Effect Of Ion Induced Damage Research Articles

Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

The effect of ion-induced damage on GaNAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy employing a DC plasma as the N source was investigated. Ion-induced damage results in: (i) an observed disappearance of pendellösung fringes in the X-ray diffraction pattern of the sample; (ii) a drastic decrease in intensity and a broadening in the full-width at half-maximum of photoluminescence spectra. It was shown that ion-induced damage strongly affected the bandedge potential fluctuations of the QWs. The bandedge potential fluctuations for the samples grown with and without ion removal magnets (IRMs) are 44 and 63 meV, respectively. It was found that the N–As atomic interdiffusion at the interfaces of the QWs was enhanced by the ion damage-induced defects. The estimated activation energies of the N–As atomic interdiffusion for the samples grown with and without IRMs are 3.34 and 1.78 eV, respectively.

Microcircuit imaging using an ion-beam-induced charge

Ionizing radiation such as photons, keV electrons, or MeV ions can generate electron-hole pairs in semiconducting material. The high penetrating power of MeV light ions allows them to generate electron-hole pairs from deep within intact microelectronic devices, so images can be formed of the device active areas with very little degradation of the spatial resolution of the focused MeV ion beam. Furthermore, the ion-beam-induced charge (IBIC) image contrast is not strongly affected by the energy loss through the overlying device layers. This article is the first to demonstrate the capability of a nuclear microprobe to generate IBIC images of the active regions of devices through the passivation and metallization layers. The effect of the carrier generation volume on IBIC resolution is assessed. The ability of IBIC to align the major crystal axes of semiconductor samples is shown, and the effect of ion-induced damage on IBIC image contrast is considered.

Enhanced Oxidation of TiSi2 Films by As+ Implantation

ABSTRACTThe influence of As+-ion implantation on the oxidation of TiSi2 films is investigated. It will be shown that implantation leads to a greatly increased rate of oxidation in a dry O2 ambient. Low-temperature oxidation of the implanted films not only results in substantial oxidation of the films, but completely alters the films' morphology. Different implantation techniques were used to isolate the effects of ion-induced damage from chemical effects, so that each could be separately studied. It will be shown that neither chemical nor damage effects are able, by themselves, to account for the enhanced oxidation. Rather, a model is proposed to explain the role of implantation in the oxidation process which depends on a synergistic relation between these two effects.