results of the EDX test show that by increasing the annealing temperature and annealing time of MgF2 coating material, the content of oxygen element in the MgF2 thin film increases and the amount of fluorine element reduces.

Growth mechanism for zinc coatings deposited by vacuum thermal evaporation

The vacuum thermal evaporation technique was used to simultaneously deposit zinc coatings onto interstitial free steel plates and single-crystal silicon wafers in a high vacuum environment. The effect of substrate temperature on the morphology and crystal orientation of zinc coatings was investigated. When the substrate temperature was 25 and 50 °C, the zinc crystallites were plate-like and grew under a particular angle to the substrate surface. After the substrate was heated to 100 °C, the zinc crystallites were regular hexagonal and arranged almost parallel to the substrate surface. In addition, observation of pure zinc coatings with different thicknesses showed that the growth of zinc coating was mainly in the Volmer–Weber mode. When the process parameters were appropriate, the zinc coating was composed of closely arranged columnar crystallites, and the crystallites grew preferentially along [0001] direction.

The Effect of Substrate Temperature on Tribological and Electrical Properties of Sputtered Carbon Nitride Thin Film

The Effect of Substrate Temperature on Tribological and Electrical Properties of Sputtered Carbon Nitride Thin Film

The effect of substrate temperature on Cu(In,Ga)Se2 layers deposited by dual thermal evaporation

This paper focuses on the preparation of CuInxGa1-xSe2 (CIGS) by a dual thermal evaporation method only without post-salinization treatment. The effect of substrate temperature on the deposition of stoichiometric layers has been explored. Fabricated CuInxGa1-xSe2 layers were described by energy-dispersive X-ray (EDX), diffraction of X-ray, Raman spectroscopy, atomic force microscopy (AFM), scanning electron microscopy (SEM), Ultraviolet-Visible-Near IR Spectroscopy and the four-point probing technique. CIGS layers of chalcopyrite structures were fabricated successfully with a bandgap of 1.35 eV. The stoichiometry, the grain size and roughness of layers are affected dramatically by the substrate temperature due to re-evaporation of the selenium content during deposition at high temperature. Electrical measurements explain the relationship between electrical conductivity and the value of metal/Se.

Effect of substrate temperature on reactive RF magnetron sputtered SnO2 thin films for photovoltaic applications

SnO2 thin films were deposited using reactive RF magnetron sputtering technique at different substrate temperatures such as RT (S1), 200 °C (S2) and 400 °C (S3) in order to obtain highly crystalline as well as highly transparent films. The effect of substrate temperature on the structural, optical and electrical properties of SnO2 thin films was also studied. The observed XRD patterns indicated the formation of SnO2 in tetragonal phase with primitive lattice structure. UV–Vis-NIR spectroscopic analysis exhibited the high optical transparency (>90%) at the wavelength of 600 nm. Hall Effect measurements demonstrated the n-type conductivity of SnO2 thin films with high carrier concentration (-2.40 × 1020 to −8.40 × 1018 cm−3) and mobility (1.62 to 10.83 cm2/Vs) as well as low resistivity in the order of 10-2 Ω.cm for S1-S3. However, S2 (200 °C) is considered as potential candidate for photovoltaic applications because of reasonably high carrier concentration, enhanced crystalline nature, and also low processing temperature in addition to the suitable optical band gap (3.7 eV).

Effect of Substrate Temperature on Structure, Morphology and Optical Properties of β-Ga2O3 Thin Film Grown on GaN by MBE

Effect of Substrate Temperature on Structure, Morphology and Optical Properties of β-Ga2O3 Thin Film Grown on GaN by MBE

Optimization of structural and optical properties of sputter deposited TiO2 thin films by controlling deposition parameters

Titanium oxide (TiO2) thin films have been deposited onto highly cleaned soda lime glass substrates by DC magnetron reactive sputtering system. The Ti target with purity 99.99% is sputtered by argon gas in the sputtering chamber. Oxygen gas with purity 99.99% is introduced during the deposition process into the sputtering chamber as reactive gas for the synthesis of titanium oxide. Structural and optical properties of TiO2 thin films have been characterized by X-ray diffraction (XRD), Raman spectroscopy and UV-Vis. spectroscopy. The effect of substrate temperature and sputtering power on the optical properties of TiO2 thin films has been studied. The XRD and Raman spectroscopy of as-deposited films are used to study the structural properties of TiO2 as a function of substrate temperature and sputtered power. The structural studies show the crystalline nature of TiO2 thin films. The narrowing of energy band gap of sputtered deposited TiO2thin films was studied using UV-Vis. spectroscopy.

Effect of substrate temperature on thermally evaporated CdS/CZTS for solar cell fabrication

The metal chalcogenides has a potential application in energy harvesting systems due to the good optical absorption, much abundance and suitable band potentials. In view of this, n-type Cadmium sulphide (CdS) thin films were thermally evaporated on conducting glass substrate (patterned Indium doped Tin Oxide (ITO) substrates, Ossila S211) followed by the p-type Copper Zinc Tin Sulphide (CZTS) films using nanocrystalline CZTS which in turn was obtained by mechanosynthesis at different milling rates. The mechanosynthesized CZTS nanoparticles and its corresponding films obtained by thermal evaporation were subjected to various characterization techniques such as XRD, UV–Vis-NIR spectroscopy and Hall Effect Measurement techniques in order to understand its physical properties, to access the rate of absorbance and to determine the type of conduction. Moreover, n-CdS as well as p-CZTS films were deposited at different substrate temperatures and studied the effect of temperature on the structural and optoelectronic behaviour of the respective films toward the fabrication of heterojunction solar cells. Finally, the p-n heterojunction was formed using n-CdS/p-CZTS films on patterned ITO substrates.

Significant role of substrate temperature on the morphology, electronic structure and thermoelectric properties of SrTiO3 films deposited by pulsed laser deposition

The effect of substrate temperature on the surface morphology, electronic structure, and thermoelectric properties of SrTiO3 (STO) films were investigated using the atomic force microscopy, X-ray diffraction, X-ray absorption spectroscopy (XAS). The STO films were grown by pulsed laser deposition by varying the substrate temperatures from room temperature to 850 °C. A strong dependence of the lattice parameters and the surface morphology lead to the 3D island growth process with substrate temperature. The variation in the substrate temperature results in the evolution of the microstructure and the enhancement of electrical and thermoelectric properties. The large power factor of 10 μWm−1K−2 at (400 K) is evident for the thin films deposited at the substrate temperature of 650 °C and is highly suitable for thermoelectric applications. The XAS spectra reveal the reduction in valence state and off-center displacement of Ti ions in TiO6 octahedron with substrate temperatures. These spectra shift to the lower energy side indicating the presence of oxygen vacancies that are responsible for the observed transport behaviour. These results show that the substrate temperature plays a significant role in tuning the electrical and thermoelectric properties due to O vacancies. Thus, the optimum growth temperature required for the deposition of the SrTiO3 films is 650 °C for thermoelectric applications.

F and Al co-doped zinc oxide thin films deposited by ultrasonic spray pyrolysis: Effects of substrate temperature on physical properties

In this study, F and Al co-doped ZnO (FAZO) films were prepared by ultrasonic spray pyrolysis combined with rapid thermal annealing treatment. The influence of substrate temperature (Ts) on the structure, morphology, and electrical and optical properties of the prepared FAZO films was systematically studied. The results showed the hexagonal wurtzite structure of all prepared FAZO films and the gradual changes in the preferred orientation of the films from (100) to (100) and (002) with increasing temperature. With increasing Ts, the diffraction peak of (002) became stronger, the morphology of the thin film changed from a mix of “rice-granular” small particles and “shell-like” large particles to flat and dense morphology, and the root-mean-square variation of the film’s particle size decreased. Furthermore, the resistivity decreased with an increase in Ts, and the film transmittance and optical bandgap increased significantly. The FAZO film prepared at 480 °C had the best photoelectric characteristics, with mobility of 22.9 cm2/(Vs), carrier concentration of 1.75 × 1020 cm–3, resistivity of 1.56 × 10–3 Ωcm, and over 85% average transmittance in the optical range of 400–1400 nm.

INFLUENCE OF THE SUBSTRATE TEMPERATURE ON TiO2 THIN LAYERS DEPOSITED BY THE DIRECT CURRENT MAGNETRON SPUTTERING TECHNOLOGY

In this study, Anatase thin films of titanium dioxide (TiO[Formula: see text] are deposited by the Direct Current (DC) magnetron sputtering technique on glass substrate for future application in gas sensors. In our work, we focused and discussed the effect of various substrate temperatures [Formula: see text]C, [Formula: see text]C and [Formula: see text]C, and film thicknesses 142, 220 and 410[Formula: see text]nm, respectively, in order to study the structural and optical properties of the TiO2 thin films. The crystalline structure and optical properties of TiO2 nanoparticles were investigated using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDS), Atomic Force Microscopy (AFM), Raman spectroscopy and UV–visible spectroscopy. The formation of the Anatase TiO2 with Tetragonal crystal structure has been confirmed with XRD. UV–visible spectrophotometry characterization of the developed thin films showed that all the films had an optical transmission greater than 92% in the visible region. In addition, the obtained direct and indirect optical band gaps using the Tauc plot are 3.66, 3.34[Formula: see text]eV at [Formula: see text]C 3.74, 3.37[Formula: see text]eV at [Formula: see text]C and 3.71, 3.37[Formula: see text]eV at [Formula: see text]C, respectively. Forouhi–Bloomer (FB) physical model has been used to obtain the refractive index and extinction coefficient by fitting theoretical transmittance curves to experimental ones. The optical refractive index is found to vary from 2.350 for [Formula: see text]C, 2.1499 for [Formula: see text]C and 2.1420 for [Formula: see text]C. Moreover, we have obtained an extinction coefficient [Formula: see text] ([Formula: see text] of around [Formula: see text] for both substrate temperatures [Formula: see text]C and [Formula: see text]C, and around [Formula: see text] for the [Formula: see text]C.

Effect of substrate temperature and preferred orientation on the tribological properties of Tantalum nitride coatings

Abstract Tantalum nitride (TaN) coatings have been deposited on Stainless steel (SS 316L) substrates by magnetron sputtering technique. The structural, morphological and tribological characteristics as a function of substrate temperature (Ts) have been studied using X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Linear reciprocating tribometer. XRD analysis revealed that the coatings showed cubic phase and no secondary phase has been formed in coatings during deposition. XRD also revealed that the preferred orientation of coatings changes with change in Ts. Crystallite size was increased with increasing Ts from 200 °C−400 °C. The tribological properties of TaN coatings with respect to Ts and preferred orientation were studied. The results revealed that there is a significant impact of Ts and preferred orientation on tribology properties. The coating deposited at 400 °C with (2 2 0) preferred orientation shows lower coefficient of friction with enhanced wear resistance compared to the other two coatings deposited at 200 °C and 300 °C.

Effects of temperature and target power on the sputter-deposition of (Ti,Zr)n+1AlCn MAX-phase thin films

Solid solution MAX phases in the Ti–Zr–Al–C system are investigated by sputter-deposition from elemental (Al, C) and alloy (Ti:Zr 50:50) targets. The effect of substrate temperature in the range 850 ​°C–1000 ​°C and different Al target-power are discussed. Lower-temperature conditions yielded films mainly composed of carbide and aluminide phases, (Ti,Zr)C and Al3Zr(Ti), while temperatures ​≥ ​950 ​°C resulted in (Ti,Zr)2AlC MAX-phase-containing films.

Effect of substrate temperature on morphology and properties of ZnO:In nanocrystalline films grown by PLD

The purpose of this work is to study the formation regularities of ZnO:In nanocrystalline films grown by pulsed laser deposition (PLD) for application as contact layers of photosensitive elements. It was found that increasing in the substrate temperature from 300 °C to 400 °C the films have a continuous granular structure with a grain size of 9±2 nm and 13.5±4.5 nm, respectively. The sample obtained at the substrate temperature of 150 °C is characterized by the presence of whisker-like structures with 200±47 nm long and 12±8 nm wide on the film’s surface. With increasing substrate temperature from 150 °C to 400 °C, the value of resistivity decreases from 9.3·10−1 Ω·cm to 2.9·10−2 Ω·cm, the concentration of current carriers increases from 2.12·1018 cm−3 to 3.5·1019 cm−3, and the mobility of current carriers also increases from 2.51 cm2/(V·s) to 6.17 cm2/(V·s). The results obtained can be used in the development and manufacture of highly efficient photoelectric converters based on hybrid nanostructures.

An Alternative Healing Method for Grafted Tomato Transplants: The Effect of Light Exclusion and Substrate Temperature on Plant Survival and Growth

The use of tomato (Solanum lycopersicum) grafting is gaining traction across the United States, but small-scale growers face the challenge of creating optimum postgrafting healing conditions. The practice of blocking light for a period of 2 to 4 days while maintaining high humidity is commonly recommended for healing grafted tomato transplants; however, research is exploring alternatives to this practice. The present study investigated a low-input healing method for grafted tomato transplants with a specific focus on light and the use of propagation heat mats to regulate substrate and healing chamber air temperatures during the 7-day healing process. We hypothesized that 4 days of light exclusion and the use of propagation heat mats would improve grafted tomato transplant survival and growth. ‘Cherokee Purple’ was used as the scion and ‘RST-04-106-T’ was used as the rootstock. The whole plot factor was heat [propagation mats set at 80 °F (heat) or no propagation mat (no heat)] and the subplot factor was light exclusion (0, 4, or 6 days of dark). The highest survival rate among treatments was 97% in 0 days of dark with no heat treatment; survival decreased to 84% in 4 and 6 days of dark with no heat treatments. The plant survival rate was 96% with 0 days of dark and heat treatment; however, the survival rates were 63% and 45% for the 4- and 6-day dark treatments, respectively. The scion stem diameter was largest for transplants grown in 0 days of dark, but there was no difference in stem diameter due to heat treatments. There were no differences among scion or rootstock biomasses due to heat or light treatments. These results demonstrate that propagation mats set at 80 °F to regulate the substrate temperature were detrimental to grafted transplant survival under extended periods of light exclusion. However, this finding creates the basis to explore lower levels of substrate temperature modification. Our work also indicates that light exclusion may not be necessary for healing grafted tomato plants regardless of root-zone temperature treatments. Future work should examine the interactions of various substrate and air temperatures under full light conditions and their effects on grafted tomato transplant survival and growth. This work contributes to the ongoing research of how to optimize low-input healing methods that may be readily adopted by small-scale tomato growers.

Ultrasonik Sprey Piroliz Yöntemi ile Üretilen Güneş Soğurucu CH3NH3PbI3-xClx Perovskit Yapısının Optik, Morfolojik ve Yapısal Özelliklerinin İncelenmesi

Bu çalışmada ultrasonik sprey piroliz yöntemi ile cam alttaşlar üzerine CH3NH3PbI3-xClx perovskit ince filmler kaplanmıştır. Alttaş sıcaklığının perovskit filmlerin yapısal, morfolojik ve optik özellikleri üzerine etkisi, X-ışını kırınım (XRD) cihazı, taramalı elektron mikroskobu (SEM), atomik kuvvet mikroskobu (AFM) ve Uv-Vis spektrofotometresi kullanılarak araştırılmıştır. XRD spektrumları incelendiğinde, tüm filmlerin tetragonal perovskit örgü yapısında olduğu ancak 75 °C ve 100 °C alttaş sıcaklığı uygulanan ince filmlerde farklı kristal yapılara ait fazladan piklerinde olduğu görülmüştür. Filmlere sonradan herhangi bir tavlama işlemi uygulanmadığı halde, 125 °C alttaş sıcaklığında kaplanan filmlerin literatür ile birebir uyumlu saf perovskit kristali formunda olduğu tespit edilmiştir. XRD spektrum verileri ve Debye-Scherrer formülü kullanılarak ince filmlerin kristal boyutları belirlenmiştir. En yüksek kristal boyutu 743 Å ile 125 °C alttaş sıcaklığında kaplanan filmlerde elde edilmiştir. SEM görüntüleri incelendiğinde film yüzeylerinin sadece 125 °C alttaş sıcaklığında homojen kaplandığı ve kristal tanecikler arasında boşlukların oluşmadığı saptanmıştır. Filmlerin yüzey pürüzlülüğü atomik kuvvet mikroskobu ile incelenmiş, en düşük yüzey pürüzlülüğü 41.32 nm ile 125 °C alttaş sıcaklığına sahip olan ince filmde elde edilmiştir. Optik soğurma ölçümleri, oda sıcaklığında çalıştırılan Uv-Vis spektrofotometre kullanılarak gerçekleştirilmiştir. Filmler kaplanırken uygulanan alttaş sıcaklığı artıkça filme ait yasak bant aralığının 1.20’ eV tan teorik analizler ile de uyuşan 1.56 eV’ a çıktığı görülmüştür.

Phase controllable synthesis of SnSe and SnSe2 films with tunable photoresponse properties

Nanomaterials have lots of crystal phases that are distinct from their bulk structures, and show striking structure-dependent properties, which deserve further investigation and in-depth understanding. Here, we report on the growth of highly crystalline SnSe and SnSe2 films by heating the single precursor SnSe powder via vapor deposition. The synergistic effect of heating temperature and substrate temperature in the crystal growth process determines the phase construction of samples. Proper heating temperature (650~700 °C) combined with a slow substrate temperature (~210 °C) is beneficial for SnSe2 to grow, while high substrate temperature (~380 °C) is helpful to grow SnSe. The phase diagram depending on the heating temperature and substrate temperature of samples growth has been revealed, which provides guidance for future synthesizing of the materials with a controlled stage construction. The as-grown SnSe and SnSe2 films exhibit tunable photoresponse properties, which boost the practical application of the films in photodectors.

Influence of substrate temperature on the energy storage properties of bismuth magnesian niobium thin films prepared by magnetron sputtering

Bismuth magnesian niobium (Bi2Mg2/3Nb4/3O7, BMNO) thin films are deposited on Pt/Ti/SiO2/Si substrates at different substrate temperatures by magnetron sputtering. The effect of substrate temperature on the energy storage properties of BMNO thin films is investigated systematically. The X-ray diffraction pattern reveals the thin films are polycrystalline with cubic pyrochlore structure. The dielectric constant of BMNO thin films increases with the substrate temperature, reaches the maximum value of 161 at 700 °C and starts decreasing thereafter. The maximum electrical breakdown strength and recoverable stored energy density are respectively obtained as 3.78 MV/cm and 58.9 J/cm3 when the BMNO thin films are deposited at 700 °C. In addition, the BMNO thin films possess excellent thermal stability of stored energy properties in a wide range of temperatures (-150 °C–200 °C). These results suggest that the BMNO thin films are a promising candidate for lead-free energy storage application in equipment operation under adverse environments.